Abstract: The present disclosure relates to a partial discharge monitoring system and a partial discharge monitoring method that are capable of monitoring and determining a defect generated in a high-voltage power device in real time by classifying signals generated from the high-voltage power device with a machine learning algorithm being applied, and capable of easily forming feature dot data clusters in both a high-density area and a low-density area of two-dimensional feature dot data by performing a process of clustering feature dot points generated from the signals of the power device on the basis of density and distance in parallel, respectively, thereby generating PRPD data for each cluster without missing a signal to improve partial discharge determination accuracy.

Abstract: A method for registering a wireless device by a terminal in a wireless communication system is provided. The method includes obtaining connection information for the wireless device by scanning a recognition code of the wireless device in a first mode, transitioning to a second mode based on the connection information and receiving a connection request from the wireless device, performing a connection operation to the wireless device to transmit network access information to the wireless device, and transitioning to the first mode, and registering the wireless device upon detecting connection of the wireless device to a network in the first mode.

Abstract: The present disclosure relates to a partial discharge monitoring system and a partial discharge monitoring method that are capable of monitoring and determining a defect generated in a high-voltage power device in real time by pattern recognizing signals generated from the high-voltage power device with a machine learning algorithm being applied.

Abstract: A display device may include a sensor layer, a substrate, a pixel layer, and a black matrix. The sensor layer may include photo sensors. The substrate may be positioned on the sensor layer. The pixel layer may be positioned on the substrate and may include pixels. The substrate may be positioned between the sensor layer and the pixel layer. The pixels may include pixel electrodes. The black matrix may be positioned on the pixel layer, may include first-set openings respectively overlapping with the pixel electrodes, and may include second-set openings not overlapping with any pixel electrodes of the display device in a direction perpendicular to the substrate. The pixel layer may be positioned between the substrate and the black matrix.

Abstract: A display device includes a fingerprint sensor layer that receives light reflected by an external object; a substrate disposed on the fingerprint sensor layer; an optical pattern layer disposed on the substrate and that includes a light blocking portion and a light transmitting portion that passes through the light blocking portion in one direction; a first light transmitting layer with a first refractive index and that is disposed on the light blocking portion; a second light transmitting layer with a second refractive index different from the first refractive index and that is disposed on the first light transmitting layer; and a light emitting element layer disposed on the second light transmitting layer.

Abstract: A apparatus for wireless connection reconfiguration in a wireless communication system and a method thereof are proposed. The disclosed generally relates to the wireless communication system and, more particularly, to the apparatus for the wireless connection reconfiguration in the wireless communication system and the method thereof. The method for a base station (BS) in the wireless communication system includes a process of transmitting a connection reconfiguration request (RRCReconfiguration) message to a user equipment (UE), a process of reconfiguring the UE on the basis of the connection reconfiguration request message, and a process of completing the reconfiguration of the UE on the basis of a connection reconfiguration complete (RRCReconfigurationComplete) message received from the UE.

Abstract: A method for fabricating a semiconductor device includes forming a bit line contact hole in a substrate; forming a first spacer on a sidewall of the bit line contact hole; forming a sacrificial spacer over the first spacer; forming a first conductive material that fills the bit line contact hole over the sacrificial spacer; forming a second conductive material over the first conductive material; forming a bit line by etching the second conductive material; and forming a bit line contact plug and a gap between the bit line contact plug and the first spacer by partially etching the first conductive material and the sacrificial spacer to be aligned with the bit line.

Abstract: A method for fabricating a semiconductor device includes forming a bit line contact hole in a substrate; forming a first spacer on a sidewall of the bit line contact hole; forming a sacrificial spacer over the first spacer; forming a first conductive material that fills the bit line contact hole over the sacrificial spacer; forming a second conductive material over the first conductive material; forming a bit line by etching the second conductive material; and forming a bit line contact plug and a gap between the bit line contact plug and the first spacer by partially etching the first conductive material and the sacrificial spacer to be aligned with the bit line.

Abstract: A method for fabricating a semiconductor device includes forming a bit line contact hole in a substrate; forming a first spacer on a sidewall of the bit line contact hole; forming a sacrificial spacer over the first spacer; forming a first conductive material that fills the bit line contact hole over the sacrificial spacer; forming a second conductive material over the first conductive material; forming a bit line by etching the second conductive material; and forming a bit line contact plug and a gap between the bit line contact plug and the first spacer by partially etching the first conductive material and the sacrificial spacer to be aligned with the bit line.

Abstract: A solid dispersion of dutasteride for improving the solubility or dissolution rate of poorly soluble dutasteride, a method for preparing the solid dispersion, and a pharmaceutical composition including the solid dispersion are provided. The solid dispersion includes: a coprecipitate including dutasteride and a water-soluble polymeric carrier; and an adsorbent. The dutasteride and the water-soluble polymeric carrier are present in a weight ratio of 1:10-100 in the coprecipitate.

Abstract: A method for fabricating a semiconductor device includes forming a bit line contact hole in a substrate; forming a first spacer on a sidewall of the bit line contact hole; forming a sacrificial spacer over the first spacer; forming a first conductive material that fills the bit line contact hole over the sacrificial spacer; forming a second conductive material over the first conductive material; forming a bit line by etching the second conductive material; and forming a bit line contact plug and a gap between the bit line contact plug and the first spacer by partially etching the first conductive material and the sacrificial spacer to be aligned with the bit line.

Abstract: A solid dispersion of dutasteride for improving the solubility or dissolution rate of poorly soluble dutasteride, a method for preparing the solid dispersion, and a pharmaceutical composition including the solid dispersion are provided. The solid dispersion includes: a coprecipitate including dutasteride and a water-soluble polymeric carrier; and an adsorbent. The dutasteride and the water-soluble polymeric carrier are present in a weight ratio of 1:10-100 in the coprecipitate. The solid dispersion exhibits a dissolution rate equal to or higher than AVODART® soft capsules and contains a minimal amount of related substances, achieving good storage stability.

Abstract: A semiconductor device includes a substrate including a cell array region including a cell active region. An insulating pattern is on the substrate. The insulating pattern includes a direct contact hole which exposes the cell active region and extends into the cell active region. A direct contact conductive pattern is in the direct contact hole and is connected to the cell active region. A bit line is on the insulating pattern. The bit line is connected to the direct contact conductive pattern and extends in a direction orthogonal to an upper surface of the insulating pattern. The insulating pattern includes a first insulating pattern including a non-metal-based dielectric material and a second insulating pattern on the first insulating pattern. The second insulating pattern includes a metal-based dielectric material having a higher dielectric constant than a dielectric constant of the first insulating pattern.

Abstract: Disclosed are a method and an apparatus that reflect the quantity of wireless resources allocatable to a user terminal in a scheduling target cell to calculate the quantity of available wireless resources for quality of service (QoS) requirements for each kind of varied traffic of user terminals and a metric having a flexible weight for the QoS requirements and support efficient wireless resource scheduling among the user terminals.

Abstract: A semiconductor device includes a substrate including a cell active region and a peripheral active region, a direct contact arranged on a cell insulating pattern formed on the substrate and connected to the cell active region, a bit line structure including a thin conductive pattern, contacting a top surface of the direct contact and extending in one direction, and a peripheral gate structure in the peripheral active region. The peripheral gate structure include a stacked structure of a peripheral gate insulating pattern and a peripheral gate conductive pattern, the thin conductive pattern includes a first material and the peripheral gate conductive pattern include the first material, and a level of an upper surface of the thin conductive pattern is lower than a level of an upper surface of the peripheral gate conductive pattern.

Abstract: A semiconductor device includes: a first interconnection line and a second interconnection line which extend apart from each other on a first plane at a first level on a substrate; a bypass interconnection line that extends on a second plane at a second level on the substrate; and a plurality of contact plugs for connecting the bypass interconnection line to the first interconnection line and the second interconnection line. A method includes forming a bypass interconnection line spaced apart from a substrate and forming on a same plane a plurality of interconnection lines connected to the bypass interconnection line via a plurality of contact plugs.

Abstract: A method of providing a multicast service is provided by a terminal in a terminal-to-terminal direct communication. The terminal transmits a service start request message requesting a start of a multicast service to a multicast server, and receives a service start response message including a result of permitting a start request from the multicast server. The terminal receives, via a base station, resource information of a resource which a multicast coordinator allocates to the multicast service in accordance with a request of the multicast server, and transmits multicast service data based on the resource information.

Abstract: A method for controlling, by a base station, uplink transmission power of a mobile terminal. The base station receives an available transmission power amount of the mobile terminal from the mobile terminal. The base station determines a target channel quality value corresponding to a current location of the mobile terminal, on the basis of the available transmission power amount. The base station determines a received channel quality value using an uplink data channel received from the mobile terminal. Further, the base station determines a transmit power control (TPC) using a difference between the target channel quality value and the received channel quality value.

Abstract: A semiconductor device includes a substrate including an active region, a plurality of conductive line structures separate from the substrate, a plurality of contact plugs between the plurality of conductive line structures, a plurality of landing pads connected to a corresponding contact plug of the plurality of contact plugs, a landing pad insulation pattern between the plurality of landing pads, and a first insulation spacer between the landing pad insulation pattern and first conductive line structures from among the plurality of conductive line structures.

Abstract: A semiconductor device includes a substrate including a cell active region and a peripheral active region, a direct contact arranged on a cell insulating pattern formed on the substrate and connected to the cell active region, a bit line structure including a thin conductive pattern, contacting a top surface of the direct contact and extending in one direction, and a peripheral gate structure in the peripheral active region. The peripheral gate structure include a stacked structure of a peripheral gate insulating pattern and a peripheral gate conductive pattern, the thin conductive pattern includes a first material and the peripheral gate conductive pattern include the first material, and a level of an upper surface of the thin conductive pattern is lower than a level of an upper surface of the peripheral gate conductive pattern.