Abstract: Semiconductor device structures having low-k features and methods of forming low-k features are described herein. Some examples relate to a surface modification layer, which may protect a low-k feature during subsequent processing. Some examples relate to gate spacers that include a low-k feature. Some examples relate to a low-k contact etch stop layer. Example methods are described for forming such features.

Abstract: An integrated circuit structure includes a bulk semiconductor region, a first semiconductor strip over and connected to the bulk semiconductor region, and a dielectric layer including silicon oxide therein. Carbon atoms are doped in the silicon oxide. The dielectric layer includes a horizontal portion over and contacting a top surface of the bulk semiconductor region, and a vertical portion connected to an end of the horizontal portion. The vertical portion contacts a sidewall of a lower portion of the first semiconductor strip. A top portion of the first semiconductor strip protrudes higher than a top surface of the vertical portion to form a semiconductor fin. The horizontal portion and the vertical portion have a same thickness. A gate stack extends on a sidewall and a top surface of the semiconductor fin.

Abstract: Methods and apparatus for on-package accelerator complex (AC) for integrating accelerator and IOs for scalable RAN and edge cloud solutions. The AC comprises one or more dies including an IO interface tile that is coupled to multiple intellectual property (IP) blocks that may be integrated on the same die as the IO interface tile or separate dies that are coupled to the IO interface tile via die-to-die or chiplet-to-chiplet interconnects. The IP blocks may include a network interface (e.g., Ethernet) and one or more accelerators. The package further includes a central processing unit (CPU) that is coupled to the AC via a die-to-die or chiplet-to-chiplet interconnect. The IO interface tile includes integrated shared scratchpad memory that is shared among the IP blocks and the CPU cores. The IO interface tile further includes an interface controller for scheduling IP blocks and configuring data transfers between the IP blocks, such as used by a RAN pipeline.

Abstract: An interconnect structure includes an interconnect structure includes an etching stop layer; a dielectric layer and an insert layer on the etching stop layer, and a conductive feature in the dielectric layer, the insert layer and the etching stop layer. A material of the insert layer is different from the dielectric layer and the etching stop layer.

Abstract: A method includes forming a silicon layer on a wafer, forming an oxide layer in contact with the silicon layer, and, after the oxide layer is formed, annealing the wafer in an environment comprising ammonia (NH3) to form a dielectric barrier layer between, and in contact with, the silicon layer and the oxide layer. The dielectric barrier layer comprises silicon and nitrogen.

Abstract: Semiconductor device structures having dielectric features and methods of forming dielectric features are described herein. In some examples, the dielectric features are formed by an ALD process followed by a varying temperature anneal process. The dielectric features can have high density, low carbon concentration, and lower k-value. The dielectric features formed according to the present disclosure has improved resistance against etching chemistry, plasma damage, and physical bombardment in subsequent processes while maintaining a lower k-value for target capacitance efficiency.

Abstract: Semiconductor device structures comprising a spacer feature having multiple spacer layers are provided. In one example, a semiconductor device includes an active area on a substrate, the active area comprising a source/drain region, a gate structure over the active area, the source/drain region being proximate the gate structure, a spacer feature having a first portion along a sidewall of the gate structure and having a second portion along the source/drain region, wherein the first portion of the spacer feature comprises a bulk spacer layer along the sidewall of the gate structure, wherein the second portion of the spacer feature comprises the bulk spacer layer and a treated seal spacer layer, the treated seal spacer layer being disposed along the source/drain region and between the bulk spacer layer and the source/drain region, and a contact etching stop layer on the spacer feature.

Abstract: A device, structure, and method are provided whereby an insert layer is utilized to provide additional support for surrounding dielectric layers. The insert layer may be applied between two dielectric layers. Once formed, trenches and vias are formed within the composite layers, and the insert layer will help to provide support that will limit or eliminate undesired bending or other structural motions that could hamper subsequent process steps, such as filling the trenches and vias with conductive material.

Abstract: A method includes forming a dummy gate stack over a semiconductor region of a wafer, and depositing a gate spacer layer using Atomic Layer Deposition (ALD) on a sidewall of the dummy gate stack. The depositing the gate spacer layer includes performing an ALD cycle to form a dielectric atomic layer. The ALD cycle includes introducing silylated methyl to the wafer, purging the silylated methyl, introducing ammonia to the wafer, and purging the ammonia.

Abstract: An unsaturated polyester resin composition with low styrene volatility and a molding article thereof are provided. The unsaturated polyester resin composition of includes: 30 to 60 parts by weight of unsaturated polyester resin and 2 to 30 parts by weight of comonomer, and the comonomer includes: (a) methyl styrene, (b) hydroxy acrylate monomer and (c) diallyl phthalate monomer, and the weight ratio of the content (a), (b), and (c) is 6:3:1 in the comonomer.

Abstract: A method includes etching a semiconductor substrate to form a trench, and depositing a dielectric layer using an Atomic Layer Deposition (ALD) cycle. The dielectric layer extends into the trench. The ALD cycle includes pulsing Hexachlorodisilane (HCD) to the semiconductor substrate, purging the HCD, pulsing triethylamine to the semiconductor substrate, and purging the triethylamine. An anneal process is then performed on the dielectric layer.

Abstract: Systems, methods, and computer-readable media are provided for foreground image segmentation. In some examples, a method can include obtaining a first image of a target and a second image of the target, the first image having a first field-of-view (FOV) and the second image having a second FOV; determining, based on the first image, a first segmentation map that identifies a first estimated foreground region in the first image; determining, based on the second image, a second segmentation map that identifies a second estimated foreground region in the second image; generating a third segmentation map based on the first segmentation map and the second segmentation map; and generating, using the second segmentation map and the third segmentation map, a refined segmentation mask that identifies the target as a foreground region of the first and/or second image.

Abstract: Semiconductor device structures having low-k features and methods of forming low-k features are described herein. Some examples relate to a surface modification layer, which may protect a low-k feature during subsequent processing. Some examples relate to gate spacers that include a low-k feature. Some examples relate to a low-k contact etch stop layer. Example methods are described for forming such features.

Abstract: A method includes forming a dummy gate stack over a semiconductor region of a wafer, and depositing a gate spacer layer using Atomic Layer Deposition (ALD) on a sidewall of the dummy gate stack. The depositing the gate spacer layer includes performing an ALD cycle to form a dielectric atomic layer. The ALD cycle includes introducing silylated methyl to the wafer, purging the silylated methyl, introducing ammonia to the wafer, and purging the ammonia.

Abstract: A method for manufacturing a semiconductor device includes forming a first insulating film over a semiconductor substrate and forming a second insulating film on the first insulating film. The first insulating film is a tensile film having a first tensile stress and the second insulating film is either a tensile film having a second tensile stress that is less than the first tensile stress or a compressive film. The first insulating film and second insulating film are formed of a same material. A metal hard mask layer is formed on the second insulating film.

Abstract: Systems, methods, and computer-readable media are provided for foreground image segmentation. In some examples, a method can include obtaining a first image of a target and a second image of the target, the first image having a first field-of-view (FOV) and the second image having a second FOV; determining, based on the first image, a first segmentation map that identifies a first estimated foreground region in the first image; determining, based on the second image, a second segmentation map that identifies a second estimated foreground region in the second image; generating a third segmentation map based on the first segmentation map and the second segmentation map; and generating, using the second segmentation map and the third segmentation map, a refined segmentation mask that identifies the target as a foreground region of the first and/or second image.

Abstract: The present disclosure provides a semiconductor device and a method of forming the same. A semiconductor according one embodiment of the present disclosure include a plurality of channel members disposed over a substrate, a plurality of inner spacer features interleaving the plurality of channel members, a gate structure wrapping around each of the plurality of channel members, and a source/drain feature. The source/drain feature includes a first epitaxial layer in contact with the substrate and the plurality of channel members, and a second epitaxial layer in contact with the first epitaxial layer and the plurality of inner spacer features. The first epitaxial layer and the second epitaxial layer include silicon germanium. A germanium content of the second epitaxial layer is greater than a germanium content of the first epitaxial layer.

Abstract: Semiconductor device structures having dielectric features and methods of forming dielectric features are described herein. In some examples, the dielectric features are formed by an ALD process followed by a varying temperature anneal process. The dielectric features can have high density, low carbon concentration, and lower k-value. The dielectric features formed according to the present disclosure has improved resistance against etching chemistry, plasma damage, and physical bombardment in subsequent processes while maintaining a lower k-value for target capacitance efficiency.

Abstract: A water-based surface treatment agent is provided. The water-based surface treatment agent is suitable to be coated onto a surface of a synthetic leather. The water-based surface treatment agent at least includes waterborne polyurethane, silicone powder, and water. Based on 100 parts by weight of the water-based surface treatment agent, a content of the waterborne polyurethane is within 15 to 35 parts by weight, and a content of the silicone powder is within 3 to 20 parts by weight. A non-volatile matter content of the waterborne polyurethane is within a range from 20 wt % to 30 wt %. Each grain of the silicone powder has a particle size within a range from 0.2 ?m to 15 ?m, a specific gravity within a range from 0.9 to 1.5, a water content within a range from 0.1% to 0.5%, and a hardness (A) within a range from 30 to 90.

Abstract: A method includes etching a semiconductor substrate to form a trench, and depositing a dielectric layer using an Atomic Layer Deposition (ALD) cycle. The dielectric layer extends into the trench. The ALD cycle includes pulsing Hexachlorodisilane (HCD) to the semiconductor substrate, purging the HCD, pulsing triethylamine to the semiconductor substrate, and purging the triethylamine. An anneal process is then performed on the dielectric layer.