Abstract: Data words to be written to a memory location are delta encoded in multi-write avoidance (“MWA”) code words. MWA code words result in no re-writing of single-bit storage cells containing logical “0's” to a “0” state and no re-writing of logical “1's” to cells that have already been written once to a logical “1.” Potential MWA code words stored in a look-up table (“LUT”) are indexed by a difference word DELTA_D. DELTA_D represents a bitwise difference (“delta”) between a data word currently stored at the memory location and a new data word (“NEW_D”) to be stored at the memory location. Validation and selection logic chooses an MWA code word representing NEW_D to be written if the MWA code word does not violate the principle of multi-write avoidance. Some embodiments generate the MWA code words using a pattern generator rather than indexing the MWA code words from a LUT.

Abstract: A system for write-once memory (WOM) code emulation of EEPROM-type devices includes, for example, a host processor for sending data words for storing in a WOM (Write-Only Memory) device. A host interface receives the data words for encoding by a WOM controller. An emulator programs the WOM-encoded data and an address identifier as an entry of the WOM device. The emulator overwrites previously programmed WOM-encoded data by searching entries of a current active page of a WOM device to locate a programmed WOM entry that includes the searched-for address identifier and the previously written WOM-encoded data word. When the previously written WOM-encoded word cannot be correctly overwritten, the contents of the second WOM-encoded word are stored in a new entry. When the current active page is substantially full, the new entry is stored a new page and the current active page is block-erased.

Abstract: Methods and apparatus for creating a physically unclonable function for SRAM are disclosed. An example method includes decreasing a supply voltage of a memory array to a first voltage level, the first voltage level being below a normal operating voltage associated with the memory array, reading a first value of a bit cell after the supply voltage has been at the first voltage level, and determining a function based on the first value of the bit cell and a second value, the second value stored in the bit cell when the memory array is operating at a voltage level above the first voltage level, the function to represent an identification of a circuit including the memory array.

Abstract: Methods and apparatus for creating a physically unclonable function for SRAM are disclosed. An example method includes after applying a voltage to a memory array: determining a first duration between the applying of the voltage and a first output of a first bit cell, the first output corresponding to a first value stored in the first bit cell, and determining a second duration between the applying of the voltage and a second output of a second bit cell, the second output corresponding to a second value stored in the second bit cell. The example method further includes determining a function based on a comparison of the first duration and the second duration, the function to establish an identification of a circuit that includes the memory array.

Abstract: Read-only (“RO”) data consisting of a physically unclonable function (“PUF”) pattern is written to a ferroelectric random-access memory (“FRAM”) memory array. The FRAM array is baked to imprint the PUF pattern with a selected average depth of imprint and a corresponding average read reliability. The average depth of imprint and corresponding average read reliability are determined during testing after baking The PUF pattern as read after baking is compared to the PUF pattern as written prior to baking Additional PUF pattern writing and baking cycles may be performed until the average depth of imprint and associated read reliability reach a first selected level. Integrated circuits determined to be over-imprinted by exceeding a second selected level may be rejected. The first and second levels of PUF pattern imprint are selected such as to produce FRAM arrays with a unique fingerprint for each individual FRAM array-containing integrated circuit.

Abstract: Read-only (“RO”) data to be permanently imprinted in storage cells of a memory array are written to the memory array. One or more over-stress conditions such as heat, over-voltage, over-current and/or mechanical stress are then applied to the memory array or to individual storage cells within the memory array. The over-stress condition(s) act upon one or more state-determining elements of the storage cells to imprint the RO data. The over-stress condition permanently alters a value of a state-determining property of the state-determining element without incapacitating normal operation of the storage cell. The altered value of the state-determining property biases the cell according to the state of the RO data bit. The bias is detectable in the cell read-out signal. A pre-written ferroelectric random-access memory (“FRAM”) array is baked. Baking traps electric dipoles oriented in a direction corresponding to a state of the pre-written data and forms am RO data imprint.

Abstract: A system for error correction code (ECC) management of write-once memory (WOM) codes includes, for example, a controller for selecting between one of a WOM (Write-Only Memory) mode and an ECC (error correction code) mode. A codec is arranged to operate in the selected mode. The codec while operating in the ECC mode is arranged to identify a bit position of at least one bit error in response to ECC parity bits of a first received data word. The codec while operating in the WOM mode is arranged to receive a WOM-encoded word from an addressed location in a WOM device, to receive a second received data word to be encoded and written to the addressed location, and to generate WOM-encoded word for writing to the addressed location in the WOM device. The WOM-encoded word for writing to the addressed location is optionally ECC encoded.

Abstract: A system for error correction code (ECC) management of write-once memory (WOM) codes includes, for example, a host processor is arranged to send a data word that is to be stored in a WOM (Write-Only Memory) device. A host interface is arranged to receive the first data word for processing by a WOM controller and an ECC controller. The WOM controller is for generating a first WOM-encoded word in response to an original symbol of the first data word, while the ECC controller is for generating a first set of ECC bits in response to the original symbol of the first data word. A memory device interface is for writing the first WOM-encoded word and the first set of ECC bits to the WOM device in accordance with the memory address associated with the first data word.

Abstract: A transceiver device combination includes a first ultrasound transducer and a processor chip including a central processing unit (CPU). A memory is coupled to the CPU including stored ultrasound communications software for rendering the processor chip a target device for an ultrasound probe driven via a host computing device having a second ultrasound transducer for together performing ultrasonic debugging of the processor chip. The transceiver device combination includes (i) a transmit path including an ultrasound driver having an input driven by an output of the CPU, where an output of the ultrasound driver is coupled to drive an input of the first ultrasound transducer to transmit ultrasound signals and (ii) a receive path including analog signal processing circuitry that couples an output of the first ultrasound transducer responsive to received ultrasound signals from the ultrasound probe to an input of the CPU.

Abstract: Read-only (“RO”) data to be permanently imprinted in storage cells of a memory array are written to the memory array. One or more over-stress conditions such as heat, over-voltage, over-current and/or mechanical stress are then applied to the memory array or to individual storage cells within the memory array. The over-stress condition(s) act upon one or more state-determining elements of the storage cells to imprint the RO data. The over-stress condition permanently alters a value of a state-determining property of the state-determining element without incapacitating normal operation of the storage cell. The altered value of the state-determining property biases the cell according to the state of the RO data bit. The bias is detectable in the cell read-out signal. A pre-written ferroelectric random-access memory (“FRAM”) array is baked. Baking traps electric dipoles oriented in a direction corresponding to a state of the pre-written data and forms am RO data imprint.

Abstract: A transceiver device combination includes a first ultrasound transducer and a processor chip including a central processing unit (CPU). A memory is coupled to the CPU including stored ultrasound communications software for rendering the processor chip a target device for an ultrasound probe driven via a host computing device having a second ultrasound transducer for together performing ultrasonic debugging of the processor chip. The transceiver device combination includes (i) a transmit path including an ultrasound driver having an input driven by an output of the CPU, where an output of the ultrasound driver is coupled to drive an input of the first ultrasound transducer to transmit ultrasound signals and (ii) a receive path including analog signal processing circuitry that couples an output of the first ultrasound transducer responsive to received ultrasound signals from the ultrasound probe to an input of the CPU.

Abstract: A flow meter ultrasonically measures fluid velocity in a pipe and ultrasonically transmits fluid flow data along the pipe. An ultrasonic transducer used for fluid velocity measurement may optionally also be used for communication of flow data, and optionally, the ultrasonic frequency for fluid velocity measurement may be the same as the ultrasonic frequency for communication of flow data.

Abstract: An integrated circuit. The integrated circuit comprises an area having a layout aligned in rows. Each row is definable by a pair of row boundaries. The integrated circuit also comprises a plurality of cells, comprising a first set of cells. Each cell in the first set of cells spans at least two rows and comprises a PMOS transistor having a source/drain region that spans across one of the row boundaries and an NMOS transistor having a source/drain region that spans across one of the row boundaries.

Abstract: An integrated circuit. The integrated circuit comprises an area having a layout aligned in rows. Each row is definable by a pair of row boundaries. The integrated circuit also comprises a plurality of cells, comprising a first set of cells. Each cell in the first set of cells spans at least two rows and comprises a PMOS transistor having a source/drain region that spans across one of the row boundaries and an NMOS transistor having a source/drain region that spans across one of the row boundaries.

Abstract: An embodiment of the invention is a method for measuring access time where the frequency of a ring oscillator is measured with and without a device under test 1 in the ring. Those two frequencies are compared to calculate the access time of the device under test 1. Another embodiment of the invention is circuitry 25 that measures the frequency of a ring oscillator with and without a device under test 1. Again the two frequencies are compared to calculate the access time of the device under test 1.

Abstract: An embodiment of the invention is a method for measuring access time where the frequency of a ring oscillator is measured with and without a device under test 1 in the ring. Those two frequencies are compared to calculate the access time of the device under test 1. Another embodiment of the invention is circuitry 25 that measures the frequency of a ring oscillator with and without a device under test 1. Again the two frequencies are compared to calculate the access time of the device under test 1.

Abstract: A flip flop (30) comprising a master stage (34) comprising a first plurality of transistors (54, 56), wherein each of the first plurality of transistors comprises a selective conductive path between a source and drain. The flip flop also comprises a slave stage (42) comprising a second plurality of transistors (60, 62, 64, 66), wherein each of the second plurality of transistors comprises a selective conductive path between a source and drain. For the flip flop, in a low power mode the flip flop is operable to receive a first voltage (VDD) coupled to the selective conductive path for each of the first plurality of transistors. Also in the low power mode, the flip flop is operable to receive a second voltage (VDDL) coupled to the selective conductive path for each of the second plurality of transistors. Lastly, the second voltage is greater than the first voltage in the low power mode.

Abstract: An embodiment of the invention is circuitry 25 that contains a programmable delay 8 and a pulse generator 16 that send clock signals of a certain frequency to a device under test 1. The programmable delay 8 increases the frequency of the clock signal to the device under test 1 until the device under test fails. The cycle time measurement of the device under test 1 is the period of maximum frequency at which the device under test 1 operates properly.

Abstract: An embodiment of the invention is circuitry 25 that contains a programmable delay 8 and a pulse generator 16 that send clock signals of a certain frequency to a device under test 1. The programmable delay 8 increases the frequency of the clock signal to the device under test 1 until the device under test fails. The cycle time measurement of the device under test 1 is the period of maximum frequency at which the device under test 1 operates properly.

Abstract: An embodiment of the invention is a method for measuring access time where the frequency of a ring oscillator is measured with and without a device under test 1 in the ring. Those two frequencies are compared to calculate the access time of the device under test 1. Another embodiment of the invention is circuitry 25 that measures the frequency of a ring oscillator with and without a device under test 1. Again the two frequencies are compared to calculate the access time of the device under test 1.