Abstract: An integrated circuit device is provided. In some examples, an integrated circuit die of the device includes a first capacitor arranged such that when the integrated circuit die is coupled to a package, the package affects a capacitance of the first capacitor, a second capacitor disposed directly underneath the first capacitor, and a capacitance measurement circuit coupled to the first capacitor and the second capacitor to determine the capacitance of the first capacitor and a capacitance of the second capacitor. The integrated circuit device may detect tampering with the die and/or the package based on the capacitances of the first capacitor and the second capacitor.

Abstract: A flow meter ultrasonically measures fluid velocity in a pipe and ultrasonically transmits fluid flow data along the pipe. An ultrasonic transducer used for fluid velocity measurement may optionally also be used for communication of flow data, and optionally, the ultrasonic frequency for fluid velocity measurement may be the same as the ultrasonic frequency for communication of flow data.

Abstract: Methods and apparatus for creating a physically unclonable function for SRAM are disclosed. An example method includes decreasing a supply voltage of a memory array to a first voltage level, the first voltage level being below a normal operating voltage associated with the memory array, reading a first value of a bit cell after the supply voltage has been at the first voltage level, and determining a function based on the first value of the bit cell and a second value, the second value stored in the bit cell when the memory array is operating at a voltage level above the first voltage level, the function to represent an identification of a circuit including the memory array.

Abstract: A flow meter ultrasonically measures fluid velocity in a pipe and ultrasonically transmits fluid flow data along the pipe. An ultrasonic transducer used for fluid velocity measurement may optionally also be used for communication of flow data, and optionally, the ultrasonic frequency for fluid velocity measurement may be the same as the ultrasonic frequency for communication of flow data.

Abstract: Methods and apparatus for creating a physically unclonable function for SRAM are disclosed. An example method includes decreasing a supply voltage of a memory array to a first voltage level, the first voltage level being below a normal operating voltage associated with the memory array, reading a first value of a bit cell after the supply voltage has been at the first voltage level, and determining a function based on the first value of the bit cell and a second value, the second value stored in the bit cell when the memory array is operating at a voltage level above the first voltage level, the function to represent an identification of a circuit including the memory array.

Abstract: An integrated circuit device is provided. In some examples, an integrated circuit die of the device includes a first capacitor arranged such that when the integrated circuit die is coupled to a package, the package affects a capacitance of the first capacitor, a second capacitor disposed directly underneath the first capacitor, and a capacitance measurement circuit coupled to the first capacitor and the second capacitor to determine the capacitance of the first capacitor and a capacitance of the second capacitor. The integrated circuit device may detect tampering with the die and/or the package based on the capacitances of the first capacitor and the second capacitor.

Abstract: Methods and apparatus for creating a physically unclonable function for SRAM are disclosed. An example method includes decreasing a supply voltage of a memory array to a first voltage level, the first voltage level being below a normal operating voltage associated with the memory array, reading a first value of a bit cell after the supply voltage has been at the first voltage level, and determining a function based on the first value of the bit cell and a second value, the second value stored in the bit cell when the memory array is operating at a voltage level above the first voltage level, the function to represent an identification of a circuit including the memory array.

Abstract: A flow meter ultrasonically measures fluid velocity in a pipe and ultrasonically transmits fluid flow data along the pipe. An ultrasonic transducer used for fluid velocity measurement may optionally also be used for communication of flow data, and optionally, the ultrasonic frequency for fluid velocity measurement may be the same as the ultrasonic frequency for communication of flow data.

Abstract: A system for error correction code (ECC) management of write-once memory (WOM) codes includes, for example, a controller for selecting between one of a WOM (Write-Once Memory) mode and an ECC (error correction code) mode. A codec is arranged to operate in the selected mode. The codec while operating in the ECC mode is arranged to identify a bit position of at least one bit error in response to ECC parity bits of a first received data word. The codec while operating in the WOM mode is arranged to receive a WOM-encoded word from an addressed location in a WOM device, to receive a second received data word to be encoded and written to the addressed location, and to generate WOM-encoded word for writing to the addressed location in the WOM device. The WOM-encoded word for writing to the addressed location is optionally ECC encoded.

Abstract: Read-only (“RO”) data consisting of a physically unclonable function (“PUF”) pattern is written to a ferroelectric random-access memory (“FRAM”) memory array. The FRAM array is baked to imprint the PUF pattern with a selected average depth of imprint and a corresponding average read reliability. The average depth of imprint and corresponding average read reliability are determined during testing after baking. The PUF pattern as read after baking is compared to the PUF pattern as written prior to baking. Additional PUF pattern writing and baking cycles may be performed until the average depth of imprint and associated read reliability reach a first selected level. Integrated circuits determined to be over-imprinted by exceeding a second selected level may be rejected. The first and second levels of PUF pattern imprint are selected such as to produce FRAM arrays with a unique fingerprint for each individual FRAM array-containing integrated circuit.

Abstract: A flow meter ultrasonically measures fluid velocity in a pipe and ultrasonically transmits fluid flow data along the pipe. An ultrasonic transducer used for fluid velocity measurement may optionally also be used for communication of flow data, and optionally, the ultrasonic frequency for fluid velocity measurement may be the same as the ultrasonic frequency for communication of flow data.

Abstract: Disclosed embodiments include an electronic device having a write-once memory (WOM) and a memory controller. The memory controller includes a host interface receiving a data word including first and second symbols, each having at least two bits, a WOM controller that encodes the first and second symbols and outputs a WOM-encoded word including first and second WOM codes corresponding to the first and second symbols, respectively, an error correction code (ECC) controller that encodes the WOM-encoded word and outputs an ECC-encoded word including the first and second WOM codes and a first set of ECC bits corresponding to a first write operation, and a memory device interface that writes the ECC-encoded word the WOM device in the first write operation. Each of the first and second WOM codes include at least three bits with at least two of the at least three bits having the same logic value.

Abstract: Read-only (“RO”) data consisting of a physically unclonable function (“PUF”) pattern is written to a ferroelectric random-access memory (“FRAM”) memory array. The FRAM array is baked to imprint the PUF pattern with a selected average depth of imprint and a corresponding average read reliability. The average depth of imprint and corresponding average read reliability are determined during testing after baking. The PUF pattern as read after baking is compared to the PUF pattern as written prior to baking. Additional PUF pattern writing and baking cycles may be performed until the average depth of imprint and associated read reliability reach a first selected level. Integrated circuits determined to be over-imprinted by exceeding a second selected level may be rejected. The first and second levels of PUF pattern imprint are selected such as to produce FRAM arrays with a unique fingerprint for each individual FRAM array-containing integrated circuit.

Abstract: Methods and apparatus for creating a physically unclonable function for SRAM are disclosed. An example method includes after applying a voltage to a memory array: determining a first duration between the applying of the voltage and a first output of a first bit cell, the first output corresponding to a first value stored in the first bit cell, and determining a second duration between the applying of the voltage and a second output of a second bit cell, the second output corresponding to a second value stored in the second bit cell. The example method further includes determining a function based on a comparison of the first duration and the second duration, the function to establish an identification of a circuit that includes the memory array.

Abstract: Read-only (“RO”) data consisting of a physically unclonable function (“PUF”) pattern is written to a ferroelectric random-access memory (“FRAM”) memory array. The FRAM array is baked to imprint the PUF pattern with a selected average depth of imprint and a corresponding average read reliability. The average depth of imprint and corresponding average read reliability are determined during testing after baking. The PUF pattern as read after baking is compared to the PUF pattern as written prior to baking. Additional PUF pattern writing and baking cycles may be performed until the average depth of imprint and associated read reliability reach a first selected level. Integrated circuits determined to be over-imprinted by exceeding a second selected level may be rejected. The first and second levels of PUF pattern imprint are selected such as to produce FRAM arrays with a unique fingerprint for each individual FRAM array-containing integrated circuit.

Abstract: Methods and apparatus for creating a physically unclonable function for SRAM are disclosed. An example method includes after applying a voltage to a memory array: determining a first duration between the applying of the voltage and a first output of a first bit cell, the first output corresponding to a first value stored in the first bit cell, and determining a second duration between the applying of the voltage and a second output of a second bit cell, the second output corresponding to a second value stored in the second bit cell. The example method further includes determining a function based on a comparison of the first duration and the second duration, the function to establish an identification of a circuit that includes the memory array.

Abstract: Methods and apparatus for creating a physically unclonable function for SRAM are disclosed. An example method includes after applying a voltage to a memory array: determining a first duration between the applying of the voltage and a first output of a first bit cell, the first output corresponding to a first value stored in the first bit cell, and determining a second duration between the applying of the voltage and a second output of a second bit cell, the second output corresponding to a second value stored in the second bit cell. The example method further includes determining a function based on a comparison of the first duration and the second duration, the function to establish an identification of a circuit that includes the memory array.

Abstract: Disclosed embodiments include an electronic device having a write-once memory (WOM) and a memory controller. The memory controller includes a host interface receiving a data word including first and second symbols, each having at least two bits, a WOM controller that encodes the first and second symbols and outputs a WOM-encoded word including first and second WOM codes corresponding to the first and second symbols, respectively, an error correction code (ECC) controller that encodes the WOM-encoded word and outputs an ECC-encoded word including the first and second WOM codes and a first set of ECC bits corresponding to a first write operation, and a memory device interface that writes the ECC-encoded word the WOM device in the first write operation. Each of the first and second WOM codes include at least three bits with at least two of the at least three bits having the same logic value.

Abstract: A system for error correction code (ECC) management of write-once memory (WOM) codes includes, for example, a controller for selecting between one of a WOM (Write-Once Memory) mode and an ECC (error correction code) mode. A codec is arranged to operate in the selected mode. The codec while operating in the ECC mode is arranged to identify a bit position of at least one bit error in response to ECC parity bits of a first received data word. The codec while operating in the WOM mode is arranged to receive a WOM-encoded word from an addressed location in a WOM device, to receive a second received data word to be encoded and written to the addressed location, and to generate WOM-encoded word for writing to the addressed location in the WOM device. The WOM-encoded word for writing to the addressed location is optionally ECC encoded.

Abstract: A system for error correction code (ECC) management of write-once memory (WOM) codes includes, for example, a host processor is arranged to send a data word that is to be stored in a WOM (Write-Once Memory) device. A host interface is arranged to receive the first data word for processing by a WOM controller and an ECC controller. The WOM controller is for generating a first WOM-encoded word in response to an original symbol of the first data word, while the ECC controller is for generating a first set of ECC bits in response to the original symbol of the first data word. A memory device interface is for writing the first WOM-encoded word and the first set of ECC bits to the WOM device in accordance with the memory address associated with the first data word.