Patents by Inventor Chung-Wei Chang
Chung-Wei Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20150200217Abstract: A pixel circuit includes: a photodetector, a signal adjustment circuit and a switch circuit. The photodetector is employed for generating an output signal in response to light that is incident thereon. The signal adjustment circuit is coupled to the photodetector, and employed for selectively adjusting the output signal to allow the output signal to have a plurality of different logarithmic functions in respect to an intensity of the light. The switch circuit is coupled to the signal adjustment circuit and the photodetector, and employed for coupling the photodetector to the signal adjustment circuit.Type: ApplicationFiled: March 13, 2014Publication date: July 16, 2015Applicant: Himax Imaging LimitedInventors: Dong-Long Lin, Chung-Ren Li, Chung-Wei Chang
-
Publication number: 20150181142Abstract: An image sensor includes an M-shared pixel architecture, an N-shared pixel architecture and a switch unit, wherein M is an integer not smaller than two and N is an integer not smaller than two. The switch unit is coupled between a floating diffusion node of the M-shared pixel architecture and a floating diffusion node of the N-shared pixel architecture.Type: ApplicationFiled: March 17, 2014Publication date: June 25, 2015Applicant: Himax Imaging LimitedInventors: Dong-Long Lin, Chung-Ren Li, Chung-Wei Chang
-
Publication number: 20150070552Abstract: An image sensor is provided in the present invention, including a plurality of optical elements, wherein each optical element includes a semiconductor substrate, a dielectric layer and a color filter set. The semiconductor substrate includes a plurality of photosensitive units. The dielectric layer is disposed above the semiconductor substrate and includes a plurality of notches. The color filter set is disposed above the dielectric layer and includes a plurality of filter units and a plurality of convex substances corresponding to the filter units, and the convex substances and the notches are engaged with each other, wherein the convex substances and the notches change in accordance with the distance to the center of the image sensor.Type: ApplicationFiled: March 13, 2014Publication date: March 12, 2015Applicant: Himax Imaging LimitedInventors: Yu-Tsung Lin, Chung-Wei Chang, Dong-Long Lin
-
Publication number: 20140246713Abstract: A semiconductor structure for suppressing hot clusters includes a substrate of a first dopant concentration, an epitaxial layer having a second dopant concentration smaller than the first dopant concentration and directly disposed on the substrate, a dopant gradient region disposed in the epitaxial layer and having a gradient decreasing from the substrate to the epitaxial layer, a shallow trench isolation disposed between a first element region and a second element region, and a shallow trench doping region surrounding the shallow trench isolation and near the dopant gradient region to suppress a hot cluster formed by the first element region to jeopardize the second element region.Type: ApplicationFiled: March 3, 2014Publication date: September 4, 2014Applicant: Himax Imaging, Inc.Inventors: Yang Wu, Feixia Yu, Chung-Wei Chang
-
Publication number: 20140167118Abstract: The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate having a first type of dopant; a semiconductor layer having a second type of dopant different from the first type of dopant and disposed on the semiconductor substrate; and an image sensor formed in the semiconductor layer.Type: ApplicationFiled: February 20, 2014Publication date: June 19, 2014Applicant: Taiwan Semiconductor Manufacturing Company Ltd.Inventors: Chung-Wei Chang, Han-Chi Liu, Chun-Yao Ko, Shou-Gwo Wuu
-
Patent number: 8692304Abstract: An image sensor includes: a substrate, at least a pixel, and at least a light shield is provided. Wherein the pixel includes a photodiode and at least a transistor, and the transistor is connected to a metal line via a contact. The light shield is positioned around at least one side of the pixel, wherein the light shield is made while forming the contact.Type: GrantFiled: August 3, 2010Date of Patent: April 8, 2014Assignee: Himax Imaging, Inc.Inventors: Fang-Ming Huang, Chung-Wei Chang, Ping-Hung Yin
-
Patent number: 8669133Abstract: The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate having a first type of dopant; a semiconductor layer having a second type of dopant different from the first type of dopant and disposed on the semiconductor substrate; and an image sensor formed in the semiconductor layer.Type: GrantFiled: May 14, 2010Date of Patent: March 11, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chung-Wei Chang, Han-Chi Liu, Chun-Yao Ko, Shou-Gwo Wuu
-
Patent number: 8431975Abstract: A back side illumination (BSI) image sensor includes at least one pixel. The pixel area includes a photo diode and a transfer transistor. The transfer transistor has a control electrode made of a gate poly and a gate oxide for receiving a control instruction, a first electrode coupled to the photo diode, and a second electrode, wherein an induced conduction channel of the transfer transistor partially surrounds a recessed space which is filled with the gate poly and the gate oxide of the transfer transistor.Type: GrantFiled: January 31, 2011Date of Patent: April 30, 2013Assignee: Himax Imaging, Inc.Inventors: Chih-Wei Hsiung, Fang-Ming Huang, Chung-Wei Chang
-
Patent number: 8368160Abstract: An image sensing device is disclosed, including an epitaxy layer having the a conductivity type, including a first pixel area corresponding to a first incident light, a second pixel area corresponding to a second incident light, and a third pixel area corresponding to a third incident light, wherein the wavelength of the first incident light is longer than that of the second incident light and the wavelength of the second incident light is longer than that of the third incident light. A photodiode is disposed in an upper portion of the epitaxy layer, and a first deep well for reducing pixel-to-pixel talk of the image sensing device is disposed in a lower portion of the epitaxy layer in the second pixel area and the third pixel area, wherein at least a portion of the epitaxy layer in first pixel area does not include the first deep well.Type: GrantFiled: October 5, 2010Date of Patent: February 5, 2013Assignee: Himax Imaging, Inc.Inventors: Chung-Wei Chang, Fang-Ming Huang, Chi-Shao Lin, Yu-Ping Hu
-
Patent number: 8368130Abstract: A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel area and a logic area, forming a light sensing element in the pixel area, and forming a first transistor in the pixel area and a second transistor in the logic area. The step of forming the first transistor in the pixel area and the second transistor in the logic area includes performing a first implant process in the pixel area and the logic area, performing a second implant process in the pixel area and the logic area, and performing a third implant process only in the logic area.Type: GrantFiled: December 14, 2010Date of Patent: February 5, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Yao Ko, Chung-Wei Chang, Han-Chi Liu, Shou-Gwo Wuu
-
Patent number: 8367455Abstract: A fabricating method of an image sensor includes the steps of: providing a substrate; forming sensing elements on the substrate; forming microlenses on the sensing elements; filling a stuffed material on the microlenses, and air regions are formed in the stuffed material; and forming optical filters on the stuffed material.Type: GrantFiled: May 30, 2010Date of Patent: February 5, 2013Assignee: Himax Imaging, Inc.Inventors: Yu-Ping Hu, Chih-Wei Hsiung, Fang-Ming Huang, Chia-Chi Huang, Chung-Wei Chang
-
Patent number: 8278132Abstract: The present invention provides an image sensor and a fabricating method thereof capable of approaching higher quantum efficiency and reducing cost. The method comprises: providing a substrate; forming a pixel region on a top surface of the substrate; forming an interlayer insulating layer and at least a metal line on the pixel region; forming an isolation carrier layer having a hole array therein on the interlayer insulating layer; grinding a lower surface of the substrate to reduce the thickness of the substrate; placing a plurality of conductors into the hole array to form a plurality of bumps on the isolation carrier layer.Type: GrantFiled: May 18, 2010Date of Patent: October 2, 2012Assignee: Himax Imaging, Inc.Inventors: Chih-Min Liu, Fang-Ming Huang, Ping-Hung Yin, Kuo-Chan Huang, Chung-Wei Chang
-
Publication number: 20120193691Abstract: A back side illumination (BSI) image sensor includes at least one pixel. The pixel area includes a photo diode and a transfer transistor. The transfer transistor has a control electrode made of a gate poly and a gate oxide for receiving a control instruction, a first electrode coupled to the photo diode, and a second electrode, wherein an induced conduction channel of the transfer transistor partially surrounds a recessed space which is filled with the gate poly and the gate oxide of the first transistor.Type: ApplicationFiled: January 31, 2011Publication date: August 2, 2012Inventors: Chih-Wei Hsiung, Fang-Ming Huang, Chung-Wei Chang
-
Patent number: 8164733Abstract: A liquid crystal display panel includes a first substrate, and a second substrate opposite to and facing the first substrate. The first substrate, having a repairing region and a display region defined thereon, includes at least one repairing wire arranged in the repairing region, and a passivation layer disposed over the repairing wire. The second substrate includes a common electrode, and at least one repairing protection pad formed thereon. The repairing protection pad, disposed on the surface of the common electrode and in the repairing region, faces the first substrate, and corresponds to the repairing wire.Type: GrantFiled: October 21, 2008Date of Patent: April 24, 2012Assignee: AU Optronics Corp.Inventor: Chung-Wei Chang
-
Publication number: 20120080766Abstract: An image sensing device is disclosed, including an epitaxy layer having the a conductivity type, including a first pixel area corresponding to a first incident light, a second pixel area corresponding to a second incident light, and a third pixel area corresponding to a third incident light, wherein the wavelength of the first incident light is longer than that of the second incident light and the wavelength of the second incident light is longer than that of the third incident light. A photodiode is disposed in an upper portion of the epitaxy layer, and a first deep well for reducing pixel-to-pixel talk of the image sensing device is disposed in a lower portion of the epitaxy layer in the second pixel area and the third pixel area, wherein at least a portion of the epitaxy layer in first pixel area does not include the first deep well.Type: ApplicationFiled: October 5, 2010Publication date: April 5, 2012Applicant: HIMAX IMAGING, INC.Inventors: Chung-Wei Chang, Fang-Ming Huang, Chi-Shao Lin, Yu-Ping Hu
-
Publication number: 20120032241Abstract: An image sensor includes: a substrate, at least a pixel, and at least a light shield is provided. Wherein the pixel includes a photodiode and at least a transistor, and the transistor is connected to a metal line via a contact. The light shield is positioned around at least one side of the pixel, wherein the light shield is made while forming the contact.Type: ApplicationFiled: August 3, 2010Publication date: February 9, 2012Inventors: Fang-Ming Huang, Chung-Wei Chang, Ping-Hung Yin
-
Publication number: 20110291211Abstract: A fabricating method of an image sensor includes the steps of: providing a substrate; forming sensing elements on the substrate; forming microlenses on the sensing elements; filling a stuffed material on the microlenses, and air regions are formed in the stuffed material; and forming optical filters on the stuffed material.Type: ApplicationFiled: May 30, 2010Publication date: December 1, 2011Inventors: Yu-Ping Hu, Chih-Wei Hsiung, Fang-Ming Huang, Chia-Chi Huang, Chung-Wei Chang
-
Publication number: 20110284984Abstract: The present invention provides an image sensor and a fabricating method thereof capable of approaching higher quantum efficiency and reducing cost. The method comprises: providing a substrate; forming a pixel region on a top surface of the substrate; forming an interlayer insulating layer and at least a metal line on the pixel region; forming an isolation carrier layer having a hole array therein on the interlayer insulating layer; grinding a lower surface of the substrate to reduce the thickness of the substrate; placing a plurality of conductors into the hole array to form a plurality of bumps on the isolation carrier layer.Type: ApplicationFiled: May 18, 2010Publication date: November 24, 2011Inventors: Chih-Min Liu, Fang-Ming Huang, Ping-Hung Yin, Kuo-Chan Huang, Chung-Wei Chang
-
Publication number: 20110278687Abstract: A backside-illuminated sensor includes a substrate, at least one lens and at least one pixel structure. The substrate has a front surface and a backside surface, and the lens is formed on the backside surface of the substrate and the pixel structure is formed on a pixel area included in the front surface of the substrate, where a projected area of the pixel area on the backside surface in a thickness direction of the substrate is covered by the lens. The pixel structure includes a first power node for receiving a first supply voltage, a second power node for receiving a second supply voltage different from the first supply voltage, a sensing element and a capacitor for noise reduction. The sensing element generates a sensing signal according to an incident luminance from the lens.Type: ApplicationFiled: May 17, 2010Publication date: November 17, 2011Inventors: Fang-Ming Huang, Ping-Hung Yin, Chung-Wei Chang
-
Publication number: 20110133260Abstract: A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel area and a logic area, forming a light sensing element in the pixel area, and forming a first transistor in the pixel area and a second transistor in the logic area. The step of forming the first transistor in the pixel area and the second transistor in the logic area includes performing a first implant process in the pixel area and the logic area, performing a second implant process in the pixel area and the logic area, and performing a third implant process only in the logic area.Type: ApplicationFiled: December 14, 2010Publication date: June 9, 2011Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chun-Yao Ko, Chung-Wei Chang, Han-Chi Liu, Shou-Gwo Wuu