Abstract: An electrostatic discharge (ESD) unit is described, including a first device, and a second device coupled to the first device in parallel. In an ESD event, the first device is turned on before the second device is turned on. The second device may be turned on by the turned-on first device to form an ESD path in the ESD event.

Abstract: An ESD protection semiconductor device includes a substrate, a gate set formed on the substrate, a source region and a drain region formed in the substrate respectively at two sides of the gate set, and at least a first doped region formed in the drain region. The source region and the drain region include a first conductivity type, and the first doped region includes a second conductivity type. The first conductivity type and the second conductivity type are complementary to each other. The first doped region is electrically connected to a ground potential.

Abstract: An electrostatic discharge (ESD) unit is described, including a first device, and a second device coupled to the first device in parallel. In an ESD event, the first device is turned on before the second device is turned on. The second device may be turned on by the turned-on first device to form an ESD path in the ESD event.

Abstract: An ESD protection semiconductor device includes a substrate, a gate set formed on the substrate, a source region and a drain region formed in the substrate respectively at two sides of the gate set, at least a first doped region formed in the source region, and at least a second doped region formed in the drain region. The source region, the drain region and the second doped region include a first conductivity type, and the first doped region includes a second conductivity type. The first conductivity type and the second conductivity type are complementary to each other. The second doped region is electrically connected to the first doped region.

Abstract: An ESD protection semiconductor device includes a substrate, a gate set formed on the substrate, a source region and a drain region formed in the substrate respectively at two sides of the gate set, and at least a first doped region formed in the drain region. The source region and the drain region include a first conductivity type, and the first doped region includes a second conductivity type. The first conductivity type and the second conductivity type are complementary to each other. The first doped region is electrically connected to a ground potential.

Abstract: An ESD protection semiconductor device includes a substrate, a gate set formed on the substrate, a source region and a drain region formed in the substrate respectively at two sides of the gate set, at least a first doped region formed in the source region, and at least a second doped region formed in the drain region. The source region, the drain region and the second doped region include a first conductivity type, and the first doped region includes a second conductivity type. The first conductivity type and the second conductivity type are complementary to each other. The second doped region is electrically connected to the first doped region.

Abstract: An electrostatic discharge protection semiconductor device includes a substrate, a gate set positioned on the substrate, a source region and a drain region formed in the substrate respectively at two sides of the gate set, at least a first doped region formed in the drain region, and at least a second doped region formed in the substrate. The source region and the drain region include a first conductivity type, the first doped region and the second doped region include a second conductivity type, and the first conductivity and the second conductivity type are complementary to each other. The first doped region and the second doped region are electrically connected to each other.

Abstract: This disclosure relates to golf balls having a cover layer made from a crosslinked thermoplastic polyurethane elastomer. The crosslinked thermoplastic polyurethane elastomer includes crosslinks located in the hard segments, where the crosslinks being the reaction product of unsaturated bonds located in the hard segments catalyzed by a free radical initiator. The crosslinks may be formed from an unsaturated diol as a chain extender. The unsaturated diol may be trimethylolpropane monoallylether (TMPME). The cover layer may have certain properties, such as a desirable flexural modulus value and a desirable Shore D hardness value, that further contribute to the golf ball having a high degree of scuff resistance.

Abstract: This disclosure relates to golf balls having a cover layer made from a crosslinked thermoplastic polyurethane elastomer. The crosslinked thermoplastic polyurethane elastomer includes crosslinks located in the hard segments, where the crosslinks being the reaction product of unsaturated bonds located in the hard segments catalyzed by a free radical initiator. The crosslinks may be formed from an unsaturated diol as a chain extender. The unsaturated diol may be trimethylolpropane monoallylether (TMPME). The cover layer may have certain properties, such as a desirable flexural modulus value and a desirable Shore D hardness value, that further contribute to the golf ball having a high degree of scuff resistance.

Abstract: This disclosure relates to golf balls made from a crosslinked thermoplastic polyurethane elastomer. The crosslinked thermoplastic polyurethane elastomer includes crosslinks located in the hard segments, where the crosslinks being the reaction product of unsaturated bonds located in the hard segments as catalyzed by a free radical initiator. The crosslinks may be formed from an unsaturated diol as a chain extender. The unsaturated diol may be trimethylolpropane monoallylether (TMPME). The golf ball may include the crosslinked thermoplastic polyurethane elastomer in the cover layer, in which case the cover layer may exhibit a high degree of scuff resistance.

Abstract: This disclosure relates to golf balls made from a crosslinked thermoplastic polyurethane elastomer. The crosslinked thermoplastic polyurethane elastomer includes crosslinks located in the hard segments, where the crosslinks being the reaction product of unsaturated bonds located in the hard segments as catalyzed by a free radical initiator. The crosslinks may be formed from an unsaturated diol as a chain extender. The unsaturated diol may be trimethylolpropane monoallylether (TMPME). The golf ball may include the crosslinked thermoplastic polyurethane elastomer in the cover layer, in which case the cover layer may exhibit a high degree of scuff resistance.

Abstract: This disclosure relates to golf balls having a cover layer made from a crosslinked thermoplastic polyurethane elastomer. The crosslinked thermoplastic polyurethane elastomer includes crosslinks located in the hard segments, where the crosslinks being the reaction product of unsaturated bonds located in the hard segments catalyzed by a free radical initiator. The crosslinks may be formed from an unsaturated diol as a chain extender. The unsaturated diol may be trimethylolpropane monoallylether (TMPME). The cover layer may have certain properties, such as a desirable flexural modulus value and a desirable Shore D hardness value, that further contribute to the golf ball having a high degree of scuff resistance.

Abstract: This disclosure relates to four-piece golf balls having an outer cover layer made from a crosslinked thermoplastic polyurethane elastomer. The crosslinked thermoplastic polyurethane elastomer includes crosslinks located in the hard segments, where the crosslinks being the reaction product of unsaturated bonds located in the hard segments catalyzed by a free radical initiator. The crosslinks may be formed from an unsaturated diol as a chain extender. The unsaturated diol may be trimethylolpropane monoallylether (TMPME). The four-piece golf ball may include an inner core layer formed from a highly neutralized acid polymer composition. The four-piece golf ball may also include an outer core layer formed from a polybutadiene rubber. The golf ball may exhibit a high degree of scuff resistance.

Abstract: This disclosure is directed to crosslinked thermoplastic polyurethane elastomers that include allyl ether side groups in the urethane structure, specifically in the hard segments of the polyurethane polymer, and a free radical source. This disclosure is also directed to methods of synthesizing the crosslinked thermoplastic polyurethane elastomers having allyl ether side groups in the hard segments. The solvent resistance, water resistance, weather resistance, and heat resistance are improved as a result of the urethanes elastomers being prepared according to this disclosure. As a result of these improved properties, the finished crosslinked polyurethane elastomers can be applied in articles such as footwear parts or soles, tubes, hoses, cables, films and sheets.

Abstract: This disclosure relates to golf balls made from a crosslinked thermoplastic polyurethane elastomer. The crosslinked thermoplastic polyurethane elastomer includes crosslinks located in the hard segments, where the crosslinks being the reaction product of unsaturated bonds located in the hard segments as catalyzed by a free radical initiator. The crosslinks may be formed from an unsaturated diol as a chain extender. The unsaturated diol may be trimethylolpropane monoallylether (TMPME). The golf ball may include the crosslinked thermoplastic polyurethane elastomer in the cover layer, in which case the cover layer may exhibit a high degree of scuff resistance.