Abstract: Embodiments of the present disclosure relates to a wet bench processing including an in-situ pre-treatment prior to performing the first set of wet bench operations. The pre-treatment may include a pre-clean operation and/or a pre-heat operation. The pre-treatment may be performed in one of the existing ONB tanks without requiring adding new tanks to an existing wet bench tool. The pre-clean operation removes particles from a batch of wafers to avoid or reduce cross-contamination and defect issues, thus improving the yield rate of the wet bench process. The pre-heat operation provides better control and stabilize the temperature in the CHB tank to stabilize the process, such as to stabilize an etch rate.

Abstract: A method for maintaining lamellar structure of cell, configured to manufacture a lamellar cell product, comprises the following steps of: seeding a predetermined number of cells in a culture device containing a first culture medium and culturing the predetermined number of cells for a predetermined time to form a cell planar structure; placing a mold in the culture device to cover at least an outer portion of the cell planar structure; adding a gel into the culture device with the mold to envelop the cell planar structure; and separating the gel and the cell planar structure enveloped therein from the culture device and the mold to form the lamellar cell product.

Abstract: A projection system includes a control module, a projection tube, an aiming driver, an observation device and an observation driver. The control module is configured to issue a first control command and a second control command. The aiming driver is electrically connected to the projection tube and configured to control, in response to the first control command, a projection viewing-line of the projection tube to be aligned with a calibration point. The observation driver is electrically connected to the observation device and configured to control, in response to the second control command, an observation viewing-line of the observation device to be aligned with the calibration point. The projection tube and the observation device are controlled asynchronously.

Abstract: A target tracking system includes an observation module, a dynamic tracking module, a control module and an aiming module. The observation module captures an observation frame including a tracked-object image of a tracked-object and an aiming point image and detects a distance between the observation module and the tracked-object. The dynamic tracking module analyzes the observation frame to obtain a lag correction vector between the aiming point image and the tracked-object image, and obtains a feed-forward correction vector according to the lag correction vector and the distance. The control module generates a control command representing the lag correction vector and a control command representing the feed-forward correction vector. The aiming module moves according to the control commands to control the aiming point image to align with the tracked-object image and control the aiming point image to lead the tracked-object image.

Abstract: A projection system includes a control module, a projection tube, an aiming driver, an observation device and an observation driver. The control module is configured to issue a first control command and a second control command. The aiming driver is electrically connected to the projection tube and configured to control, in response to the first control command, a projection viewing-line of the projection tube to be aligned with a calibration point. The observation driver is electrically connected to the observation device and configured to control, in response to the second control command, an observation viewing-line of the observation device to be aligned with the calibration point. The projection tube and the observation device are controlled asynchronously.

Abstract: A target tracking system includes an observation module, a dynamic tracking module, a control module and an aiming module. The observation module captures an observation frame including a tracked-object image of a tracked-object and an aiming point image and detects a distance between the observation module and the tracked-object. The dynamic tracking module analyzes the observation frame to obtain a lag correction vector between the aiming point image and the tracked-object image, and obtains a feed-forward correction vector according to the lag correction vector and the distance. The control module generates a control command representing the lag correction vector and a control command representing the feed-forward correction vector. The aiming module moves according to the control commands to control the aiming point image to align with the tracked-object image and control the aiming point image to lead the tracked-object image.

Abstract: Embodiments of the present disclosure relates to a wet bench processing including an in-situ pre-treatment prior to performing the first set of wet bench operations. The pre-treatment may include a pre-clean operation and/or a pre-heat operation. The pre-treatment may be performed in one of the existing ONB tanks without requiring adding new tanks to an existing wet bench tool. The pre-clean operation removes particles from a batch of wafers to avoid or reduce cross-contamination and defect issues, thus improving the yield rate of the wet bench process. The pre-heat operation provides better control and stabilize the temperature in the CHB tank to stabilize the process, such as to stabilize an etch rate.

Abstract: A projection system includes a control module, a projection tube, an aiming driver, an observation device and an observation driver. The control module is configured to issue a first control command and a second control command. The aiming driver is electrically connected to the projection tube and configured to control, in response to the first control command, a projection viewing-line of the projection tube to be aligned with a calibration point. The observation driver is electrically connected to the observation device and configured to control, in response to the second control command, an observation viewing-line of the observation device to be aligned with the calibration point. The projection tube and the observation device are controlled asynchronously.

Abstract: A method of forming a semiconductor device includes soaking a batch of wafers in a first cleaning liquid, replacing the first cleaning liquid with a second cleaning liquid, soaking the batch of wafers in the second cleaning liquid, and soaking the batch of wafers in an etchant. The first cleaning liquid has a first temperature. The second cleaning liquid has a second temperature. The etchant has a third temperature. The second temperature is between the first temperature and the third temperature.

Abstract: The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate having a first type of dopant; a semiconductor layer having a second type of dopant different from the first type of dopant and disposed on the semiconductor substrate; a photo-sensitive structure formed in the semiconductor layer; a multi-layer interconnect (MLI) structure disposed on the semiconductor layer; a color filter disposed on the MLI structure and disposed above the photo-sensitive structure; and a microlens disposed over the color filter and disposed above the photo-sensitive structure.

Abstract: A rechargeable battery includes power storage modules, a charging module and a control module. The charging module is electrically connected to the power storage modules. The control module is electrically connected to the power storage modules. The charging module is configured to selectively charge the power storage modules through a plurality of charging paths. Each power storage module corresponds to one of the charging paths. The control module is configured to command the charging module to charge at least one of the power storage modules according to the SoC of each power storage module.

Abstract: The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate having a first type of dopant; a semiconductor layer having a second type of dopant different from the first type of dopant and disposed on the semiconductor substrate; a photo-sensitive structure formed in the semiconductor layer; a multi-layer interconnect (MLI) structure disposed on the semiconductor layer; a color filter disposed on the MLI structure and disposed above the photo-sensitive structure; and a microlens disposed over the color filter and disposed above the photo-sensitive structure.

Abstract: The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate having a first type of dopant; a semiconductor layer having a second type of dopant different from the first type of dopant and disposed on the semiconductor substrate; and an image sensor formed in the semiconductor layer.

Abstract: A pixel circuit includes: a photodetector, a signal adjustment circuit and a switch circuit. The photodetector is employed for generating an output signal in response to light that is incident thereon. The signal adjustment circuit is coupled to the photodetector, and employed for selectively adjusting the output signal to allow the output signal to have a plurality of different logarithmic functions in respect to an intensity of the light. The switch circuit is coupled to the signal adjustment circuit and the photodetector, and employed for coupling the photodetector to the signal adjustment circuit.

Abstract: An image sensor includes an M-shared pixel architecture, an N-shared pixel architecture and a switch unit, wherein M is an integer not smaller than two and N is an integer not smaller than two. The switch unit is coupled between a floating diffusion node of the M-shared pixel architecture and a floating diffusion node of the N-shared pixel architecture.

Abstract: A shared active pixel sensor includes a first shared photodiode, a first shared sense node, a first transfer gate, a first shared reset gate and a first shared source follower gate. The first shared photodiode consists of a first signal node and a second signal node. The first shared sense node is electrically connected to the first shared photodiode. The first transfer gate is disposed between the first signal node and the first shared sense node so that the first signal node and the first shared sense node together serve as a source and a drain controlled by the first transfer gate. The first shared reset gate is electrically connected to the first shared sense node. The first shared source follower gate is capable of reading a photocurrent from the first shared photodiode.

Abstract: A semiconductor structure for suppressing hot clusters includes a substrate of a first dopant concentration, an epitaxial layer having a second dopant concentration smaller than the first dopant concentration and directly disposed on the substrate, a dopant gradient region disposed in the epitaxial layer and having a gradient decreasing from the substrate to the epitaxial layer, a shallow trench isolation disposed between a first element region and a second element region, and a shallow trench doping region surrounding the shallow trench isolation and near the dopant gradient region to suppress a hot cluster formed by the first element region to jeopardize the second element region.

Abstract: A shared active pixel sensor with a shared photodiode, a shared sense node, a transfer gate, a shared reset gate and a shared source follower gate is disclosed. A shared photodiode includes at least a first signal node and a second signal node. A shared sense node electrically connected to the shared photodiode. A transfer gate disposed between the first signal node and the shared sense node to control the first signal node and the shared sense node. A shared reset gate is electrically connected to the shared sense node and a shared source follower gate reads a photocurrent from the shared photodiode.

Abstract: An image sensor is provided in the present invention, including a plurality of optical elements, wherein each optical element includes a semiconductor substrate, a dielectric layer and a color filter set. The semiconductor substrate includes a plurality of photosensitive units. The dielectric layer is disposed above the semiconductor substrate and includes a plurality of notches. The color filter set is disposed above the dielectric layer and includes a plurality of filter units and a plurality of convex substances corresponding to the filter units, and the convex substances and the notches are engaged with each other, wherein the convex substances and the notches change in accordance with the distance to the center of the image sensor.

Abstract: A shared active pixel sensor includes a first shared photodiode, a first shared sense node, a first transfer gate, a first shared reset gate and a first shared source follower gate. The first shared photodiode consists of a first signal node and a second signal node. The first shared sense node is electrically connected to the first shared photodiode. The first transfer gate is disposed between the first signal node and the first shared sense node so that the first signal node and the first shared sense node together serve as a source and a drain controlled by the first transfer gate. The first shared reset gate is electrically connected to the first shared sense node. The first shared source follower gate is capable of reading a photocurrent from the first shared photodiode.