Patents by Inventor Dae Kwon

Dae Kwon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD OF FABRICATING SEMICONDUCTOR DEVICE
    Publication number: 20140141599
    Abstract: A method of fabricating a semiconductor device includes: forming an epitaxial layer on a semiconductor substrate; forming a capping layer having a first thickness on the epitaxial layer; and oxidizing the capping layer in an oxygen atmosphere to form a first gate dielectric layer having a second thickness.
    Type: Application
    Filed: January 28, 2014
    Publication date: May 22, 2014
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jin-Ho Do, Ha-Jin Lim, Weon-Hong Kim, Hoi-Sung Chung, Moon-Kyun Song, Dae-Kwon Joo
  • SEMICONDUCTOR DEVICES EMPLOYING HIGH-K DIELECTRIC LAYERS AS A GATE INSULATING LAYER
    Publication number: 20140124872
    Abstract: A method of fabricating a semiconductor device includes providing a semiconductor substrate having a first region and a second region, forming a nitrogen-containing lower gate insulating layer on the semiconductor substrate, forming an upper gate insulating layer on the nitrogen containing lower gate insulating layer, forming a lower metal layer on the upper gate insulating layer; and selectively removing the lower metal layer in the first region such that a lower metal layer pattern remains in the second region, wherein the upper gate insulating layer in the first region prevents the lower gate insulating layer in the first region from being etched during removing of the lower metal layer in the first region. A semiconductor device fabricated by the method is also provided.
    Type: Application
    Filed: January 10, 2014
    Publication date: May 8, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: WeonHong KIM, Dae-Kwon JOO
  • Methods for producing low cholesterol animal products using hypocholesterolemic feed supplements and products therefrom
    Patent number: 8715716
    Abstract: This invention provides methods and compositions for producing reduced cholesterol animal foodstuffs and products by feeding livestock and other food-producing animals with feed supplemented with microbial cultures containing hypocholesterolemic compounds produced by microorganisms comprising said microbial cultures. The invention provides low cholesterol poultry, eggs, meat, whole milk, and dairy products.
    Type: Grant
    Filed: May 29, 2002
    Date of Patent: May 6, 2014
    Assignee: Jinis Biopharmaceuticals Co.
    Inventors: Seong-Tshool Hong, Hyeon-Jin Kim, Dae-Kwon Lee, Won-Young Yang
  • APPARATUS FOR MANUFACTURING COMPOUND POWDER, METHOD OF MANUFACTURING IRON-BORON COMPOUND POWDER BY USING THE APPARATUS, BORON ALLOY POWDER MIXTURE, METHOD OF MANUFACTURING THE BORON ALLOY POWDER MIXTURE, COMBINED POWDER STRUCTURE, METHOD OF MANUFACTURING THE COMBINED POWDER STRUCTURE, STEEL PIPE, AND METHOD OF MANUFACTURING THE STEEL PIPE
    Publication number: 20140096858
    Abstract: Provided are an apparatus for manufacturing a compound powder, a method of manufacturing an iron-boron compound powder by using the apparatus, a boron alloy powder mixture, a method of manufacturing the boron alloy powder mixture, a combined powder structure, a method of manufacturing the combined powder structure, a steel pipe, and a method of manufacturing the steel pipe The method of manufacturing the boron alloy powder mixture includes: preparing a mixed powder including a boron iron alloy powder and a target powder; heat-treating the mixed powder to boronize at least a portion of the target powder and de-boronize at least a portion of the boron iron alloy powder, thereby de-boronizing the boron iron alloy powder to reduce the melting point of the boron iron alloy powder.
    Type: Application
    Filed: June 8, 2012
    Publication date: April 10, 2014
    Applicant: KOREA INSTITUTE OF MACHINERY & MATERIALS
    Inventors: Kee-Seok Nam, Jung-Dae Kwon, Jong-Joo Rha, Hee-Chan Ahn, Tae-Su Lim
  • Compression ring for an isolator in a motion transmitting remote control assembly
    Patent number: 8671798
    Abstract: An annular isolator (68, 70) is disposed in an open ended bore (66) of a support body (58) and surrounds an end fitting (26, 28) for attenuating vibrations therebetween. A cap (74) is disposed on the support body (58) to close the open ended bore (66). An inflexible compression ring (76) is sandwiched axially between the isolator (68, 70) and the cap (74) and in abutting engagement with a stop (78) to limit compression of the isolator (68, 70) from the cap (74). The compression ring (76) is inserted into the bore (66) prior to molding the cap (74) to limit compression of the isolator (68, 70) during fabrication.
    Type: Grant
    Filed: June 17, 2009
    Date of Patent: March 18, 2014
    Assignee: Infac Corporation
    Inventor: Young Dae Kwon
  • Methods of fabricating a semiconductor device having a high-K gate dielectric layer and semiconductor devices fabricated thereby
    Patent number: 8673711
    Abstract: A method of fabricating a semiconductor device includes forming a lower interfacial layer on a semiconductor layer, the lower interfacial layer being a nitride layer, forming an intermediate interfacial layer on the lower interfacial layer, the intermediate interfacial layer being an oxide layer, and forming a high-k dielectric layer on the intermediate interfacial layer. The high-k dielectric layer has a dielectric constant that is higher than dielectric constants of the lower interfacial layer and the intermediate interfacial layer.
    Type: Grant
    Filed: September 22, 2011
    Date of Patent: March 18, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: WeonHong Kim, Dae-Kwon Joo, Hajin Lim, Jinho Do, Kyungil Hong, Moonkyun Song
  • Method of fabricating semiconductor device
    Patent number: 8673747
    Abstract: A method of fabricating a semiconductor device includes: forming an epitaxial layer on a semiconductor substrate; forming a capping layer having a first thickness on the epitaxial layer; and oxidizing the capping layer in an oxygen atmosphere to form a first gate dielectric layer having a second thickness.
    Type: Grant
    Filed: April 25, 2011
    Date of Patent: March 18, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jin-Ho Do, Ha-Jin Lim, Weon-Hong Kim, Hoi-Sung Chung, Moon-Kyun Song, Dae-Kwon Joo
  • Method of patterning a semiconductor device with hard mask
    Patent number: 8664111
    Abstract: There is provided a method of manufacturing a semiconductor device. In the method, a gate insulation layer including a high-k dielectric material is formed on a substrate. An etch stop layer is formed on the gate insulation layer. A metal layer is formed on the etch stop layer. A hard mask including amorphous silicon is formed on the metal layer. The metal layer is patterned using the hard mask as an etching mask to form a metal layer pattern.
    Type: Grant
    Filed: September 30, 2011
    Date of Patent: March 4, 2014
    Assignee: Samsung Electronic Co., Ltd.
    Inventors: Ha-Jin Lim, Moon-Han Park, Eun-Gon Kim, Jin-Ho Do, Weon-Hong Kim, Moon-Kyun Song, Dae-Kwon Joo
  • Semiconductor devices employing high-K dielectric layers as a gate insulating layer and methods of fabricating the same
    Patent number: 8652908
    Abstract: A method of fabricating a semiconductor device includes providing a semiconductor substrate having a first region and a second region, forming a nitrogen-containing lower gate insulating layer on the semiconductor substrate, forming an upper gate insulating layer on the nitrogen containing lower gate insulating layer, forming a lower metal layer on the upper gate insulating layer; and selectively removing the lower metal layer in the first region such that a lower metal layer pattern remains in the second region, wherein the upper gate insulating layer in the first region prevents the lower gate insulating layer in the first region from being etched during removing of the lower metal layer in the first region. A semiconductor device fabricated by the method is also provided.
    Type: Grant
    Filed: September 22, 2011
    Date of Patent: February 18, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: WeonHong Kim, Dae-Kwon Joo
  • SEMICONDUCTOR DEVICES HAVING A DIFFUSION BARRIER LAYER AND METHODS OF MANUFACTURING THE SAME
    Publication number: 20140035050
    Abstract: Methods of manufacturing a semiconductor device include forming a gate insulation layer including a high-k dielectric material on a substrate that is divided into a first region and a second region; forming a diffusion barrier layer including a first metal on a second portion of the gate insulation layer in the second region; forming a diffusion layer on the gate insulation layer and the diffusion barrier layer; and diffusing an element of the diffusion layer into a first portion of the gate insulation layer in the first region.
    Type: Application
    Filed: October 9, 2013
    Publication date: February 6, 2014
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Ha-Jin LIM, Jin-Ho Do, Weon-Hong Kim, Moon-Kyun Song, Dae-Kwon Joo
  • THIN FILM SOLAR CELL AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20140007933
    Abstract: Disclosed are a thin film solar cell and a method of manufacturing the thin film solar cell. The thin film solar cell according to an exemplary embodiment of the present invention thin film solar cell includes a substrate: a front electrode layer formed on the substrate; an oxide layer formed on the front electrode layer: a light absorbing layer (intrinsic layer) formed on the oxide layer; and a back electrode layer formed on the light absorbing layer, wherein the oxide layer is formed of a material selected from MoO2, WO2, V2O5, NiO and CrO3.
    Type: Application
    Filed: August 10, 2012
    Publication date: January 9, 2014
    Applicant: KOREA INSTITUTE OF MACHINERY & MATERIALS
    Inventors: Seoung Yoon RYU, Dong Ho KIM, Kee Seok NAM, Yong Soo JEONG, Jung Dae KWON, Sung Hun LEE, Jung Heum YUN, Gun Hwan LEE, Hyung Hwan JUNG, Sung Gyu PARK, Chang Su KIM, Jae Wook KANG, Keong Su LIM, Sang II PARK
  • Thin Film Solar Cell and Method of Manufacturing the Same
    Publication number: 20140011314
    Abstract: Disclosed are a thin film solar cell and a method of manufacturing the thin film solar cell. The thin film solar cell according to an exemplary embodiment of the present invention thin film solar cell includes a substrate: a front electrode layer formed on the substrate; an oxide layer formed on the front electrode layer: a light absorbing layer (intrinsic layer) formed on the oxide layer; and a back electrode layer formed on the light absorbing layer, wherein the oxide layer is formed of a material selected from MoO3, WO3, V2O5, NiO and CrO3.
    Type: Application
    Filed: August 9, 2013
    Publication date: January 9, 2014
    Applicant: Korea Institute of Machinery & Materials
    Inventors: Seoung Yoon Ryu, Dong Ho Kim, Kee Seok Nam, Yong Soo Jeong, Jung Dae Kwon, Sung Hun Lee, Jung Heum Yun, Gun Hwan Lee, Hyung Hwan Jung, Sung Gyu Park, Chang Su Kim, Jae Wook Kang, Koeng Su Lim, Sang Il Park
  • Semiconductor devices including MOS transistors having an optimized channel region and methods of fabricating the same
    Patent number: 8575705
    Abstract: A semiconductor device, including a device isolation layer arranged on a predetermined region of a semiconductor substrate to define an active region, the active region including a central top surface of a (100) crystal plane and an inclined edge surface extending from the central top surface to the device isolation layer, a semiconductor pattern covering the central top surface and the inclined edge surface of the active region, the semiconductor pattern including a flat top surface of a (100) crystal plane that is parallel with the central top surface of the active region and a sidewall that is substantially perpendicular to the flat top surface, and a gate pattern overlapping the semiconductor pattern.
    Type: Grant
    Filed: December 9, 2010
    Date of Patent: November 5, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hajin Lim, Myungsun Kim, Hoi Sung Chung, Jinho Do, Weonhong Kim, Moonkyun Song, Dae-Kwon Joo
  • Semiconductor devices having a diffusion barrier layer and methods of manufacturing the same
    Patent number: 8563411
    Abstract: Methods of manufacturing a semiconductor device include forming a gate insulation layer including a high-k dielectric material on a substrate that is divided into a first region and a second region; forming a diffusion barrier layer including a first metal on a second portion of the gate insulation layer in the second region; forming a diffusion layer on the gate insulation layer and the diffusion barrier layer; and diffusing an element of the diffusion layer into a first portion of the gate insulation layer in the first region.
    Type: Grant
    Filed: July 27, 2011
    Date of Patent: October 22, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ha-Jin Lim, Jin-Ho Do, Weon-Hong Kim, Moon-Kyun Song, Dae-Kwon Joo
  • Photonic quantum ring laser and fabrication method thereof
    Patent number: 8513036
    Abstract: A photonic quantum ring (PQR) laser includes an active layer having a multi-quantum-well (MQW) structure and etched lateral face. The active layer is formed to be sandwiched between p-GaN and n-GaN layers epitaxially grown on a reflector disposed over a support substrate. A coating layer is formed over an outside of the lateral faces of the active layer, and upper electrode is electrically connected to an upper portion of the n-GaN layer, and a distributed Bragg reflector (DBR) is formed over the n-GaN layer and the upper electrode. Accordingly, the PQR laser is capable of oscillating a power-saving vertically dominant 3D multi-mode laser suitable for a low power display device, prevent the light speckle phenomenon, and generate focus-adjusted 3D soft light.
    Type: Grant
    Filed: June 15, 2012
    Date of Patent: August 20, 2013
    Assignee: Postech Academy-Industry Foundation
    Inventors: O Dae Kwon, Mi-Hyang Shin, Seung Eun Lee, Young-Heub Jang, Young Chun Kim, Junho Yoon
  • SYSTEM FOR DYNAMICALLY TRAINING POSTURAL BALANCE
    Publication number: 20130203571
    Abstract: Disclosed is a dynamic postural balance training system. The system includes: a base frame; a support frame which extends upwards from the base frame; a roll motion frame which is coupled to the upper portion of the support frame by a first shaft so as to be rotatable to the left or the right; a pitch motion frame which is coupled to the roll motion frame by a second shaft so as to be rotatable forwards or rearwards; a pelvis fastening unit which is disposed inside the pitch motion frame and which expands to fix the pelvis of the user in place; a connector which extends downwards from the pitch motion frame; and a foot fastening unit which is coupled to the lower end of the connector and expands to fix the feet of the user in place.
    Type: Application
    Filed: June 30, 2011
    Publication date: August 8, 2013
    Applicant: INDUSTRIAL COOPERATION FOUNDATION CHONBUK NATIONAL UNIVERSITY
    Inventors: Dae Kyu Kwon, Jung Pyo Hong, Jong Dae Kwon, Mi Yu, Gu Young Jeong, Kyong Kim
  • Methods of forming gate structure and methods of manufacturing semiconductor device including the same
    Patent number: 8455345
    Abstract: A method of forming agate structure having an improved electric characteristic is disclosed. A gate insulating layer is formed on a substrate and a metal layer is formed on the gate insulating layer. Then, an amorphous silicon layer is formed on the metal layer by a physical vapor deposition (PVD) process. An impurity doped polysilicon layer is formed on the amorphous silicon layer. Formation of an oxide layer at an interface between the amorphous silicon layer and the metal layer may be prevented.
    Type: Grant
    Filed: September 8, 2011
    Date of Patent: June 4, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ha-Jin Lim, Moon-Han Park, Min-Woo Song, Jin-Ho Do, Weon-Hong Kim, Moon-Kyun Song, Dae-Kwon Joo
  • TRANSMITTER FRONT END WITH PROGRAMMABLE NOTCH FILTER AND METHODS FOR USE THEREWITH
    Publication number: 20130109334
    Abstract: A radio transmitter front end for use in a radio frequency (RF) transceiver includes at least one amplifier stage operable to generate a transmit signal in response to an upconverted signal. A feedback generator is operable to generate a transmit feedback signal in response to the transmit signal. A control signal generator is operable to generate at least one filter control signal in response to the transmit feedback signal. A notch filter is operable to filter out of band noise while passing in-band frequencies to the at least one amplifier stage, under control of the at least one filter control signal.
    Type: Application
    Filed: December 18, 2011
    Publication date: May 2, 2013
    Applicant: BROADCOM CORPORATION
    Inventors: Dae Kwon, Ali Afsahi, Arya Reza Behzad
  • Full framed license plate camera with LED white lights
    Patent number: D685307
    Type: Grant
    Filed: October 29, 2012
    Date of Patent: July 2, 2013
    Assignee: Vision Tech America, Inc.
    Inventor: Dae Kwon Chung
  • Slim license plate camera with LED lights
    Patent number: D692815
    Type: Grant
    Filed: March 11, 2013
    Date of Patent: November 5, 2013
    Inventor: Dae Kwon Chung