Patents by Inventor Chung Wei

Chung Wei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240145632
    Abstract: A micro light emitting device includes an epitaxial structure, a conductive layer, and a first insulating layer. The epitaxial structure has a first surface and a second surface opposite to the first surface, and includes a first semiconductor layer, an active layer and a second semiconductor layer that are arranged in such order in a direction from the first surface to the second surface. The conductive layer is formed on a surface of the first semiconductor layer away from the active layer. The first insulating layer is formed on the surface of the first semiconductor layer away from the active layer, and exposes at least a part of the conductive layer.
    Type: Application
    Filed: October 23, 2023
    Publication date: May 2, 2024
    Inventors: Ming-Chun TSENG, Shaohua HUANG, Hongwei WANG, Kang-Wei PENG, Su-Hui LIN, Xiaomeng LI, Chi-Ming TSAI, Chung-Ying CHANG
  • Publication number: 20240131988
    Abstract: The present invention is related to a rear view mirror steering structure.
    Type: Application
    Filed: September 10, 2023
    Publication date: April 25, 2024
    Inventor: Chung-Wei Liang
  • Patent number: 11964881
    Abstract: A method for making iridium oxide nanoparticles includes dissolving an iridium salt to obtain a salt-containing solution, mixing a complexing agent with the salt-containing solution to obtain a blend solution, and adding an oxidating agent to the blend solution to obtain a product mixture. A molar ratio of a complexing compound of the complexing agent to the iridium salt is controlled in a predetermined range so as to permit the product mixture to include iridium oxide nanoparticles.
    Type: Grant
    Filed: July 27, 2020
    Date of Patent: April 23, 2024
    Assignee: NATIONAL YANG MING CHIAO TUNG UNIVERSITY
    Inventors: Pu-Wei Wu, Yi-Chieh Hsieh, Han-Yi Wang, Kuang-Chih Tso, Tzu-Ying Chan, Chung-Kai Chang, Chi-Shih Chen, Yu-Ting Cheng
  • Patent number: 11967611
    Abstract: A multilayer structure, a capacitor structure and an electronic device are provided. The multilayer structure includes a first dielectric layer, a second dielectric layer and an intermediate dielectric layer. The intermediate dielectric layer is disposed between the first dielectric layer and the second dielectric layer. A material of the intermediate dielectric layer is represented by a formula of AxB1-xO, wherein A includes hafnium (Hf), zirconium (Zr), lanthanum (La) or tantalum (Ta), B includes lanthanum (La), aluminum (Al) or tantalum (Ta), A is different from B, O is oxygen, and x is a number less than 1 and greater than 0.
    Type: Grant
    Filed: May 30, 2022
    Date of Patent: April 23, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Hai-Dang Trinh, Yi Yang Wei, Fa-Shen Jiang, Bi-Shen Lee, Hsun-Chung Kuang
  • Patent number: 11968840
    Abstract: A thin film transistor includes an active layer located over a substrate, a first gate stack including a stack of a first gate dielectric and a first gate electrode and located on a first surface of the active layer, a pair of first contact electrodes contacting peripheral portions of the first surface of the active layer and laterally spaced from each other along a first horizontal direction by the first gate electrode, a second contact electrode contacting a second surface of the active layer that is vertically spaced from the first surface of the active layer, and a pair of second gate stacks including a respective stack of a second gate dielectric and a second gate electrode and located on a respective peripheral portion of a second surface of the active layer.
    Type: Grant
    Filed: November 10, 2021
    Date of Patent: April 23, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Yong-Jie Wu, Yen-Chung Ho, Hui-Hsien Wei, Chia-Jung Yu, Pin-Cheng Hsu, Feng-Cheng Yang, Chung-Te Lin
  • Publication number: 20240128120
    Abstract: A package structure and a manufacturing method thereof are disclosed. The structure includes at least one semiconductor die, a redistribution layer disposed on the at least one semiconductor die, and connectors there-between. The connectors are disposed between the at least one semiconductor die and the redistribution layer, and electrically connect the at least one semiconductor die and the redistribution layer. The redistribution layer includes a dielectric layer with an opening and a metallic pattern layer disposed on the dielectric layer, and the metallic pattern layer includes a metallic via located inside the opening with a dielectric spacer surrounding the metallic via and located between the metallic via and the opening.
    Type: Application
    Filed: March 30, 2023
    Publication date: April 18, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsiang-Wei Liu, Chung-Kuang Lin
  • Publication number: 20240126002
    Abstract: A backlight module includes a light source, a first prism sheet disposed on the light source, and a light type adjustment sheet disposed on a side of the first prism sheet away from the light source and including a base and multiple light type adjustment structures. The multiple light type adjustment structures are disposed on the first surface of the base. Each light type adjustment structure has a first structure surface and a second structure surface connected to each other. The first structure surface of each light type adjustment structure and the first surface of the base form a first base angle therebetween, and the second structure surface of each light type adjustment structure and the first surface of the base form a second base angle therebetween. The angle of the first base angle is different from the angle of the second base angle.
    Type: Application
    Filed: October 2, 2023
    Publication date: April 18, 2024
    Applicant: Coretronic Corporation
    Inventors: Chih-Jen Tsang, Chung-Wei Huang, Shih-Yen Cheng, Jung-Wei Chang, Han-Yuan Liu, Chun-Wei Lee
  • Patent number: 11961840
    Abstract: A semiconductor device structure is provided. The device includes one or more first semiconductor layers, each first semiconductor layer of the one or more first semiconductor layers is surrounded by a first intermixed layer, wherein the first intermixed layer comprises a first material and a second material.
    Type: Grant
    Filed: August 9, 2022
    Date of Patent: April 16, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Mao-Lin Huang, Lung-Kun Chu, Chung-Wei Hsu, Jia-Ni Yu, Kuo-Cheng Chiang, Kuan-Lun Cheng, Chih-Hao Wang
  • Publication number: 20240120018
    Abstract: A memory device, a failure bits detector, and a failure bits detection method thereof are provided. The failure bits detector includes a current generator, a current mirror, and a comparator. The current generator generates a first current according to a reference code. The current mirror mirrors the first current to generate a second current at a second end of the current mirror. The comparator compares a first voltage at a first input end with a second voltage at a second input end to generate a detection result.
    Type: Application
    Filed: October 5, 2022
    Publication date: April 11, 2024
    Applicant: MACRONIX International Co., Ltd.
    Inventors: Chung-Han Wu, Che-Wei Liang, Chih-He Chiang, Shang-Chi Yang
  • Publication number: 20240120402
    Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.
    Type: Application
    Filed: November 19, 2023
    Publication date: April 11, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Jia-Ni YU, Kuo-Cheng CHIANG, Mao-Lin HUANG, Lung-Kun CHU, Chung-Wei HSU, Chun-Fu LU, Chih-Hao WANG, Kuan-Lun CHENG
  • Patent number: 11955966
    Abstract: An analog input device including at least one mounting panel and a matrix of analog push button assemblies mounted thereon. Each analog push button assembly including an analog pressure sensor including a pressure reception arrangement having an optical sensing sub-arrangement configured to measure an amount of light varied according to a pressure sensed at the pressure reception arrangement and an output terminal for outputting an analog signal corresponding to the amount of light measured, and a plunger element configured to exert the pressure on the pressure reception arrangement. The analog input device may include a multiplexer including an input side coupled to the push button assemblies and an output side; an analog-to-digital converter coupled to the output side of the multiplexer; a processor coupled to the analog-to-digital converter and configured to output a data packet; and a communication interface configured to transmit the data packet to a host computing device.
    Type: Grant
    Filed: August 23, 2022
    Date of Patent: April 9, 2024
    Assignee: Razer (Asia-Pacific) Pte. Ltd.
    Inventors: Chung Wei Lee, Thuan Teck Tan, Wenliang Yang, Alvin Sim, Kok Kiong Low, Ling Duan, Christopher Mitchell
  • Patent number: 11951638
    Abstract: A method for determining a standard depth value of a marker includes obtaining a maximum depth value of the marker. A reference depth value of the marker is obtained based on a depth image of the marker, and a Z-axis coordinate value of the marker is obtained based on a color image of the marker. When the reference depth value and the Z-axis coordinate value are both less than the maximum depth value, and a difference between the reference depth value and the Z-axis coordinate value is not greater than 0, the depth reference value is set as the standard depth value of the marker; and when the difference is greater than 0, the Z-axis coordinate value is set as the standard depth value of the marker.
    Type: Grant
    Filed: December 29, 2020
    Date of Patent: April 9, 2024
    Assignee: Chiun Mai Communication Systems, Inc.
    Inventors: Tung-Chun Hsieh, Chung-Wei Wu, Chih-Wei Li, Chia-Yi Lin
  • Publication number: 20240113225
    Abstract: A semiconductor device includes a gate, a semiconductor structure, a gate insulating layer, a first source/drain feature and a second source/drain feature. The gate insulating layer is located between the gate and the semiconductor structure. The semiconductor structure includes at least one first metal oxide layer, a first oxide layer, and at least one second metal oxide layer. The first oxide layer is located between the first metal oxide layer and the second metal oxide layer. The first source/drain feature and the second source/drain feature are electrically connected with the semiconductor structure.
    Type: Application
    Filed: January 10, 2023
    Publication date: April 4, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wu-Wei Tsai, Yan-Yi Chen, Hai-Ching Chen, Yu-Ming Lin, Chung-Te Lin
  • Publication number: 20240113234
    Abstract: An integrated chip including a gate layer. An insulator layer is over the gate layer. A channel structure is over the insulator layer. A pair of source/drains are over the channel structure and laterally spaced apart by a dielectric layer. The channel structure includes a first channel layer between the insulator layer and the pair of source/drains, a second channel layer between the insulator layer and the dielectric layer, and a third channel layer between the second channel layer and the dielectric layer. The first channel layer, the second channel layer, and the third channel layer include different semiconductors.
    Type: Application
    Filed: January 4, 2023
    Publication date: April 4, 2024
    Inventors: Ya-Yun Cheng, Wen-Ling Lu, Yu-Chien Chiu, Chung-Wei Wu, Zhiqiang Wu
  • Publication number: 20240113222
    Abstract: Some embodiments relate to a thin film transistor comprising an active layer over a substrate. An insulator is stacked with the active layer. A gate electrode structure is stacked with the insulator and includes a gate material layer having a first work function and a first interfacial layer. The first interfacial layer is directly between the insulator and the gate material layer, wherein the gate electrode structure has a second work function that is different from the first work function.
    Type: Application
    Filed: January 3, 2023
    Publication date: April 4, 2024
    Inventors: Yan-Yi Chen, Wu-Wei Tsai, Yu-Ming Hsiang, Hai-Ching Chen, Yu-Ming Lin, Chung-Te Lin
  • Publication number: 20240113195
    Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of first nanostructures formed over a substrate, and a dielectric wall adjacent to the first nanostructures. The semiconductor structure also includes a first liner layer between the first nanostructures and the dielectric wall, and the first liner layer is in direct contact with the dielectric wall. The semiconductor structure also includes a gate structure surrounding the first nanostructures, and the first liner layer is in direct contact with a portion of the gate structure.
    Type: Application
    Filed: February 22, 2023
    Publication date: April 4, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jia-Ni YU, Lung-Kun CHU, Chun-Fu LU, Chung-Wei HSU, Mao-Lin HUANG, Kuo-Cheng CHIANG, Chih-Hao WANG
  • Patent number: 11946569
    Abstract: An actuating and sensing module is disclosed and includes a bottom plate, a gas pressure sensor, a thin gas transportation device and a cover plate. The bottom plate includes a pressure relief orifice, a discharging orifice and a communication orifice. The gas pressure sensor is disposed on the bottom plate and seals the communication orifice. The thin gas transportation device is disposed on the bottom plate and seals the pressure relief orifice and the discharging orifice. The cover plate is disposed on the bottom plate and covers the gas pressure sensor and the thin gas-transportation device. The cover plate includes an intake orifice. The thin gas transportation device is driven to inhale gas through the intake orifice, the gas is then discharged through the discharging orifice by the thin gas transportation device, and a pressure change of the gas is sensed by the gas pressure sensor.
    Type: Grant
    Filed: April 19, 2021
    Date of Patent: April 2, 2024
    Assignee: MICROJET TECHNOLOGY CO., LTD.
    Inventors: Hao-Jan Mou, Shih-Chang Chen, Jia-Yu Liao, Hung-Hsin Liao, Chung-Wei Kao, Chi-Feng Huang, Yung-Lung Han, Chang-Yen Tsai, Wei-Ming Lee
  • Patent number: 11949001
    Abstract: The present disclosure provides a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes channel members disposed over a substrate, a gate structure engaging the channel members, and an epitaxial feature adjacent the channel members. At least one of the channel members has an end portion in physical contact with an outer portion of the epitaxial feature. The end portion of the at least one of the channel members includes a first dopant of a first concentration. The outer portion of the epitaxial feature includes a second dopant of a second concentration. The first concentration is higher than the second concentration.
    Type: Grant
    Filed: March 21, 2022
    Date of Patent: April 2, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chih-Ching Wang, Chung-I Yang, Jon-Hsu Ho, Wen-Hsing Hsieh, Kuan-Lun Cheng, Chung-Wei Wu, Zhiqiang Wu
  • Patent number: 11948987
    Abstract: A semiconductor device according to the present disclosure includes a source feature and a drain feature, a plurality of semiconductor nanostructures extending between the source feature and the drain feature, a gate structure wrapping around each of the plurality of semiconductor nanostructures, a bottom dielectric layer over the gate structure and the drain feature, a backside power rail disposed over the bottom dielectric layer, and a backside source contact disposed between the source feature and the backside power rail. The backside source contact extends through the bottom dielectric layer.
    Type: Grant
    Filed: September 9, 2020
    Date of Patent: April 2, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Lung-Kun Chu, Mao-Lin Huang, Chung-Wei Hsu, Jia-Ni Yu, Kuo-Cheng Chiang, Kuan-Lun Cheng, Chih-Hao Wang
  • Publication number: 20240100352
    Abstract: A phototherapy device includes a base, at least one light conversion device and a light source module. The base has an installation slot. The light conversion device is detachably arranged in the installation slot. Each light conversion device includes a plurality of light conversion patterns. The light source module is arranged on a side of the base and configured to provide an excitation beam to the light conversion patterns, so that each of the light conversion patterns emits a converted beam. In this way, the light conversion device of the phototherapy device can be replaced according to the user's needs.
    Type: Application
    Filed: September 19, 2023
    Publication date: March 28, 2024
    Inventors: CHUNG-JEN OU, YU-MIN CHEN, MING-WEI TSAI, CHIEN-CHIH CHEN