Abstract: Semiconductor device metallization systems and methods are disclosed. In some embodiments, a metallization system for semiconductor devices includes a mainframe, and a plurality of modules disposed proximate the mainframe. One of the plurality of modules comprises a physical vapor deposition (PVD) module and one of the plurality of modules comprises an ultraviolet light (UV) cure module.

Abstract: Semiconductor device metallization systems and methods are disclosed. In some embodiments, a metallization system for semiconductor devices includes a mainframe, and a plurality of modules disposed proximate the mainframe. One of the plurality of modules comprises a physical vapor deposition (PVD) module and one of the plurality of modules comprises an ultraviolet light (UV) cure module.

Abstract: In some embodiments, the present disclosure relates to a plasma processing system configured to form a symmetric plasma distribution around a workpiece. In some embodiments, the plasma processing system comprises a plurality of coils symmetrically positioned around a processing chamber. When a current is provided to the coils, separate magnetic fields, which operate to ionize the target atoms, emanate from the separate coils. The separate magnetic fields operate upon ions within the coils to form a plasma on the interior of the coils. Furthermore, the separate magnetic fields are superimposed upon one another between coils to form a plasma on the exterior of the coils. Therefore, the disclosed plasma processing system can form a plasma that continuously extends along a perimeter of the workpiece with a high degree of uniformity (i.e., without dead spaces).

Abstract: One or more techniques or systems for ultra-high vacuum (UHV) wafer processing are provided herein. In some embodiments, a vacuum system includes one or more cluster tools connected via one or more bridges. For example, a first cluster tool is connected to a first bridge. Additionally, a second cluster tool is connected to a second bridge. In some embodiments, the first bridge is configured to connect the second cluster tool to the first cluster tool. In some embodiments, the second cluster tool is connected to the first bridge, thus forming a ‘tunnel’. In some embodiments, the second bridge comprises one or more facets configured to enable a connection to an additional process chamber or an additional cluster tool. In this manner, a more efficient UHV environment is provided, thus enhancing a yield associated with wafer processing, for example.

Abstract: In some embodiments, the present disclosure relates to a plasma processing system having a magnetron that provides a symmetric magnetic track through a combination of vibrational and rotational motion. The disclosed magnetron has a magnetic element that generates a magnetic field. The magnetic element is attached to an elastic element connected between the magnetic element and a rotational shaft that rotates the magnetic element about a center of the sputtering target. The elastic element may vary its length during rotation of the magnetic element to change the radial distance between the rotational shaft and the magnetic element. The resulting magnetic track enables concurrent motion of the magnetic element in both an angular direction and a radial direction. Such motion enables a symmetric magnetic track that provides good wafer uniformity and a short deposition time.

Abstract: In some embodiments, the present disclosure relates to a plasma processing system comprising a magnetron configured to provide a symmetric magnetic track through a combination of vibrational and rotational motion. The disclosed magnetron comprises a magnetic element configured to generate a magnetic field. The magnetic element is attached to an elastic element connected between the magnetic element and a rotational shaft configured to rotate magnetic element about a center of the sputtering target. The elastic element is configured to vary its length during rotation of the magnetic element to change the radial distance between the rotational shaft and the magnetic element. The resulting magnetic track enables concurrent motion of the magnetic element in both an angular direction and a radial direction. Such motion enables a symmetric magnetic track that provides good wafer uniformity and a short deposition time.

Abstract: Semiconductor device metallization systems and methods are disclosed. In some embodiments, a metallization system for semiconductor devices includes a mainframe, and a plurality of modules disposed proximate the mainframe. One of the plurality of modules comprises a physical vapor deposition (PVD) module and one of the plurality of modules comprises an ultraviolet light (UV) cure module.

Abstract: The present disclosure relates to semiconductor tool monitoring system having multiple sensors configured to concurrently and independently monitor processing conditions of a semiconductor manufacturing tool. In some embodiments, the disclosed tool monitoring system comprises a first sensor system configured to monitor one or more processing conditions of a semiconductor manufacturing tool and to generate a first monitoring response based thereupon. A redundant, second sensor system is configured to concurrently monitor the one or more processing conditions of the manufacturing tool and to generate a second monitoring response based thereupon. A comparison element is configured to compare the first and second monitoring responses, and if the responses deviate from one another (e.g., have a deviation greater than a threshold value) to generate a warning signal. By comparing the first and second monitoring responses, errors in the sensor systems can be detected in real time, thereby preventing yield loss.

Abstract: The present disclosure is directed to a physical vapor deposition system configured to heat a semiconductor substrate or wafer. In some embodiments the disclosed physical vapor deposition system comprises at least one heat source having one or more lamp modules for heating of the substrate. The lamp modules may be separated from the substrate by a shielding device. In some embodiments, the shielding device comprises a one-piece device or a two piece device. The disclosed physical vapor deposition system can heat the semiconductor substrate, reflowing a metal film deposited thereon without the necessity for separate chambers, thereby decreasing process time, requiring less thermal budget, and decreasing substrate damage.

Abstract: Cryogenic pump apparatuses include nanostructure material to achieve an ultra-high vacuum level. The nanostructure material can be mixed with either an adsorbent material or a fixed glue layer which is utilized to fix the adsorbent material. The nanostructure material's good thermal conductivity and adsorption properties help to lower working temperature and extend regeneration cycle of the cryogenic pumps.

Abstract: Among other things, one or more systems and techniques for promoting metal plating profile uniformity are provided. A magnetic structure is positioned relative to a semiconductor wafer that is to be electroplated with metal during a metal plating process. In an embodiment, the magnetic structure applies a force that decreases an edge plating current by moving metal ions away from a wafer edge of the semiconductor wafer. In an embodiment, the magnetic structure applies a force that increases a center plating current by moving metal ions towards a center portion of the semiconductor wafer. In this way, the edge plating current has a current value that is similar to a current value of the center plating current. The similarity between the center plating current and the edge plating current promotes metal plating uniformity.

Abstract: A workpiece transfer system has a plurality of joints having a bearing and a primary and secondary transformer coil, wherein power provided to the primary transformer coil and secondary transformer coil of each joint produces mutual inductance between the primary and secondary transformer coil of the respective joint. A first pair of arms are rotatably coupled to a blade by a first pair of the joints, wherein the primary transformer coil of each of the first pair of joints is operably coupled to the first pair of arms, and the secondary transformer coil of each of the first pair of joints is operably coupled to the blade and an electrode beneath a dielectric workpiece retaining surface of the blade. The electrode is contactlessly energized through the transformer coils of the joint and the blade can chuck and de-chuck a workpiece by reversing current directions and by voltage adjustment.

Abstract: The present disclosure is directed to a physical vapor deposition system configured to heat a semiconductor substrate or wafer. In some embodiments the disclosed physical vapor deposition system comprises at least one heat source having one or more lamp modules for heating of the substrate. The lamp modules may be separated from the substrate by a shielding device. In some embodiments, the shielding device comprises a one-piece device or a two piece device. The disclosed physical vapor deposition system can heat the semiconductor substrate, reflowing a metal film deposited thereon without the necessity for separate chambers, thereby decreasing process time, requiring less thermal budget, and decreasing substrate damage.

Abstract: In some embodiments, the present disclosure relates to a plasma processing system that generates a magnetic field having a maximum strength that is independent of workpiece size. The plasma processing system has a plurality of side electromagnets that have a size which is independent of the workpiece size. The side electromagnets are located around a perimeter of a processing chamber configured to house a semiconductor workpiece. When a current is provided to the side electromagnets, separate magnetic fields emanate from separate positions around the workpiece. The separate magnetic fields contribute to the formation of an overall magnetic field that controls the distribution of plasma within the processing chamber. Because the size of the plurality of separate side magnets is independent of the workpiece size, the plurality of side magnets can generate a magnetic field having a maximum field strength that is independent of workpiece size.

Abstract: One or more techniques or systems for ultra-high vacuum (UHV) wafer processing are provided herein. In some embodiments, a vacuum system includes one or more cluster tools connected via one or more bridges. For example, a first cluster tool is connected to a first bridge. Additionally, a second cluster tool is connected to a second bridge. In some embodiments, the first bridge is configured to connect the second cluster tool to the first cluster tool. In some embodiments, the second cluster tool is connected to the first bridge, thus forming a ‘tunnel’. In some embodiments, the second bridge comprises one or more facets configured to enable a connection to an additional process chamber or an additional cluster tool. In this manner, a more efficient UHV environment is provided, thus enhancing a yield associated with wafer processing, for example.

Abstract: An apparatus comprises: a shower head having a supply plenum for supplying the gas to the chamber and a vacuum manifold fluidly coupled to the supply plenum; and at least one vacuum system fluidly coupled to the vacuum manifold of the shower head.

Abstract: The present disclosure relates to semiconductor tool monitoring system having multiple sensors configured to concurrently and independently monitor processing conditions of a semiconductor manufacturing tool. In some embodiments, the disclosed tool monitoring system comprises a first sensor system configured to monitor one or more processing conditions of a semiconductor manufacturing tool and to generate a first monitoring response based thereupon. A redundant, second sensor system is configured to concurrently monitor the one or more processing conditions of the manufacturing tool and to generate a second monitoring response based thereupon. A comparison element is configured to compare the first and second monitoring responses, and if the responses deviate from one another (e.g., have a deviation greater than a threshold value) to generate a warning signal. By comparing the first and second monitoring responses, errors in the sensor systems can be detected in real time, thereby preventing yield loss.

Abstract: In some embodiments, the present disclosure relates to a plasma processing system comprising a magnetron configured to provide a symmetric magnetic track through a combination of vibrational and rotational motion. The disclosed magnetron comprises a magnetic element configured to generate a magnetic field. The magnetic element is attached to an elastic element connected between the magnetic element and a rotational shaft configured to rotate magnetic element about a center of the sputtering target. The elastic element is configured to vary its length during rotation of the magnetic element to change the radial distance between the rotational shaft and the magnetic element. The resulting magnetic track enables concurrent motion of the magnetic element in both an angular direction and a radial direction. Such motion enables a symmetric magnetic track that provides good wafer uniformity and a short deposition time.

Abstract: In some embodiments, the present disclosure relates to a plasma processing system configured to form a symmetric plasma distribution around a workpiece. In some embodiments, the plasma processing system comprises a plurality of coils symmetrically positioned around a processing chamber. When a current is provided to the coils, separate magnetic fields, which operate to ionize the target atoms, emanate from the separate coils. The separate magnetic fields operate upon ions within the coils to form a plasma on the interior of the coils. Furthermore, the separate magnetic fields are superimposed upon one another between coils to form a plasma on the exterior of the coils. Therefore, the disclosed plasma processing system can form a plasma that continuously extends along a perimeter of the workpiece with a high degree of uniformity (i.e., without dead spaces).

Abstract: In some embodiments, the present disclosure relates to a plasma processing system that generates a magnetic field having a maximum strength that is independent of workpiece size. The plasma processing system has a plurality of side electromagnets that have a size which is independent of the workpiece size. The side electromagnets are located around a perimeter of a processing chamber configured to house a semiconductor workpiece. When a current is provided to the side electromagnets, separate magnetic fields emanate from separate positions around the workpiece. The separate magnetic fields contribute to the formation of an overall magnetic field that controls the distribution of plasma within the processing chamber. Because the size of the plurality of separate side magnets is independent of the workpiece size, the plurality of side magnets can generate a magnetic field having a maximum field strength that is independent of workpiece size.