Abstract: Apparatus for controlling ink in a continuous ink jet printer includes an ink delivery channel; a source of pressurized ink communicating with the ink delivery channel; a nozzle bore which opens into the ink delivery channel to establish a continuous flow of ink in a stream, the nozzle bore defining a nozzle bore perimeter; and a heater which causes the stream to break up into a plurality of droplets at a position spaced from the nozzle bore. The heater having a selectively-actuated section associated with only a portion of the nozzle bore perimeter, whereby actuation of the heater section produces an asymmetric application of heat to the stream to control the direction of the stream between a print direction and a non-print direction.

Abstract: A printer having mechanically-assisted ink droplet separation and method of using same, for separating an ink meniscus from an ink nozzle orifice while clearing-away particulate matter from about the orifice. In a preferred embodiment of the invention, a heater surrounds an orifice formed by the nozzle, the orifice having an ink meniscus residing therein. As the heater heats the ink meniscus, surface tension of the ink meniscus decreases, thereby causing the ink meniscus to extend outwardly from the orifice to define an extended ink meniscus. A cutter, which is disposed near the orifice, includes a plate member disposed opposite an outside surface of the nozzle so as to define a passage between the outside surface and the plate member. The plate member has an opening aligned with the orifice and in communication with the passage. A gas pressure regulator in communication with the passage supplies pressurized gas into the passage, which gas flows along the passage an through the opening.

Abstract: Apparatus is disclosed for controlling ink in a continuous ink jet printer in which a continuous stream of ink is emitted from a nozzle, wherein an ink stream generator establishes a continuous flow of ink in a stream such that the stream breaks up into a plurality of droplets at a position spaced from the ink stream generator. A stream deflector includes a body having a surface positioned adjacent to the stream between the ink stream generator and the position whereat the stream breaks up into droplets such that the stream contacts the surface and is deflected at least in part due to a tendency of liquid to contact a surface in proportion to liquid-solid free energy.

Abstract: Image source, for converting image data in the form of serial charges into a high-resolution imagewise light pattern, combines semiconductor charge-coupled devices for receiving the charges, associated small-scale field emission arrays for converting the charges to imagewise pattern of electron emissions, an electron multiplier for intensifying the electron emissions, and a luminescent phosphor layer susceptible to light output according to the impact of the intensified electron emission. The light output may be directed onto a photosensitive image recording medium to provide for image recording. Second and third embodiments of the contemplated image source provide light output that forms an image to be viewed directly.

Abstract: By incorporating an ITO electrode which is more transparent than polysilicon, and designing the pixel such that it has asymmetric gates with as much as possible of its light sensitive region covered by an ITO electrode, light sensitivity is increased. To solve the problem of impurity diffusion from the ITO electrode into the silicon below, the conventional Silicon Dioxide gate dielectric was replaced with an Oxide/Nitride/Oxide stack. Employing at least some polysilicon electrodes with ITO electrodes is desirable to allow entrance passages through which hydrogen passivation can be accomplished. The pixel architecture can be designed to increase sensitivity further by other design choices. The first of these choices is to incorporate a lenslet on each pixel such that as much as possible of the light falling on the pixel is made to pass through the portion of the pixel covered with ITO.

Abstract: A continuous ink jet printer emits a continuous stream of ink from an ink stream generator. The stream breaks up into a plurality of droplets at a position spaced from the ink stream generator. A stream deflector includs a control surface positioned adjacent to the stream between the ink stream generator and the position whereat the stream breaks up into droplets such that the stream contacts the control surface and is thereby deflected due to a gain in free energy caused by physical contact between the ink in the stream and the control surface. Apparatus may be provided to modulate the position of the control surface to change the direction of the stream between a print direction and a non-print direction.

Abstract: An interline sensor is constructed using photocapacitors. The vertical shift register of the interline sensor is operated in a uniphase mode, i.e., holding one of the two phase (.O slashed.2) at a D.C. potential while fluctuating the other phase (.O slashed.1) between a voltage that is sufficiently above and below that D.C. potential to facilitate transfer of charge from one phase to the next. The uniphase mode is facilitated by a single electrode that covers both the phase that is held at a constant D.C. potential and the photodetector having photocapacitor charges. The single electrode in the preferred embodiment is an indium tin oxide electrode. The charges are transferred from the photocapacitors to the vertical shift register by a third level clock into .O slashed.1 adjacent the photodetectors.It is also proposed that the same ITO electrode be utilized to for phase 2 of both the vertical and horizontal CCD shift registers.

Abstract: Image source, for converting image data in the form of serial charges into a high-resolution imagewise light pattern, combines semiconductor charge-coupled devices for receiving the charges, associated small-scale field emission arrays for converting the charges to imagewise pattern of electron emissions, an electron multiplier for intensifying the electron emissions, and a luminescent phosphor layer susceptible to light output according to the impact of the intensified electron emission. The light output may be directed onto a photosensitive image recording medium to provide means for image recording. Second and third embodiments of the contemplated image source provide light output that forms an image to be viewed directly.

Abstract: An interline sensor is constructed using photocapacitors. The vertical shift register of the interline sensor is operated in a uniphase mode, i.e., holding one of the two phase (.phi.2) at a D.C. potential while fluctuating the other phase (.phi.1) between a voltage that is sufficiently above and below that D.C. potential to facilitate transfer of charge from one phase to the next. The uniphase mode is facilitated by a single electrode, an indium tin oxide electrode, that covers both the phase that is held at a constant D.C. potential and the photodetector having photocapacitor charges. The charges are transferred from the photocapacitors to the vertical shift register by a third level clock into (.phi.1) adjacent the photodetectors utilizing the same ITO electrode for phase 2 of both the vertical and horizontal CCD shift registers is also proposed.

Abstract: By introducing an n-type drain implant substantially below the surface of the p-type substrate of a full frame image sensor, then enclosing the drain on the bottom and the sides with a deep p-type implant, and accumulating the surface with a shallow p-type implant, with all implantations performed through the same mask aperture, the blooming control, channel stop, and dark current suppression features of the imager are compressed, increasing the fill factor, facilitating pixel miniaturization, and therefore enabling high resolution imaging applications.

Abstract: By incorporating an ITO electrode which is more transparent than polysilicon, and designing the pixel such that it has asymmetric gates with as much as possible of its light sensitive region covered by an ITO electrode, light sensitivity is increased. To solve the problem of impurity diffusion from the ITO electrode into the silicon below, the conventional Silicon Dioxide gate dielectric was replaced with an Oxide/Nitride/Oxide stack. Employing at least some polysilicon electrodes with ITO electrodes is desirable to allow entrance passages through which hydrogen passivation can be accomplished. The pixel architecture can be designed to increase sensitivity further by other design choices. The first of these choices is to incorporate a lenslet on each pixel such that as much as possible of the light falling on the pixel is made to pass through the portion of the pixel covered with ITO.

Abstract: By designing pixels with highly transparent ITO electrodes and asymmetric gates such that as much light as possible falls upon a region covered by an ITO electrode, light sensitivity is increased. Impurity diffusion from the ITO electrode into the silicon below is prevented by employing an Oxide/Nitride/Oxide stack as a dielectric. Employing at least some polysilicon electrodes with ITO electrodes is desirable to allow entrance passages through which hydrogen passivation can be accomplished. The pixel architecture can be designed to increase sensitivity further by other design choices. The first of these choices is to incorporate a lenslet on each pixel such that as much as possible of the light falling on the pixel is made to pass through the portion of the pixel covered with ITO.

Abstract: By introducing an n-type drain implant substantially below the surface of the p-type substrate of a full frame image sensor, then enclosing the drain on the bottom and the sides with a deep p-type implant, and accumulating the surface with a shallow p-type implant, with all implantations performed through the same mask aperture, the blooming control, channel stop, and dark current suppression features of the imager are compressed, increasing the fill factor, facilitating pixel miniaturization, and therefore enabling high resolution imaging applications.

Abstract: A method and system for light beam communication between a camera and a computer is provided by adapting an existing light beam auto-focus system of a conventional automated camera, such as a conventional automated film-based camera or a conventional automated electronic camera, and by adapting a conventional computer to provide a light beam communication linkage with the adapted camera. The light beam auto-focus system of such automated cameras is modified to include a mode selector providing a selection of the conventional light beam auto-focus mode and alternatively for selection of a light beam communication mode. The camera has a microprocessor and an erasable electrically programmable read-only memory (EEPROM). In the light beam communication mode, a light beam emitter driver circuit and a light beam sensor timing circuit and signal processor are provided.

Abstract: In accordance with the invention, a full frame solid-state image sensor of altered accumulation potential comprises a substrate that includes a semiconductor of one conductivity type and has a surface at which is situated a photodetector that comprises a first storage area and a second storage area. The first and second storage areas each comprise a CCD channel of conductivity type opposite to the conductivity type of the semiconductor. A first barrier region separates the first storage area from the second storage area, and a second barrier region separates the second storage area from an adjacent photodetector; the second barrier region is shallower than the first barrier region. Adjacent to one side of the photodetector is a channel stop of the same conductivity type as the semiconductor.

Abstract: In accordance with the invention, a full frame solid-state image sensor with altered accumulation potential comprises a substrate that includes a semiconductor of one conductivity type and has a surface at which is situated a photodetector that comprises a first storage area and a second storage area. The first and second storage areas each comprise a CCD channel of conductivity type opposite to the conductivity type of the semiconductor, and the channel comprises an uppermost region of opposite conductivity type to the remainder of the CCD channel. A first barrier region separates the first storage area from the second storage area, and a second barrier region separates the second storage area from an adjacent photodetector; the second barrier region is shallower than the first barrier region. Adjacent to one side of the photodetector is a channel stop of the same conductivity type as the semiconductor.

Abstract: Image source, for converting image data in the form of serial charges into a high-resolution imagewise light pattern, includes a CCD emitter having a semiconductor charge-coupled device (CCD) structure for receiving and transferring the charges, a charge amplification means including a charge-modulated control field effect transistor structure (C-FET), and plural small-scale field emission cells (FEC). The CCD emitter is operable to convert the charges to an imagewise pattern of electron emissions that are directed to a luminescent phosphor layer susceptible to light output according to the impact of the incident electrons. The light output may be directed onto a photosensitive image recording medium to provide means for image recording, or in alternative embodiments, the light output may be viewed directly.

Abstract: Solid-state image sensors, in general, comprise a photodetector for detecting radiation from the image and converting the radiation to charge carriers, and transfer means for carrying the charge carriers to an output circuit. One type of solid-state image sensor uses a CCD as both the photodetector and the transfer means. The solid-state image sensor generally includes a plurality of the CCD's arranged in spaced parallel relation to form an array. The image sensor of this disclosure utilizes only one antiblooming lateral overflow barrier. The excess signal charge of phase 1 flows into the preceding phase 2 and is saved. This eliminates the overflow barrier of phase 1 so that blooming protection is via the overflow barrier of the preceding phase 2. This results in an image sensor with blooming protection and increased charge capacity.

Abstract: A memory device is provided that includes a plurality of floating gate memory cells arranged in an array, where each memory cell includes a control gate, a drain and a source. A decoder is provided that applies a first erase voltage to the control gates of selected floating gate memory cells of the array to prevent erasure of the selected floating gate memory cells and a second erase voltage to the control gates of the remaining floating gate memory cells of the array to permit erasure of the remaining floating gate memory cells in a sector erase mode of operation. The decoder is also preferably capable of supplying the second erase voltage to the control gates of each of the floating gate memory cells in a bulk erase mode of operation.

Abstract: Image source, for converting image data in the form of serial charges into a high-resolution imagewise light pattern, includes a CCD emitter having a semiconductor charge-coupled device (CCD) structure for receiving and transferring the charges, a charge amplification means including a charge-modulated control field effect transistor structure (C-FET), and plural small-scale field emission cells (FEC). The CCD emitter is operable to convert the charges to an imagewise pattern of electron emissions that are directed to a luminescent phosphor layer susceptible to light output according to the impact of the incident electrons. The light output may be directed onto a photosensitive image recording medium to provide means for image recording, or in alternative embodiments, the light output may be viewed directly.