Abstract: A data storage system includes a memory circuit comprising memory cells and a control circuit. The control circuit generates a first set of redundant bits indicating bit positions of the memory cells having stuck-at faults in response to a first write operation if a first rate of the stuck-at faults in the memory cells is greater than a first threshold. The control circuit is operable to encode data bits to generate encoded data bits and a second set of redundant bits that indicate a transformation performed on the data bits to generate the encoded data bits in response to a second write operation if a second rate of stuck-at faults in the memory cells is greater than a second threshold. The encoded data bits stored in the memory cells having the stuck-at faults match digital values of corresponding ones of the stuck-at faults.

Abstract: A shingled magnetic recording hard disk drive that uses writeable cache tracks in the inter-band gaps between the annular data bands minimizes the effect of far track erasure (FTE) in the boundary regions of annular data bands caused by writing to the cache tracks. Based on the relative FTE effect for all the tracks in a range of tracks of the cache track being written, a count increment (CI) table or a cumulative count increment (CCI) table is maintained. For every writing to a cache track, a count for each track in an adjacent boundary region, or a cumulative count for each adjacent boundary region, is increased. When the count value for a track, or the cumulative count for a boundary region, reaches a predetermined threshold the data is read from that band and rewritten to the same band.

Abstract: A method and apparatus are provided for implementing enhanced data partial erase for multi-level cell (MLC) memory using threshold-voltage-drift or resistance-drift tolerant moving baseline memory data encoding. A data partial erase for data written to the MLC memory using threshold-voltage-drift or resistance-drift tolerant moving baseline memory data encoding is performed, and a data re-write after the partial erase to the MLC memory is performed using threshold-voltage-drift or resistance-drift tolerant moving baseline memory data encoding. A data partial erase cycle includes a duration and voltage level based upon a degradation of the MLC memory cells.

Abstract: A data storage system includes a memory circuit comprising memory cells and a control circuit. The control circuit generates a first set of redundant bits indicating bit positions of the memory cells having stuck-at faults in response to a first write operation if a first rate of the stuck-at faults in the memory cells is greater than a first threshold. The control circuit is operable to encode data bits to generate encoded data bits and a second set of redundant bits that indicate a transformation performed on the data bits to generate the encoded data bits in response to a second write operation if a second rate of stuck-at faults in the memory cells is greater than a second threshold. The encoded data bits stored in the memory cells having the stuck-at faults match digital values of corresponding ones of the stuck-at faults.

Abstract: A data storage system includes a memory circuit having memory cells and a control circuit. The control circuit is operable to receive data bits provided for storage in the memory cells. A subset of the memory cells have predetermined stuck-at faults. The control circuit is operable to compute a binomial coefficient for each of the predetermined stuck-at faults based on a bit position of a corresponding one of the predetermined stuck-at faults within the memory cells. The control circuit is operable to add together the binomial coefficients to generate an encoded number using a combinatorial number system. The control circuit is operable to generate a first set of redundant bits that indicate the encoded number. The first set of redundant bits are used to decode bits read from the memory cells to regenerate the data bits.

Abstract: Approaches for retrieving files from a replicated file system. A component receives, from a requestor, a request for a copy of a data unit. The component identifies a plurality of storage nodes that each stores a complete copy of the data unit. The component sends, to the plurality of storage nodes, an instruction to retrieve a copy of the data unit within a specified period of time. At each storage node receiving an instruction, a determination of whether the copy of the data unit may be retrieved within the specified period of time is made, and if so, the copy of the data unit is provided to the component only if the copy of the data unit was actually retrieved within the specified period. The component provides the first copy of the data unit it receives to the requestor and discards any subsequently received copies of the data unit.

Abstract: Approaches are provided for a hard-disk drive (HDD) and techniques for using multiple LUNs per HDD where each LUN is mapped to a head/disk interface. In one example, a HDD generates multiple LUNs and assigns each to a single head, such that data written by a first head is only associated to a first LUN, and so forth.

Abstract: A method and apparatus are provided for implementing enhanced performance for multi-level cell (MLC) memory using threshold-voltage-drift or resistance-drift tolerant moving baseline memory data encoding. A voltage baseline of a prior write is identified, and a data write uses the threshold-voltage-drift or resistance-drift tolerant moving baseline memory data encoding for data being written to the MLC memory responsive to the identified voltage baseline.

Abstract: A data storage system has a memory circuit that comprises memory cells and a control circuit that receives data bits provided for storage in the memory cells. The control circuit encodes the data bits to generate a first set of redundant bits and encoded data bits, such that the encoded data bits selected for storage in a first subset of the memory cells with first stuck-at faults have digital values of corresponding ones of the first stuck-at faults. The control circuit encodes the first set of redundant bits to generate a second set of redundant bits. The control circuit performs logic functions on the second set of redundant bits and the encoded data bits to generate a third set of redundant bits, such that redundant bits in the third set of redundant bits selected for storage in a second subset of the memory cells with second stuck-at faults have digital values of corresponding ones of the second stuck-at faults.

Abstract: A data storage system includes a memory circuit that has memory cells and a control circuit that is operable to receive data bits provided for storage in the memory cells. The control circuit is operable to receive a first matrix. Each row of the first matrix corresponds to a unique one of the data bits. The control circuit is operable to generate a second matrix having only the rows of the first matrix that correspond to the data bits provided for storage in a subset of the memory cells having stuck-at faults. The control circuit is operable to generate a third matrix having linearly independent columns of the second matrix. The control circuit is operable to encode the data bits to generate encoded data bits and redundant bits using the third matrix.

Abstract: A data storage device accepts read and write commands with absolute command completion times based on queue-depth-of-one (qd=1) execution and stores them in an unsequenced commands memory. These commands are requests to access the data storage device and contain both locations on the storage medium where the data is located and whether the requested operation is read or write. For each pair of first and second commands in the memory, the time between execution of the first command and the second command is calculated and stored. A command selector then reads data from the memory based on a resequencing NCQ algorithm which inserts one or more commands from the command memory into the original qd=1 sequence whenever this insertion will not affect the execution time of commands in the original qd=1 sequence. The resequencing algorithm of the present invention increases IOPS and reduced read head actuator travel and wear.

Abstract: ICC-NCQ priority and deadline information in conjunction with an estimation of command access time that is specific to SMR drives are used improve command queue optimization. Estimated completion times are determined based on the internal subcommands that the drive has to execute to complete the host read or write command taking into account whether all or part of the data will be or already is stored in write-twice cache, E-region and/or I-region. The command processor selects the next command for execution based on calculated access times with adjusted priority based on the specified deadline for the command. As the deadline approaches, the priority of the command increases. For high priority data writes as specified by a host, an optimized storage plan is selected as appropriate using the “write-twice cache” (WTC) region, E-region or I-region.

Abstract: Approaches are provided for a hard-disk drive (HDD) and techniques for using multiple LUNs per HDD where each LUN is mapped to a head/disk interface. In one example, a HDD generates multiple LUNs and assigns each to a single head, such that data written by a first head is only associated to a first LUN, and so forth.

Abstract: A method is described for allowing disk drives, such as shingle-written magnetic recording (SMR) drives, to be shipped for customer use with portions of the magnetic media being left untested. The testing is then completed by the drive self-testing in the field. The drive is made functional at the factory by fully testing at least one operational set of regions including an I-region, an E-region and a write cache region. The operational set of regions works as a separate self-contained virtual disk drive and can be used immediately. The remaining untested areas on the media can be tested in the field by a background task and/or when the first write command is received that requires a new track or operational set of regions (on-the fly testing).

Abstract: A shingled magnetic recording (SMR) hard disk drive (HDD) essentially eliminates the effect of far track erasure (FTE) in the boundary regions of annular data bands caused by writing in the boundary regions of adjacent annular data bands. The extent of the FTE effect is determined for each track within a range of tracks of the track being written. Based on the relative FTE effect for all the tracks in the range, a count increment (CI) table or a cumulative count increment (CCI) table is maintained for all the tracks in the range. For every writing to a track in a boundary region, a count for each track in an adjacent boundary region, or a cumulative count for the adjacent boundary region, is increased. When the count reaches a predetermined threshold the data is read from that band and rewritten to the same band.

Abstract: A shingled magnetic recording hard disk drive that uses writeable cache tracks in the inter-band gaps between the annular data bands minimizes the effect of far track erasure (FTE) in the boundary regions of annular data bands caused by writing to the cache tracks. Based on the relative FTE effect for all the tracks in a range of tracks of the cache track being written, a count increment (CI) table or a cumulative count increment (CCI) table is maintained. For every writing to a cache track, a count for each track in an adjacent boundary region, or a cumulative count for each adjacent boundary region, is increased. When the count value for a track, or the cumulative count for a boundary region, reaches a predetermined threshold the data is read from that band and rewritten to the same band.

Abstract: A shingled magnetic recording (SMR) hard disk drive (HDD) essentially eliminates the effect of far track erasure (FTE) in the boundary regions of annular data bands caused by writing in the boundary regions of adjacent annular data bands. The extent of the FTE effect is determined for each track within a range of tracks of the track being written. Based on the relative FTE effect for all the tracks in the range, a count increment (CI) table or a cumulative count increment (CCI) table is maintained for all the tracks in the range. For every writing to a track in a boundary region, a count for each track in an adjacent boundary region, or a cumulative count for the adjacent boundary region, is increased. When the count reaches a predetermined threshold the data is read from that band and rewritten to the same band.

Abstract: A method and a storage system are provided for implementing a sustained large block random write performance mechanism for shingled magnetic recording (SMR) drives in a redundant array of inexpensive disks (RAID). A Solid State Drive (SSD) is provided with the SMR drives in the RAID. The SSD is used in a hot spare mode, which is activated when a large block random-write event is identified for a SMR drive in the RAID. In the hot spare mode, the SSD temporarily receives new incoming writes for the identified SMR drive. Then the identified SMR drive is updated from the SSD to restore the state of the identified SMR drive, and operations continue with normal writing only using the SMR drives in the RAID.

Abstract: A method and apparatus are provided for implementing enhanced data partial erase for multi-level cell (MLC) memory using threshold-voltage-drift or resistance-drift tolerant moving baseline memory data encoding. A data partial erase for data written to the MLC memory using threshold-voltage-drift or resistance-drift tolerant moving baseline memory data encoding is performed, and a data re-write after the partial erase to the MLC memory is performed using threshold-voltage-drift or resistance-drift tolerant moving baseline memory data encoding. A data partial erase cycle includes a duration and voltage level based upon a degradation of the MLC memory cells.

Abstract: A method and apparatus are provided for implementing enhanced data read for multi-level cell (MLC) memory using threshold-voltage-drift or resistance-drift tolerant moving baseline memory data encoding. A data read back for data written to the MLC memory using threshold-voltage-drift or resistance-drift tolerant moving baseline memory data encoding is performed, higher voltage and lower voltage levels are compared, and respective data values are identified responsive to the compared higher voltage and lower voltage levels.