Patents by Inventor Chung-Wei Chang
Chung-Wei Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11964881Abstract: A method for making iridium oxide nanoparticles includes dissolving an iridium salt to obtain a salt-containing solution, mixing a complexing agent with the salt-containing solution to obtain a blend solution, and adding an oxidating agent to the blend solution to obtain a product mixture. A molar ratio of a complexing compound of the complexing agent to the iridium salt is controlled in a predetermined range so as to permit the product mixture to include iridium oxide nanoparticles.Type: GrantFiled: July 27, 2020Date of Patent: April 23, 2024Assignee: NATIONAL YANG MING CHIAO TUNG UNIVERSITYInventors: Pu-Wei Wu, Yi-Chieh Hsieh, Han-Yi Wang, Kuang-Chih Tso, Tzu-Ying Chan, Chung-Kai Chang, Chi-Shih Chen, Yu-Ting Cheng
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Publication number: 20240126002Abstract: A backlight module includes a light source, a first prism sheet disposed on the light source, and a light type adjustment sheet disposed on a side of the first prism sheet away from the light source and including a base and multiple light type adjustment structures. The multiple light type adjustment structures are disposed on the first surface of the base. Each light type adjustment structure has a first structure surface and a second structure surface connected to each other. The first structure surface of each light type adjustment structure and the first surface of the base form a first base angle therebetween, and the second structure surface of each light type adjustment structure and the first surface of the base form a second base angle therebetween. The angle of the first base angle is different from the angle of the second base angle.Type: ApplicationFiled: October 2, 2023Publication date: April 18, 2024Applicant: Coretronic CorporationInventors: Chih-Jen Tsang, Chung-Wei Huang, Shih-Yen Cheng, Jung-Wei Chang, Han-Yuan Liu, Chun-Wei Lee
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Publication number: 20240100880Abstract: A multi-piece wheel frame includes a rim and a disc. The rim includes a barrel, and an outer rim portion protruding outwardly from the barrel. The outer rim portion forms an inclined surface, and a ring edge surface connected to an outer edge of the inclined surface and cooperating with the inclined surface to form an obtuse angle. The disc is fixed to the rim, and includes a disc core, a plurality of spoke portions extending radially outwardly from the disc core, and a reinforced ring portion connected to the spoke portions and fixed to the outer rim portion. The reinforced ring portion abuts against at least one of the inclined surface and the ring edge surface.Type: ApplicationFiled: November 16, 2022Publication date: March 28, 2024Inventors: Te-Fu HSIAO, Che-Hao KUO, Chung-Hsin CHANG, Chia-Hsin WANG, Erh-Wei LIU
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Patent number: 11927303Abstract: A wearable device includes a host, a first belt, a second belt, a circuit board, a cable, and an adjustment mechanism. The first belt, one end of which is connected to a first side of the host, has a cable holding part. One end of the second belt is connected to a second side of the host. The circuit board is disposed at an overlap of the first belt and the second belt. A first end and a second end opposite to each other of the cable are connected to the circuit board and the first side respectively, and a holding section of the cable is fixed to the cable holding part. The adjusting mechanism is disposed at an overlap of the first belt and the second belt to adjust an overlapping length of the first belt and the second belt.Type: GrantFiled: July 25, 2022Date of Patent: March 12, 2024Assignee: HTC CorporationInventors: Tsen-Wei Kung, Chung-Ju Wu, Tsung Hua Yang, Chih-Yao Chang, Wei Te Tu
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Publication number: 20230369056Abstract: Embodiments of the present disclosure relates to a wet bench processing including an in-situ pre-treatment prior to performing the first set of wet bench operations. The pre-treatment may include a pre-clean operation and/or a pre-heat operation. The pre-treatment may be performed in one of the existing ONB tanks without requiring adding new tanks to an existing wet bench tool. The pre-clean operation removes particles from a batch of wafers to avoid or reduce cross-contamination and defect issues, thus improving the yield rate of the wet bench process. The pre-heat operation provides better control and stabilize the temperature in the CHB tank to stabilize the process, such as to stabilize an etch rate.Type: ApplicationFiled: May 12, 2022Publication date: November 16, 2023Inventors: Chung-Wei CHANG, Bo-Wei CHOU, Chin-Ming LIN, Ping-Jung HUANG, Pi-Chun YU, Bi-Ming YEN, Peng SHEN
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Publication number: 20230072172Abstract: A projection system includes a control module, a projection tube, an aiming driver, an observation device and an observation driver. The control module is configured to issue a first control command and a second control command. The aiming driver is electrically connected to the projection tube and configured to control, in response to the first control command, a projection viewing-line of the projection tube to be aligned with a calibration point. The observation driver is electrically connected to the observation device and configured to control, in response to the second control command, an observation viewing-line of the observation device to be aligned with the calibration point. The projection tube and the observation device are controlled asynchronously.Type: ApplicationFiled: December 2, 2021Publication date: March 9, 2023Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Chung-Wei CHANG, Yi-Ling LEE, Peng-Yu CHEN, Fang-Ming LEE
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Publication number: 20230062572Abstract: A method of forming a semiconductor device includes soaking a batch of wafers in a first cleaning liquid, replacing the first cleaning liquid with a second cleaning liquid, soaking the batch of wafers in the second cleaning liquid, and soaking the batch of wafers in an etchant. The first cleaning liquid has a first temperature. The second cleaning liquid has a second temperature. The etchant has a third temperature. The second temperature is between the first temperature and the third temperature.Type: ApplicationFiled: August 30, 2021Publication date: March 2, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chung-Wei CHANG, Chin-Ming LIN, Peng SHEN, Bo-Wei CHOU, Ping-Jung HUANG
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Patent number: 9837458Abstract: The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate having a first type of dopant; a semiconductor layer having a second type of dopant different from the first type of dopant and disposed on the semiconductor substrate; a photo-sensitive structure formed in the semiconductor layer; a multi-layer interconnect (MLI) structure disposed on the semiconductor layer; a color filter disposed on the MLI structure and disposed above the photo-sensitive structure; and a microlens disposed over the color filter and disposed above the photo-sensitive structure.Type: GrantFiled: October 17, 2016Date of Patent: December 5, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chung-Wei Chang, Han-Chi Liu, Chun-Yao Ko, Shou-Gwo Wuu
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Publication number: 20170346309Abstract: A rechargeable battery includes power storage modules, a charging module and a control module. The charging module is electrically connected to the power storage modules. The control module is electrically connected to the power storage modules. The charging module is configured to selectively charge the power storage modules through a plurality of charging paths. Each power storage module corresponds to one of the charging paths. The control module is configured to command the charging module to charge at least one of the power storage modules according to the SoC of each power storage module.Type: ApplicationFiled: August 17, 2016Publication date: November 30, 2017Applicant: MSI COMPUTER (SHENZHEN) CO.,LTD.Inventors: Yu-Szu LEE, Ching-Yu HO, Chung-Wei CHANG, Chia-Hua TSAI
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Publication number: 20170033138Abstract: The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate having a first type of dopant; a semiconductor layer having a second type of dopant different from the first type of dopant and disposed on the semiconductor substrate; a photo-sensitive structure formed in the semiconductor layer; a multi-layer interconnect (MLI) structure disposed on the semiconductor layer; a color filter disposed on the MLI structure and disposed above the photo-sensitive structure; and a microlens disposed over the color filter and disposed above the photo-sensitive structure.Type: ApplicationFiled: October 17, 2016Publication date: February 2, 2017Inventors: Chung-Wei Chang, Han-Chi Liu, Chun-Yao Ko, Shou-Gwo Wuu
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Patent number: 9496302Abstract: The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate having a first type of dopant; a semiconductor layer having a second type of dopant different from the first type of dopant and disposed on the semiconductor substrate; and an image sensor formed in the semiconductor layer.Type: GrantFiled: February 20, 2014Date of Patent: November 15, 2016Assignee: Taiwan Semiconductor Manufacturing Company Ltd.Inventors: Chung-Wei Chang, Han-Chi Liu, Chun-Yao Ko, Shou-Gwo Wuu
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Patent number: 9466635Abstract: A pixel circuit includes: a photodetector, a signal adjustment circuit and a switch circuit. The photodetector is employed for generating an output signal in response to light that is incident thereon. The signal adjustment circuit is coupled to the photodetector, and employed for selectively adjusting the output signal to allow the output signal to have a plurality of different logarithmic functions in respect to an intensity of the light. The switch circuit is coupled to the signal adjustment circuit and the photodetector, and employed for coupling the photodetector to the signal adjustment circuit.Type: GrantFiled: March 13, 2014Date of Patent: October 11, 2016Assignee: Himax Imaging LimitedInventors: Dong-Long Lin, Chung-Ren Li, Chung-Wei Chang
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Patent number: 9467637Abstract: An image sensor includes an M-shared pixel architecture, an N-shared pixel architecture and a switch unit, wherein M is an integer not smaller than two and N is an integer not smaller than two. The switch unit is coupled between a floating diffusion node of the M-shared pixel architecture and a floating diffusion node of the N-shared pixel architecture.Type: GrantFiled: March 17, 2014Date of Patent: October 11, 2016Assignee: Himax Imaging LimitedInventors: Dong-Long Lin, Chung-Ren Li, Chung-Wei Chang
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Patent number: 9443890Abstract: A shared active pixel sensor includes a first shared photodiode, a first shared sense node, a first transfer gate, a first shared reset gate and a first shared source follower gate. The first shared photodiode consists of a first signal node and a second signal node. The first shared sense node is electrically connected to the first shared photodiode. The first transfer gate is disposed between the first signal node and the first shared sense node so that the first signal node and the first shared sense node together serve as a source and a drain controlled by the first transfer gate. The first shared reset gate is electrically connected to the first shared sense node. The first shared source follower gate is capable of reading a photocurrent from the first shared photodiode.Type: GrantFiled: May 19, 2015Date of Patent: September 13, 2016Assignee: Himax Imaging LimitedInventors: Dong-Long Lin, Chung-Ren Li, Chung-Wei Chang
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Patent number: 9437649Abstract: A semiconductor structure for suppressing hot clusters includes a substrate of a first dopant concentration, an epitaxial layer having a second dopant concentration smaller than the first dopant concentration and directly disposed on the substrate, a dopant gradient region disposed in the epitaxial layer and having a gradient decreasing from the substrate to the epitaxial layer, a shallow trench isolation disposed between a first element region and a second element region, and a shallow trench doping region surrounding the shallow trench isolation and near the dopant gradient region to suppress a hot cluster formed by the first element region to jeopardize the second element region.Type: GrantFiled: March 3, 2014Date of Patent: September 6, 2016Assignee: Himax Imaging, Inc.Inventors: Yang Wu, Feixia Yu, Chung-Wei Chang
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Patent number: 9190435Abstract: A shared active pixel sensor with a shared photodiode, a shared sense node, a transfer gate, a shared reset gate and a shared source follower gate is disclosed. A shared photodiode includes at least a first signal node and a second signal node. A shared sense node electrically connected to the shared photodiode. A transfer gate disposed between the first signal node and the shared sense node to control the first signal node and the shared sense node. A shared reset gate is electrically connected to the shared sense node and a shared source follower gate reads a photocurrent from the shared photodiode.Type: GrantFiled: March 9, 2014Date of Patent: November 17, 2015Assignee: Himax Imaging LimitedInventors: Dong-Long Lin, Chung-Ren Li, Chung-Wei Chang
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Patent number: 9160911Abstract: An image sensor is provided in the present invention, including a plurality of optical elements, wherein each optical element includes a semiconductor substrate, a dielectric layer and a color filter set. The semiconductor substrate includes a plurality of photosensitive units. The dielectric layer is disposed above the semiconductor substrate and includes a plurality of notches. The color filter set is disposed above the dielectric layer and includes a plurality of filter units and a plurality of convex substances corresponding to the filter units, and the convex substances and the notches are engaged with each other, wherein the convex substances and the notches change in accordance with the distance to the center of the image sensor.Type: GrantFiled: March 13, 2014Date of Patent: October 13, 2015Assignee: Himax Imaging LimitedInventors: Yu-Tsung Lin, Chung-Wei Chang, Dong-Long Lin
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Publication number: 20150255497Abstract: A shared active pixel sensor with a shared photodiode, a shared sense node, a transfer gate, a shared reset gate and a shared source follower gate is disclosed. A shared photodiode includes at least a first signal node and a second signal node. A shared sense node electrically connected to the shared photodiode. A transfer gate disposed between the first signal node and the shared sense node to control the first signal node and the shared sense node. A shared reset gate is electrically connected to the shared sense node and a shared source follower gate reads a photocurrent from the shared photodiode.Type: ApplicationFiled: March 9, 2014Publication date: September 10, 2015Applicant: Himax Imaging LimitedInventors: Dong-Long Lin, Chung-Ren Li, Chung-Wei Chang
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Publication number: 20150256780Abstract: A shared active pixel sensor includes a first shared photodiode, a first shared sense node, a first transfer gate, a first shared reset gate and a first shared source follower gate. The first shared photodiode consists of a first signal node and a second signal node. The first shared sense node is electrically connected to the first shared photodiode. The first transfer gate is disposed between the first signal node and the first shared sense node so that the first signal node and the first shared sense node together serve as a source and a drain controlled by the first transfer gate. The first shared reset gate is electrically connected to the first shared sense node. The first shared source follower gate is capable of reading a photocurrent from the first shared photodiode.Type: ApplicationFiled: May 19, 2015Publication date: September 10, 2015Inventors: Dong-Long Lin, Chung-Ren Li, Chung-Wei Chang
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Publication number: 20150200217Abstract: A pixel circuit includes: a photodetector, a signal adjustment circuit and a switch circuit. The photodetector is employed for generating an output signal in response to light that is incident thereon. The signal adjustment circuit is coupled to the photodetector, and employed for selectively adjusting the output signal to allow the output signal to have a plurality of different logarithmic functions in respect to an intensity of the light. The switch circuit is coupled to the signal adjustment circuit and the photodetector, and employed for coupling the photodetector to the signal adjustment circuit.Type: ApplicationFiled: March 13, 2014Publication date: July 16, 2015Applicant: Himax Imaging LimitedInventors: Dong-Long Lin, Chung-Ren Li, Chung-Wei Chang