Patents by Inventor Chung-Liang Chang

Chung-Liang Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240150192
    Abstract: A semiconductor device with different configurations of gate structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a gate opening on the fin structure, forming a metallic oxide layer within the gate opening, forming a first dielectric layer on the metallic oxide layer, forming a second dielectric layer on the first dielectric layer, forming a work function metal (WFM) layer on the second dielectric layer, and forming a gate metal fill layer on the WFM layer. The forming the first dielectric layer includes depositing an oxide material with an oxygen areal density less than an oxygen areal density of the metallic oxide layer.
    Type: Application
    Filed: January 12, 2024
    Publication date: May 9, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsiang-Pi CHANG, Chung-Liang Cheng, I-Ming Chang, Yao-Sheng Huang, Huang-Lin Chao
  • Patent number: 11978674
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first source/drain epitaxial feature formed over a substrate, a second source/drain epitaxial feature formed over the substrate, two or more semiconductor layers disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature, a gate electrode layer surrounding a portion of one of the two or more semiconductor layers, a first dielectric region disposed in the substrate and in contact with a first side of the first source/drain epitaxial feature, and a second dielectric region disposed in the substrate and in contact with a first side of the second source/drain epitaxial feature, the second dielectric region being separated from the first dielectric region by a substrate.
    Type: Grant
    Filed: October 8, 2021
    Date of Patent: May 7, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: I-Ming Chang, Jung-Hung Chang, Chung-Liang Cheng, Hsiang-Pi Chang, Yao-Sheng Huang, Huang-Lin Chao
  • Patent number: 9647295
    Abstract: Provided is an electrolyte additive for a lithium ion secondary battery including an organic lithium compound and a hyper-branched structure material. The electrolyte additive enhances the decomposition voltage of the electrolyte up to 5.5 V, and increases the heat endurable temperature by 10° C. or more. The safety of the battery is thus improved.
    Type: Grant
    Filed: December 19, 2013
    Date of Patent: May 9, 2017
    Assignee: Industrial Technology Research Institute
    Inventors: Tsung-Hsiung Wang, Chung-Liang Chang, Jing-Pin Pan
  • Patent number: 9054376
    Abstract: A cathode material structure and a method for preparing the same are described. The cathode material structure includes a material body and a composite film coated thereon. The material body has a particle size of 0.1-50 ?m. The composite film has a porous structure and electrical conductivity.
    Type: Grant
    Filed: March 14, 2011
    Date of Patent: June 9, 2015
    Assignee: Industrial Technology Research Institute
    Inventors: Tsung-Hsiung Wang, Jing-Pin Pan, Chung-Liang Chang, Yu-Ling Lin
  • Patent number: 9005842
    Abstract: Proton exchange membrane compositions having high proton conductivity are provided. The proton exchange membrane composition includes a hyper-branched polymer, wherein the hyper-branched polymer has a DB (degree of branching) of more than 0.5. A polymer with high ion conductivity is distributed uniformly over the hyper-branched polymer, wherein the hyper-branched polymer has a weight ratio equal to or more than 5 wt %, based on the solid content of the proton exchange membrane composition.
    Type: Grant
    Filed: August 24, 2009
    Date of Patent: April 14, 2015
    Assignee: Industrial Technology Research Institute
    Inventors: Tsung-Hsiung Wang, Jing-Pin Pan, Wen-Chin Lee, Yueh-Wei Lin, Ya-Tin Hsu, Chung-Liang Chang, Chih-Jer Shih
  • Patent number: 8932747
    Abstract: A lithium battery is provided. The lithium battery comprises a first plate, a second plate and a separator. The first plate is composed of a plurality of electrode material layers stacked on one another. At least one of the electrode material layers comprises a thermal activation material. The separator is disposed between the first plate and the second plate.
    Type: Grant
    Filed: August 24, 2011
    Date of Patent: January 13, 2015
    Assignee: Industrial Technology Research Institute
    Inventors: Ping-Yao Wu, Wen-Bing Chu, Chang-Rung Yang, Jen-Jeh Lee, Jing-Pin Pan, Jung-Mu Hsu, Shu-Heng Wen, Hung-Chun Wu, Chung-Liang Chang
  • Publication number: 20140178751
    Abstract: Provided is an electrolyte additive for a lithium ion secondary battery including an organic lithium compound and a hyper-branched structure material. The electrolyte additive enhances the decomposition voltage of the electrolyte up to 5.5 V, and increases the heat endurable temperature by 10° C. or more. The safety of the battery is thus improved.
    Type: Application
    Filed: December 19, 2013
    Publication date: June 26, 2014
    Applicant: Industrial Technology Research Institute
    Inventors: Tsung-Hsiung Wang, Chung-Liang Chang, Jing-Pin Pan
  • Patent number: 8597070
    Abstract: A plant imitating device includes a body having a compartment and an opening in communication with the compartment. A driving unit is mounted in the compartment and includes a transmission member. A plant imitating unit is mounted in the compartment and includes an end facing the opening of the body. The plant imitating unit is engaged with the transmission member by a mounting portion. The plant imitating unit is movable relative to the transmission member. A control unit is electrically connected to the driving unit. The control unit controls the driving unit to cause the end of the plant imitating unit to move beyond the body via the opening. Thus, the end of the plant imitating unit gradually extends beyond the opening to imitate the growth of a plant.
    Type: Grant
    Filed: March 28, 2011
    Date of Patent: December 3, 2013
    Assignee: National Pingtung University of Science and Technology
    Inventors: Chung-Liang Chang, Ming-Fong Sie
  • Patent number: 8555657
    Abstract: An environment control apparatus for cultivating plants includes a casing having a bottom with first and second holes. A thermoelectric cooling module is mounted in the first hole and includes first and second sides. The first side faces the casing. A temperature control pipe includes two ends connected to a heat reservoir. The temperature control pipe includes a heat exchanging section in contact with the second side of the thermoelectric cooling module. A first power device is mounted on the temperature control pipe. An auxiliary heat pipe includes two ends connected to the heat reservoir. The auxiliary heat pipe includes a heat dissipating section located in the second hole. A processor is coupled to the thermoelectric cooling module and the first power device.
    Type: Grant
    Filed: March 28, 2011
    Date of Patent: October 15, 2013
    Assignee: National Pingtung University of Science and Technology
    Inventor: Chung-Liang Chang
  • Patent number: 8501368
    Abstract: The disclosed forms a proton exchange membrane. First, multi-maleimide and barbituric acid are copolymerized to form a hyper-branched polymer. Next, the solvent of the sulfonated tetrafluoroethylene copolymer (Nafion) aqueous solution is replaced from water with dimethyl acetamide (DMAc). 10 to 20 parts by weight of the hyper-branched polymer is added to the 90 to 80 parts by weight of the Nafion in a DMAc solution, stood and heated to 50° C. to inter-penetrate the hyper-branched polymer and the Nafion. The heated solution is coated on a substrate, baked, and pre-treated to remove residue solvent for completing an inter-penetrated proton exchange membrane.
    Type: Grant
    Filed: September 25, 2009
    Date of Patent: August 6, 2013
    Assignee: Industrial Technology Research Institute
    Inventors: Jing-Pin Pan, Yueh-Wei Lin, Chung-Liang Chang, Li-Duan Tsai, Ya-Tin Hsu
  • Patent number: 8389639
    Abstract: A proton exchange membrane comprising modified hyper-branched polymer is disclosed. The proton exchange membrane includes 85-90 wt % of sulfonated tetrafluorethylene copolymer and 15-10 wt % of modified hyper-branched polymer. The modified hyper-branched polymer comprises the bismaleimide (BMI)-based hyper-branched polymer, and parts of the chain ends of the hyper-branched polymer are sulfonated by the sulfonic compound. Also, the modified hyper-branched polymer and sulfonated tetrafluorethylene copolymer are interpenetrated to form an interpenetrating polymer. Furthermore, the modification step could be performed before or after forming the interpenetrating polymer. For example, the sulfonation is proceeded after forming the interpenetrating polymer. Alternatively, the sulfonation of the hyper-branched polymer could be proceeded before the formation of the interpenetrating polymer.
    Type: Grant
    Filed: November 23, 2009
    Date of Patent: March 5, 2013
    Assignee: Industrial Technology Research Institute
    Inventors: Chung-Liang Chang, Ya-Ting Hsu, Jing-Pin Pan
  • Patent number: 8277619
    Abstract: An electroplating apparatus for depositing a conductive material on a semiconductor wafer includes a vessel for holding an electroplating bath, a support for holding a semiconductor wafer within the vessel and beneath a surface of the bath; first and second electrodes within the vessel, between which an electrical current may flow causing conductive material to be electrolytically deposited onto the wafer, a third electrode disposed outside of the bath for applying a static electric charge to the wafer, and an electrical power supply coupled with the third electrode.
    Type: Grant
    Filed: July 6, 2011
    Date of Patent: October 2, 2012
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chung-Liang Chang, Shau-Lin Shue
  • Publication number: 20120164512
    Abstract: A lithium battery is provided. The lithium battery comprises a first plate, a second plate and a separator. The first plate is composed of a plurality of electrode material layers stacked on one another. At least one of the electrode material layers comprises a thermal activation material. The separator is disposed between the first plate and the second plate.
    Type: Application
    Filed: August 24, 2011
    Publication date: June 28, 2012
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Ping-Yao Wu, Wen-Bing Chu, Chang-Rung Yang, Jen-Jeh Lee, Jing-Pin Pan, Jung-Mu Hsu, Shu-Heng Wen, Hung-Chun Wu, Chung-Liang Chang
  • Publication number: 20120153231
    Abstract: A cathode material structure and a method for preparing the same are described. The cathode material structure includes a material body and a composite film coated thereon. The material body has a particle size of 0.1-50 ?m. The composite film has a porous structure and electrical conductivity.
    Type: Application
    Filed: March 14, 2011
    Publication date: June 21, 2012
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Tsung-Hsiung Wang, Jing-Pin Pan, Chung-Liang Chang, Yu-Ling Lin
  • Patent number: 8178437
    Abstract: A semiconductor diffusion barrier layer and its method of manufacture is described. The barrier layer includes of at least one layer of TaN, TiN, WN, TbN, VN, ZrN, CrN, WC, WN, WCN, NbN, AlN, and combinations thereof. The barrier layer may further include a metal rich surface. Embodiments preferably include a glue layer about 10 to 500 Angstroms thick, the glue layer consisting of Ru, Ta, Ti, W, Co, Ni, Al, Nb, AlCu, and a metal-rich nitride, and combinations thereof. The ratio of the glue layer thickness to the barrier layer thickness is preferably about 1 to 50. Other alternative preferred embodiments further include a conductor annealing step. The various layers may be deposited using PVD, CVD, PECVD, PEALD and/or ALD methods including nitridation and silicidation methods.
    Type: Grant
    Filed: July 29, 2008
    Date of Patent: May 15, 2012
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chung-Liang Chang, Ching-Hua Hsieh, Shau-Lin Shue
  • Patent number: 8088447
    Abstract: A series of crosslinkable sulfonated poly(ether ketone)s containing cycloalkenyl groups were synthesized by aromatic nucleophilic substitution reaction. To decrease the swelling of fuel cell membranes, crosslinking of theses polymers by radical polymerization has been explored. These polymeric films exhibit good thermal and oxidative stability, and good dimensional stability in hot water. The proton conductivity of one example at room temperature is 7.52*10?2 S/cm. The results showed that these materials containing cycloalkenyl groups are possible inexpensive candidate materials for proton exchange membranes in fuel cell applications.
    Type: Grant
    Filed: June 2, 2009
    Date of Patent: January 3, 2012
    Assignees: Industrial Technology Research Institute, National Central University
    Inventors: Chung-Liang Chang, Ming-Chou Chen, Ko-Lun Hsu, Hsing-Chieh Li, Chi-Han Hsieh, Peter Po-Jen Chu
  • Publication number: 20110275275
    Abstract: A plant imitating device includes a body having a compartment and an opening in communication with the compartment. A driving unit is mounted in the compartment and includes a transmission member. A plant imitating unit is mounted in the compartment and includes an end facing the opening of the body. The plant imitating unit is engaged with the transmission member by a mounting portion. The plant imitating unit is movable relative to the transmission member. A control unit is electrically connected to the driving unit. The control unit controls the driving unit to cause the end of the plant imitating unit to move beyond the body via the opening. Thus, the end of the plant imitating unit gradually extends beyond the opening to imitate the growth of a plant.
    Type: Application
    Filed: March 28, 2011
    Publication date: November 10, 2011
    Inventors: Chung-Liang Chang, Ming-Fong Sie
  • Publication number: 20110259734
    Abstract: An electroplating apparatus for depositing a conductive material on a semiconductor wafer includes a vessel for holding an electroplating bath, a support for holding a semiconductor wafer within the vessel and beneath a surface of the bath; first and second electrodes within the vessel, between which an electrical current may flow causing conductive material to be electrolytically deposited onto the wafer, a third electrode disposed outside of the bath for applying a static electric charge to the wafer, and an electrical power supply coupled with the third electrode.
    Type: Application
    Filed: July 6, 2011
    Publication date: October 27, 2011
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chung-Liang Chang, Shau-Lin Shue
  • Publication number: 20110259019
    Abstract: An environment control apparatus for cultivating plants includes a casing having a bottom with first and second holes. A thermoelectric cooling module is mounted in the first hole and includes first and second sides. The first side faces the casing. A temperature control pipe includes two ends connected to a heat reservoir. The temperature control pipe includes a heat exchanging section in contact with the second side of the thermoelectric cooling module. A first power device is mounted on the temperature control pipe. An auxiliary heat pipe includes two ends connected to the heat reservoir. The auxiliary heat pipe includes a heat dissipating section located in the second hole. A processor is coupled to the thermoelectric cooling module and the first power device.
    Type: Application
    Filed: March 28, 2011
    Publication date: October 27, 2011
    Inventor: Chung-Liang CHANG
  • Patent number: 8008360
    Abstract: A proton exchange membrane and method for formation the same is disclosed. When forming the proton exchange membrane, first, a bismaleimide and barbituric acid are copolymerized to form a hyper-branched polymer. Next, the solvent of the sulfonated tetrafluorethylene copolymer (Nafion) aqueous solution is replaced with dimethyl acetamide (DMAc). 10 to 15 parts by weight of the hyper-branched polymer is added to 90 to 85 parts by weight of the Nafion in the DMAc solution, stood and heated to 50° C. for inter-penetration of the hyper-branched polymer and the Nafion. The heated solution is coated on a substrate, baked, and pre-treated to remove residue solvent to complete formation of the proton exchange membrane.
    Type: Grant
    Filed: April 3, 2009
    Date of Patent: August 30, 2011
    Assignee: Industrial Technology Research Institute
    Inventors: Chung-Liang Chang, Jing-Pin Pan, Tsung-Hsiung Wang, Yueh-Wei Lin, Ya-Tin Hsu