Patents by Inventor Chung Hsien Lin
Chung Hsien Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20150122041Abstract: A pressure sensor comprises a first substrate and a cap attached to the first substrate. The cap includes a processing circuit, a cavity and a deformable membrane separating the cavity and a port open to an outside of the pressure sensor. Sensing means are provided for converting a response of the deformable membrane to pressure at the port into a signal capable of being processed by the processing circuit. The cap is attached to the first substrate such that the deformable membrane faces the first substrate and such that a gap is provided between the deformable membrane and the first substrate which gap contributes to the port. The first substrate comprises a support portion the cap is attached to, a contact portion for electrically connecting the pressure sensor to an external device, and one or more suspension elements for suspending the support portion from the contact portion.Type: ApplicationFiled: November 6, 2014Publication date: May 7, 2015Inventors: Chung-Hsien LIN, Rene HUMMEL, Ulrich BARTSCH, Marion HERMERSDORF, Tsung Lin TANG, Wang Shen SU, Chia Min LIN
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Publication number: 20150122038Abstract: A pressure sensor comprises a first substrate containing a processing circuit integrated thereon and a cap attached to the first substrate. The cap includes a container, a holder, and one or more suspension elements for suspending the container from the holder. The container includes a cavity and a deformable membrane separating the cavity and a port open to an outside of the pressure sensor. The container is suspended from the holder such that the deformable membrane faces the first substrate and such that a gap is provided between the deformable membrane and the first substrate which gap contributes to the port. Sensing means are provided for converting a response of the deformable membrane to pressure at the port into a signal capable of being processed by the processing circuit.Type: ApplicationFiled: October 23, 2014Publication date: May 7, 2015Inventors: Felix MAYER, Marc VON WALDKIRCH, Johannes BUHLER, Rene HUMMEL, Stephan BRAUN, Marion HERMERSDORF, Chung-Hsien LIN
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Publication number: 20150116679Abstract: Embodiments of performing a photolithography process are provided. The method for performing the photolithography process includes providing a substrate and forming a photoresist layer over the substrate. The method further includes forming exposed photoresist portions by performing an exposure process on the photoresist layer. The method further includes performing a surface modifying treatment on the photoresist layer after the exposure process and removing the exposed photoresist portions by performing a developing process.Type: ApplicationFiled: October 30, 2013Publication date: April 30, 2015Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chi-Cheng TSAI, Hung-Chi WU, Tsung-Chuan LEE, Chung-Hsien LIN
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Patent number: 9006015Abstract: Exemplary microelectromechanical system (MEMS) devices, and methods for fabricating such are disclosed. An exemplary method includes providing a silicon-on-insulator (SOI) substrate, wherein the SOI substrate includes a first silicon layer separated from a second silicon layer by an insulator layer; processing the first silicon layer to form a first structure layer of a MEMS device; bonding the first structure layer to a substrate; and processing the second silicon layer to form a second structure layer of the MEMS device.Type: GrantFiled: January 24, 2013Date of Patent: April 14, 2015Assignee: Taiwan Semiconductor Manfacturing Company, Ltd.Inventors: Chia-Hua Chu, Te-Hao Lee, Jiou-Kang Lee, Kai-Chih Liang, Chung-Hsien Lin, Chun-wen Cheng
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Patent number: 8987059Abstract: A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.Type: GrantFiled: August 9, 2012Date of Patent: March 24, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Chih Liang, Chia-Hua Chu, Te-Hao Lee, Jiou-Kang Lee, Chung-Hsien Lin
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Patent number: 8962367Abstract: The present disclosure provides a method of fabricating a micro-electro-mechanical systems (MEMS) device. In an embodiment, a method includes providing a substrate including a first sacrificial layer, forming a micro-electro-mechanical systems (MEMS) structure above the first sacrificial layer, and forming a release aperture at substantially a same level above the first sacrificial layer as the MEMS structure. The method further includes forming a second sacrificial layer above the MEMS structure and within the release aperture, and forming a first cap over the second sacrificial layer and the MEMS structure, wherein a leg of the first cap is disposed between the MEMS structure and the release aperture. The method further includes removing the first sacrificial layer, removing the second sacrificial layer through the release aperture, and plugging the release aperture. A MEMS device formed by such a method is also provided.Type: GrantFiled: March 26, 2014Date of Patent: February 24, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chung-Hsien Lin, Chia-Hua Chu, Chun-Wen Cheng
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Publication number: 20140353776Abstract: A MEMS structure incorporating multiple joined substrates and a method for forming the MEMS structure are disclosed. An exemplary MEMS structure includes a first substrate having a bottom surface and a second substrate having a top surface substantially parallel to the bottom surface of the first substrate. The bottom surface of the first substrate is connected to the top surface of the second substrate by an anchor, such that the anchor does not extend through either the bottom surface of the first substrate or the top surface of the second substrate. The MEMS structure may include a bonding layer in contact with the bottom surface of the first substrate, and shaped to at least partially envelop the anchor.Type: ApplicationFiled: June 5, 2014Publication date: December 4, 2014Inventors: Kai-Chih Liang, Jiou-Kang Lee, Chung-Hsien Lin, Te-Hao Lee, Chia-Hua Chu
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Patent number: 8887573Abstract: A vacuum sensor for sensing vacuum in a sealed enclosure is provided. The sealed enclosure includes active MEMS devices desired to be maintained in vacuum conditions. The vacuum sensor includes a motion beam anchored to an internal surface in the sealed enclosure. A driving electrode is disposed beneath the motion beam and a bias is supplied to cause the motion beam to deflect through electromotive force. A sensing electrode is also provided and detects capacitance between the sensing electrode disposed on the internal surface, and the motion beam. Capacitance changes as the gap between the motion beam and the sensing electrode changes. The amount of deflection is determined by the vacuum level in the sealed enclosure. The vacuum level in the sealed enclosure is thereby sensed by the sensing electrode.Type: GrantFiled: February 21, 2012Date of Patent: November 18, 2014Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Tung-Tsun Chen, Jui-Cheng Huang, Chung-Hsien Lin
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Publication number: 20140331484Abstract: The present disclosure provides methods of fabricating a micro-electro-mechanical systems (MEMS) switch. The methods include providing a substrate, forming a first dielectric layer disposed above the substrate, forming a bump above the first dielectric layer, providing a movable member including a top actuation electrode, and forming at least one support member that includes the first dielectric layer and is directly below the top actuation electrode. The top actuation electrode is electrically coupled to the bump.Type: ApplicationFiled: July 29, 2014Publication date: November 13, 2014Inventors: Chia-Hua Chu, Chung-Hsien Lin, Chun-Wen Cheng
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Publication number: 20140287548Abstract: The present disclosure provides a method of fabricating a micro-electro-mechanical systems (MEMS) device. In an embodiment, a method includes providing a substrate including a first sacrificial layer, forming a micro-electro-mechanical systems (MEMS) structure above the first sacrificial layer, and forming a release aperture at substantially a same level above the first sacrificial layer as the MEMS structure. The method further includes forming a second sacrificial layer above the MEMS structure and within the release aperture, and forming a first cap over the second sacrificial layer and the MEMS structure, wherein a leg of the first cap is disposed between the MEMS structure and the release aperture. The method further includes removing the first sacrificial layer, removing the second sacrificial layer through the release aperture, and plugging the release aperture. A MEMS device formed by such a method is also provided.Type: ApplicationFiled: March 26, 2014Publication date: September 25, 2014Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chung-Hsien Lin, Chia-Hua Chu, Chun-Wen Cheng
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Patent number: 8797127Abstract: The present disclosure provides in one embodiment, a semiconductor device that includes a MEMS switch having a substrate, a first dielectric layer disposed above the substrate, and a bottom signal electrode, a bump, and a bottom actuation electrode disposed above the first dielectric layer. The MEMS switch further includes a second dielectric layer enclosing the bottom signal electrode, and a movable member including a top signal electrode disposed above the bottom signal electrode and a top actuation electrode disposed above the bottom actuation electrode and the bump, wherein the top actuation electrode is electrically coupled to the bump. A method of fabricating a MEMS switch is also disclosed.Type: GrantFiled: November 22, 2010Date of Patent: August 5, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Hua Chu, Chung-Hsien Lin, Chun-Wen Cheng
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Publication number: 20140206123Abstract: Exemplary microelectromechanical system (MEMS) devices, and methods for fabricating such are disclosed. An exemplary method includes providing a silicon-on-insulator (SOI) substrate, wherein the SOI substrate includes a first silicon layer separated from a second silicon layer by an insulator layer; processing the first silicon layer to form a first structure layer of a MEMS device; bonding the first structure layer to a substrate; and processing the second silicon layer to form a second structure layer of the MEMS device.Type: ApplicationFiled: January 24, 2013Publication date: July 24, 2014Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Hua Chu, Te-Hao Lee, Jiou-Kang Lee, Kai-Chih Liang, Chung-Hsien Lin, Chun-wen Cheng
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Patent number: 8763220Abstract: Provided is a manufacturing method for a micro device. The manufacturing method includes forming a micro-electronic-mechanical system (MEMS) movable structure, forming a plurality of metal loops over the MEMS movable structure, forming a piezoelectric element over the MEMS movable structure, and a magnet disposed over the plurality of metal loops. The method also includes encapsulating the MEMS movable structure, the plurality of metal loops, and the piezoelectric element.Type: GrantFiled: February 12, 2013Date of Patent: July 1, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tien-Kan Chung, Chung-Hsien Lin, Yao-Te Huang, Chia-Hua Chu, Chia-Ming Hung, Wen-Chuan Tai, Chang-Yi Yang
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Publication number: 20140159709Abstract: A measurement device is provided. The measurement device comprises a ring-shaped base and multiple sensing units and a plurality of coils. The sensing units are disposed on and protruded from the inner circumferential surface of the ring-shaped base. Each sensing unit comprises a circumferential groove and an axial groove. The axial groove is connected to the circumferential groove. Each coil is surrounded within the circumferential groove and extended along the axial groove.Type: ApplicationFiled: December 6, 2013Publication date: June 12, 2014Applicant: Industrial Technology Research InstituteInventors: Chung-Hsien LIN, Deng-Mao WANG, Chong-Xian SU, Shou-Long YU, Chao-Yun CHEN
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Publication number: 20140159708Abstract: A measurement device is provided. The measurement device comprises a ring-shaped base and multiple sensing elements. The sensing elements are symmetrically disposed on the ring-shaped base. Each sensing element comprises a circumferential groove, an axial groove and a coil. The axial groove is connected to the circumferential groove. The coil is surrounded within the circumferential groove and extended along the axial groove.Type: ApplicationFiled: April 24, 2013Publication date: June 12, 2014Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Deng-Mao WANG, Chong-Xian SU, Chung-Hsien LIN
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Patent number: 8748205Abstract: A MEMS structure incorporating multiple joined substrates and a method for forming the MEMS structure are disclosed. An exemplary MEMS structure includes a first substrate having a bottom surface and a second substrate having a top surface substantially parallel to the bottom surface of the first substrate. The bottom surface of the first substrate is connected to the top surface of the second substrate by an anchor, such that the anchor does not extend through either the bottom surface of the first substrate or the top surface of the second substrate. The MEMS structure may include a bonding layer in contact with the bottom surface of the first substrate, and shaped to at least partially envelop the anchor.Type: GrantFiled: November 30, 2012Date of Patent: June 10, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Chih Liang, Jiou-Kang Lee, Chung-Hsien Lin, Te-Hao Lee, Chia-Hua Chu
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Publication number: 20140154841Abstract: Provided is a wafer level packaging. The packaging includes a first semiconductor wafer having a transistor device and a first bonding layer that includes a first material. The packaging includes a second semiconductor wafer having a second bonding layer that includes a second material different from the first material, one of the first and second materials being aluminum-based, and the other thereof being titanium-based. Wherein a portion of the second wafer is diffusively bonded to the first wafer through the first and second bonding layers.Type: ApplicationFiled: February 6, 2014Publication date: June 5, 2014Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Richard Chu, Martin Liu, Chia-Hua Chu, Yuan-Chih Hsieh, Chung-Hsien Lin, Lan-Lin Chao, Chun-Wen Cheng, Mingo Liu
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Patent number: 8729646Abstract: A device includes a Micro-Electro-Mechanical System (MEMS) wafer having a MEMS device therein. The MEMS device includes a movable element, and first openings in the MEMS wafer. The movable element is disposed in the first openings. A carrier wafer is bonded to the MEMS wafer. The carrier wafer includes a second opening connected to the first openings, wherein the second opening includes an entry portion extending from a surface of the carrier wafer into the carrier wafer, and an inner portion wider than the entry portion, wherein the inner portion is deeper in the carrier wafer than the entry portion.Type: GrantFiled: August 9, 2012Date of Patent: May 20, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Hua Chu, Chun-Wen Cheng, Te-Hao Lee, Chung-Hsien Lin
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Patent number: 8716051Abstract: The present disclosure provides a method of fabricating a micro-electro-mechanical systems (MEMS) device. In an embodiment, a method includes providing a substrate including a first sacrificial layer, forming a micro-electro-mechanical systems (MEMS) structure above the first sacrificial layer, and forming a release aperture at substantially a same level above the first sacrificial layer as the MEMS structure. The method further includes forming a second sacrificial layer above the MEMS structure and within the release aperture, and forming a first cap over the second sacrificial layer and the MEMS structure, wherein a leg of the first cap is disposed between the MEMS structure and the release aperture. The method further includes removing the first sacrificial layer, removing the second sacrificial layer through the release aperture, and plugging the release aperture. A MEMS device formed by such a method is also provided.Type: GrantFiled: October 21, 2010Date of Patent: May 6, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chung-Hsien Lin, Chia-Hua Chu, Chun-Wen Cheng
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Patent number: 8709849Abstract: A method of wafer level packaging includes providing a substrate including a buried oxide layer and a top oxide layer, and etching the substrate to form openings above the buried oxide layer and a micro-electro-mechanical systems (MEMS) resonator element between the openings, the MEMS resonator element enclosed within the buried oxide layer, the top oxide layer, and sidewall oxide layers. The method further includes filling the openings with polysilicon to form polysilicon electrodes adjacent the MEMS resonator element, removing the top oxide layer and the sidewall oxide layers adjacent the MEMS resonator element, bonding the polysilicon electrodes to one of a complementary metal-oxide semiconductor (CMOS) wafer or a carrier wafer, removing the buried oxide layer adjacent the MEMS resonator element, and bonding the substrate to a capping wafer to seal the MEMS resonator element between the capping wafer and one of the CMOS wafer or the carrier wafer.Type: GrantFiled: December 10, 2012Date of Patent: April 29, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Wen Cheng, Chung-Hsien Lin, Chia-Hua Chu