Abstract: A method of electroplating conductive material on semiconductor wafers controls undesirable surface defects by reducing the electroplating current as the wafer is being initially immersed in a plating bath. Further defect reduction and improved bottom up plating of vias is achieved by applying a static charge on the wafer before it is immersed in the bath, in order to enhance bath accelerators used to control the plating rate. The static charge is applied to the wafer using a supplemental electrode disposed outside the plating bath.

Abstract: A proton exchange membrane comprising modified hyper-branched polymer is disclosed. The proton exchange membrane includes 85-90 wt % of sulfonated tetrafluorethylene copolymer and 15-10 wt % of modified hyper-branched polymer. The modified hyper-branched polymer comprises the bismaleimide (BMI)-based hyper-branched polymer, and parts of the chain ends of the hyper-branched polymer are sulfonated by the sulfonic compound. Also, the modified hyper-branched polymer and sulfonated tetrafluorethylene copolymer are interpenetrated to form an interpenetrating polymer. Furthermore, the modification step could be performed before or after forming the interpenetrating polymer. For example, the sulfonation is proceeded after forming the interpenetrating polymer. Alternatively, the sulfonation of the hyper-branched polymer could be proceeded before the formation of the interpenetrating polymer.

Abstract: A spinning reel includes a holder base having two racks, an accommodation space defined between the racks and two axle holes in communication with the accommodation space at two sides, two transmission shafts respectively mounted in the axle holes, slide blocks at two sides of the holder base, a steering mechanism, which comprises two swivel brackets pivotally mounted in the accommodation space and biasable relative to each other, a skirted spool mounted in between the swivel brackets, a driving mechanism coupled to one transmission gear and adapted for rotating the skirted spool by means of a driving gear set and a rotating device coupled to the other transmission shaft and adapted for moving the slide blocks through a drive gear set and a follower gear set to force one transmission shaft into engagement with one end of the skirted spool and to bias one swivel bracket and the skirted spool between a horizontal position and a vertical position.

Abstract: A series of crosslinkable sulfonated poly(ether ketone)s containing cycloalkenyl groups were synthesized by aromatic nucleophilic substitution reaction. To decrease the swelling of fuel cell membranes, crosslinking of theses polymers by radical polymerization has been explored. These polymeric films exhibit good thermal and oxidative stability, and good dimensional stability in hot water. The proton conductivity of one example at room temperature is 7.52*10?2 S/cm. The results showed that these materials containing cycloalkenyl groups are possible inexpensive candidate materials for proton exchange membranes in fuel cell applications.

Abstract: Proton exchange membrane compositions having high proton conductivity are provided. The proton exchange membrane composition includes a hyper-branched polymer, wherein the hyper-branched polymer has a DB (degree of branching) of more than 0.5. A polymer with high ion conductivity is distributed uniformly over the hyper-branched polymer, wherein the hyper-branched polymer has a weight ratio equal to or more than 5 wt %, based on the solid content of the proton exchange membrane composition.

Abstract: The disclosed forms a proton exchange membrane. First, multi-maleimide and barbituric acid are copolymerized to form a hyper-branched polymer. Next, the solvent of the sulfonated tetrafluorethylene copolymer (Nafion) aqueous solution is replaced from water with dimethyl acetamide (DMAc). 10 to 20 parts by weight of the hyper-branched polymer is added to the 90 to 80 parts by weight of the Nafion in a DMAc solution, stood and heated to 50° C. to inter-penetrate the hyper-branched polymer and the Nafion. The heated solution is coated on a substrate, baked, and pre-treated to remove residue solvent for completing an inter-penetrated proton exchange membrane.

Abstract: A method of electroplating conductive material on semiconductor wafers controls undesirable surface defects by reducing the electroplating current as the wafer is being initially immersed in a plating bath. Further defect reduction and improved bottom up plating of vias is achieved by applying a static charge on the wafer before it is immersed in the bath, in order to enhance bath accelerators used to control the plating rate. The static charge is applied to the wafer using a supplemental electrode disposed outside the plating bath.

Abstract: A spinning reel includes a holder base having two racks, an accommodation space defined between the racks and two axle holes in communication with the accommodation space at two sides, two transmission shafts respectively mounted in the axle holes, slide blocks at two sides of the holder base, a steering mechanism, which comprises two swivel brackets pivotally mounted in the accommodation space and biasable relative to each other, a skirted spool mounted in between the swivel brackets, a driving mechanism coupled to one transmission gear and adapted for rotating the skirted spool by means of a driving gear set and a rotating device coupled to the other transmission shaft and adapted for moving the slide blocks through a drive gear set and a follower gear set to force one transmission shaft into engagement with one end of the skirted spool and to bias one swivel bracket and the skirted spool between a horizontal position and a vertical position.

Abstract: A proton exchange membrane and method for formation the same is disclosed. When forming the proton exchange membrane, first, a bismaleimide and barbituric acid are copolymerized to form a hyper-branched polymer. Next, the solvent of the sulfonated tetrafluorethylene copolymer (Nafion) aqueous solution is replaced with dimethyl acetamide (DMAc). 10 to 15 parts by weight of the hyper-branched polymer is added to 90 to 85 parts by weight of the Nafion in the DMAc solution, stood and heated to 50° C. for inter-penetration of the hyper-branched polymer and the Nafion. The heated solution is coated on a substrate, baked, and pre-treated to remove residue solvent to complete formation of the proton exchange membrane.

Abstract: A method of electroplating conductive material on semiconductor wafers controls undesirable surface defects by reducing the electroplating current as the wafer is being initially immersed in a plating bath. Further defect reduction and improved bottom up plating of vias is achieved by applying a static charge on the wafer before it is immersed in the bath, in order to enhance bath accelerators used to control the plating rate. The static charge is applied to the wafer using a supplemental electrode disposed outside the plating bath.

Abstract: A spinning reel includes a body, which has two sliding plates coupled to two opposite lateral sides of the base thereof, a spool holder, which has a U-shaped frame pivotally mounted in the base of the body and a spool pivotally coupled to the U-shaped frame, a spool rotating mechanism, which has two pins axially movable to engage the spool and a gear set mounted on one pin for rotating the spool to take up a fishing line, and a spool biasing mechanism, which has a drive gear set, a operating bar for operation by a person to rotate the drive gear set, a driven gear set coupled to the drive gear set and rotatable to move the sliding plates in moving the pins of the spool rotating mechanism into engagement with spool or away from the spool, and a transmission device coupled between the driven gear set and the spool holder for causing the spool holder to be biased between a horizontal position and a vertical position upon rotation of the drive gear set by the operating bar.

Abstract: A spinning reel includes a body, which has two sliding plates coupled to two opposite lateral sides of the base thereof, a spool holder, which has a U-shaped frame pivotally mounted in the base of the body and a spool pivotally coupled to the U-shaped frame, a spool rotating mechanism, which has two pins axially movable to engage the spool and a gear set mounted on one pin for rotating the spool to take up a fishing line, and a spool biasing mechanism, which has a drive gear set, a operating bar for operation by a person to rotate the drive gear set, a driven gear set coupled to the drive gear set and rotatable to move the sliding plates in moving the pins of the spool rotating mechanism into engagement with spool or away from the spool, and a transmission device coupled between the driven gear set and the spool holder for causing the spool holder to be biased between a horizontal position and a vertical position upon rotation of the drive gear set by the operating bar.

Abstract: A semiconductor diffusion barrier layer and its method of manufacture is described. The barrier layer includes of at least one layer of TaN, TiN, WN, TbN, VN, ZrN, CrN, WC, WN, WCN, NbN, AlN, and combinations thereof. The barrier layer may further include a metal rich surface. Embodiments preferably include a glue layer about 10 to 500 Angstroms thick, the glue layer consisting of Ru, Ta, Ti, W, Co, Ni, Al, Nb, AlCu, and a metal-rich nitride, and combinations thereof. The ratio of the glue layer thickness to the barrier layer thickness is preferably about 1 to 50. Other alternative preferred embodiments further include a conductor annealing step. The various layers may be deposited using PVD, CVD, PECVD, PEALD and/or ALD methods including nitridation and silicidation methods.

Abstract: A metal filled damascene structure with improved electromigration resistance and method for forming the same, the method including providing a semiconductor process wafer comprising damascene openings; and, depositing metal and at least one metal dopant according to an ECD process to from a metal filled damascene comprising a doped metal alloy portion.

Abstract: A composition and process suitable for the passivation of metal lines, layers or surfaces, particularly for the passivation of copper in the fabrication of integrated circuit devices on wafer substrates. The process includes providing a novel composition solution in contact with a copper line, layer or surface on a substrate as the copper is subjected to chemical mechanical planarization (CMP). The composition includes reactive cations of a displacement metal which are suspended in solution and spontaneously displace the copper atoms in the copper in an oxidation/reduction reaction. The oxidized and displaced copper cations are carried away by the composition solution, and the newly-incorporated metal atoms in the copper substantially inhibit or prevent growth of copper oxides in the copper.

Abstract: A method of electroplating conductive material on semiconductor wafers controls undesirable surface defects by reducing the electroplating current as the wafer is being initially immersed in a plating bath. Further defect reduction and improved bottom up plating of vias is achieved by applying a static charge on the wafer before it is immersed in the bath, in order to enhance bath accelerators used to control the plating rate. The static charge is applied to the wafer using a supplemental electrode disposed outside the plating bath.

Abstract: A semiconductor diffusion barrier layer and its method of manufacture is described. The barrier layer includes of at least one layer of TaN, TiN, WN, TbN, VN, ZrN, CrN, WC, WN, WCN, NbN, AlN, and combinations thereof. The barrier layer may further include a metal rich surface. Embodiments preferably include a glue layer about 10 to 500 Angstroms thick, the glue layer consisting of Ru, Ta, Ti, W, Co, Ni, Al, Nb, AlCu, and a metal-rich nitride, and combinations thereof. The ratio of the glue layer thickness to the barrier layer thickness is preferably about 1 to 50. Other alternative preferred embodiments further include a conductor annealing step. The various layers may be deposited using PVD, CVD, PECVD, PEALD and/or ALD methods including nitridation and silicidation methods.

Abstract: A method of forming a copper structure, comprising the following steps. A substrate is provided. A patterned dielectric layer is formed over the substrate with the patterned dielectric layer having an opening exposing a portion of the substrate. The opening having exposed sidewalls. A Sn layer is formed directly upon the exposed sidewalls of the opening. A copper seed layer is formed upon the Sn layer within the opening. A bulk copper layer is formed over the copper seed layer, filling the opening. The structure is thermally annealed whereby Sn diffuses from the Sn layer into the copper seed layer and the bulk copper layer forming CuSn alloy within the copper seed layer and the bulk copper layer.

Abstract: A method of forming an oxide free copper interconnect, comprising the following steps. A substrate is provided and a patterned dielectric layer is formed over the substrate. The patterned dielectric layer having an opening exposing a portion of the substrate. The opening having exposed sidewalls. A copper seed layer is formed over the sidewalls of the opening. The copper seed layer is subjected to an electrochemical technique to eliminate any copper oxide formed over the copper seed layer. A bulk copper layer is electrochemically plated over the copper-oxide-free copper seed layer, filling the opening and forming the oxide-free copper interconnect.

Abstract: The connecting mechanism of the invention is pivotally mounted between the display device and the computer host. The connecting mechanism has an articulated arm having a first rod and a second rod connected to each other via a hinge. The ends of the first rod are respectively pivotally connected to a sidewall of the computer host and the hinge. The second rod is longer than at least half a width of the display device. A third end of the second rod is pivotally mounted on a sidewall of the display device in an appropriate location, such as a central part of the sidewall. A fourth end of the second rod is pivotally connected to the hinge. The above arrangement allows inclination and horizontal/vertical adjustments of the display device relative to the computer host.