Abstract: An embodiment includes a process for treating an abdominal aortic aneurysm (AAA) endoleak with a shape memory polymer (SMP) foam device. First, a bifurcated stent graft is placed within the aneurysm while a micro guidewire is positioned within the aneurysm for future catheter access. Second, after placing the iliac graft extension, a catheter is introduced over wire to deliver embolic foams. Third, embolic foams expand and conform to the aneurysm wall. Fourth, embolic foams create a stable thrombus to prevent endoleak formation by isolating peripheral vessels from the aneurysm volume.

Abstract: A semiconductor device includes a substrate having a first conductivity type and an epitaxial layer disposed on the substrate. A first trench and a second trench are disposed in the epitaxial layer. A first body region and a second body region both having a second conductivity type are disposed in the epitaxial layer, and located on two sides of the first trench, respectively. A first source region and a second source region both having the first conductivity type are disposed on the first body region and the second body region, respectively. A first electrode is disposed in the first trench. A source contact structure includes a first portion disposed in the first trench and is electrically connected to the first source region and the second source region. A first gate is disposed in the second trench.

Abstract: An embodiment includes a process for treating an abdominal aortic aneurysm (AAA) endoleak with a shape memory polymer (SMP) foam device. First, a bifurcated stent graft is placed within the aneurysm while a micro guidewire is positioned within the aneurysm for future catheter access. Second, after placing the iliac graft extension, a catheter is introduced over wire to deliver embolic foams. Third, embolic foams expand and conform to the aneurysm wall. Fourth, embolic foams create a stable thrombus to prevent endoleak formation by isolating peripheral vessels from the aneurysm volume.

Abstract: A semiconductor device includes a substrate having a first conductivity type and including a cell region and a termination region. A trench is disposed in the substrate and located in the cell region, and a gate electrode disposed in the trench. A shielding doped region having a second conductivity type is disposed in the substrate and directly below the trench. A buried guard ring having the second conductivity type is disposed in the substrate and located in the termination region. The buried guard ring and the shielding doped region are disposed at the same depth in the substrate. In addition, a junction termination extension structure having the second conductivity type is disposed in the substrate, located directly above and separated from the buried guard ring.

Abstract: A semiconductor device includes a trench in a substrate, a gate electrode in the trench, a source contact region on a first surface of the substrate, a drain contact region on a second surface of the substrate, a heavily doped region directly below the trench, and a current spreading layer in the substrate to surround the bottom of the trench and the heavily doped region. The heavily doped region has a first conductivity type, and the width of the heavily doped region is smaller than the width of the trench in a first direction. The current spreading layer has a second conductivity type and a gradual doping concentration that is gradually increased along the first direction from the heavily doped region to the outside of the current spreading layer.

Abstract: An isolated power supplies converts an input power source in a primary side into an output power source in a secondary side, capable of transmitting a signal from the secondary side to the primary side via a transformer. The transformer has a primary winding connected with a main switch, and a secondary winding connected with a secondary-side switch. A primary-side controller controls the main switch. A secondary-side controller controls the secondary-side switch and detects a demagnetization time of the transformer. Before the end of the demagnetization time, the secondary-side controller turns OFF the secondary-side switch to signal, via the transformer, the primary-side controller, which in response turns ON the main switch to operate the isolated power supply in a continuous-conduction mode or in a boundary mode.

Abstract: A semiconductor structure including a substrate, an epitaxy layer, an electrode structure, a first sidewall doping region, a second sidewall doping region, and a bottom doping region is provided. The substrate has a first conductivity type. The epitaxy layer has a first conductivity type and is disposed on the substrate. The electrode structure is disposed in the epitaxy layer. The electrode structure extends along a first direction. The first sidewall doping region has the first conductivity type and is disposed on one side of the electrode structure. The second sidewall doping region has a second conductivity type different than the first conductivity type and is disposed on the other side of the electrode structure. The bottom doping region has the second conductivity type and is disposed under the electrode structure. The second sidewall doping region is connected to the bottom doping region.

Abstract: The present invention relates to compounds of formula (I) as activators of glucagon-like peptide 1 (GLP1) receptor for the treatment of obesity, type 2 diabetes mellitus, insulin resistance, hyperinsulinemia, glucose intolerance, hyperglycemia, one or more diabetic complications, diabetic nephropathy, dyslipidemia, non-alcoholic fatty liver disease (NAFLD), non-alcoholic steatohepatitis (NASH), hypertension, atherosclerosis, peripheral arterial disease, stroke, cardiomyopathy, atrial fibrillation, heart failure, coronary heart disease and neuropathy. Preferred compounds are e.g. 2-((4-((S)-2-(4-chloro-2-fluorophenyl)-2-methylbenzo[d][1,3]dioxol-4-yl)piperidin-1-yl)methyl)-1-(((S)-oxetan-2-yl)methyl)-1H-imidazole derivatives and similar compounds, such as e.g. C-1, C-2, C-3, C-4 and other compounds.

Abstract: A semiconductor device includes a substrate, an epitaxial layer on the substrate, a well region in the epitaxial layer, an insulating pillar extending into the epitaxial layer, a first doping region in the epitaxial layer and surrounding the insulating pillar, a second doping region under the first doping region, and a gate structure formed at one lateral side of the insulating pillar and extending into the epitaxial layer. The substrate and the epitaxial layer each have a first conductivity type. The well region and the first and second doping regions each have a second conductivity type. The gate structure is separated from the insulating pillar. The insulating pillar penetrates the first doping region by extending from the top portion to the bottom portion of the first doping region. The first doping region is electrically connected to the well region.

Abstract: A semiconductor device includes a substrate having a first conductivity type, an epitaxial layer formed on the substrate, a well region extending from a top surface of the epitaxial layer into the epitaxial layer, a drift region formed in the epitaxial layer and in contact with the bottom surface of the well region, a gate structure and a conductive structure. The epitaxial layer has the first conductivity type, the well region has the second conductivity type, and the drift region has the first conductivity type. The gate structure that extends from the top surface of the epitaxial layer penetrates the well region and is in contact with the drift region. The conductive structure is formed in the drift region and disposed below the gate structure. A gate electrode of the gate structure is separated from the underlying conductive structure by the gate dielectric layer of the gate structure.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, an epitaxy layer, a well region, a gate electrode, a conductive structure, and a source electrode. The substrate has a first conductive type. The epitaxy layer has the first conductive type and is disposed on the substrate. The well region has a second conductive type. The second conductive type is different than the first conductive type. The well region is disposed in the epitaxy layer. The gate electrode is disposed on the well region. The conductive structure includes an upper portion and a lower portion. The lower portion extends in the direction of the substrate into the epitaxy layer and the upper portion is disposed on the epitaxy layer. The source electrode is disposed on the conductive structure.

Abstract: An embodiment includes a process for treating an abdominal aortic aneurysm (AAA) endoleak with a shape memory polymer (SMP) foam device. First, a bifurcated stent graft is placed within the aneurysm while a micro guidewire is positioned within the aneurysm for future catheter access. Second, after placing the iliac graft extension, a catheter is introduced over wire to deliver embolic foams. Third, embolic foams expand and conform to the aneurysm wall. Fourth, embolic foams create a stable thrombus to prevent endoleak formation by isolating peripheral vessels from the aneurysm volume.

Abstract: A semiconductor structure includes a substrate, several gate structures formed in the substrate, dielectric portions formed on the respective gate structures, spacers adjacent to and extending along the sidewalls of the dielectric portions, source regions formed between the substrate and the spacers, and contact plugs formed between adjacent gate structures and contact the respective source regions. The source regions are adjacent to the gate structures. The sidewalls of the spacers are aligned with the sidewalls of the underlying source regions.

Abstract: A semiconductor device includes a substrate, a body region on the substrate, a source region on the body region, a first trench electrode passing through the source region, the body region and a portion of the substrate, a first dielectric cap layer, a first dielectric liner and a conductive layer. The first dielectric cap layer includes a first dielectric portion directly above the first trench electrode and first dielectric spacers on two opposite sides of the first dielectric portion. The first dielectric liner surrounds the first trench electrode and the first dielectric portion. The conductive layer covers the first dielectric cap layer and includes an electrode contact. The electrode contact includes a first portion in the body region and a second portion adjacent to one of the first dielectric spacers, where the first and second portions have the same width.

Abstract: An embodiment includes a process for treating an abdominal aortic aneurysm (AAA) endoleak with a shape memory polymer (SMP) foam device. First, a bifurcated stent graft is placed within the aneurysm while a micro guidewire is positioned within the aneurysm for future catheter access. Second, after placing the iliac graft extension, a catheter is introduced over wire to deliver embolic foams. Third, embolic foams expand and conform to the aneurysm wall. Fourth, embolic foams create a stable thrombus to prevent endoleak formation by isolating peripheral vessels from the aneurysm volume.

Abstract: An AC-to-DC power supply converts an input power source into an output power source, capable of having a single stage to achieve PFC and output regulation at the same time. The AC-to-DC power supply has an inductive device, a main switch, a backup circuit providing a backup power, and a power controller. The power controller controls the main switch and the backup circuit to generate a power transfer cycle with an input slot, an internal-burst slot, and a demagnetization time. During the input slot, the power controller turns ON the main switch, so the input power source supplies power to increase electromagnetic energy of the inductive device. During the internal-burst slot, the backup power supplies power to the inductive device. During the demagnetization time, the electromagnetic energy releases to supply power to the output power source or the backup power.

Abstract: A wide-angle lens assembly includes a first, second, third, fourth, fifth, sixth, seventh, eighth, and ninth lenses. The first and second lenses are with negative refractive power and include a convex surface facing an object side and a concave surface facing an image side respectively. The third lens is a biconcave lens with negative refractive power. The fourth and fifth lenses are biconvex lenses with positive refractive power. The sixth lens is with positive refractive power and includes a convex surface facing the image side. The seventh lens is with negative refractive power and includes a concave surface facing the object side. The eighth lens is with positive refractive power and includes a convex surface facing the object side. The ninth lens is with positive refractive power and includes a concave surface facing the object side and a convex surface facing the image side.

Abstract: Embodiments include, for example, mechanical release systems for implantable medical devices.

Abstract: The present invention relates to a touch detecting circuit, which comprises a touch driving circuit and a touch sensing circuit. The touch driving circuit generates a touch driving signal and provides it to at least one common electrode of a panel. The touch sensing circuit receives a plurality of sensing signals via a plurality of source lines or/and a plurality of gate lines of the panel for detecting the touch location. The sensing signals are generated corresponding to the touch driving signal. In addition, the touch driving circuit may provide the touch driving signal to the source lines. The touch sensing circuit receives the sensing signals via the gate lines for detecting the touch location.

Abstract: Embodiments include, for example, mechanical release systems for implantable medical devices.