Abstract: A light-mixing flashlight has a body, three light-emitting diodes, three first reflectors, and three second reflectors. The body has a mounting surface formed in the body, a body opening opposite to the mounting surface, and three light recesses formed in an interior of the body. The light-emitting diodes are mounted in the light recesses, and are respectively a red light, a green light, and a blue light light-emitting diode. The first reflectors are formed as parabolic mirrors and are respectively mounted in the light recesses via a working angle. An opening of each first reflector faces toward the corresponding light-emitting diode. The second reflectors are formed as spherical mirrors, are mounted on the mounting surface, and respectively correspond in position to the first reflectors. Therefore, the light-mixing flashlight has an improved emitting efficiency.

Abstract: A dual-shaft synchronous transmission device is applied to an electronic apparatus. The distance between the two shafts of the dual-shaft synchronous transmission device is shortened so that the electronic device can be thinned and lightweight. The dual-shaft synchronous transmission device includes a driver and a reactor respectively disposed on a first shaft and a second shaft and a link unit. Spur gear structures or crown gear structures are respectively disposed on the driver and the reactor. Crown gear structures or spur gear structures are respectively disposed at two ends of the link unit correspondingly engaged with the spur gear structures or crown gear structures of the driver and the reactor. When the first shaft and the driver are rotated, the driver rotates the link unit to drive the reactor and the second shaft to synchronously rotate in a direction reverse to the rotational direction of the driver.

Abstract: A dual-shaft synchronous transmission fixing device has a simplified structure and minified volume. The gap between the rotary shafts can be changed or adjusted according to the transmission specification so that the electronic device can be thinned and lightweight. The fixing device includes a driver and a reactor respectively disposed on a first shaft and a second shaft and a link unit engaged with the driver and the reactor, whereby the first and second shafts can be synchronously rotated. The fixing device further includes a main fixing plate and a subsidiary fixing plate having identical structures. The main fixing plate and the subsidiary fixing plate are disposed on the first and second shafts. Each of the main fixing plate and the subsidiary fixing plate has a base section for together pivotally connecting with the link unit.

Abstract: A transmission device applied to a pivot shaft mechanism provides a security system and is easy to assemble. The transmission device includes at least one rotary shaft, a drive section movable with the rotation of the rotary shaft, a driver (transversely) reciprocally movable and a turning unit having a first end connected with the driver and a second end assembled with a carrier body. The driver includes an arm section provided with an elastic body and a hand section connected with the arm section. When the driver is transversely moved, the turning unit is swung, whereby the second end of the turning unit drives the carrier body for lifting or lowering a substrate body or a frame in accordance with the operation mode of an electronic apparatus.

Abstract: A pivot shaft transmission device provides a security system and is easy to assemble. The pivot shaft transmission device includes at least one rotary shaft, a drive section movable with the rotation of the rotary shaft, a driver (transversely) movable along a rail between a first position and a second position, a turning unit having a first end connected with the driver and a second end, and a transmission unit assembled with the second end of the turning unit. The transmission unit includes a first section, a second section and at least one elastic body assembled with each other. When the turning unit is swung, the transmission unit is driven to (longitudinally) move to drive a connection section and a carrier body for lifting or lowering a substrate body or a frame in accordance with the operation mode of an electronic apparatus.

Abstract: A dual-shaft synchronous transmission fixing device has a simplified structure and minified volume. The gap between the rotary shafts can be changed or adjusted according to the transmission specification so that the electronic device can be thinned and lightweight. The fixing device includes a driver and a reactor respectively disposed on a first shaft and a second shaft and a link unit engaged with the driver and the reactor, whereby the first and second shafts can be synchronously rotated. The fixing device further includes a main fixing plate and a subsidiary fixing plate having identical structures. The main fixing plate and the subsidiary fixing plate are disposed on the first and second shafts. Each of the main fixing plate and the subsidiary fixing plate has a base section for together pivotally connecting with the link unit.

Abstract: A pivot mechanism of the synchronous hinge device is applied to a foldable electronic apparatus. The pivot mechanism can be stably rotated and the distance between two shafts of the dual-shaft hinge is shortened, whereby the electronic device can be smoothly rotated and have a miniaturized and lightweight structure. The pivot mechanism includes a driver disposed on a first shaft and a reactor disposed on a second shaft and a link unit. Spur gears and conical (bevel) gears are respectively disposed at two ends of the link unit and the driver and the reactor. The Spur gears and conical (bevel) gears are engaged with each other to transmit power, whereby the first shaft with the driver and the second shaft with the reactor can be stably synchronously rotated in reverse directions.

Abstract: A dual-shaft synchronous transmission device is applied to an electronic apparatus. The distance between the two shafts of the dual-shaft synchronous transmission device is shortened so that the electronic device can be thinned and lightweight. The dual-shaft synchronous transmission device includes a driver and a reactor respectively disposed on a first shaft and a second shaft and a link unit. Spur gear structures or crown gear structures are respectively disposed on the driver and the reactor. Crown gear structures or spur gear structures are respectively disposed at two ends of the link unit correspondingly engaged with the spur gear structures or crown gear structures of the driver and the reactor. When the first shaft and the driver are rotated, the driver rotates the link unit to drive the reactor and the second shaft to synchronously rotate in a direction reverse to the rotational direction of the driver.

Abstract: Protection of a solder ball joint is disclosed in which the solder ball joint is located below the surface level of the encapsulating buffer layer. The buffering layer is etched to expose one or more electrode posts, each of which may be made up of a single column or multiple columns. A top layer resulting either from a top conductive cap or a plating layer around the electrode posts also lies below the buffer layer. When the solder ball is placed onto the posts, the solder/ball joint is protected in a position below the surface of the buffer layer, while still maintaining an electrical connection between the various solder balls and their associated or capping/plating material, electrode posts, wiring layers, and circuit layers. Therefore, the entire ball joint is protected from direct stress.

Abstract: A flyback power converter is disclosed. The flyback power converter includes a voltage transformer, a main switch, a synchronous rectification switch, a synchronous rectification control circuit, a sampling circuit and an operation circuit. A control end of the main switch receives a main switch signal so as to control the main switch. The synchronous rectification control circuit transmits control signal to control end of the synchronous rectification switch according to sensing signal received. The sampling circuit samples the state of the synchronous rectification switch so as to generate first logic signal and second logic signal. The operation circuit executes timing for charging/discharging according to the first and the second logic-signal, so as to output switch cut-off pulse signal to a voltage-dividing circuit. If voltage of the sensing signal is lower than predetermined threshold voltage, the synchronous rectification switch enters into cut-off state according to the control signal.

Abstract: Integrated circuit methods are described. The methods include providing a photomask that includes two main features for two via openings and further includes an optical proximity correction (OPC) feature linking the two main features; forming a hard mask layer on a substrate, the hard mask layer including two trench openings; forming a patterned resist layer over the hard mask layer using the photomask, wherein the patterned resist layer includes a peanut-shaped opening with two end portion aligned with the two trench openings of the hard mask layer, respectively; and performing a first etch process to the substrate using the hard mask layer and the patterned resist layer as a combined etch mask.

Abstract: A holder stand includes an adjustable support arm assembly, a holder member pivotally connected to one end of the support arm assembly by a ball-and-socket joint for holding a mobile electronic device, a base member defining a position-limited groove and two retaining holes at two opposite sides of the position-limited groove, and a mating connection block assembly including a housing pivotally connected to an opposite end of the support arm assembly and detachably insertable into the position-limited groove of the base member, two spring members mounted in the housing and two press members coupled to two opposite lateral sides of the housing and respectively forced by the spring members into engagement with the retaining holes of the base member to releasably lock the mating connection block assembly to the base member.

Abstract: A semiconductor structure less affected by stress and a method for forming the same are provided. The semiconductor structure includes a semiconductor chip. Stress-sensitive circuits are substantially excluded out of an exclusion zone to reduce the effects of the stress to the stress-sensitive circuits. The stress-sensitive circuits include analog circuits. The exclusion zone preferably includes corner regions of the semiconductor chip, wherein the corner regions preferably have a diagonal length of less than about one percent of the diagonal length of the semiconductor chip. The stress-sensitive analog circuits preferably include devices having channel lengths less than about five times the minimum channel length.

Abstract: A semiconductor structure less affected by stress and a method for forming the same are provided. The semiconductor structure includes a semiconductor chip. Stress-sensitive circuits are substantially excluded out of an exclusion zone to reduce the effects of the stress to the stress-sensitive circuits. The stress-sensitive circuits include analog circuits. The exclusion zone preferably includes corner regions of the semiconductor chip, wherein the corner regions preferably have a diagonal length of less than about one percent of the diagonal length of the semiconductor chip. The stress-sensitive analog circuits preferably include devices having channel lengths less than about five times the minimum channel length.

Abstract: Integrated circuit methods are described. The methods include providing a photomask that includes two main features for two via openings and further includes an optical proximity correction (OPC) feature linking the two main features; forming a hard mask layer on a substrate, the hard mask layer including two trench openings; forming a patterned resist layer over the hard mask layer using the photomask, wherein the patterned resist layer includes a peanut-shaped opening with two end portion aligned with the two trench openings of the hard mask layer, respectively; and performing a first etch process to the substrate using the hard mask layer and the patterned resist layer as a combined etch mask.

Abstract: Integrated circuit methods are described. The methods include providing a photomask that includes two main features for two via openings and further includes an optical proximity correction (OPC) feature linking the two main features; forming a hard mask layer on a substrate, the hard mask layer including two trench openings; forming a patterned resist layer over the hard mask layer using the photomask, wherein the patterned resist layer includes a peanut-shaped opening with two end portion aligned with the two trench openings of the hard mask layer, respectively; and performing a first etch process to the substrate using the hard mask layer and the patterned resist layer as a combined etch mask.

Abstract: A flyback power converter is disclosed. The flyback power converter includes a voltage transformer, a main switch, a synchronous rectification switch, a synchronous rectification control circuit, a sampling circuit and an operation circuit. A control end of the main switch receives a main switch signal so as to control the main switch. The synchronous rectification control circuit transmits control signal to control end of the synchronous rectification switch according to sensing signal received. The sampling circuit samples the state of the synchronous rectification switch so as to generate first logic signal and second logic signal. The operation circuit executes timing for charging/discharging according to the first and the second logic-signal, so as to output switch cut-off pulse signal to a voltage-dividing circuit. If voltage of the sensing signal is lower than predetermined threshold voltage, the synchronous rectification switch enters into cut-off state according to the control signal.

Abstract: A semiconductor structure less affected by stress and a method for forming the same are provided. The semiconductor structure includes a semiconductor chip. Stress-sensitive circuits are substantially excluded out of an exclusion zone to reduce the effects of the stress to the stress-sensitive circuits. The stress-sensitive circuits include analog circuits. The exclusion zone preferably includes corner regions of the semiconductor chip, wherein the corner regions preferably have a diagonal length of less than about one percent of the diagonal length of the semiconductor chip. The stress-sensitive analog circuits preferably include devices having channel lengths less than about five times the minimum channel length.

Abstract: A semiconductor structure less affected by stress and a method for forming the same are provided. The semiconductor structure includes a semiconductor chip. Stress-sensitive circuits are substantially excluded out of an exclusion zone to reduce the effects of the stress to the stress-sensitive circuits. The stress-sensitive circuits include analog circuits. The exclusion zone preferably includes corner regions of the semiconductor chip, wherein the corner regions preferably have a diagonal length of less than about one percent of the diagonal length of the semiconductor chip. The stress-sensitive analog circuits preferably include devices having channel lengths less than about five times the minimum channel length.

Abstract: Protection of a solder ball joint is disclosed in which the solder ball joint is located below the surface level of the encapsulating buffer layer. The buffering layer is etched to expose one or more electrode posts, each of which may be made up of a single column or multiple columns. A top layer resulting either from a top conductive cap or a plating layer around the electrode posts also lies below the buffer layer. When the solder ball is placed onto the posts, the solder/ball joint is protected in a position below the surface of the buffer layer, while still maintaining an electrical connection between the various solder balls and their associated or capping/plating material, electrode posts, wiring layers, and circuit layers. Therefore, the entire ball joint is protected from direct stress.