Patents by Inventor Chwen Yu
Chwen Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9214212Abstract: A magnetic-assist, spin-torque transfer magnetic tunnel junction device and a method for performing a magnetic-assist, spin-torque-transfer write to the device are disclosed. In an exemplary embodiment, the magnetic tunnel junction device includes a first electrode, a pinned layer disposed on the first electrode, a free layer disposed on the pinned layer, and a barrier layer disposed between the pinned layer and the free layer. The device further includes a second electrode electrically coupled to the free layer, the second electrode containing a magnetic assist region. In some embodiments, the magnetic assist region is configured to produce a net magnetic field when supplied with a write current. The net magnetic field is aligned to assist a spin-torque transfer of the write current on the free layer.Type: GrantFiled: December 3, 2012Date of Patent: December 15, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventor: Chwen Yu
-
Patent number: 8952330Abstract: System and method for EMI shielding for a CD-SEM are described. One embodiment is a scanning electron microscope (“SEM”) comprising an electron gun for producing an electron beam directed toward a sample; a secondary electron (“SE”) detector for detecting secondary electrons reflected from the sample in response to the electron beam; and a dual-layer shield disposed around and enclosing the SE detector. The shield comprises a magnetic shielding lamina layer and a metallic foil layer.Type: GrantFiled: January 17, 2014Date of Patent: February 10, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Chi Tsao, Syun-Jie Jhan, Yi-Cheng Shih, Chwen Yu
-
Patent number: 8884386Abstract: A magnetoresistive random access memory (MRAM) device and a method of manufacture are provided. The MRAM device comprises a magnetic pinned layer, a compound GMR structure acting as a free layer, and a non-magnetic barrier layer separating the pinned and GMR layers. The barrier layer is provided to reduce the magnetic coupling of the free layer and GMR structure, as well as provide a resistive state (high or low) for retaining binary data (0 or 1) in the device. The GMR structure provides physical electrode connectivity for set/clear memory functionality which is separated from the physical electrode connectivity for the read functionality for the memory device.Type: GrantFiled: February 2, 2012Date of Patent: November 11, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tien-Wei Chiang, Chwen Yu, Ya-Chen Kao
-
Publication number: 20140252513Abstract: A Magnetoresistive Tunnel Junction (MTJ) device includes an elongated MTJ structure formed onto a substrate, the MTJ structure including a magnetic reference layer and a tunnel barrier layer. The MTJ device also includes a number of discrete free magnetic regions disposed onto the tunnel barrier layer. The ratio of length to width of the elongated MTJ structure is such that the magnetic field of the magnetic reference layer is pinned in a single direction.Type: ApplicationFiled: March 9, 2013Publication date: September 11, 2014Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chwen Yu, Kai-Wen Cheng, Tien-Wei Chiang, Dong Cheng Chen
-
Publication number: 20140153324Abstract: A magnetic-assist, spin-torque transfer magnetic tunnel junction device and a method for performing a magnetic-assist, spin-torque-transfer write to the device are disclosed. In an exemplary embodiment, the magnetic tunnel junction device includes a first electrode, a pinned layer disposed on the first electrode, a free layer disposed on the pinned layer, and a barrier layer disposed between the pinned layer and the free layer. The device further includes a second electrode electrically coupled to the free layer, the second electrode containing a magnetic assist region. In some embodiments, the magnetic assist region is configured to produce a net magnetic field when supplied with a write current. The net magnetic field is aligned to assist a spin-torque transfer of the write current on the free layer.Type: ApplicationFiled: December 3, 2012Publication date: June 5, 2014Applicant: Taiwan Semiconductor Manufacturing Company, LTDInventor: Chwen Yu
-
Publication number: 20140131652Abstract: A Magnetoresistive Tunnel Junction (MTJ) includes a magnetic reference layer disposed between a first electrode and a resistive layer. The junction also includes a magnetic free layer disposed between the resistive layer and a second electrode. The surface area of the free layer is less than the surface area of the reference layer.Type: ApplicationFiled: November 13, 2012Publication date: May 15, 2014Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventor: Chwen Yu
-
Publication number: 20140124667Abstract: System and method for EMI shielding for a CD-SEM are described. One embodiment is a scanning electron microscope (“SEM”) comprising an electron gun for producing an electron beam directed toward a sample; a secondary electron (“SE”) detector for detecting secondary electrons reflected from the sample in response to the electron beam; and a dual-layer shield disposed around and enclosing the SE detector. The shield comprises a magnetic shielding lamina layer and a metallic foil layer.Type: ApplicationFiled: January 17, 2014Publication date: May 8, 2014Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Chi Tsao, Syun-Jie Jhan, Yi-Cheng Shih, Chwen Yu
-
Patent number: 8709267Abstract: Methods for patterning material layers, which may be implemented in forming integrated circuit device features, are disclosed. In an example, a method includes forming a first resist layer over a material layer; forming a second resist layer over the first resist layer; forming an opening that extends through the second resist layer and the first resist layer to expose the material layer, wherein the opening has a substantially constant width in the second resist layer and a tapered width in the first resist layer; and performing a tilt-angle deposition process to form a feature over the exposed material layer.Type: GrantFiled: July 21, 2011Date of Patent: April 29, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chwen Yu, Fei-Gwo Tsai, Kai-Wen Cheng
-
Patent number: 8633439Abstract: System and method for EMI shielding for a CD-SEM are described. One embodiment is a scanning electron microscope (“SEM”) comprising an electron gun for producing an electron beam directed toward a sample; a secondary electron (“SE”) detector for detecting secondary electrons reflected from the sample in response to the electron beam; and a dual-layer shield disposed around and enclosing the SE detector. The shield comprises a magnetic shielding lamina layer and a metallic foil layer.Type: GrantFiled: July 1, 2011Date of Patent: January 21, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Chi Tsao, Syun-Jie Jhan, Yi-Cheng Shih, Chwen Yu
-
Patent number: 8629356Abstract: A magnetic field shielding raised floor panel having a plurality of grain-oriented electrical steel (GOES) sections. The orientation of each GOES section is parallel to a top surface of the section. The plurality of GOES sections can include sidewall and lip portions. The plurality of GOES sections can be perforated to permit air flow through the GOES section. Openings in adjacent perforated GOES sections do not substantially overlap.Type: GrantFiled: December 16, 2011Date of Patent: January 14, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chwen Yu, Yung-Ti Hung, Kuo-An Yeh, Tzu-Sou Chuang, Chien-Teh Huang
-
Patent number: 8624338Abstract: An apparatus, method for manufacturing the apparatus, and method for processing a substrate using the apparatus are disclosed. An exemplary apparatus includes a substrate having a plurality of cells, wherein each cell includes a cell structure. The cell structure includes a piezoelectric film portion and a tip disposed over the piezoelectric film portion. The tip is physically coupled with the piezoelectric film portion.Type: GrantFiled: May 5, 2011Date of Patent: January 7, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Fei-Gwo Tsai, Chwen Yu
-
Publication number: 20130228882Abstract: Methods and apparatuses for a magnetic tunnel junction (MTJ) which can be used in as a magnetic random access memory cell are disclosed. The MTJ comprises a free layer and an insulator layer. The MTJ further comprises a pinned layer with a first region, a second region, and a third region. The second region is of a first length and of a first thickness, and the first region and the third region are of a second length and of a second thickness. A ratio of the first thickness to the second thickness may be larger than 1.2. A ratio of the second length to the first length is larger than 0.5. The first thickness may be larger than a spin diffusion length of a material for the pinned layer. So formed MTJ results in increased tunneling magnetic resistance ratio and reduced critical switch current of the MTJ.Type: ApplicationFiled: March 2, 2012Publication date: September 5, 2013Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Wen Cheng, Chwen Yu, Chih-Ming Chen
-
Publication number: 20130200475Abstract: A magnetoresistive random access memory (MRAM) device and a method of manufacture are provided. The MRAM device comprises a magnetic pinned layer, a compound GMR structure acting as a free layer, and a non-magnetic barrier layer separating the pinned and GMR layers. The barrier layer is provided to reduce the magnetic coupling of the free layer and GMR structure, as well as provide a resistive state (high or low) for retaining binary data (0 or 1) in the device. The GMR structure provides physical electrode connectivity for set/clear memory functionality which is separated from the physical electrode connectivity for the read functionality for the memory device.Type: ApplicationFiled: February 2, 2012Publication date: August 8, 2013Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tien-Wei Chiang, Chwen Yu, Ya-Chen Kao
-
Patent number: 8477531Abstract: A semiconductor memory device includes a magnetic tunneling junction (MTJ); and a magnetic feature aligned with the MTJ and approximate the MTJ. When viewed in a direction perpendicular to the MTJ and the magnetic feature, the magnetic feature has a disk shape, and the MTJ has an elliptical shape and is positioned within the disk shape.Type: GrantFiled: December 15, 2010Date of Patent: July 2, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chwen Yu, Tien-Wei Chiang
-
Patent number: 8471598Abstract: The present disclosure provides for magnetic logic devices and methods of operating such a device. In one embodiment, the device includes a bottom electrode configured to receive a first input current and a second input current, a bottom magnetic layer disposed over the bottom electrode, a nonmagnetic layer disposed over the bottom magnetic layer, a top magnetic layer disposed over the nonmagnetic layer, and a top electrode disposed over the top magnetic layer, the top electrode and the bottom electrode configured to provide an output voltage which is dependent on the first and second input currents and which follows an AND gate logic or an OR gate logic.Type: GrantFiled: June 16, 2011Date of Patent: June 25, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chwen Yu, Kai-Wen Cheng, Tien-Wei Chiang
-
Publication number: 20130153285Abstract: A magnetic field shielding raised floor panel having a plurality of grain-oriented electrical steel (GOES) sections. The orientation of each GOES section is parallel to a top surface of the section. The plurality of GOES sections can include sidewall and lip portions. The plurality of GOES sections can be perforated to permit air flow through the GOES section. Openings in adjacent perforated GOES sections do not substantially overlap.Type: ApplicationFiled: December 16, 2011Publication date: June 20, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chwen YU, Yung-Ti HUNG, Kuo-An YEH, Tzu-Sou CHUANG, Chien-Teh HUANG
-
Publication number: 20130146996Abstract: The present disclosure provides for magnetic devices and methods of fabricating such a device. In one embodiment, a magnetic device includes a first elliptical pillar of first material layers; a second elliptical pillar concentrically disposed over the first elliptical pillar, the second elliptical pillar includes second material layers. The second elliptical pillar is smaller than the first elliptical pillar in size.Type: ApplicationFiled: December 8, 2011Publication date: June 13, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chwen Yu, Tien-Wei Chiang, Kai-Wen Cheng
-
Publication number: 20130023121Abstract: Methods for patterning material layers, which may be implemented in forming integrated circuit device features, are disclosed. In an example, a method includes forming a first resist layer over a material layer; forming a second resist layer over the first resist layer; forming an opening that extends through the second resist layer and the first resist layer to expose the material layer, wherein the opening has a substantially constant width in the second resist layer and a tapered width in the first resist layer; and performing a tilt-angle deposition process to form a feature over the exposed material layer.Type: ApplicationFiled: July 21, 2011Publication date: January 24, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chwen Yu, Fei-Gwo Tsai, Kai-Wen Cheng
-
Publication number: 20130001419Abstract: System and method for EMI shielding for a CD-SEM are described. One embodiment is a scanning electron microscope (“SEM”) comprising an electron gun for producing an electron beam directed toward a sample; a secondary electron (“SE”) detector for detecting secondary electrons reflected from the sample in response to the electron beam; and a dual-layer shield disposed around and enclosing the SE detector. The shield comprises a magnetic shielding lamina layer and a metallic foil layer.Type: ApplicationFiled: July 1, 2011Publication date: January 3, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chia-Chi Tsao, Syun-Jie Jhan, Yi-Cheng Shih, Chwen Yu
-
Publication number: 20120319732Abstract: The present disclosure provides for magnetic logic devices and methods of operating such a device. In one embodiment, the device includes a bottom electrode configured to receive a first input current and a second input current, a bottom magnetic layer disposed over the bottom electrode, a nonmagnetic layer disposed over the bottom magnetic layer, a top magnetic layer disposed over the nonmagnetic layer, and a top electrode disposed over the top magnetic layer, the top electrode and the bottom electrode configured to provide an output voltage which is dependent on the first and second input currents and which follows an AND gate logic or an OR gate logic.Type: ApplicationFiled: June 16, 2011Publication date: December 20, 2012Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chwen Yu, Kai-Wen Cheng, Tai-Wei Chiang