Abstract: A light emitting device includes a LED having a light emitting first surface and a light emitting second surface that define a corner. A support layer is disposed to receive light emitted by the light emitting second surface and is disposed adjacent the corner. A luminophoric medium layer at least partially covers the light emitting first surface and the light emitting second surface where the luminophoric medium layer is at least partially supported by the support layer to prevent a narrowing of the luminophoric medium layer.

Abstract: Light-emitting diode (LED) packages, and more particularly broad electromagnetic spectrum LED packages are disclosed. Individual LED packages are disclosed that are capable of emitting various combinations of peak wavelengths across a broad electromagnetic spectrum, including one or more combinations of ultraviolet, visible, and infrared peak wavelengths. Such LED packages may also be broadly tunable across portions of the electromagnetic spectrum ranging from ultraviolet to infrared wavelengths. By providing such capabilities within a single light source provided by a single LED package, larger and more complex systems for broadband emissions that include multiple light sources, complex optical systems, mirrors, filters, and additional components may be avoided. LED chip arrangements, control schemes, and encapsulant arrangements are also disclosed for such broad electromagnetic spectrum LED packages.

Abstract: Light-emitting diode (LED) packages and more particularly thermal pad structures for LED packages with reduced sizes are disclosed. LED packages include an LED chip on a submount with an anode mounting pad, a cathode mounting pad, and a thermal pad on an opposite side of the submount to the LED chip. Structures of thermal pads and corresponding anode and cathode mounting pads include arrangements that provide shortest distances values between the thermal pads and the anode and cathode mounting pads that provide increased surface area for heat dissipation while also reducing electrical shorting, particularly for submounts with compact sizes.

Abstract: Methods and related systems for transfer of semiconductor die and more particularly for mass transfer of semiconductor die, such as light-emitting diodes, using transfer elements are disclosed. Certain aspects relate to methods of continuous mass transfer using roller feed loops. Two carrier bars move in opposite directions, one with die and one with a substrate. The die stick to a roller and transfer from a die carrier to the substrate on a substrate carrier. In certain aspects, transfer elements may include rollers, flexible rollers, or expandable rollers. Transfer elements may further include alignment features, such as alignment pockets, that provide enhanced die alignment. In certain aspects, transfer elements may include one or more planar surfaces that rotate positions relative to the die carrier and the substrate carrier.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly contact structures in LED chips for reducing voiding of bonding metals are disclosed. LED chips include active LED structures on carrier submounts and contact structures arranged to receive external electrical connections adjacent the active LED structures. Exemplary contact structures include contacts electrically coupled to active LED structures and dielectric structures beneath the contacts. Dielectric structures are arranged beneath portions of the contacts while still allowing electrical connections therethrough. Such dielectric structures may be provided as regions of dielectric material with spacings that control topography of underlying bonding metals to reduce voiding.

Abstract: Solid-state lighting devices including light-emitting diode (LED) chips and more particularly interconnect structures for improved LED chip performance are disclosed. Interconnect structures are disclosed within LED chips that are structured to increase perimeter contact areas within localized LED chip areas without substantial increases to overall areas occupied by the interconnect structures. By increasing contact perimeters of interconnects within a certain area, increased current injection efficiency may be provided. Interconnect structures for increased current injection are disclosed for both n-type layers and p-type layers. Interconnect structures may include patterned dielectric materials within interconnect openings and corresponding interconnects that are formed around the patterned dielectric materials. Additional interconnect structures include nested patterns and extensions that provide enhanced adhesion along LED chip perimeters.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly passivation structures for LED chips are disclosed. LED chips include active LED structures, typically formed of epitaxial semiconductor layers, that include mesas with mesa sidewalls. Passivation structures include a passivation layer that bounds the mesa sidewalls. The passivation layer includes a material that is robust to etchants of active LED structures when forming the mesas to reduce damage in underlying portions of the LED chip. The passivation layer effectively forms a seal along the mesa sidewalls that reduces unwanted undercutting or erosion during etching, thereby providing improved reliability, reduced moisture ingress, and the flexibility to enable additional chip structures, such as light extraction features.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly current spreading layer structures for LED chips are disclosed. LED chips include active LED structures with current spreading layer arrangements relative to reflective structures that provide efficient current injection into the active LED structures while also providing improved light extraction. Current spreading layers include openings that allow portions of dielectric reflector layers to form interfaces with active LED structures adjacent the current spreading layers. Metal reflector layers are provided on the dielectric reflector layers, and reflective layer interconnects are formed through the dielectric reflector layers to contact portions of the current spreading layer.

Abstract: Light-emitting diode (LED) packages and more particularly LED packages with lead frame structures for flip-chip mounting of LED chips are disclosed. Lead frame structures include multiple leads with arrangements for LED chips to be flip-chip mounted across neighboring pairs of leads. Arrangements of stress relief features and anchoring features relative to mounting locations are provided in lead frame structures to enhance mechanical integrity of flip-chip bonds during thermal cycling. LED packages may further include housings that are formed about the lead frame structures. Housings may include a recess with recess floor arrangements for positioning of LED chips.

Abstract: Light-emitting diode (LED) packages and more particularly emission height arrangements in LED packages and related devices and methods are disclosed. LED packages, LED chips, and related device arrangements are disclosed that include various combinations of LED chip types, lumiphoric materials, and/or cover structures that are arranged together while also providing a substantially uniform emission height for corresponding light-emitting surfaces. LED chips may be configured with different heights or thicknesses that compensate for variations in lumiphoric materials and/or cover structures utilized to provide different emission colors. Corresponding LED packages and/or LED chips with different emission colors may be assembled near one another with improved emission height uniformity.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs), and more particularly support structures for LED packages are disclosed. Support structure arrangements are provided for LED packages with increased reflectivity. Support structures may include patterned electrically conductive materials that provide electrical connections and bonding surfaces for LED chips within the package, and bonding surfaces for cover structures in certain arrangements. Depending on the wavelengths of light emitted by the LED package, light reflectivity tradeoffs can exist for conductive materials that provide suitable electrical connections and bonding surfaces. Additional patterned layers with increased reflectivity may be provided on underlying patterned electrically conductive materials.

Abstract: Light-emitting diode (LED) packages and more particularly LED packages with selectively placed light-altering materials and related methods are disclosed. Selectively placed light-altering materials are provided that are arranged along peripheral edges of LED chips and along portions of underlying submounts. By covering peripheral edges of LED chips without covering entire submount surfaces, light-altering materials may be provided in reduced amounts while still redirecting laterally propagating light from the LED chips. Methods of selectively placing light-altering materials include selectively dispensing one or more droplets on submount portions that are proximate LED chip edges and allowing the one or more droplets to wick about the LED chip edges and portions of the submount before curing in place.

Abstract: Light-emitting diode (LED) packages, and more particularly arrangements of multiple LED chips in LED packages are disclosed. Arrangements include different types, different dimensions, and/or different orientations of LED chips within LED packages and corresponding electrical connections. Further arrangements include individual cover structures having different dimensions for various LED chips to accommodate thickness variations of LED chips and/or thickness variations attributed to different elements of individual cover structures. Different cover structure elements may include lumiphoric materials, antireflective layers, filter layers, and polarization layers. By accounting for dimensional variations between LED chips and/or between cover structures within multiple-chip LED packages, aggregate light-emitting surfaces may be provided with improved emission uniformity.

Abstract: Active control of light emitting diodes (LEDs) and LED packages within LED displays is disclosed. LED packages are disclosed that include a plurality of LED chips that form at least one LED pixel for an LED display. Each LED package may include an active electrical element that is configured to receive a control signal and actively maintain an operating state, such as brightness or grey level while other LED packages are being addressed. Active electrical elements may include active circuitry that includes one or more of a driver device, a signal conditioning or transformation device, a memory device, a decoder device, an electrostatic discharge (ESD) protection device, a thermal management device, and a detection device, among others. In this regard, each LED pixel of an LED display may be configured for operation with active matrix addressing.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs), and more particularly binder materials for light-emitting devices are disclosed. A lumiphoric material for a light-emitting device may include lumiphoric particles embedded within a binder material. The lumiphoric material may be formed according to sol-gel chemistry techniques where a solution of binder precursors and lumiphoric particles is applied to a surface, dried to reduce liquid phase, and fired to form a hardened and dense lumiphoric material. The binder precursors may include metal oxide precursors that result in a metal oxide binder. In this manner, the lumiphoric material may have high thermal conductivity while also being adaptable for liquid-phase processing. In further embodiments, binder materials with or without lumiphoric particles may be utilized in place of conventional encapsulation materials for light-emitting devices.

Abstract: Solid-state lighting devices and more particularly light-emitting devices including light-emitting diodes (LEDs) with light-altering material arrangements are disclosed. LED devices may include light-altering materials that are provided around peripheral sidewalls of LED chips without the need for a supporting submount or lead frame. The light-altering materials may be provided with reduced thicknesses along peripheral sidewalls of LED chips. An exemplary LED device as disclosed herein may be configured with a footprint that is close to a footprint of the LED chip within the LED device while also providing an amount of light-altering material around peripheral edges of the LED chip to reduce cross-talk. Accordingly, such LED devices may be well suited for use in applications where LED devices form closely-spaced LED arrays. Fabrication techniques are disclosed that include laminating a preformed sheet of light-altering material on one or more surfaces of the LED chip.

Abstract: Aspects disclosed herein relate to light-emitting diode (LED) chips and manufacturing processes thereof. In certain aspects, an LED chip includes an epitaxial layer with a first side and a second side, a first type contact proximate a second side of the epitaxial layer, and a wavelength conversion element including at least one lumiphore. In certain embodiments, in a flip-chip construction, a distance between the at least one lumiphore and the epitaxial layer is less than 5 microns and/or the first side of the epitaxial layer includes texturing. In certain embodiments, in a vertical stack construction, a transparent bonding layer between the epitaxial layer and the wavelength conversion element includes inorganic material. In certain embodiments, a ceramic layer is bonded to the second side of the epitaxial layer and positioned horizontally adjacent to the first type contact. Such configurations facilitate construction, decrease size, and/or increase performance of the LED chips.