Abstract: The present invention discloses a vertical junction structure with multi-PN channels, which provides a maximum interface between p-type and n-type materials in order to assist the charge separation, and offers continuous phases in both p- and n-type materials for charge transport in opposite directions. The present invention also provides methods for constructing the device structures. The main steps include 1) assembling a porous structure or a framework with semiconductor materials of one conduction type on a first electrode, 2) filling pores or coating the framework made from the materials in step 1 with semiconductors or precursors of conducting polymer of a opposite conduction type, 3) chemically and physically treating the system to form closed packed multi-PN channels.

Abstract: Photonic Band Gap (PBG) structures are utilized in microwave components as filters to suppress unwanted signals because they have the ability to produce a bandstop effect at certain frequency range depending on the structural dimensions. The unique property of PBG structures is due to the periodic change of the dielectric permittivity so interferences are created with the traveling electromagnetic waves. Such periodic arrangement could exist either inside of the dielectric substrate or in the ground plane of a microstrip transmission line structure. This invention provides tunable or switchable planar PBG structures, which contains lattice pattern of periodic perforations inside of the ground plane. The tuning or switching of the bandstop characteristics is achieved by depositing a conducting island surrounded by a layer of controllable thin film with variable conductivities.

Abstract: The present invention discloses a vertical junction structure with multi-PN channels, which provides a maximum interface between p-type and n-type materials in order to assist the charge separation, and offers continuous phases in both p- and n-type materials for charge transport in opposite directions. The present invention also provides methods for constructing the device structures. The main steps include 1) assembling a porous structure or a framework with semiconductor materials of one conduction type on a first electrode, 2) filling pores or coating the framework made from the materials in step 1 with semiconductors or precursors of conducting polymer of a opposite conduction type, 3) chemically and physically treating the system to form closed packed multi-PN channels.

Abstract: As the basic building block of microwave and millimeter wave units and circuits, the microwave switch must fulfill several requirements including low insertion loss, high isolation and small dimensions. For conventional electrostatically actuated microwave MEMS switches, the isolation between DC and RF is achieved using an RF choke. In this invention, a miniature electrostatically actuated microwave switch with a cantilever and employing two resistive lines on a first substrate and act as the actuation electrodes is provided. The resistive lines as the actuation electrodes according to this invention allows one to minimize the switch dimensions, to facilitate the integration and minimize the interference of the propagating microwave or millimeter wave signals.

Abstract: This invention discloses methods for the fabrication of organic semiconductor material-based devices under non-vacuum environment. In one embodiment, electrodes are formed by electrodeposition from an electrolyte containing ions or complexes of the electrode materials to be deposited. In another embodiment, electrodes are formed by solution processing from a solution (or ink) containing nano-particle of the electrode materials or the precursor of electrode materials to be deposited. In addition, two different modes, either layer by layer or layer to layer, are disclosed for the fabrication of organic semiconductor material-based devices, wherein all semiconductor organic materials required by the function of the desired device are deposited under an non-vacuum environment.

Abstract: This invention discloses structures of organic materials-based semiconductor devices and methods for the fabrication of such devices. According to this invention, each of the devices has a first part and a second part. The first part has at least a first organic semiconductor material layer deposited on a first electrode and the second part has at least a second organic semiconductor material layer deposited on a second electrode. Said device is formed by assembling the two individual parts together. Each part maybe fabricated separately and consists of an electrode coated with semiconductor organic materials required by the function of the desired device. A schematic diagram in the FIG. 3 shows a first part (11) consisting of a first substrate (13), a first electrode (14) and at least one layer of organic materials (15); the second part (12) of the device consisting of the second substrate (16), a second electrode (17) with at least a layer of organic materials (18).

Abstract: The present invention discloses methods to remove impurities in polymeric materials in order to improve the opto-electronic characteristics of devices fabricated from these polymers. The polymers include but not limited to polyarylenes, polyarylenevinylenes, polyaryleneethylnylene, polyfluorenes, polyanilines, polythiophenes, polypyrroles, and any conjugated co-polymers. The methods involve the selection of a scavenger or chelating agent and use it to remove metallic impurities from the polymers. The methods involve dissolving the polymer in a suitable solvent, adding a scavenger, mixing to form a scavenger containing phase, and finally separating the scavenger containing phase from the polymer phase. According to this invention, it is preferable for the selected scavengers to have functional groups which can chemically react with metallic species and form a coordination compound that is not soluble in a selected solvent.