Abstract: A microelectronic assembly may include a substrate having an opening extending between first and second oppositely facing surfaces of the substrate, the opening elongated in a first direction; and at least one microelectronic element having a front face facing and attached to the first surface of the substrate and a plurality of contacts at the front face overlying the opening, the microelectronic element having first and second opposite peripheral edges extending away from the front face. The first peripheral edge extends beyond, or is aligned in the first direction with, an inner edge of the opening, and the opening extends beyond the second peripheral edge.

Abstract: A semiconductor device includes a substrate, a logic gate structure, a photosensitive gate structure, a hard mask layer, a first spacer, a first source, a first drain, a second spacer, a second source and a second drain. The logic gate structure and the photosensitive gate structure are disposed on a surface of the substrate. The hard mask layer covers the logic gate structure, the photosensitive gate structure and the surface of the substrate. The first spacer overlies the hard mask layer conformal to a sidewall of the logic gate structure. The first source and drain are respectively disposed in the substrate at two opposite sides of the logic gate structure. The second spacer overlies the hard mask layer conformal to a sidewall of the photosensitive gate structure. The second source and drain are respectively disposed in the substrate at two opposite sides of the photosensitive gate structure.

Abstract: Embodiments of mechanisms of a backside illuminated image sensor device structure are provided. The method for manufacturing a backside illuminated image sensor device structure includes providing a substrate and forming a polysilicon layer over the substrate. The method further includes forming a buffer layer over the polysilicon layer and forming an etch stop layer over the buffer layer. The method further includes forming a hard mask layer over the etch stop layer and patterning the hard mask layer to form an opening in the hard mask layer. The method further includes performing an implant process through the opening of the hard mask layer to form a doped region in the substrate and removing the hard mask layer by a first removing process. The method further includes removing the etch stop layer by a second removing process and removing the buffer layer by a third removing process.

Abstract: Various embodiments of mechanisms for forming a slotted metal pad over a TSV in substrate are provided. The dielectric structures in the slotted metal pad reduce dishing effect during planarization of the slotted metal pad. As a result, the risk of having metal stringers in upper metal level(s) caused by the dishing effect is greatly reduced.

Abstract: Various embodiments of mechanisms for forming a slotted metal pad over a TSV in substrate are provided. The dielectric structures in the slotted metal pad reduce dishing effect during planarization of the slotted metal pad. As a result, the risk of having metal stringers in upper metal level(s) caused by the dishing effect is greatly reduced.

Abstract: A microelectronic assembly may include a substrate having an opening extending between first and second oppositely facing surfaces of the substrate, the opening elongated in a first direction; and at least one microelectronic element having a front face facing and attached to the first surface of the substrate and a plurality of contacts at the front face overlying the opening, the microelectronic element having first and second opposite peripheral edges extending away from the front face. The first peripheral edge extends beyond, or is aligned in the first direction with, an inner edge of the opening, and the opening extends beyond the second peripheral edge.

Abstract: Embodiments of mechanisms of a backside illuminated image sensor device structure are provided. The method for manufacturing a backside illuminated image sensor device structure includes providing a substrate and forming a polysilicon layer over the substrate. The method further includes forming a buffer layer over the polysilicon layer and forming an etch stop layer over the buffer layer. The method further includes forming a hard mask layer over the etch stop layer and patterning the hard mask layer to form an opening in the hard mask layer. The method further includes performing an implant process through the opening of the hard mask layer to form a doped region in the substrate and removing the hard mask layer by a first removing process. The method further includes removing the etch stop layer by a second removing process and removing the buffer layer by a third removing process.

Abstract: A microelectronic assembly may include a substrate having an opening extending between first and second oppositely facing surfaces of the substrate, the opening elongated in a first direction; and at least one microelectronic element having a front face facing and attached to the first surface of the substrate and a plurality of contacts at the front face overlying the opening, the microelectronic element having first and second opposite peripheral edges extending away from the front face. The first peripheral edge extends beyond, or is aligned in the first direction with, an inner edge of the opening, and the opening extends beyond the second peripheral edge.

Abstract: A microelectronic assembly may include a substrate having an opening extending between first and second oppositely facing surfaces of the substrate, the opening elongated in a first direction; and at least one microelectronic element having a front face facing and attached to the first surface of the substrate and a plurality of contacts at the front face overlying the opening, the microelectronic element having first and second opposite peripheral edges extending away from the front face. The first peripheral edge extends beyond, or is aligned in the first direction with, an inner edge of the opening, and the opening extends beyond the second peripheral edge.

Abstract: Various embodiments of mechanisms for forming a slotted metal pad over a TSV in substrate are provided. The dielectric structures in the slotted metal pad reduce dishing effect during planarization of the slotted metal pad. As a result, the risk of having metal stringers in upper metal level(s) caused by the dishing effect is greatly reduced.

Abstract: One or more techniques or systems for mitigating peeling associated with a pad, such as a pad of a semiconductor, are provided herein. In some embodiments, a pad structure for mitigating peeling comprises a bond region located above a first region. In some embodiments, a first inter-layer dielectric region associated with the first region is formed in an inter-layer region under the pad. Additionally, a first inter-metal dielectric region associated with the first region is formed in an inter-metal region under the inter-layer region. In some embodiments, the first inter-metal region is formed under the first inter-layer region. In this manner, peeling associated with the pad structure is mitigated, at least because the first inter-metal dielectric region comprises dielectric material and the first inter-layer dielectric region comprises dielectric material, thus forming a dielectric-dielectric interface between the first inter-metal dielectric region and the inter-layer dielectric region.

Abstract: An apparatus for cleaning an emitter electrode in electrohydrodynamic fluid accelerator and precipitator devices via movement of a cleaning device including granular abrasives positioned to frictionally engage the emitter electrode. The cleaning device causes the granular abrasives to travel along a longitudinal extent of the emitter electrode to remove detrimental material accumulated on the electrode. The granular abrasives can be retained in housing, on opposed cleaning surfaces, and can be compressed by the housing or an applied force to abrade detrimental material from the electrode surface.

Abstract: A stacked microelectronic assembly is disclosed, as are different embodiments related to the same. The stacked microelectronic assembly includes a plurality of stackable microelectronic units each having a semiconductor element mounted on a substrate, and also includes alignment elements which align and stack the units one atop another. The aligned assembly may be heated to melt or to reflow the conductive bonding material between the units, thereby electrically coupling and bonding corresponding conductive terminals on each unit.

Abstract: A substrate including plural microelectronic device carriers has metallic alignment elements. The alignment elements desirably are disposed in a predetermined positional relationship to terminals on the carriers. The alignment elements are engaged with a carrier frame and a cutting device is aligned with the carrier frame. The cutting device cuts the carriers so that borders of the carriers are in a precise relationship with the terminals.

Abstract: A stacked microelectronic assembly is disclosed, as are different embodiments related to the same. The stacked microelectronic assembly includes a plurality of stackable microelectronic units each having a semiconductor element mounted on a substrate, and also includes alignment elements which align and stack the units one atop another. The aligned assembly may be heated to melt or to reflow the conductive bonding material between the units, thereby electrically coupling and bonding corresponding conductive terminals on each unit.

Abstract: Various embodiments of packaged chips and ways of fabricating them are disclosed herein. One such packaged chip disclosed herein includes a chip having a front face, a rear face opposite the front face, and a device at one of the front and rear faces, the device being operable as a transducer of at least one of acoustic energy and electromagnetic energy, and the chip including a plurality of bond pads exposed at one of the front and rear faces. The packaged chip includes a package element having a dielectric element and a metal layer disposed on the dielectric element, the package element having an inner surface facing the chip and an outer surface facing away from the chip. The metal layer includes a plurality of contacts exposed at at least one of the inner and outer surfaces, the contacts conductively connected to the bond pads.

Abstract: Various embodiments of packaged chips and ways of fabricating them are disclosed herein. One such packaged chip disclosed herein includes a chip having a front face, a rear face opposite the front face, and a device at one of the front and rear faces, the device being operable as a transducer of at least one of acoustic energy and electromagnetic energy, and the chip including a plurality of bond pads exposed at one of the front and rear faces. The packaged chip includes a package element having a dielectric element and a metal layer disposed on the dielectric element, the package element having an inner surface facing the chip and an outer surface facing away from the chip. The metal layer includes a plurality of contacts exposed at at least one of the inner and outer surfaces, the contacts conductively connected to the bond pads.