Abstract: A semiconductor package includes a first semiconductor die and a second semiconductor die disposed laterally adjacent one another. The semiconductor package includes a semiconductor bridge overlapping a first corner of the first semiconductor die and a second corner of the second semiconductor die. The semiconductor bridge electrically couples the first semiconductor to the second semiconductor die. The semiconductor package includes a third semiconductor die and a fourth semiconductor die electrically coupled to the first semiconductor die and the second semiconductor die, respectively. The semiconductor bridge is interposed between the third semiconductor die and the fourth semiconductor die.

Abstract: Embodiments described herein relate to a sub-pixel. The sub-pixel includes an anode, overhang structures, separation structures, an organic light emitting diode (OLED) material, and a cathode. The anode is defined by adjacent first pixel isolation structures (PIS) and adjacent second PIS. The overhang structures are disposed on the first PIS. The overhang structures include a second structure disposed over the first structure and an intermediate structure disposed between the second structure and the first structure. A bottom surface of the second structure extends laterally past an upper surface of the first structure. The first structure is disposed over the first PIS. Separation structures are disposed over the second PIS. The OLED material is disposed over the anode and an upper surface of the separation structures. The cathode disposed over the OLED material and an upper surface of the separation structures.

Abstract: A method for recovering ashing rate in a plasma processing chamber includes positioning a substrate in a processing volume of a processing chamber, wherein the substrate has a silicon chloride residue formed thereon. The method further includes evaporating the silicon chloride residue from the substrate. The method further includes depositing the evaporated silicon chloride on one or more interior surfaces in the processing volume. The method further includes exposing the deposited silicon chloride to an oxidizing environment to convert the deposited silicon chloride to a silicon oxide passivation layer. The oxidizing environment can comprise an oxygen-containing plasma, oxygen radicals, or a combination thereof.

Abstract: A light-emitting device includes a semiconductor epitaxial structure including a first semiconductor layer, an active layer, and a second semiconductor layer, and having holes; a first insulation layer disposed on the semiconductor epitaxial structure and having first and second grooves; a first pad electrically connected to the first semiconductor layer through the first grooves; and a second pad electrically connected to the second semiconductor layer through the second grooves. A projection of the first pad does not overlap projections of the holes. A projection of the second pad does not overlap the projections of the holes. The first pad includes a first pad connection portion and first pad extension portions; the second pad includes a second pad connection portion and second pad extension portions. Projections of the second grooves fall between projections of the first and second pad extension portions. Two other aspects of the light-emitting device are also provided.

Abstract: A method for handling a multi-cell scheduling and a user equipment is provided. In the method, downlink control information (DCI) from a first serving cell is received. A first number of multiple scheduled cells according to the DCI is determined. The DCI is configured to schedule at least one communication on the scheduled cells. Th communication is performed on at least one of the first number of the scheduled cells according to the DCI. The DCI includes at least one single DCI field, at least one separate DCI field and at least one configurable DCI field.

Abstract: Embodiments described herein relate to a sub-pixel. The sub-pixel includes an anode, overhang structures, separation structures, an organic light emitting diode (OLED) material, and a cathode. The anode is defined by adjacent first pixel isolation structures (PIS) and adjacent second PIS. The overhang structures are disposed on the first PIS. The overhang structures include a second structure disposed over the first structure and an intermediate structure disposed between the second structure and the first structure. A bottom surface of the second structure extends laterally past an upper surface of the first structure. The first structure is disposed over the first PIS. Separation structures are disposed over the second PIS. The OLED material is disposed over the anode and an upper surface of the separation structures. The cathode disposed over the OLED material and an upper surface of the separation structures.

Abstract: A display device includes a display panel including a plurality of pixels respectively connected to a plurality of data lines and a plurality of scan lines, a data driver which outputs data signals to the plurality of data lines including a first data line and a second data line branched from a data output terminal connected to the data driver, and a scan driver which outputs scan signals to the plurality of scan lines. A first scan output terminal and a second scan output terminal respectively connected to the plurality of scan lines are connected to the scan driver. One of the first scan output terminal and the second scan output terminal is connected to a resistance.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a package leadframe including a die pad, a first ridge formed at a first outer edge of the die pad, a second ridge formed at a second outer edge of the die pad opposite of the first outer edge and separate from the first ridge, and a plurality of leads surrounding the die pad. A semiconductor die is attached to the die pad by way of a die attach material. The semiconductor die is located on the die pad between the first ridge and the second ridge. An encapsulant encapsulates the semiconductor die and at least a portion of the package leadframe.

Abstract: A display device includes a display panel including a pixel, and a panel driver that drives the display panel. The pixel includes a light emitting device electrically connected to a first power line, a first transistor electrically connected to a cathode of the light emitting device and operating depending on a potential of a first node, a second transistor electrically connected between a data line and a second node, a third transistor electrically connected between a reference voltage line and the second node, a first capacitor electrically connected between the first node and the second node, a second capacitor electrically connected between a third node disposed between the first capacitor and the second node and the first power line, and a fourth transistor electrically connected between the first transistor and a compensation voltage line.

Abstract: A device for handling channel access procedure includes a storage device and a processing circuit coupled to the storage device and configured to execute instructions stored in the storage device. The storage device is configured for storing the instructions of receiving an indication for an uplink transmission; determining at least one parameter of the device for a listen-before-talk procedure according to a capability of the device or a signaling from a base station; and performing the uplink transmission according to the indication.

Abstract: A positive active material for a rechargeable lithium battery includes: a core having a layered structure; and a surface layer on at least one portion of the surface of the core and including an oxide, wherein the oxide includes at least one first element and at least one second element each selected from Ti, Zr, F, Mg, Al, P, and a combination thereof, the first element and the second element being different from one another, the first element included in the positive active material in an amount of about 0.01 mol % to about 0.2 mol % based on a total weight of the positive active material, and the second element included in the positive active material in an amount of about 0.02 mol % to about 0.5 mol % based on a total weight of the positive active material. A rechargeable lithium battery includes the positive active material.

Abstract: A UE for beam failure detection is provided. The RF signal processing device of the UE assesses a first radio link quality according to a first BFD-reference signal (BFD-RS) set including at least one reference signal, communicating with a plurality of transmission/reception points (TRPs) which include at least a first TRP and a second TRP. The processor of the UE is coupled to the RF signal processing device. When the first radio link quality is below a threshold, the processor generates a first indication, wherein the first indication is a first beam failure instance (BFI) or the first BFD-RS set. The processor enables a first timer and a first counter according to the first indication.

Abstract: A device for handling channel access procedure includes a storage device and a processing circuit coupled to the storage device and configured to execute instructions stored in the storage device. The storage device is configured for storing the instructions of receiving an indication for an uplink transmission; determining at least one parameter of the device for a listen-before-talk procedure according to a capability of the device or a signaling from a base station; and performing the uplink transmission according to the indication.

Abstract: Embodiments described herein relate to a sub-pixel. The sub-pixel includes an anode, overhang structures, separation structures, an organic light emitting diode (OLED) material, and a cathode. The anode is defined by adjacent first pixel isolation structures (PIS) and adjacent second PIS. The overhang structures are disposed on the first PIS. The overhang structures include a second structure disposed over the first structure and an intermediate structure disposed between the second structure and the first structure. A bottom surface of the second structure extends laterally past an upper surface of the first structure. The first structure is disposed over the first PIS. Separation structures are disposed over the second PIS. The OLED material is disposed over the anode and an upper surface of the separation structures. The cathode disposed over the OLED material and an upper surface of the separation structures.

Abstract: The present invention relates to a bi-specific antibody that specifically binds to alpha-synuclein and IGF1R, and an use of the bi-specific antibody for the prevention, treatment and/or diagnosis of synucleinopathies associated with alpha-synuclein or alpha-synuclein aggregates, and can allow the alpha-synuclein antibody or an antigen-binding fragment thereof to penetrate the blood brain barrier to exert its action in the brain, and extend the half-life to maintain the efficacy for a long time.

Abstract: A display device includes a display panel including pixels, a gate driver which sequentially applies scan signals to pixel rows including the pixels at a scan frequency, a data driver which applies data voltages to the pixels, a power voltage generator which applies a power voltage to the pixels, and a timing controller which sets a ripple frequency of the power voltage to deviate from the scan frequency by a predetermined reference ratio or more.

Abstract: A method includes forming a fin structure over a substrate, wherein the fin structure comprises first semiconductor layers and second semiconductor layers alternately stacked over a substrate; forming a dummy gate structure over the fin structure; removing a portion of the fin structure uncovered by the dummy gate structure; performing a selective etching process to laterally recess the first semiconductor layers, including injecting a hydrogen-containing gas from a first gas source of a processing tool to the first semiconductor layers and the second semiconductor layers; and injecting an F2 gas from a second gas source of the processing tool to the first semiconductor layers and the second semiconductor layers; forming inner spacers on opposite end surfaces of the laterally recessed first semiconductor layers of the fin structure; and replacing the dummy gate structure and the first semiconductor layers with a metal gate structure.

Abstract: Described are anti-doppel antibody-drug conjugates, compositions comprising them, and related methods of treating doppel-associated diseases and conditions, including cancer.

Abstract: An integrated circuit (IC) die includes first through third adjacent rows of through-silicon vias (TSVs), and first and second adjacent rows of memory macros. TSVs of the first row of TSVs extend through and are electrically isolated from memory macros of the first row of memory macros. TSVs of the third row of TSVs extend through and are electrically isolated from memory macros of the second row of memory macros.

Abstract: A base material is provided. A first patterned circuit layer and a second patterned circuit layer are formed on a first surface and a second surface of the base material. A first insulation layer and a metal reflection layer are provided on the first patterned circuit layer and a portion of the first surface exposed by the first patterned circuit layer, wherein the metal reflection layer covers the first insulation layer, and a reflectance of the metal reflection layer is substantially greater than or equal to 85%, there is no conductive material between the first patterned circuit layer and the metal reflection layer. A first ink layer is formed on the first insulation layer before the metal reflection layer is formed.