Abstract: A thin film transistor and a manufacturing method thereof, an array substrate and a display device are provided. The method includes forming a gate electrode, a gate insulating layer, a metal oxide semiconductor (MOS) active layer, a source electrode and a drain electrode on a substrate. The MOS active layer includes forming a pattern layer of indium oxide series binary metal oxide including a first, second, and third pattern directly contacting with the source electrode and the drain electrode. An insulating layer formed over the source electrode and the drain electrode acts as a protection layer, the pattern layer of indium oxide series binary metal oxide is implanted with metal doping ions by using an ion implanting process, and is annealed, so that the indium oxide series binary metal oxide of the third pattern is converted into the indium oxide series multiple metal oxide to form the MOS active layer.

Abstract: Disclosed are an OLED backplane and fabrication method. The fabrication method comprises: forming a pattern including a TFT on a substrate; forming a passivation layer on the substrate including the TFT pattern; forming a color filter on the substrate including the passivation layer; forming a resin layer on the substrate including the color filter; heavily doping the resin layer of a first region in each sub-pixel on the substrate including the resin layer, the resin layer in the first region being conductive, the first region including a passivation layer via-hole region, a pixel electrode region and a connecting region between the passivation layer via-hole region and the pixel electrode region, the passivation-layer via-hole region being a position where a drain electrode of the TFT is located; and forming an organic light-emitting layer and a cathode sequentially on the substrate after the resin layer of the first region is heavily doped.

Abstract: Embodiments of the present invention provide a thin film transistor, method for fabricating the thin film transistor and display apparatus. The method includes steps of: forming an active layer pattern which has a mobility greater than a predetermined threshold from an active layer material; and performing ion implantation on the active layer pattern. The energy of a compound bond formed from the implanted ions is greater than that of a compound bond formed from ions in the active layer material, thereby reducing the chance of vacancy formation and reducing the carrier concentration. Therefore, the mobility of the active layer surface is reduced, the leakage current is reduced, the threshold voltage is adjusted to shift toward positive direction and performance of the thin film transistor is improved.

Abstract: There are provided a thin film transistor and a manufacturing method thereof, an array substrate, a display device. The manufacturing method includes forming a gate electrode, a gate insulating layer, a metal oxide semiconductor active layer, a source electrode and a drain electrode on a substrate. The forming the metal oxide semiconductor active layer includes forming a zinc oxide-based binary metal oxide pattern layer on a substrate. The pattern layer includes a first pattern, a second pattern and a third pattern. Metal doping ions are implanted into the zinc oxide-based binary metal oxide pattern layer by using an ion implantation technology, so that a binary metal oxide of the third pattern is transformed into a multi-element metal oxide semiconductor, and the metal oxide semiconductor active layer is formed.

Abstract: The present invention provides an array substrate and a manufacturing method thereof, a display panel and a display device. The array substrate includes a plurality of pixel units, each of which includes: a TFT area provided with a TFT including a gate, a gate insulation layer, an active area, a source and a drain; and a display area provided with a pixel electrode.

Abstract: A thin-film transistor (TFT), a preparation method thereof, an array substrate and a display device are disclosed. The TFT disclosed in the present invention includes a source electrode, a drain electrode, a semiconductor layer, a gate electrode and a gate insulating layer and further includes: a source conductive layer and a drain conductive layer which are disposed on the surface of the semiconductor layer and spaced from each other. The source conductive layer is connected with the source electrode; the drain conductive layer is connected with the drain electrode; and the minimum distance between the source conductive layer and the drain conductive layer is less than the minimum distance between the source electrode and the drain electrode. The TFT is applicable to a display device, in particular, to a LCD or OLED.

Abstract: An organic electroluminescence array substrate, a manufacturing method thereof and a display device are provided, and the organic electroluminescence array substrate an active backplane and a color display layer formed on the active backplane, wherein the color display layer includes a plurality of pixel units; and each pixel unit includes a red sub-pixel, a green sub-pixel and a blue sub-pixel. Both an area of the red sub-pixel and an area of the green sub-pixel are less than an area of the blue sub-pixel. The organic electroluminescence array substrate has increased aperture ratio thereof.

Abstract: An apparatus and method for coating an organic film are disclosed. The apparatus comprises an evaporation device, an electron emission device and a spray device; wherein the evaporation device comprises an evaporation container, the evaporation container is a linear evaporation container, in which a uniform organic gas is generated; the electron emission device is horizontally arranged over the evaporation container such that the organic gas evaporated in the evaporation container is uniformly charged and becomes charged organic gas; the spray device is provided with an electric field, under which the charged organic gas is moved toward a substrate so as to deposit the organic film on the substrate.

Abstract: The application discloses a pixel driving circuit and a fabrication method thereof as well as an array substrate, the pixel driving circuit including a switching and a driving TFT, the method including: on a substrate, fabricating a gate, a gate insulation GI layer, an oxide semiconductor layer, and an etching stop ESL layer simultaneously in turn; depositing simultaneously source/drain metals of the switching TFT and the driving TFT, the drain metal of the switching TFT extending and covering the GI layer on the gate of the driving TFT by etching; depositing a protection layer; etching off the protection layer, the drain metal of the switching TFT and the GI layer at a via hole by using a via hole process, to expose the gate of the driving TFT; depositing an ITO layer connecting the drain of the switching TFT and the gate of the driving TFT at the via hole.

Abstract: A thin film transistor (TFT) and manufacturing method thereof, an array substrate and a display device are provided. The thin film transistor comprises a substrate; an active layer formed on the substrate; a first conductive contact layer and a second conductive contact layer formed on the active layer; an etch-stop layer formed over the first contact layer and the second contact layer; and a source connected with the first contact layer, a drain connected with the second contact layer and a gate arranged between the source and the drain formed over the etch-stop layer. The TFT has a simple structure and better performance.

Abstract: The present disclosure relates to a driving apparatus, an OLED (Organic Light-Emitting Diode) panel, and a method for driving the OLED panel. The driving apparatus can be integrated on a substrate of pixel circuits and is capable of providing fast and stable current driving. The driving apparatus includes a switching module for selecting a voltage signal according to a received clock signal; a conversion module for converting the voltage signal into a current signal; and an output module for outputting the voltage signal or the converted current signal to drive a pixel circuit array, wherein the switching module is connected to the conversion module and the output module, and the conversion module is connected to the switching module and the output module.

Abstract: A light-emitting diode (LED) display substrate, a method for manufacturing the same, and a display device are provided and involve the display field. The method for manufacturing the LED display substrate comprises: forming a transparent conductive anode (201) on a substrate (200); forming a pixel region defined by a first PDL (202) and a second PDL (203) on the substrate (200) on which the anode (201) is formed, in which the second PDL (203) made of a hydrophobic material is disposed on the first PDL (201) made of a hydrophilic material; filling a luminescent material into the pixel region to form an emission layer (204) with the luminescent material; and forming a conductive cathode (205) on the substrate (200) on which the emission layer (204) is formed. The manufacturing method allows the luminescent materials to be flatly laid on the LED display substrate so as to improve the luminous quality of the LED display substrate.

Abstract: A pixel define layer (PDL) of an organic light-emitting diode (OLED) display panel, which comprises a first PDL (21) and a second PDL (22) overlapped on the first PDL. The first PDL (21) is a hydrophobic film layer provided with openings (210) corresponding to luminous regions of sub-pixel units; and the second PDL (22) is a hydrophilic film layer provided with openings (220) corresponding to the openings (210) of the first PDL. The PDL can avoid the mutual pollution of organic light-emitting materials in luminous regions of different colors in adjacent sub-pixel units in the preparation process.

Abstract: The present invention discloses a light-emitting display backplane, a display device and a manufacturing method of a pixel define layer. A light-emitting display backplane according to the present invention comprises: a substrate and a pixel define layer provided thereon, wherein said pixel define layer comprises: a first photosensitive resin layer, a first transparent define layer and a second transparent define layer sequentially provided on said substrate from bottom to top, each of the first photosensitive resin layer, the first define layer and the second define layer is provided with openings corresponding to respective pixels, and the openings in said second define layer are smaller than those in both said first define layer and said first photosensitive resin layer, so as to form luminescent material filling regions which are wider at bottom and narrower at top.

Abstract: Embodiments of the invention provide a thin film transistor, a method of manufacturing the same, an array substrate comprising the thin film transistor and a display device. The method of manufacturing the thin film transistor comprises steps of forming a gate electrode (220), a gate insulating layer (230), an oxide active layer (240), a source electrode (260) and a drain electrode (270) on a substrate (210). After forming the oxide active layer (240), the method further comprises a step of forming an etch barrier layer (250) of a metal oxide on the oxide active layer (240).

Abstract: Embodiments of the disclosed technology relate to a method for manufacturing a thin film transistor (TFT) with a polysilicon active layer comprising: depositing an amorphous silicon layer on a substrate, and patterning the amorphous silicon layer so as to form an active layer comprising a source region, a drain region and a channel region; depositing an inducing metal layer on the source region and the drain region; performing a first thermal treatment on the active layer provided with the inducing metal layer so that the active layer is crystallized under the effect of the inducing metal; doping the source region and the drain region with a first impurity for collecting the inducing metal; and performing a second thermal treatment on the doped active layer so that the first impurity absorbs the inducing metal remained in the channel region.

Abstract: An apparatus and method for coating an organic film are disclosed. The apparatus comprises an evaporation device, an electron emission device and a spray device; wherein the evaporation device comprises an evaporation container, the evaporation container is a linear evaporation container, in which a uniform organic gas is generated; the electron emission device is horizontally arranged over the evaporation container such that the organic gas evaporated in the evaporation container is uniformly charged and becomes charged organic gas; the spray device is provided with an electric field, under which the charged organic gas is moved toward a substrate so as to deposit the organic film on the substrate.

Abstract: Embodiments of the present invention provide a method for manufacturing a transistor, a transistor, an array substrate and a display device. The method comprises: forming a first source/drain metal layer on a substrate; forming an insulating layer above the first source/drain metal layer; forming a gate metal layer on the insulating layer; forming a gate insulating layer on the gate metal layer; forming a semiconductor layer above the gate insulating layer; forming an etching blocking layer on the semiconductor layer; forming a second source/drain metal layer above the etching blocking layer; forming an insulating layer above the second source/drain metal layer.

Abstract: An anti-diffusion layer, a preparation method thereof, a thin-film transistor (TFT), an array substrate and a display device are provided, involve the display device manufacturing field and can resolve problem that a high atmosphere temperature is need in process of preparing a tantalum dioxide anti-diffusion layer by PVD or CVD, which causes the gate electrode to volatilize and affect the performance of a display device. The method for preparing the anti-diffusion layer comprises: placing a conductive base (1) and a cathode (4) in a tantalum sulfate solution (3), taking the conductive base (1) as an anode, and forming a tantalum dioxide anti-diffusion layer on the conductive base (1) after energizing.

Abstract: An embodiment of the present invention provides a thin film transistor and a manufacturing method thereof and an array substrate comprising the thin film transistor.