Abstract: A method is provided. The method includes determining a first bump map indicative of a first set of positions of bumps. The method includes determining, based upon the first bump map, a first plurality of bump densities associated with a plurality of regions of the first bump map. The method includes smoothing the first plurality of bump densities to determine a second plurality of bump densities associated with the plurality of regions of the first bump map. The method includes determining, based upon the second plurality of bump densities, a second bump map indicative of the first set of positions of the bumps and a set of sizes of the bumps.

Abstract: A base material is provided. A first patterned circuit layer and a second patterned circuit layer are formed on a first surface and a second surface of the base material. A first insulation layer and a metal reflection layer are provided on the first patterned circuit layer and a portion of the first surface exposed by the first patterned circuit layer, wherein the metal reflection layer covers the first insulation layer, and a reflectance of the metal reflection layer is substantially greater than or equal to 85%, there is no conductive material between the first patterned circuit layer and the metal reflection layer. A first ink layer is formed on the first insulation layer before the metal reflection layer is formed.

Abstract: An integrated circuit device includes a device layer having devices spaced in accordance with a predetermined device pitch, a first metal interconnection layer disposed above the device layer and coupled to the device layer, and a second metal interconnection layer disposed above the first metal interconnection layer and coupled to the first metal interconnection layer through a first via layer. The second metal interconnection layer has metal lines spaced in accordance with a predetermined metal line pitch, and a ratio of the predetermined metal line pitch to predetermined device pitch is less than 1.

Abstract: An apparatus having a first portion including a first front wall, a first rear wall, and a bottom wall integrally coupled to the first front wall and the first rear wall, and pivotal pin structures integrally coupled to and extending from the first rear wall. The apparatus includes a second portion having a second front wall, a second rear wall, and a top wall integrally coupled to the second front wall and the second rear wall, and pin holders integrally coupled to and extending from the second rear wall and at an offset angle with reference to the top wall. The pivotal pin structure includes a base support connected to the first rear wall and a shaft connected to the base support, and the pin holder defines an opening sized and shaped to accept the shaft. The first and second portions are sized and shaped to be pivotally movable between open and closed configurations.

Abstract: A light emitting device includes a light-emitting laminate and an insulating reflective structure. The insulating reflective structure includes n pairs of dielectric layers stacked on the light-emitting laminate. Each of the n pairs of dielectric layers includes a first material layer and a second material layer. The first material layer has a first refractive index, and the second material layer has a second refractive index that is greater than the first refractive index of the first material layer. For each pair of dielectric layers among m1 pairs of dielectric layers out of the n pairs of dielectric layers, the first material layer has an optical thickness that is greater than that of the second material layer, where 0.5n?m1?n, and n and m1 are natural numbers greater than 0.

Abstract: The present disclosure relates to an integrated circuit (IC) that includes a boundary region defined between a low voltage region and a high voltage region, and a method of formation. In some embodiments, the integrated circuit comprises an isolation structure disposed in the boundary region of the substrate. A first polysilicon component is disposed directly on an upper surface of the substrate alongside the isolation structure. A boundary dielectric layer is disposed on the isolation structure. A second polysilicon component is disposed on the sacrifice dielectric layer.

Abstract: A method includes performing a plasma activation on a surface of a first package component, removing oxide regions from surfaces of metal pads of the first package component, and performing a pre-bonding to bond the first package component to a second package component.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip (IC). The IC comprises a substrate. A resistor overlies the substrate. The resistor comprises a first metal nitride structure, a second metal nitride structure spaced from the first metal nitride structure, and a metal structure disposed between the first metal nitride structure and the second metal nitride structure. A first dielectric structure is disposed over the substrate and the resistor.

Abstract: A method for manufacturing a semiconductor device includes: providing a wafer-bonding stack structure having a sidewall layer and an exposed first component layer; forming a photoresist layer on the first component layer; performing an edge trimming process to at least remove the sidewall layer; and removing the photoresist layer. In this way, contaminant particles generated from the blade during the edge trimming process may fall on the photoresist layer but not fall on the first component layer, so as to protect the first component layer from being contaminated.

Abstract: A method for manufacturing a semiconductor structure is provided. The method includes: providing a substrate and a dielectric layer on the substrate; forming a hole in the dielectric layer; forming an initial barrier material layer and a conductive layer on an upper surface of the dielectric layer and in the hole; removing part of the initial barrier material layer and part of the conductive layer to form a barrier material layer and a via element in the hole respectively and expose the upper surface of the dielectric layer. An upper surface of the barrier material layer is higher than the upper surface of the dielectric layer.

Abstract: A semiconductor device with different gate structure configurations and a method of fabricating the semiconductor device are disclosed. The method includes depositing a high-K dielectric layer surrounding nanostructured channel regions, performing a first doping with a rare-earth metal (REM)-based dopant on first and second portions of the high-K dielectric layer, and performing a second doping with the REM-based dopants on the first portions of the high-K dielectric layer and third portions of the high-K dielectric layer. The first doping dopes the first and second portions of the high-K dielectric layer with a first REM-based dopant concentration. The second doping dopes the first and third portions of the high-K dielectric layer with a second REM-based dopant concentration different from the first REM-based dopant concentration.

Abstract: A display apparatus includes a backlight component, a light adjusting component, a display panel, and a first polarizing film. The backlight component is configured to generate polarized light. The light adjusting component is disposed on one side of the backlight component, and is configured to deflect or not deflect polarized light generated by the backlight component. The first polarizing film is disposed between the light adjusting component and the display panel. In the display apparatus) provided in this application, when the polarized light obtained after passing through the light adjusting component passes through the first polarizing film, if a vibration direction of the polarized light is consistent with a transmission direction of the first polarizing film, the polarized light can be transmitted. If the vibration direction of the polarized light is perpendicular to the transmission direction of the first polarizing film, the polarized light cannot be transmitted.

Abstract: The present invention discloses a dielectric filter with multilayer resonator, including a dielectric block, a plurality of multilayer resonator formed in the dielectric block, wherein each multilayer resonator is in a column shape extending in a first direction into the dielectric block and is formed of multiple metal layers paralleling and overlapping each other in a second direction, and vias extend in the second direction and connecting the metal layers in each multilayer resonator, and a ground electrode connected to the ground terminal of each multilayer resonator.

Abstract: Provided is a mount for a webcam for installing the webcam on a computer display, and the webcam set on the mount can be moved in a horizontal direction to an appropriate distance beyond the display and then rotated 90°, so that a camera lens of the webcam can be vertically oriented downward to capture an image on a table, so as to avoid capturing a part of the screen of the display, or causing the captured image distortion.

Abstract: Provided is an input and output device for multiple formats of video class, which receives images from at least one camera connected thereto and outputs the images to a computing device connected thereto. The input and output device for multiple formats of video class includes a USB host control unit and an image processing unit. The USB host control unit receives the images from the at least one camera. The image processing unit is connected to the USB host control unit to receive the images and perform an image merge processing on the images to merge the images into a merged image. The image merge processing includes at least one merged image display mode. The image processing unit transmits the merged image to the computing device according to a selected merged image display mode.

Abstract: In one embodiment, a carrier device for a thermal pad of an information handling system includes: a first adhesive surface coupled to the thermal pad, the thermal pad coupled to a first surface of a first component of the information handling system, the thermal pad configured to absorb a heat generated by the first component; a thermal transfer window configured to permit the heat generated by the first component to transfer from the thermal pad to a second surface of a second component of the information handling system; and a second adhesive surface removably coupled to the second surface of the second component.

Abstract: An antenna element comprises one or more directors, a resonator, and a three dimensional ground assembly. Parts of the antenna element are arranged on three metal layers. A top layer has an unconnected metal bar which forms a beam director, a resonator and a top part of the ground assembly. The resonator is an integral piece substantially in the form of a loop connected to a feed line and a feed line terminal ending. The feed line terminal ending serves as the ground plane for the feed line as well as providing impedance matching from the external transceiver circuit to the resonator. The ground assembly includes a top layer ground connected to a plurality of metallized half cylindrical hole channels (or metallized via holes) which connect to a ground terminal in a bottom layer.

Abstract: A semiconductor device package and a method for manufacturing a semiconductor device package are provided. The semiconductor device package includes a carrier, a sensor module, a connector, and a stress buffer structure. The sensor module is disposed on the carrier. The connector is connected to the carrier. The stress buffer structure connects the connector to the sensor module.

Abstract: The present invention relates to an optical stack and an organic light emitting diode display including the optical stack, wherein the optical stack has an adhesive layer. The adhesive layer is disposed between a cover plate and a circular polarizer component, between the circular polarizer component and a touch component, or between the touch component and a display component. Wherein, a storage modulus at 60° C. of the adhesive layer is between 15 kPa and 30 kPa, and a ratio of a storage modulus at ?30° C. to the storage modulus at 60° C. of the adhesive layer is between 6 and 16.

Abstract: Provided is a multifunctional image-shooting and sound-receiving device, including a controller, a built-in microphone, a switching unit, an adjustment unit, a drive unit, a sensor and a motor. The built-in microphone is connected to the controller and receives at least one microphone sound signal. The switching unit is connected to and transmits a switching signal to the controller. The adjustment unit is connected to and transmits an adjustment signal to the controller. The drive unit is connected to and receives a drive control signal from the controller. The sensor is connected to and receives a sensing control signal from the controller, and transmits sensing information thereto. The motor is connected to and receives a driving signal from the drive unit, and integrated with a lens. The controller switches the multifunctional image-shooting and sound-receiving device to one of a first mode and a second mode according to the switching signal.