Abstract: Solid-state lighting devices, and more particularly, a multiple-layered cover structure for beamshaping for light-emitting devices such as light-emitting diodes (LEDs) are disclosed. LED devices may include the cover structures that have more than one layer, each with different index of refractions and/or shapes in order to provide more finely tuned beamshaping than would be possible with a cover structure formed from a single layer of silicone. The cover structure can cover a side and a top of an LED chip and include an inner layer with a first refractive index that covers at least a top of the LED chip, and an outer layer with second refractive index. The cover structure also includes lumiphoric material, either in one of the inner or outer layer, or in a separate layer. The inner and outer layers can be of different shapes to result in an emission with desired characteristics.

Abstract: Solid-state lighting devices, and more particularly to a three-dimensional (3D) light-emitting diode (LED) device and a method of manufacture are disclosed. A submount of the LED can have several submount portions that are angled with respect to each other, and LED chips can be mounted on each submount portion, such that the LED chips of the device are angled at different angles with respect to each other. In an embodiment, the LED device can include a heatsink that is in contact with each of the submount portions to channel heat away from the LED chips. The LED chips can be mounted on the submount portions when all submount portions are laying flat, and then the submount portions can be pushed or punched into their respective angles.

Abstract: A LED chip has integrated capacitor and inductor structures, wherein a capacitor structure is coupled to an active LED structure of the LED chip, the inductor structure is coupled to the capacitor structure, and the inductor structure is configured to harvest power from an externally supplied radio frequency (RF) signal. At least portions of the inductor and capacitor are arranged in or on ceramic passivation material. A LED chip may have a footprint of no greater than 2.5 mm×2.5 mm, and/or a top area of no greater than 6.25 mm2. A resistor element or memristor element may be coupled between the capacitor structure and the active region. Methods of fabricating such LED chips are also provided.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly material arrangements in cover structures for LEDs that tailor light emissions are disclosed. Material arrangements include light-filtering particles or ionic species that are integrated within materials of covers structures that cover LED chips within LED packages. Light-filtering materials may be configured to selectively filter one or more portions of light provided by LED chips and/or lumiphoric materials within LED packages. Dispersing light-filtering materials within covers structures provides protection and mechanical support for the light-filtering materials. Additionally, arrangements and concentrations of light-filtering materials within cover structures may be varied horizontally and/or vertically to tailor emission patterns of corresponding LED packages. Material arrangements include light-filtering species incorporated at an atomic level within cover structures.

Abstract: Lighting-emitting devices and more particularly light-emitting diode (LED) chips with multiple wavelength emissions and related methods are disclosed. LED chips include separately formed active LED structures that are bonded together to form a single LED chip capable of emitting multiple wavelengths. Each active LED structure may be separately patterned into a number of individual light-emitting junctions such that after bonding, a single LED chip includes multiple light-emitting junctions from multiple active LED structures. Patterns of individual light-emitting junctions may be selected so that when bonded together, emissions from different active LED structures may pass through LED chips with reduced interactions with one another. Certain aspects include vertical and horizontal offset positions for light-emitting junctions formed from different active LED structures.

Abstract: Solid-state lighting devices, and more particularly to laser etching light-emitting diode (LED) devices and related methods are disclosed. LED devices that use sapphire substrates are difficult to etch using conventional techniques, but laser etching and ablation of sapphire substrates overcomes these challenges. Laser etching a surface of the sapphire substrate can form light-extraction features that include structures formed in or on light-emitting surfaces of substrates. Light-extraction features may include repeating patterns of features with dimensions that, along with reduced substrate thicknesses, provide targeted emission profiles for flip-chip structures, such as Lambertian emission profiles. In some embodiments, laser ablation of the sapphire substrate can also be used to form trenches between active layer portions of an LED matrix to form pixels that reduce interference between the active layer portions.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly lumiphoric particle structures in wavelength conversion elements for LEDs and related methods are disclosed. Lumiphoric particle structures include coatings that provide improved optical, mechanical, and/or thermal characteristics when distributed within host materials of wavelength conversion elements. Coatings are pre-formed on lumiphoric particles before the lumiphoric particles are integrated with wavelength conversion elements. Heat treatments associated with firing wavelength conversion elements may diffuse coating materials within wavelength conversion elements to form graded material structures for further improvements to optical, mechanical, and/or thermal characteristics.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs), and more particularly integrated warning structures for ultraviolet LED packages are disclosed. Integrated warning structures may include passive structures, such as lumiphoric material regions, that are arranged within LED packages to receive a portion of ultraviolet light from an LED chip within the LED package and provide a small amount of wavelength-converted light. Such wavelength-converted light may serve as indication that ultraviolet light is being emitted. Exemplary lumiphoric material regions may form one or more discrete regions within LED packages and may provide such wavelength-converted light without substantial impact on color purity of the LED packages. Accordingly, LED packages may provide integrated warning emissions that may serve to indicate the presence of ultraviolet emissions and/or reduce human exposure to such ultraviolet emissions.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs), and more particularly integrated secondary optics into LED chip cover structures for improved optical emission of high intensity LEDs is disclosed. Optical elements are integrated as a secondary optic onto one or both surfaces of a chip cover structure, where the chip cover structure may be referred to as a primary optic. The integrated secondary optic may be formed directly on one or both surfaces of the chip cover structure. The integrated secondary optic is purposely built to be coupled with the light emission of the LED to emit a desired emission profile. In this regard, a final luminaire may be provided with increased efficiency either by improving the coupling of the LED into a conventional secondary optic or in some cases by removing the need for a conventional secondary optic all together.

Abstract: Solid-state lighting devices, and more particularly sidewall arrangements for light-emitting devices such as light-emitting diodes (LEDs) are disclosed. LED devices may include light-altering materials that are provided around peripheral sidewalls of LED chips without the need for a supporting submount or lead frame. The side layer around the peripheral sidewall of the LED chip can include an inner layer and an outer layer, each with different light altering properties. For example, the inner layer can be reflective so as to improve the light output and/or efficiency of the LED chip, while the outer layer can be absorptive so as to avoid interaction and/or crosstalk with neighboring LED chips. By having a reflective inner layer, and an absorptive outer layer, light output, sharpness, and contrast can be improved.

Abstract: The present disclosure relates to solid-state lighting devices including light-emitting diodes (LEDs) and more particularly to light-extraction features for LED chips and packages and methods of forming the light-extraction features on a cover structure over the LED chip to improve light extraction from the LED chip. A number of sublayers that are embedded with lumiphoric materials can be pressed in a mold that includes texturing that imprints the light-extraction features in the sublayers. The sublayers can then be baked to form a cover structure that can be placed over the LED chip. In other embodiments, the sublayers can be baked to form the cover structure, which can then be heated to above a transition temperature of the cover structure, then pressed in a textured mold to form the light-extraction features, and then placed over the LED chip.

Abstract: The present disclosure relates to techniques for providing and fabricating a 3D shaped cover structure for a light emitting diode (LED) package that has improved light emission efficiencies and color over angle emissions over flat cover structures. The cover structure can form a hemispherical dome over an LED chip, so that light incident on the inside surface of the dome will be at a more acute angle which can reduce the internal reflection of light emitted by the LED chip. The cover structure can also serve as a remote phosphor lumiphore, thereby improving color over angle emission and reduce the need for an additional adhesion interface on the LED. The cover structure can be shaped during a green sheet lamination and sintering process to create the 3D shape. In other embodiments, a structure can be machined into a desired shape.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and, more particularly, lumiphoric material arrangements for cover structures of packaged LED devices are disclosed. Lumiphoric material arrangements include discrete regions of lumiphoric materials that are provided over portions of underlying LED chips. The discrete regions of lumiphoric materials may be patterned on portions of cover structures that are then attached to underlying LED chips. By having discrete regions of lumiphoric materials over portions of LED chips, certain emissions from the LED chips may pass through the lumiphoric materials while other emissions from the LED chips may be emitted without passing through the lumiphoric materials. In this manner, contributions of the lumiphoric materials to aggregate emissions of LED packages may provide increased spectral bandwidth.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly lumiphoric material structures for LED packages and related methods are disclosed. Cover structures with predefined color points for LED packages may include multiple lumiphoric material structures that are bonded together and arranged within LED packages. Lumiphoric material structures may include preformed and hardened structures, such as phosphor-in-glass or phosphor-in-ceramic, that are bonded together to form cover structures. Certain lumiphoric material structures include multiple sublayers of varying quantities and/or compositions of lumiphoric materials. Lumiphoric material structures with targeted color points may also be reduced to powder form and mixed within a binder for application in LED packages.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and, more particularly, reflectors for support structures in LED packages are disclosed. Support structures include arrangements of dielectric reflectors relative to LED chips and electrically conductive traces that are patterned on a submount. Dielectric reflectors include multiple dielectric layer structures that form a distributed Bragg reflector or, in some instances, an aperiodic Bragg reflector. Such dielectric reflectors may be arranged one or more of the electrically conductive traces and on portions of the submount uncovered by the electrically conducive traces to provide increased reflectivity across a variety of wavelengths provided by LED chips, including wavelengths in the ultraviolet spectrum.

Abstract: The present disclosure relates to techniques for providing a liquid metal alloy in a light-emitting diode device that can both heal cracks formed in solder joints on the light-emitting diode (LED) device as well as improve thermal energy dissipation from the LED chips to improve the performance, reduce wear, and prolong the life of the LED chips. In an embodiment, a light-emitting diode device can include a liquid metal alloy containing gallium next to a solder joint, and when one or more cracks form, the liquid metal alloy can enter the cracks and solidify, healing the cracks. The liquid metal alloy can also be placed adjacent to, and in contact with the LED chip to transfer energy away from the LED chips.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly sealing structures for LED packages are disclosed. Sealing structures include multiple seals within an LED package that provide a multiple barrier structure for enhanced protection from elemental ingress from a surrounding environment. Certain seals may be provided as bonding materials between cover structures and submounts of LED packages, thereby enclosing LED chips. Additional seals may be provided as coatings on surfaces of LED chips and/or submounts that are between cover structures and LED chips. Sealing structures may include multiple levels of hermetic seals with LED packages.

Abstract: Light-emitting devices and more particularly wafer level fabrication for multiple chip light-emitting devices is disclosed. Light-emitting devices include certain LED package structures, such as LED chips, submounts, and electrical connections that are formed by wafer level fabrication before individual light-emitting devices are separated. Methods include joining LED wafers with multiple LED chips formed thereon to submount wafers that include corresponding metallization patterns, followed by separating individual light-emitting devices. Each light-emitting device includes arrays of LED chips that are already bonded to a submount with electrical connections. The arrays of LED chips may be electrically coupled in a variety of electrical configurations based on arrangements of the metallization patterns.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and lens arrangements for packaged LED devices are disclosed. An LED package may include one or more LED chips on a submount with a lens positioned on the submount to form a cavity. The one or more LED chips may reside in the cavity without direct encapsulation materials that would otherwise contact the one or more LED chips and any corresponding wirebonds. In this manner, the one or more LED chips may be driven with higher drive currents while reducing degradation and mechanical strain effects related to differences in coefficients of thermal expansion with typical encapsulant materials. LED packages may also be configured with one or more apertures that allow air flow between an interior volume of a cavity and an ambient environment outside the LED package to promote heat dissipation at higher drive currents.