Abstract: A semiconductor structure includes a substrate, an epitaxial layer disposed on the substrate, a conductive feature disposed in the epitaxial layer having a protruding portion that is higher than the epitaxial layer, and a diffusion barrier layer disposed on sidewalls of the conductive feature.

Abstract: A positioning method including following steps is provided. Firstly, several base stations are commanded to detect a tracked object. Then, a first position of the tracked object is obtained according to the first return information. Then, several fixed-type signal transceivers are selected according to the first position. Then, the selected fixed-type signal transceivers are commanded to detect the tracked object, and a second position of the tracked object is obtained according to the second return information received from the fixed-type signal transceivers.

Abstract: A display panel driving method includes scanning a plurality of first gate lines of a plurality of gate lines according to a first predetermined order during a first time period of a frame period, and scanning a plurality of second gate lines of the gate lines according to a second predetermined order during a second time period of the frame period. Voltage polarity of a data signal located in any of a plurality of data lines remains unchanged during the first time period. Voltage polarity of the data signal located in any of the data lines remains unchanged during the second time period.

Abstract: A multi-ring disc motor is revealed. The multi-ring disc motor includes a plurality of stator rings and a plurality of permanent magnets. The stator rings are disposed in a stator base and the permanent magnets are mounted on a plurality of circular ribs of a rotor base. The permanent magnets on the respective circular rib of the rotor base are corresponding to a coil on the stator ring in a respective circular groove of the stator base by the stator base and the rotor base connected to each other. Thereby high torque and high horsepower are generated by the stator rings on the stator base and the permanent magnets on the circular ribs of the rotor base. The power consumption is reduced effectively. Thus the battery life of vehicles such as cars is extended and this eliminates the needs to stop for charging.

Abstract: The present invention provides a form management system, comprising: a form building module, the form building module calling a word processing application software to obtain layout information of a form; and a common library building module, the common library building module building a correlation between a specific field of the form and default data of the specific field and storing the correlation in a common library.

Abstract: A semiconductor structure includes a substrate, an epitaxial layer disposed on the substrate, a conductive feature disposed in the epitaxial layer having a protruding portion that is higher than the epitaxial layer, and a diffusion barrier layer disposed on sidewalls of the conductive feature.

Abstract: A semiconductor device and methods for forming the same are provided. The method includes providing a substrate having a first conductive type, forming an epitaxial layer having the first conductive type on the substrate, forming a trench in the epitaxial layer, forming a first insulating layer in the trench and on the top surface of the epitaxial layer, forming a shield electrode and a mask layer on the first insulating layer in order, using the mask layer to remove a portion of the first insulating layer, wherein the top surface of the first insulating layer is higher than the top surface of the shield electrode after removing the portion of the first insulating layer, removing the mask layer, forming a second insulating layer on the first insulating layer and the shield electrode, and forming a gate electrode on the second insulating layer.

Abstract: The present invention relates to an over-ear headphones comprising a headband, two earpiece modules connected to two ends of the headband, a holder and an adjustable microphone. Each of the two earpiece modules comprises an elastic case, a fixing baffle connected to the elastic case, a speaker connected to the fixing baffle, a back cover, a LED light plate at a bottom of the hack cover, and two transparent plates at an outside of the back cover. The speaker comprises a plate, a T-bar, a magnetic element, a cushion ring, a diaphragm, a voice coil and a protection cap having plural first holes arranged in a cross pattern at a central thereof, plural second holes surrounding the plural first holes, and plural third, fourth and fifth holes sequentially and radially arranged thereon for surrounding the plural second holes.

Abstract: The present disclosure relates to an electronic application developing method. The method comprises providing a development platform with a plurality of cross-industry application templates. Users can design applications and plan business processes via the development platform efficiently without building any infrastructure or writing any programming code.

Abstract: A semiconductor device and methods for forming the same are provided. The method includes providing a substrate having a first conductive type, forming an epitaxial layer having the first conductive type on the substrate, forming a trench in the epitaxial layer, forming a first insulating layer in the trench and on the top surface of the epitaxial layer, forming a shield electrode and a mask layer on the first insulating layer in order, using the mask layer to remove a portion of the first insulating layer, wherein the top surface of the first insulating layer is higher than the top surface of the shield electrode after removing the portion of the first insulating layer, removing the mask layer, forming a second insulating layer on the first insulating layer and the shield electrode, and forming a gate electrode on the second insulating layer.

Abstract: A method for forming a semiconductor device is provided. A plurality of trenches are formed in the substrate. An isolation oxide layer is formed in the trenches and on the substrate. A shield polysilicon is deposited in the trenches and on the isolation oxide layer on the substrate. A first etching process is performed to remove a first portion of the shield polysilicon. A first removal process is performed to remove a first portion of the isolation oxide layer. A second etching process is performed to remove a second portion of the shield polysilicon. A second removal process is performed to remove a second portion of the isolation oxide layer. An inter-poly oxide layer is formed on the remaining shield polysilicon and the remaining isolation oxide layer, wherein the inter-poly oxide layer has a concave top surface.

Abstract: An embodiment includes a process for treating an abdominal aortic aneurysm (AAA) endoleak with a shape memory polymer (SMP) foam device. First, a bifurcated stent graft is placed within the aneurysm while a micro guidewire is positioned within the aneurysm for future catheter access. Second, after placing the iliac graft extension, a catheter is introduced over wire to deliver embolic foams. Third, embolic foams expand and conform to the aneurysm wall. Fourth, embolic foams create a stable thrombus to prevent endoleak formation by isolating peripheral vessels from the aneurysm volume.

Abstract: The present invention relates to an over-ear headphones comprising a headband, two earpiece modules connected to two ends of the headband, a holder and an adjustable microphone. Each of the two earpiece modules comprises an elastic case, a fixing baffle connected to the elastic case, a speaker connected to the fixing baffle, a back cover, a LED light plate at a bottom of the hack cover, and two transparent plates at an outside of the back cover. The speaker comprises a plate, a T-bar, a magnetic element, a cushion ring, a diaphragm, a voice coil and a protection cap having plural first holes arranged in a cross pattern at a central thereof, plural second holes surrounding the plural first holes, and plural third, fourth and fifth holes sequentially and radially arranged thereon for surrounding the plural second holes.

Abstract: A method for forming a semiconductor device is provided. A plurality of trenches are formed in the substrate. An isolation oxide layer is formed in the trenches and on the substrate. A shield polysilicon is deposited in the trenches and on the isolation oxide layer on the substrate. A first etching process is performed to remove a first portion of the shield polysilicon. A first removal process is performed to remove a first portion of the isolation oxide layer. A second etching process is performed to remove a second portion of the shield polysilicon. A second removal process is performed to remove a second portion of the isolation oxide layer. An inter-poly oxide layer is formed on the remaining shield polysilicon and the remaining isolation oxide layer, wherein the inter-poly oxide layer has a concave top surface.

Abstract: A telephoto lens assembly comprises sequentially from an object side to an image side along an optical axis a first lens, a second lens, a stop, a third lens, a fourth lens, a fifth lens and a sixth lens. The first lens has negative refractive power and includes a convex surface facing the object side. The second lens has negative refractive power and includes a convex surface facing the image side. The third lens has positive refractive power. The fourth lens has refractive power. The fifth lens has refractive power. The sixth lens has positive refractive power. The fourth lens and the fifth lens are cemented.

Abstract: A method for forming a semiconductor device is provided. A plurality of trenches are formed in the substrate. An isolation oxide layer is formed in the trenches and on the substrate. A shield polysilicon is deposited in the trenches and on the isolation oxide layer on the substrate. A first etching process is performed to remove a first portion of the shield polysilicon. A first removal process is performed to remove a first portion of the isolation oxide layer. A second etching process is performed to remove a second portion of the shield polysilicon. A second removal process is performed to remove a second portion of the isolation oxide layer. An inter-poly oxide layer is formed on the remaining shield polysilicon and the remaining isolation oxide layer, wherein the inter-poly oxide layer has a concave top surface.

Abstract: A method and a device for producing honeycomb particles capable of absorbing harmful molecular elements are disclosed. A chemical element having a crystal structure is dissolved in water in a certain percentage to form a chemical element solution, and then it is pressurized. The pressurized chemical element solution is sprayed out in mist form toward a forming mirror by a high-pressure nozzle of a spray tube. When the chemical element solution in mist form contacts the heated forming mirror, the moisture quickly bursts and evaporates to form fine particles. The dried fine particles of the chemical element are made to fall by the high frequency vibration and are collected. Accordingly, the chemical element having a crystal structure is formed into fine particles having many air holes, increasing the area for chemical reaction and further increasing the efficiency of absorption of harmful elements such as various toxic elements or bacteria.

Abstract: A method for forming a semiconductor device is provided. A plurality of trenches are formed in the substrate. An isolation oxide layer is formed in the trenches and on the substrate. A shield polysilicon is deposited in the trenches and on the isolation oxide layer on the substrate. A first etching process is performed to remove a first portion of the shield polysilicon. A first removal process is performed to remove a first portion of the isolation oxide layer. A second etching process is performed to remove a second portion of the shield polysilicon. A second removal process is performed to remove a second portion of the isolation oxide layer. An inter-poly oxide layer is formed on the remaining shield polysilicon and the remaining isolation oxide layer, wherein the inter-poly oxide layer has a concave top surface.

Abstract: The present invention relates to a hinge system of an electric door comprising a control module, an intelligent automatic recognition system for installing in a door or a door frame and including a recognition device and a sensing module, and a hinge assembly. The hinge assembly comprises a pivot housing, a power unit disposed in the pivot housing and electrically connected to the control module, a first hinge member having a first knuckle for sleeving on the pivot housing and a second hinge member connected to two ends of the pivot housing. The power unit comprises a motor assembly having a motor axis, a reduction gearbox having one end connected to the motor axis, a gear shaft and plural planetary gears, and a gear connected to the gear shaft of the reduction gearbox.

Abstract: A semiconductor device and methods for forming the same are provided. The method includes providing a substrate having a first conductive type, forming an epitaxial layer having the first conductive type on the substrate, forming a trench in the epitaxial layer, forming a first insulating layer in the trench and on the top surface of the epitaxial layer, forming a shield electrode and a mask layer on the first insulating layer in order, using the mask layer to remove a portion of the first insulating layer, wherein the top surface of the first insulating layer is higher than the top surface of the shield electrode after removing the portion of the first insulating layer, removing the mask layer, forming a second insulating layer on the first insulating layer and the shield electrode, and forming a gate electrode on the second insulating layer.