Abstract: The present invention is directed to an image sensor which comprises a body of a semiconductor material having therein a plurality of photodetectors arranged in a line and a CCD shift register extending along the line of photodetectors adjacent to but spaced from an edge of the photodetectors. The CCD shift register includes a channel region and a plurality of first and second gate electrodes extending over and insulated from the channel region. One of each of the first and second gate electrodes extends across a portion of the edge of each photodetector. Each of the first electrodes has an arm extending along the entire edge of its respective photodetector between the photodetector and the second gate electrode. A separate transfer region is in the body between the edge of each photodetector and its respective first electrode and extends along the entire edge of the photodetector. A transfer gate is over and insulated from the transfer regions.

Abstract: A teachable camera 8 which includes an alterable template matching neural network 40 positioned between a microprocessor 10 that performs camera picture taking algorithms and the units 24-32 such as the shutter which control the characteristics of the picture. The network 40 alters the output of the algorithms to match the picture characteristics desired by the photographer. The network 40 is altered by a rule based expert system executing in a personal computer 70 which determines how to alter the matching template of the network 40.

Abstract: The present invention is directed to a method of making an image sensor having a CCD shift register and at least one photocapacitor wherein features of the shift register and photocapacitor are commonly made and the photocapacitor has a thin plate of conductive polycrystalline silicon. The method includes the steps of embedding into a body of a semiconductor material of one conductivity type dopants of the opposite conductivity type to simultaneously form a channel region of the shift register and a channel region of a photocapacitor. A layer of a dielectric material is formed on the body and over the channel regions. A layer of conductive polycrystalline silicon is formed on the dielectric layer and is defined to form a top plate of the photocapacitor over the photocapacitor channel region and at least some gate electrodes of the shift register over the shift register channel region.

Abstract: In the present invention there is provided a plurality of photosensitive elements arranged in a symmetrical pattern around a central circular area. The area surrounding the central area is formed of a square area having the circular area at its center with the square area divided into four equal quadrants. The next area is rectangular in shape and surrounds the second area. The rectangular area is formed in four equal sections with each of the corners of the square area lying along two adjacent edges of the rectangular areas. A selection means is provided for selecting the output signal from any one the photodiodes or for selecting the output signals from any combination of two or more of the photodiodes so as to accentuate the responsiveness of the light meter to a selected area or feature of the image to be photographed.

Abstract: The present invention is an autofocus chip which produces reference levels or voltages from CCD charge sources rather from voltage sources chip. The CCD sensor of the chip has normal photodiodes and bright diodes. A high voltage reference is produced from the maximum charge or full well level of one of the bright diodes of the sensor, stored and used as the high reference of an A/D converter in the chip. The reference traverses the same path as the image values produced by the photodiodes. A low voltage reference for the A/D converter is produced by storing the reset level voltage of the bright diode or of each pixel. Correlated double sampling for each pixel is accomplished when the low reference level in the A/D converter is updated with the reset value of each pixel. The reset level also traverses the same path as the image signals.

Abstract: A rangefinder device includes means for projecting a beam of light to illuminate a small area on an object in a scene, an array of photosensors for sensing an image of the scene, and signal processing means responsive to the photosignals from the photosensors for determining the relative location of the illuminated small area in the image of the scene. The rangefinder device includes an image sensor having means for removing the contribution due to ambient scene illumination from the photosignals. The image sensor includes a plurality of photosensitive elements, comprising a photosensor, a charge storage element and a bridge network of switches arranged for selectively connecting the photosensor to the charge storage element in such a manner as to selectively add photocurrent to the storage element or to remove photocurrent from the storage element. The rangefinder device is first operated with the light beam on and the bridge networks connected to add photocurrent to the storage elements.

Abstract: A rangefinder device includes means for projecting a beam of light to illuminate a spot on an object in a scene, an image sensor for sensing an image of the scene, and signal processing means responsive to signals produced by the image sensor for determining the relative location of the illuminated spot in the image of the scene to determine the distance to the object. The rangefinder device features means for removing the contribution due to ambient scene illumination from the photosignals, including an improved image sensor having an array of photosensors and a pair of analog shift registers for receiving the photosignals from the array of photosensors. One of the analog shift registers receives photosignals from the photosensor array when the beam is turned off, and the other analog shift register receives photosignals from the array when the beam is turned on.

Abstract: A charge coupled device (CCD) image sensor comprises a semiconductor substrate having a transparent insulating layer formed on a light receiving surface thereof, a first set of transfer electrodes disposed in groups of one or more electrodes, said groups being disposed in spaced-apart relation on the insulating layer, and a second set of transfer electrodes disposed on the insulating layer, the electrodes of the second set being disposed in the spaces between the groups of electrodes of the first set and being substantially wider and more uniformly transparent in the visible region of the spectrum than the electrodes of the first set. In the preferred embodiment of the invention, the CCD is a three-phase, three-level device, comprising two levels of slightly overlapping polysilicon electrodes which constitute the first set of transfer electrodes and a third level of substantially unpatterned conductive transparent metal oxide which constitutes the second set of transfer electrodes.

Abstract: A technique for fabricating an oxidized polysilicon electrode structure is disclosed that results in a gently tapered profile at electrode step regions, thereby facilitating the formation of an overlying electrode structure free from physical defects.

Abstract: In accordance with the present invention, a conventional area image sensor of the interline transfer type is so configured as to be readable in blocks of adjacent photosite rows, thereby enabling the modified sensor to be read out at fast frame rates. The resulting sensor, although designed for block readout, can be produced using conventional manufacturing processes.