Patents by Inventor Chung-En Kao
Chung-En Kao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220379356Abstract: A cleaning device for removing contamination on a substrate holder used with an electroplating cell includes an arm, a cleaning agent supplier, a nozzle and a receiver. The cleaning agent supplier is coupled to the arm and configured to supply a cleaning agent. The nozzle is coupled to the cleaning agent supplier and configured to spray the cleaning agent onto the substrate holder to remove the contamination. The receiver is coupled to the arm and configured to receive the cleaning agent after the cleaning agent is sprayed onto the substrate holder.Type: ApplicationFiled: August 10, 2022Publication date: December 1, 2022Inventors: Yu-Young WANG, Chung-En KAO, Victor Y. LU
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Patent number: 11433440Abstract: A cleaning device for removing contamination on a substrate holder used with an electroplating cell includes an arm, a cleaning agent supplier, a nozzle and a receiver. The cleaning agent supplier is coupled to the arm and configured to supply a cleaning agent. The nozzle is coupled to the cleaning agent supplier and configured to spray the cleaning agent onto the substrate holder to remove the contamination. The receiver is coupled to the arm and configured to receive the cleaning agent after the cleaning agent is sprayed onto the substrate holder.Type: GrantFiled: June 3, 2019Date of Patent: September 6, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yu-Young Wang, Chung-En Kao, Victor Y. Lu
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Patent number: 11230791Abstract: Among other things, one or more systems and techniques for promoting metal plating profile uniformity are provided. A magnetic structure is positioned relative to a semiconductor wafer that is to be electroplated with metal during a metal plating process. In an embodiment, the magnetic structure applies a force that decreases an edge plating current by moving metal ions away from a wafer edge of the semiconductor wafer. In an embodiment, the magnetic structure applies a force that increases a center plating current by moving metal ions towards a center portion of the semiconductor wafer. In this way, the edge plating current has a current value that is similar to a current value of the center plating current. The similarity between the center plating current and the edge plating current promotes metal plating uniformity.Type: GrantFiled: December 31, 2019Date of Patent: January 25, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITEDInventors: Ming-Chin Tsai, Chung-En Kao, Victor Y. Lu
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Patent number: 11111910Abstract: Cryogenic pump apparatuses include nanostructure material to achieve an ultra-high vacuum level. The nanostructure material can be mixed with either an adsorbent material or a fixed glue layer which is utilized to fix the adsorbent material. The nanostructure material's good thermal conductivity and adsorption properties help to lower working temperature and extend regeneration cycle of the cryogenic pumps.Type: GrantFiled: December 3, 2018Date of Patent: September 7, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Surendra Babu Anantharaman, Wen-Cheng Yang, Chung-En Kao, Victor Y. Lu, Wei Chin
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Publication number: 20200131662Abstract: Among other things, one or more systems and techniques for promoting metal plating profile uniformity are provided. A magnetic structure is positioned relative to a semiconductor wafer that is to be electroplated with metal during a metal plating process. In an embodiment, the magnetic structure applies a force that decreases an edge plating current by moving metal ions away from a wafer edge of the semiconductor wafer. In an embodiment, the magnetic structure applies a force that increases a center plating current by moving metal ions towards a center portion of the semiconductor wafer. In this way, the edge plating current has a current value that is similar to a current value of the center plating current. The similarity between the center plating current and the edge plating current promotes metal plating uniformity.Type: ApplicationFiled: December 31, 2019Publication date: April 30, 2020Inventors: Ming-Chin TSAI, Chung-En KAO, Victor Y. LU
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Patent number: 10526719Abstract: Among other things, one or more systems and techniques for promoting metal plating profile uniformity are provided. A magnetic structure is positioned relative to a semiconductor wafer that is to be electroplated with metal during a metal plating process. In an embodiment, the magnetic structure applies a force that decreases an edge plating current by moving metal ions away from a wafer edge of the semiconductor wafer. In an embodiment, the magnetic structure applies a force that increases a center plating current by moving metal ions towards a center portion of the semiconductor wafer. In this way, the edge plating current has a current value that is similar to a current value of the center plating current. The similarity between the center plating current and the edge plating current promotes metal plating uniformity.Type: GrantFiled: August 21, 2013Date of Patent: January 7, 2020Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Ming-Chin Tsai, Chung-En Kao, Victor Y. Lu
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Publication number: 20190283087Abstract: A cleaning device for removing contamination on a substrate holder used with an electroplating cell includes an arm, a cleaning agent supplier, a nozzle and a receiver. The cleaning agent supplier is coupled to the arm and configured to supply a cleaning agent. The nozzle is coupled to the cleaning agent supplier and configured to spray the cleaning agent onto the substrate holder to remove the contamination. The receiver is coupled to the arm and configured to receive the cleaning agent after the cleaning agent is sprayed onto the substrate holder.Type: ApplicationFiled: June 3, 2019Publication date: September 19, 2019Inventors: Yu-Young WANG, Chung-En KAO, Victor Y. LU
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Patent number: 10307798Abstract: A cleaning device for removing contamination on a substrate holder used with an electroplating cell includes an arm, a cleaning agent supplier, a nozzle and a receiver. The cleaning agent supplier is coupled to the arm and configured to supply a cleaning agent. The nozzle is coupled to the cleaning agent supplier and configured to spray the cleaning agent onto the substrate holder to remove the contamination. The receiver is coupled to the arm and configured to receive the cleaning agent after the cleaning agent is sprayed onto the substrate holder.Type: GrantFiled: August 28, 2015Date of Patent: June 4, 2019Assignee: TAIWAN SEMICONDUCTER MANUFACTURING COMPANY LIMITEDInventors: Yu-Young Wang, Chung-En Kao, Victor Y. Lu
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Publication number: 20190101110Abstract: Cryogenic pump apparatuses include nanostructure material to achieve an ultra-high vacuum level. The nanostructure material can be mixed with either an adsorbent material or a fixed glue layer which is utilized to fix the adsorbent material. The nanostructure material's good thermal conductivity and adsorption properties help to lower working temperature and extend regeneration cycle of the cryogenic pumps.Type: ApplicationFiled: December 3, 2018Publication date: April 4, 2019Inventors: Surendra Babu Anantharaman, Wen-Cheng Yang, Chung-En Kao, Victor Y. Lu, Wei Chin
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Patent number: 10190209Abstract: A thin film deposition system and method provide for multiple target assemblies that may be separately powered. Each target assembly includes a target and associated magnet or set of magnets. The disclosure provides a tunable film profile produced by multiple power sources that separately power the target arrangements. The relative amounts of power supplied to the target arrangements may be customized to provide a desired film and may be varied in time to produce a film with varied characteristics.Type: GrantFiled: July 17, 2017Date of Patent: January 29, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chung-En Kao, Ming-Chin Tsai, You-Hua Chou, Chen-Chia Chiang, Chih-Tsung Lee, Ming-Shiou Kuo
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Patent number: 10145371Abstract: Cryogenic pump apparatuses include nanostructure material to achieve an ultra-high vacuum level. The nanostructure material can be mixed with either an adsorbent material or a fixed glue layer which is utilized to fix the adsorbent material. The nanostructure material's good thermal conductivity and adsorption properties help to lower working temperature and extend regeneration cycle of the cryogenic pumps.Type: GrantFiled: October 22, 2013Date of Patent: December 4, 2018Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Surendra Babu Anantharaman, Wen-Cheng Yang, Chung-En Kao, Victor Y. Lu, Wei Chin
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Patent number: 10121698Abstract: Semiconductor device metallization systems and methods are disclosed. In some embodiments, a metallization system for semiconductor devices includes a mainframe, and a plurality of modules disposed proximate the mainframe. One of the plurality of modules comprises a physical vapor deposition (PVD) module and one of the plurality of modules comprises an ultraviolet light (UV) cure module.Type: GrantFiled: January 16, 2017Date of Patent: November 6, 2018Assignee: Taiwan Semiconductor Manufacturing CompanyInventors: Hsiang-Huan Lee, Shau-Lin Shue, Kuang-Kuo Koai, Hai-Ching Chen, Tung-Ching Tseng, Wen-Cheng Yang, Chung-En Kao, Ming-Han Lee, Hsin-Yen Huang
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Patent number: 9982340Abstract: An apparatus comprises: a shower head having a supply plenum for supplying the gas to the chamber and a vacuum manifold fluidly coupled to the supply plenum; and at least one vacuum system fluidly coupled to the vacuum manifold of the shower head.Type: GrantFiled: April 4, 2012Date of Patent: May 29, 2018Assignee: Taiwan Semiconductor Manufacturing Co. Ltd.Inventors: Chih-Tsung Lee, Hung Jui Chang, You-Hua Chou, Shiu-Ko Jangjian, Chung-En Kao, Ming-Chin Tsai, Huan-Wen Lai
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Patent number: 9865478Abstract: The present disclosure is directed to a physical vapor deposition system configured to heat a semiconductor substrate or wafer. In some embodiments the disclosed physical vapor deposition system comprises at least one heat source having one or more lamp modules for heating of the substrate. The lamp modules may be separated from the substrate by a shielding device. In some embodiments, the shielding device comprises a one-piece device or a two piece device. The disclosed physical vapor deposition system can heat the semiconductor substrate, reflowing a metal film deposited thereon without the necessity for separate chambers, thereby decreasing process time, requiring less thermal budget, and decreasing substrate damage.Type: GrantFiled: January 5, 2015Date of Patent: January 9, 2018Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ming-Chin Tsai, Bo-Hung Lin, You-Hua Chou, Chung-En Kao
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Publication number: 20170314121Abstract: A thin film deposition system and method provide for multiple target assemblies that may be separately powered. Each target assembly includes a target and associated magnet or set of magnets. The disclosure provides a tunable film profile produced by multiple power sources that separately power the target arrangements. The relative amounts of power supplied to the target arrangements may be customized to provide a desired film and may be varied in time to produce a film with varied characteristics.Type: ApplicationFiled: July 17, 2017Publication date: November 2, 2017Inventors: Chung-En Kao, Ming-Chin Tsai, You-Hua Chou, Chen-Chia Chiang, Chih-Tsung Lee, Ming-Shiou Kuo
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Patent number: 9708706Abstract: A thin film deposition system and method provide for multiple target assemblies that may be separately powered. Each target assembly includes a target and associated magnet or set of magnets. The disclosure provides a tunable film profile produced by multiple power sources that separately power the target arrangements. The relative amounts of power supplied to the target arrangements may be customized to provide a desired film and may be varied in time to produce a film with varied characteristics.Type: GrantFiled: November 30, 2011Date of Patent: July 18, 2017Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chung-En Kao, Ming-Chin Tsai, You-Hua Chou, Chen-Chia Chiang, Chih-Tsung Lee, Ming-Shiou Kuo
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Publication number: 20170125290Abstract: Semiconductor device metallization systems and methods are disclosed. In some embodiments, a metallization system for semiconductor devices includes a mainframe, and a plurality of modules disposed proximate the mainframe. One of the plurality of modules comprises a physical vapor deposition (PVD) module and one of the plurality of modules comprises an ultraviolet light (UV) cure module.Type: ApplicationFiled: January 16, 2017Publication date: May 4, 2017Inventors: Hsiang-Huan Lee, Shau-Lin Shue, Kuang-Kuo Koai, Hai-Ching Chen, Tung-Ching Tseng, Wen-Cheng Yang, Chung-En Kao, Ming-Han Lee, Hsin-Yen Huang
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Publication number: 20170056934Abstract: A cleaning device for removing contamination on a substrate holder used with an electroplating cell includes an arm, a cleaning agent supplier, a nozzle and a receiver. The cleaning agent supplier is coupled to the arm and configured to supply a cleaning agent. The nozzle is coupled to the cleaning agent supplier and configured to spray the cleaning agent onto the substrate holder to remove the contamination. The receiver is coupled to the arm and configured to receive the cleaning agent after the cleaning agent is sprayed onto the substrate holder.Type: ApplicationFiled: August 28, 2015Publication date: March 2, 2017Inventors: Yu-Young WANG, Chung-En KAO, Victor Y. LU
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Patent number: 9574265Abstract: In some embodiments, the present disclosure relates to a plasma processing system having a magnetron that provides a symmetric magnetic track through a combination of vibrational and rotational motion. The disclosed magnetron has a magnetic element that generates a magnetic field. The magnetic element is attached to an elastic element connected between the magnetic element and a rotational shaft that rotates the magnetic element about a center of the sputtering target. The elastic element may vary its length during rotation of the magnetic element to change the radial distance between the rotational shaft and the magnetic element. The resulting magnetic track enables concurrent motion of the magnetic element in both an angular direction and a radial direction. Such motion enables a symmetric magnetic track that provides good wafer uniformity and a short deposition time.Type: GrantFiled: July 6, 2015Date of Patent: February 21, 2017Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Bo-Hung Lin, Ming-Chih Tsai, You-Hua Chou, Chung-En Kao
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Patent number: 9548241Abstract: Semiconductor device metallization systems and methods are disclosed. In some embodiments, a metallization system for semiconductor devices includes a mainframe, and a plurality of modules disposed proximate the mainframe. One of the plurality of modules comprises a physical vapor deposition (PVD) module and one of the plurality of modules comprises an ultraviolet light (UV) cure module.Type: GrantFiled: February 29, 2016Date of Patent: January 17, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsiang-Huan Lee, Shau-Lin Shue, Keith Kuang-Kuo Koai, Hai-Ching Chen, Tung-Ching Tseng, Wen-Cheng Yang, Chung-En Kao, Ming-Han Lee, Hsin-Yen Huang