Patents by Inventor Chun-Hung Chen

Chun-Hung Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20260155162
    Abstract: A sense amplifier circuit including a sense amplifier and a control circuit is provided. The sense amplifier is configured to detect input data. The control circuit is coupled to the sense amplifier. The control circuit outputs a control signal to control the sense amplifier to detect the input data. The control circuit controls whether the sense amplifier performs a pre-charge operation or a pre-discharge operation based on the input data of a previous cycle and a current cycle.
    Type: Application
    Filed: May 14, 2025
    Publication date: June 4, 2026
    Applicant: Novatek Microelectronics Corp.
    Inventors: Yi-Chia Chen, Chun-Hung Chen
  • Patent number: 12648438
    Abstract: An electronic device and a manufacturing method thereof are disclosed. The electronic device includes a connector, an electronic component, and a heat sink. The connector has at least one conductive structure and at least one first heat dissipation structure. The at least one conductive structure and the at least one first heat dissipation structure are physically separated and electrically insulated from each other. The electronic component is electrically connected to the at least one conductive structure. The heat sink is connected to the at least one first heat dissipation structure. The heat sink and the electronic component are disposed on opposite sides of the connector.
    Type: Grant
    Filed: May 31, 2022
    Date of Patent: June 2, 2026
    Assignee: Innolux Corporation
    Inventors: Chin-Lung Ting, Liang-Lu Chen, Kuang-Ming Fan, Chia-Lin Yang, Chun-Hung Chen
  • Patent number: 12641811
    Abstract: A method of forming a semiconductor device includes forming first and second fin structures on a substrate, forming first and second gate stacks crossing the first and second fin structures, respectively, wherein the first fin structure has a first channel region under the first gate stack and a first source/drain region adjacent to the first channel region, and the second fin structure has a second channel region under the second gate stack and a second source/drain region adjacent to the second channel region, performing an ion implantation process to introduce impurities into the second source/drain region to form an implanted region in the second source/drain region, performing an etching process to form first and second recesses in the first and second source/drain regions, respectively, wherein the second recess penetrates through the implanted region, and forming epitaxy structures in the first and second recesses, respectively.
    Type: Grant
    Filed: August 3, 2022
    Date of Patent: May 26, 2026
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Li-Hui Chen, Chun-Hung Chen, Jhon Jhy Liaw
  • Publication number: 20260133826
    Abstract: An API scheduling management system is provided, which includes an in-memory database, a relational database, a front-end interface module, a job execution module, and an automated management module. The front-end interface module receives API scheduling settings corresponding to API jobs from a user interface and synchronizes the API scheduling settings to the in-memory database and the relational database. The job execution module executes corresponding API jobs according to the API scheduling settings in the in-memory database. The automated management module checks whether the API scheduling settings in the in-memory database and the relational database are consistent. In response to detecting an inconsistency between the API scheduling settings in the in-memory database and the relational database, the automated management module disables the job execution module, aligns the API scheduling settings between the in-memory database and the relational database, and enables the job execution module.
    Type: Application
    Filed: January 14, 2025
    Publication date: May 14, 2026
    Inventors: Chun-Chieh MAO, Huan-Ting CHEN, Mao-Tien KUNG, Meng-Yu LI, Chun-Hung CHEN, Chen-Chung LEE
  • Patent number: 12628406
    Abstract: A first transistor includes a first gate, a first source/drain, and a first source/drain contact disposed over the first source/drain. The first gate has a first dimension measured in a first lateral direction. The first source/drain contact has a second dimension measured in the first lateral direction. A second transistor includes a second gate, a second source/drain, and a second source/drain contact disposed over the second source/drain. The second gate has a third dimension measured in the first lateral direction. The second source/drain contact has a fourth dimension measured in the first lateral direction. A first ratio of the first dimension and the second dimension is different from a second ratio of the third dimension and the fourth dimension.
    Type: Grant
    Filed: August 31, 2022
    Date of Patent: May 12, 2026
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Li-Hui Chen, Chun-Hung Chen, Jhon Jhy Liaw
  • Patent number: 12623613
    Abstract: A shock absorbing structure includes: a housing having an opening, an inner surface and an outer surface; a universal joint unit having a spherical joint, a bushing having a blocking plate and a convex piece, and a screw bolt; a shock absorbing ring sheathing a portion of the convex piece protruding from the housing and elastically abutting between the outer surface and the spherical joint; and a clamping claw disposed on the housing and covering the inner surface and the blocking plate. When the clamping claw is applied with an external force to move the housing toward the universal joint unit, the shock absorbing ring generates an elastic deformation to absorb an impact force.
    Type: Grant
    Filed: February 18, 2024
    Date of Patent: May 12, 2026
    Assignee: POWERGENE TECHNOLOGY CO., LTD.
    Inventors: Hui-Te Hsu, Chun-Hung Chen
  • Patent number: 12594304
    Abstract: The present disclosure provides a method for treating liver cirrhosis by using a composition including mesenchymal stem cells, extracellular vesicles produced by the mesenchymal stem cells, and growth factors. The composition of the present disclosure achieves the effect of treating liver cirrhosis through various efficacy experiments.
    Type: Grant
    Filed: October 4, 2023
    Date of Patent: April 7, 2026
    Assignee: GWO XI STEM CELL APPLIED TECHNOLOGY CO., LTD.
    Inventors: Po-Cheng Lin, Pi-Chun Huang, Zih-Han Hong, Ming-Hsi Chuang, Yi-Chun Lin, Chia-Hsin Lee, Chun-Hung Chen, Chao-Liang Chang, Kai-Ling Zhang
  • Patent number: 12592175
    Abstract: A gate driver circuit configured to drive a display panel is provided. The gate driver circuit includes an output buffer circuit and a controller circuit. The output buffer circuit includes a plurality of current transmission paths. The output buffer circuit is configured to output a driving signal to drive the display panel. The controller circuit is coupled to the output buffer circuit. The controller circuit is configured to control conduction states of the current transmission paths of the output buffer circuit.
    Type: Grant
    Filed: September 17, 2024
    Date of Patent: March 31, 2026
    Assignee: Novatek Microelectronics Corp.
    Inventors: Kai-Ting Yuan, Wei-Lun Shih, Chun-Hung Chen, Li-Yang Tang
  • Patent number: 12570008
    Abstract: A vacuum suction pen to take reliable hold of objects of different shapes without manual contact includes a holder with an air duct penetrating the holder. A first sleeve is sleeved on one end of the holder, and a first adsorption module is movably arranged on the first sleeve to move along a first direction. The first suction nozzle can move in the horizontal direction, the second nozzle can move in the vertical direction, and the third suction nozzle can rotate around the holder. The positions and relative positions of each suction nozzle on the product to be lifted and manipulated can be adjusted, so as to more accurately locate the center of gravity of products with irregular shapes or of uneven materials, and so as to secure a stable hold on the objects.
    Type: Grant
    Filed: April 21, 2022
    Date of Patent: March 10, 2026
    Assignee: TRIPLE WIN TECHNOLOGY(SHENZHEN) CO.LTD.
    Inventors: Gen Tang, Chun-Hung Chen
  • Publication number: 20260059854
    Abstract: In a method of manufacturing a semiconductor device, a first-conductivity type implantation region is formed in a semiconductor substrate, and a carbon implantation region is formed at a side boundary region of the first-conductivity type implantation region.
    Type: Application
    Filed: November 3, 2025
    Publication date: February 26, 2026
    Inventors: Chun-Hung Chen, Chih-Hung Hsieh, Jhon Jhy Liaw
  • Patent number: 12562129
    Abstract: Disclosed are a display device, a display driving circuit thereof, and an operating method thereof. The display device includes a power management circuit and a display driving circuit. The display driving circuit converts a power voltage provided by the power management circuit into a first boundary voltage and a second boundary voltage, and generates multiple gamma voltages based on the first boundary voltage and the second boundary voltage. When a system condition transitions from a normal state to a specified state, the first boundary voltage transitions to a specified boundary level, and the power voltage transitions to a specified power level. When the system condition returns from the specified state to the normal state, the first boundary voltage returns to a normal boundary level, and the power voltage returns to a normal power level.
    Type: Grant
    Filed: August 1, 2024
    Date of Patent: February 24, 2026
    Assignee: Novatek Microelectronics Corp.
    Inventors: Hao-Jan Yang, Wei-Lun Shih, Kun-Zheng Lin, Chun-Hung Chen
  • Patent number: 12557303
    Abstract: A capacitor structure comprises a substrate having a first side and a second side opposite to the first side; a plurality of first trenches formed on the first side of the substrate; a plurality of second trenches formed on the second side of the substrate; a first capacitor extending along the first side and into the first trenches; and a second capacitor extending along the second side and into the second trenches, wherein a first depth of each of the first trenches or a second depth of each of the second trenches is greater than half of a thickness of the substrate.
    Type: Grant
    Filed: June 14, 2024
    Date of Patent: February 17, 2026
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Teng-Chuan Hu, Chu-Fu Lin, Chun-Hung Chen
  • Publication number: 20260043832
    Abstract: A conductive membrane for testing, including: a circuit structure including a first metal layer and a second metal layer disposed on the first metal layer; a protrusion portion disposed on the circuit structure and protruding from the circuit structure; and an insulating layer disposed surrounding the first metal layer and the second metal layer, wherein the protrusion portion and the second metal layer are overlapped, and at least part of the insulating layer is disposed between the second metal layer and the protrusion portion.
    Type: Application
    Filed: July 8, 2025
    Publication date: February 12, 2026
    Inventors: Kuang-Ming FAN, Yi-Liang CHEN, Chun-Hung CHEN
  • Publication number: 20260040914
    Abstract: A method for fabricating semiconductor device includes the steps of first providing a stack structure having a shallow trench isolation (STI) under a first substrate, a contact etch stop layer (CESL) under the STI, an interlayer dielectric (ILD) layer under the CESL, and a first metal interconnection under the ILD layer and then forming a second metal interconnection penetrating through the first substrate, the STI, the CESL, and the ILD layer to contact the first metal interconnection and a liner adjacent to a sidewall of the second metal interconnection.
    Type: Application
    Filed: January 16, 2025
    Publication date: February 5, 2026
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Teng-Chuan Hu, Chu-Fu Lin, Chuan-Lan Lin, Chun-Hung Chen, Chiao-Hui Tu
  • Patent number: 12541269
    Abstract: A driver circuit, configured to drive a touch display panel, is provided. The touch display panel includes a sensor. The driver circuit includes a timing control circuit and a touch sensing circuit. The timing control circuit is configured to output a touch driving signal to the sensor. The sensor generates a sensing signal according to the touch driving signal. The touch sensing circuit is coupled to the timing control circuit and is configured to receive the sensing signal. The timing control circuit determines a timing of the touch driving signal according to a noise duration signal to drive the sensor to generate the sensing signal.
    Type: Grant
    Filed: May 1, 2024
    Date of Patent: February 3, 2026
    Assignee: Novatek Microelectronics Corp.
    Inventors: Chun-Ching Huang, Chun-Hung Chen, Yu-Chung Lin
  • Publication number: 20260018465
    Abstract: The disclosure provides a method of manufacturing an electronic device. The method of manufacturing the electronic device includes the following steps: providing a transparent carrier having an accommodation space, wherein the transparent carrier has a first mark; disposing a sample in the accommodation space of the transparent carrier, wherein the sample has a second mark; calculating an offset of the sample according to the first mark, the second mark, and a standard value; and forming a third mark on the sample or the transparent carrier according to the offset. The method of manufacturing of the electronic device of the disclosure may improve process yield or reliability.
    Type: Application
    Filed: June 17, 2025
    Publication date: January 15, 2026
    Applicant: Innolux Corporation
    Inventors: Chao-Jen Chen, Chien-Hsing Lee, Shih-Jung Teng, Chun-Hung Chen
  • Patent number: 12491332
    Abstract: An oscillating positive expiratory pressure device includes a housing, a top cover, and an oscillating unit. The housing includes a bottom wall and a surrounding wall. The bottom wall has an inclined enclosing surface extending downwardly and terminating at an opening. The oscillating unit is swingably connected to and disposed within the housing. The oscillating unit includes a swing member, and first and second weighting pieces. The swing member includes a swing arm, and first and second swing blocks connected to the swing arm. The first weighting piece is carried on the first swing block. The second weighting piece is carried on the second swing block. The swing arm is swingable to move the second swing block to block and unblock the opening.
    Type: Grant
    Filed: June 8, 2022
    Date of Patent: December 9, 2025
    Assignee: ENCHANT TEK. CO., LTD.
    Inventors: Chun-Hung Chen, Ling-Ling Leonard Lin, Min-Hsien Huang
  • Patent number: 12487709
    Abstract: A driver circuit, configured to drive a touch display panel, is provided. The touch display panel includes a sensor. The driver circuit includes a timing control circuit and a touch sensing circuit. The timing control circuit is configured to output a touch driving signal to the sensor. The sensor generates a sensing signal according to the touch driving signal. The touch sensing circuit is coupled to the timing control circuit and is configured to receive the sensing signal. The timing control circuit determines a timing of the touch driving signal according to a noise duration signal to drive the sensor to generate the sensing signal.
    Type: Grant
    Filed: May 1, 2024
    Date of Patent: December 2, 2025
    Assignee: Novatek Microelectronics Corp.
    Inventors: Chun-Ching Huang, Chun-Hung Chen, Yu-Chung Lin
  • Patent number: 12490509
    Abstract: In a method of manufacturing a semiconductor device, a first-conductivity type implantation region is formed in a semiconductor substrate, and a carbon implantation region is formed at a side boundary region of the first-conductivity type implantation region.
    Type: Grant
    Filed: January 12, 2024
    Date of Patent: December 2, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Hung Chen, Chih-Hung Hsieh, Jhon Jhy Liaw
  • Publication number: 20250363957
    Abstract: Disclosed are a display device, a display driving circuit thereof, and an operating method thereof. The display device includes a power management circuit and a display driving circuit. The display driving circuit converts a power voltage provided by the power management circuit into a first boundary voltage and a second boundary voltage, and generates multiple gamma voltages based on the first boundary voltage and the second boundary voltage. When a system condition transitions from a normal state to a specified state, the first boundary voltage transitions to a specified boundary level, and the power voltage transitions to a specified power level. When the system condition returns from the specified state to the normal state, the first boundary voltage returns to a normal boundary level, and the power voltage returns to a normal power level.
    Type: Application
    Filed: August 1, 2024
    Publication date: November 27, 2025
    Applicant: Novatek Microelectronics Corp.
    Inventors: Hao-Jan Yang, Wei-Lun Shih, Kun-Zheng Lin, Chun-Hung Chen