Abstract: A method according to the present disclosure includes receiving a workpiece that includes a gate structure, a first gate spacer feature, a second gate spacer feature, a gate-top dielectric feature over the gate structure, the first gate spacer feature and the second gate spacer feature, a first source/drain feature over a first source/drain region, a second source/drain feature over a second source/drain region, a first dielectric layer over the first source/drain feature, and a second dielectric layer over the second source/drain feature. The method further includes replacing a top portion of the first dielectric layer with a first hard mask layer, forming a second hard mask layer over the first hard mask layer while the second dielectric layer is exposed, etching the second dielectric layer to form a source/drain contact opening and to expose the second source/drain feature, and forming a source/drain contact over the second source/drain feature.

Abstract: A method for filling a gap includes: filling a dielectric layer in the gap so that a seam is formed in the dielectric layer, the dielectric layer including two surface portions at two opposite sides of the seam, respectively; introducing a surface modification agent into the seam such that each of the two surface portions has first functional groups and second functional groups; forming a stress layer on the dielectric layer to cover the seam, the stress layer including a material different from that of the dielectric layer; and applying an energy field to permit the two surface portions to bond with each other through reaction between the first functional groups and the second functional groups.

Abstract: In a method of manufacturing a semiconductor device, a magnetic random access memory (MRAM) cell structure is formed. The MRAM cell structure includes a bottom electrode, a magnetic tunnel junction (MTJ) stack and a top electrode. A first insulating cover layer is formed over the MRAM cell structure. A second insulating cover layer is formed over the first insulating cover layer. An interlayer dielectric (ILD) layer is formed. A contact opening in the ILD layer is formed, thereby exposing the second insulating cover layer. A part of the second insulating cover layer and a part of the first insulating cover layer are removed, thereby exposing the top electrode. A conductive layer is formed in the opening contacting the top electrode.

Abstract: A package includes a first package component; a second package component bonded to the first package component by a first plurality of solder connectors; and a first plurality of spacer connectors extending from the first package component to the second package component. A diameter of a spacer connector the first plurality of spacer connectors is larger than a height of a solder connector of the first plurality of solder connectors, and the first plurality of spacer connectors comprises a different material than the first plurality of solder connectors.

Abstract: A semiconductor processing system is provided. The semiconductor processing system includes a first chamber arranged to perform a first semiconductor process; a second chamber arranged to perform a second semiconductor process; a cooling chamber having a pedestal; and a plurality of non-contact temperature sensors mounted in the cooling chamber, and arranged to measure a temperature of a wafer disposed on the pedestal. In one aspect, the first chamber is arranged to transfer the wafer to the cooling chamber upon completion of the first semiconductor process in the first chamber. In another aspect, the cooling chamber is arranged to measure the temperature of the wafer in the cooling chamber and arranged to transfer the wafer to the second chamber when the temperature of wafer is at a target temperature, or pause processing of the wafer when the temperature of the wafer is not at the target temperature.

Abstract: Disclosed in a robotic arm with vibration detection and image recognition, of which a main structure includes a wafer transportation device, a robotic arm rotatably mounted on the wafer transportation device, an image acquiring device arranged on the robotic arm, at least one first vibration detector arranged on the robotic arm, a second vibration detector arranged in an interior of the wafer transportation device, and a monitoring device arranged at one side of the wafer transportation device. The monitoring device includes a status inspecting part in information connection with the image acquiring device and a vibration inspecting part in information connection with the first vibration detector and the second vibration detector. By means of the above structure, the robotic arm is additionally provided with functions of wafer storage status inspecting, impact sensing, and lifespan predicting, so as to prevent mutual influence between machine structure operation instability and inspection error.

Abstract: The thin film deposition system includes: a deposition chamber, a precursor source container containing a precursor source; and a precursor conduit. The precursor conduit is elongated and extends between a proximate end and a distal end, and the proximate end is coupled to an outlet of the precursor source container, and the distal end is coupled to an inlet of the deposition chamber.

Abstract: A device and a method for robotic arm automatic correction are disclosed. A main structure includes a robotic arm including an optical photographing mechanism, and a wafer storage mechanism at one side of the robotic arm and including a graphic data code. The optical photographing mechanism is in information connection with an optical recognition module that includes a data code analysis unit, an object distance analysis unit, and a wafer center analysis unit. A user uses the optical photographing mechanism to photograph the graphic data code for implementing a first round of position correction for the robotic arm. Then, the optical photographing mechanism photographs a wafer and performs an operation of focusing for calculation of a distance between the robotic arm and a center point of the wafer by means of the object distance analysis unit in combination with the wafer center analysis unit for a second round of correction.

Abstract: A memory device includes a bottom electrode contact, a magnetic tunnel junction pattern, a protection insulating layer, a first capping layer, an interlayer insulating layer, and a second capping layer. The magnetic tunnel junction pattern is over the bottom electrode contact. The protection insulating layer surrounds the magnetic tunnel junction pattern. The first capping layer surrounds the protection insulating layer. The interlayer insulating layer surrounds the first capping layer. The second capping layer is over the first capping layer and the interlayer insulating layer.

Abstract: A device includes a microelectromechanical system (MEMS) sensor die comprising a deformable membrane, a MEMS heating element, and a substrate. The MEMS heating element is integrated within a same layer and a same plane as the deformable membrane. The MEMS heating element surrounds the deformable membrane and is separated from the deformable membrane through a trench. The MEMS heating element is configured to generate heat to heat up the deformable membrane. The substrate is coupled to the deformable membrane.

Abstract: A pressure sensor comprises a polysilicon sensing membrane. The pressure sensor further includes one or more polysilicon electrodes disposed over a silicon substrate. The sensor also includes one or more polysilicon routing layers that electrically connects electrodes of the one or more polysilicon electrodes to one another, wherein the polysilicon sensing membrane deforms responsive to a stimuli and changes a capacitance between the polysilicon sensing membrane and the one or more polysilicon electrodes. The sensor also includes one or more vacuum cavities positioned between the polysilicon sensing membrane and the one or more polysilicon electrodes.

Abstract: A method includes depositing a passivation layer on a substrate; depositing and patterning a first polysilicon layer on the passivation layer; depositing and patterning a first oxide layer on the first polysilicon layer forming a patterned first oxide layer; depositing and patterning a second polysilicon layer on the patterned first oxide layer. A portion of the second polysilicon layer directly contacts a portion of the first polysilicon layer. A portion of the patterned second polysilicon layer corresponds to a bottom electrode. A second oxide layer is deposited on the patterned second polysilicon layer and on an exposed portion of the patterned first oxide layer. A portion of the second oxide layer corresponding to a sensing cavity is etched, exposing the bottom electrode. Another substrate is bonded to the second oxide layer enclosing the sensing cavity. A top electrode is disposed within the another substrate and positioned over the bottom electrode.

Abstract: A device includes a housing unit with an internal volume. The device further includes a sensor coupled to a substrate via an electrical coupling, wherein the sensor is disposed within the internal volume of the housing unit, and wherein the sensor is in communication with an external environment of the housing unit from a side other than a side associated with the substrate. The device also includes a moisture detection unit electrically coupled to the sensor, wherein the moisture detection unit comprises at least two looped wires at different heights, and wherein the moisture detection unit is configured to detect presence of a moisture within an interior environment of the housing unit when the moisture detection unit becomes in direct contact with the moisture.

Abstract: A pressure sensor includes a first electrode, a plurality of cavities, and a second electrode. The second electrode is disposed opposite the first electrode through the plurality of cavities. The second electrode includes a flat structure spanning two adjacent cavities of the plurality of cavities.

Abstract: A method includes depositing a passivation layer on a substrate; depositing and patterning a first polysilicon layer on the passivation layer; depositing and patterning a first oxide layer on the first polysilicon layer forming a patterned first oxide layer; depositing and patterning a second polysilicon layer on the patterned first oxide layer. A portion of the second polysilicon layer directly contacts a portion of the first polysilicon layer. A portion of the patterned second polysilicon layer corresponds to a bottom electrode. A second oxide layer is deposited on the patterned second polysilicon layer and on an exposed portion of the patterned first oxide layer. A portion of the second oxide layer corresponding to a sensing cavity is etched, exposing the bottom electrode. Another substrate is bonded to the second oxide layer enclosing the sensing cavity. A top electrode is disposed within the another substrate and positioned over the bottom electrode.

Abstract: A pressure sensor comprises a polysilicon sensing membrane. The pressure sensor further includes one or more polysilicon electrodes disposed over a silicon substrate. The sensor also includes one or more polysilicon routing layers that electrically connects electrodes of the one or more polysilicon electrodes to one another, wherein the polysilicon sensing membrane deforms responsive to a stimuli and changes a capacitance between the polysilicon sensing membrane and the one or more polysilicon electrodes. The sensor also includes one or more vacuum cavities positioned between the polysilicon sensing membrane and the one or more polysilicon electrodes.

Abstract: A device includes a housing unit with an internal volume. The device further includes a sensor coupled to a substrate via an electrical coupling, wherein the sensor is disposed within the internal volume of the housing unit, and wherein the sensor is in communication with an external environment of the housing unit from a side other than a side associated with the substrate. The device also includes a moisture detection unit electrically coupled to the sensor, wherein the moisture detection unit comprises at least two looped wires at different heights, and wherein the moisture detection unit is configured to detect presence of a moisture within an interior environment of the housing unit when the moisture detection unit becomes in direct contact with the moisture.

Abstract: A device includes a housing unit with an internal volume. The device further includes a sensor coupled to a substrate via an electrical coupling, wherein the sensor is disposed within the internal volume of the housing unit, and wherein the sensor is in communication with an external environment of the housing unit from a side other than a side associated with the substrate. The device also includes a moisture detection unit electrically coupled to the sensor, wherein the moisture detection unit comprises at least two looped wires forming electrodes, and wherein the moisture detection unit is configured to detect presence of a moisture within an interior environment of the housing unit by measuring a capacitance between the electrodes and by detecting a change between the measured capacitance and a capacitance between the electrodes in absence of moisture.

Abstract: A device includes a sensor die, an electrical coupling, a substrate, a liquid detection unit, and a housing unit. The sensor die is coupled to the substrate via the electrical coupling. The liquid detection unit electrically is coupled to the sensor die. The housing unit and the substrate are configured to house the sensor die, the liquid detection unit, and the electrical coupling. The housing unit comprises an opening that exposes the sensor die to an environment external to the housing unit. The liquid detection unit detects presence of liquid within an interior environment of the housing unit. In some embodiments, the device further includes a gel filled within the interior environment of the housing unit covering the sensor die and the substrate. The gel, e.g., silicone, fluoro silicone, etc., is configured to protect the sensor die, the electrical coupling, and the substrate from exposure to the liquid.

Abstract: Robust microelectromechanical systems (MEMS) sensors and related manufacturing techniques are described. Disclosed MEMS membranes and backplate structures facilitate manufacturing robust MEMS microphones. Exemplary MEMS membranes and backplate structures can comprise edge pattern holes having a length to width ratio greater than one and/or configured in a radial arrangement. Disclosed implementations can facilitate providing robust MEMS membranes and backplate structures, having edge pattern holes with a profile resembling at least one of an oval, an egg, an ellipse, a droplet, a cone, or a capsule or similar suitable configurations according to disclosed embodiments.