Patents by Inventor Chung Wei

Chung Wei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240126002
    Abstract: A backlight module includes a light source, a first prism sheet disposed on the light source, and a light type adjustment sheet disposed on a side of the first prism sheet away from the light source and including a base and multiple light type adjustment structures. The multiple light type adjustment structures are disposed on the first surface of the base. Each light type adjustment structure has a first structure surface and a second structure surface connected to each other. The first structure surface of each light type adjustment structure and the first surface of the base form a first base angle therebetween, and the second structure surface of each light type adjustment structure and the first surface of the base form a second base angle therebetween. The angle of the first base angle is different from the angle of the second base angle.
    Type: Application
    Filed: October 2, 2023
    Publication date: April 18, 2024
    Applicant: Coretronic Corporation
    Inventors: Chih-Jen Tsang, Chung-Wei Huang, Shih-Yen Cheng, Jung-Wei Chang, Han-Yuan Liu, Chun-Wei Lee
  • Patent number: 11961840
    Abstract: A semiconductor device structure is provided. The device includes one or more first semiconductor layers, each first semiconductor layer of the one or more first semiconductor layers is surrounded by a first intermixed layer, wherein the first intermixed layer comprises a first material and a second material.
    Type: Grant
    Filed: August 9, 2022
    Date of Patent: April 16, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Mao-Lin Huang, Lung-Kun Chu, Chung-Wei Hsu, Jia-Ni Yu, Kuo-Cheng Chiang, Kuan-Lun Cheng, Chih-Hao Wang
  • Publication number: 20240120018
    Abstract: A memory device, a failure bits detector, and a failure bits detection method thereof are provided. The failure bits detector includes a current generator, a current mirror, and a comparator. The current generator generates a first current according to a reference code. The current mirror mirrors the first current to generate a second current at a second end of the current mirror. The comparator compares a first voltage at a first input end with a second voltage at a second input end to generate a detection result.
    Type: Application
    Filed: October 5, 2022
    Publication date: April 11, 2024
    Applicant: MACRONIX International Co., Ltd.
    Inventors: Chung-Han Wu, Che-Wei Liang, Chih-He Chiang, Shang-Chi Yang
  • Publication number: 20240120402
    Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.
    Type: Application
    Filed: November 19, 2023
    Publication date: April 11, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Jia-Ni YU, Kuo-Cheng CHIANG, Mao-Lin HUANG, Lung-Kun CHU, Chung-Wei HSU, Chun-Fu LU, Chih-Hao WANG, Kuan-Lun CHENG
  • Patent number: 11955966
    Abstract: An analog input device including at least one mounting panel and a matrix of analog push button assemblies mounted thereon. Each analog push button assembly including an analog pressure sensor including a pressure reception arrangement having an optical sensing sub-arrangement configured to measure an amount of light varied according to a pressure sensed at the pressure reception arrangement and an output terminal for outputting an analog signal corresponding to the amount of light measured, and a plunger element configured to exert the pressure on the pressure reception arrangement. The analog input device may include a multiplexer including an input side coupled to the push button assemblies and an output side; an analog-to-digital converter coupled to the output side of the multiplexer; a processor coupled to the analog-to-digital converter and configured to output a data packet; and a communication interface configured to transmit the data packet to a host computing device.
    Type: Grant
    Filed: August 23, 2022
    Date of Patent: April 9, 2024
    Assignee: Razer (Asia-Pacific) Pte. Ltd.
    Inventors: Chung Wei Lee, Thuan Teck Tan, Wenliang Yang, Alvin Sim, Kok Kiong Low, Ling Duan, Christopher Mitchell
  • Patent number: 11951638
    Abstract: A method for determining a standard depth value of a marker includes obtaining a maximum depth value of the marker. A reference depth value of the marker is obtained based on a depth image of the marker, and a Z-axis coordinate value of the marker is obtained based on a color image of the marker. When the reference depth value and the Z-axis coordinate value are both less than the maximum depth value, and a difference between the reference depth value and the Z-axis coordinate value is not greater than 0, the depth reference value is set as the standard depth value of the marker; and when the difference is greater than 0, the Z-axis coordinate value is set as the standard depth value of the marker.
    Type: Grant
    Filed: December 29, 2020
    Date of Patent: April 9, 2024
    Assignee: Chiun Mai Communication Systems, Inc.
    Inventors: Tung-Chun Hsieh, Chung-Wei Wu, Chih-Wei Li, Chia-Yi Lin
  • Publication number: 20240113225
    Abstract: A semiconductor device includes a gate, a semiconductor structure, a gate insulating layer, a first source/drain feature and a second source/drain feature. The gate insulating layer is located between the gate and the semiconductor structure. The semiconductor structure includes at least one first metal oxide layer, a first oxide layer, and at least one second metal oxide layer. The first oxide layer is located between the first metal oxide layer and the second metal oxide layer. The first source/drain feature and the second source/drain feature are electrically connected with the semiconductor structure.
    Type: Application
    Filed: January 10, 2023
    Publication date: April 4, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wu-Wei Tsai, Yan-Yi Chen, Hai-Ching Chen, Yu-Ming Lin, Chung-Te Lin
  • Publication number: 20240113234
    Abstract: An integrated chip including a gate layer. An insulator layer is over the gate layer. A channel structure is over the insulator layer. A pair of source/drains are over the channel structure and laterally spaced apart by a dielectric layer. The channel structure includes a first channel layer between the insulator layer and the pair of source/drains, a second channel layer between the insulator layer and the dielectric layer, and a third channel layer between the second channel layer and the dielectric layer. The first channel layer, the second channel layer, and the third channel layer include different semiconductors.
    Type: Application
    Filed: January 4, 2023
    Publication date: April 4, 2024
    Inventors: Ya-Yun Cheng, Wen-Ling Lu, Yu-Chien Chiu, Chung-Wei Wu, Zhiqiang Wu
  • Publication number: 20240113195
    Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of first nanostructures formed over a substrate, and a dielectric wall adjacent to the first nanostructures. The semiconductor structure also includes a first liner layer between the first nanostructures and the dielectric wall, and the first liner layer is in direct contact with the dielectric wall. The semiconductor structure also includes a gate structure surrounding the first nanostructures, and the first liner layer is in direct contact with a portion of the gate structure.
    Type: Application
    Filed: February 22, 2023
    Publication date: April 4, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jia-Ni YU, Lung-Kun CHU, Chun-Fu LU, Chung-Wei HSU, Mao-Lin HUANG, Kuo-Cheng CHIANG, Chih-Hao WANG
  • Publication number: 20240113222
    Abstract: Some embodiments relate to a thin film transistor comprising an active layer over a substrate. An insulator is stacked with the active layer. A gate electrode structure is stacked with the insulator and includes a gate material layer having a first work function and a first interfacial layer. The first interfacial layer is directly between the insulator and the gate material layer, wherein the gate electrode structure has a second work function that is different from the first work function.
    Type: Application
    Filed: January 3, 2023
    Publication date: April 4, 2024
    Inventors: Yan-Yi Chen, Wu-Wei Tsai, Yu-Ming Hsiang, Hai-Ching Chen, Yu-Ming Lin, Chung-Te Lin
  • Patent number: 11946569
    Abstract: An actuating and sensing module is disclosed and includes a bottom plate, a gas pressure sensor, a thin gas transportation device and a cover plate. The bottom plate includes a pressure relief orifice, a discharging orifice and a communication orifice. The gas pressure sensor is disposed on the bottom plate and seals the communication orifice. The thin gas transportation device is disposed on the bottom plate and seals the pressure relief orifice and the discharging orifice. The cover plate is disposed on the bottom plate and covers the gas pressure sensor and the thin gas-transportation device. The cover plate includes an intake orifice. The thin gas transportation device is driven to inhale gas through the intake orifice, the gas is then discharged through the discharging orifice by the thin gas transportation device, and a pressure change of the gas is sensed by the gas pressure sensor.
    Type: Grant
    Filed: April 19, 2021
    Date of Patent: April 2, 2024
    Assignee: MICROJET TECHNOLOGY CO., LTD.
    Inventors: Hao-Jan Mou, Shih-Chang Chen, Jia-Yu Liao, Hung-Hsin Liao, Chung-Wei Kao, Chi-Feng Huang, Yung-Lung Han, Chang-Yen Tsai, Wei-Ming Lee
  • Patent number: 11949001
    Abstract: The present disclosure provides a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes channel members disposed over a substrate, a gate structure engaging the channel members, and an epitaxial feature adjacent the channel members. At least one of the channel members has an end portion in physical contact with an outer portion of the epitaxial feature. The end portion of the at least one of the channel members includes a first dopant of a first concentration. The outer portion of the epitaxial feature includes a second dopant of a second concentration. The first concentration is higher than the second concentration.
    Type: Grant
    Filed: March 21, 2022
    Date of Patent: April 2, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chih-Ching Wang, Chung-I Yang, Jon-Hsu Ho, Wen-Hsing Hsieh, Kuan-Lun Cheng, Chung-Wei Wu, Zhiqiang Wu
  • Patent number: 11948987
    Abstract: A semiconductor device according to the present disclosure includes a source feature and a drain feature, a plurality of semiconductor nanostructures extending between the source feature and the drain feature, a gate structure wrapping around each of the plurality of semiconductor nanostructures, a bottom dielectric layer over the gate structure and the drain feature, a backside power rail disposed over the bottom dielectric layer, and a backside source contact disposed between the source feature and the backside power rail. The backside source contact extends through the bottom dielectric layer.
    Type: Grant
    Filed: September 9, 2020
    Date of Patent: April 2, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Lung-Kun Chu, Mao-Lin Huang, Chung-Wei Hsu, Jia-Ni Yu, Kuo-Cheng Chiang, Kuan-Lun Cheng, Chih-Hao Wang
  • Publication number: 20240100880
    Abstract: A multi-piece wheel frame includes a rim and a disc. The rim includes a barrel, and an outer rim portion protruding outwardly from the barrel. The outer rim portion forms an inclined surface, and a ring edge surface connected to an outer edge of the inclined surface and cooperating with the inclined surface to form an obtuse angle. The disc is fixed to the rim, and includes a disc core, a plurality of spoke portions extending radially outwardly from the disc core, and a reinforced ring portion connected to the spoke portions and fixed to the outer rim portion. The reinforced ring portion abuts against at least one of the inclined surface and the ring edge surface.
    Type: Application
    Filed: November 16, 2022
    Publication date: March 28, 2024
    Inventors: Te-Fu HSIAO, Che-Hao KUO, Chung-Hsin CHANG, Chia-Hsin WANG, Erh-Wei LIU
  • Publication number: 20240107777
    Abstract: An SOT MRAM structure includes a word line. A second source/drain doping region and a fourth source/drain doping region are disposed at the same side of the word line. A first conductive line contacts the second source/drain doping region. A second conductive line contacts the fourth source/drain doping region. The second conductive line includes a third metal pad. A memory element contacts an end of the first conductive line. A second SOT element covers and contacts a top surface of the memory element. The third metal pad covers and contacts part of the top surface of the second SOT element.
    Type: Application
    Filed: October 13, 2022
    Publication date: March 28, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chih-Wei Kuo, Hung-Chan Lin, Chung-Yi Chiu
  • Publication number: 20240100352
    Abstract: A phototherapy device includes a base, at least one light conversion device and a light source module. The base has an installation slot. The light conversion device is detachably arranged in the installation slot. Each light conversion device includes a plurality of light conversion patterns. The light source module is arranged on a side of the base and configured to provide an excitation beam to the light conversion patterns, so that each of the light conversion patterns emits a converted beam. In this way, the light conversion device of the phototherapy device can be replaced according to the user's needs.
    Type: Application
    Filed: September 19, 2023
    Publication date: March 28, 2024
    Inventors: CHUNG-JEN OU, YU-MIN CHEN, MING-WEI TSAI, CHIEN-CHIH CHEN
  • Publication number: 20240103520
    Abstract: A method of controlling movement of an autonomous mobile apparatus including a driving module, a processor, and a positioning module includes steps of: the processor moving the autonomous mobile apparatus at a default speed from a first location toward a second location along a straight path; the positioning module obtaining data related to a current location; when the processor determines that a distance between the current location and the second location is greater than a predetermined distance, the processor obtaining a deviating direction and a minimum distance of the current location relative to the straight path; the processor setting a movement speed and an angular velocity based on the deviating direction, a tolerant distance, the minimum distance, and the default speed; and the processor controlling the driving apparatus to move the autonomous mobile apparatus at the movement speed and turning the autonomous mobile apparatus at the angular velocity.
    Type: Application
    Filed: September 21, 2023
    Publication date: March 28, 2024
    Inventors: Chien-Tung CHEN, Chung-Hou WU, Chao-Cheng CHEN, Wen-Wei CHIANG
  • Publication number: 20240107414
    Abstract: This disclosure provides systems, methods and apparatus, including computer programs encoded on computer storage media, for switching a secondary cell to a primary cell. A user equipment (UE) monitors a first radio condition of the UE for beams of a primary cell and a second radio condition for beams of one or more secondary cells configured for the UE in carrier aggregation. The UE transmits a request to configure a candidate beam of at least one candidate secondary cell as a new primary cell in response to the first radio condition not satisfying a first threshold and the second radio condition for the at least one candidate secondary cell satisfying a second threshold. A base station determines to reconfigure at least one secondary cell as the new primary cell. The base station and the UE perform a handover of the UE to the new primary cell.
    Type: Application
    Filed: September 23, 2022
    Publication date: March 28, 2024
    Inventors: Yu-Chieh HUANG, Kuhn-Chang LIN, Jen-Chun CHANG, Wen-Hsin HSIA, Chia-Jou LU, Sheng-Chih WANG, Chenghsin LIN, Yeong Leong CHOO, Chun-Hsiang CHIU, Chihhung HSIEH, Kai-Chun CHENG, Chung Wei LIN
  • Patent number: 11942464
    Abstract: In an embodiment, a method includes: aligning a first package component with a second package component, the first package component having a first region and a second region, the first region including a first conductive connector, the second region including a second conductive connector; performing a first laser shot on a first portion of a top surface of the first package component, the first laser shot reflowing the first conductive connector of the first region, the first portion of the top surface of the first package component completely overlapping the first region; and after performing the first laser shot, performing a second laser shot on a second portion of the top surface of the first package component, the second laser shot reflowing the second conductive connector of the second region, the second portion of the top surface of the first package component completely overlapping the second region.
    Type: Grant
    Filed: July 19, 2021
    Date of Patent: March 26, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hao-Jan Pei, Hsiu-Jen Lin, Wei-Yu Chen, Philip Yu-Shuan Chung, Chia-Shen Cheng, Kuei-Wei Huang, Ching-Hua Hsieh, Chung-Shi Liu, Chen-Hua Yu
  • Patent number: 11942364
    Abstract: In some embodiments, the present disclosure relates to a method of forming an interconnect. The method includes forming an etch stop layer (ESL) over a lower conductive structure and forming one or more dielectric layers over the ESL. A first patterning process is performed on the one or more dielectric layers to form interconnect opening and a second patterning process is performed on the one or more dielectric layers to increase a depth of the interconnect opening and expose an upper surface of the ESL. A protective layer is selectively formed on sidewalls of the one or more dielectric layers forming the interconnect opening. A third patterning process is performed to remove portions of the ESL that are uncovered by the one or more dielectric layers and the protective layer and to expose the lower conductive structure. A conductive material is formed within the interconnect opening.
    Type: Grant
    Filed: July 20, 2022
    Date of Patent: March 26, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsi-Wen Tien, Chung-Ju Lee, Chih Wei Lu, Hsin-Chieh Yao, Yu-Teng Dai, Wei-Hao Liao