Abstract: A radio transmitter front end for use in a radio frequency (RF) transceiver includes at least one amplifier stage operable to generate a transmit signal in response to an upconverted signal. A feedback generator is operable to generate a transmit feedback signal in response to the transmit signal. A control signal generator is operable to generate at least one filter control signal in response to the transmit feedback signal. A notch filter is operable to filter out of band noise while passing in-band frequencies to the at least one amplifier stage, under control of the at least one filter control signal.

Abstract: Provided is a method of forming a metal interconnection line on a flexible substrate, wherein the method includes: coating a hard mask layer on at least one surface of the flexible substrate, followed by performing photolithography thereon to form a predetermined hard mask pattern; etching a portion of the flexible substrate by using the hard mask pattern as a mask to form a trench; plasma treating the inside of the trench by using a treatment gas for pre-treating the flexible substrate; coating a seed layer inside the trench; removing the hard mask pattern; and filling the inside of the trench coated with the seed layer with metal. A metal interconnection line formed by using the method may have a strong adhesion force with respect to the flexible substrate.

Abstract: A motion transmitting remote control assembly (20) of the type for transmitting motion in a curved path by a flexible core element (22) in a conduit (24) is secured to a support structure (76) having a U-shaped slot. A support body (66) defines a groove (84) having first and second legs (86, 88) for abutting parallel edges (78) of the U-shaped slot, and a bottom leg (90) connecting the first and second legs (86, 88) for abutting a bottom edge (80). Slider arms (94) movably supported within female guides (92) are urged against snap-in retainers (102) by biasing spring members (104) establishing a locking position. A pair of locking tabs (106) projecting from the slider arms (94) into the groove (84) engage notches (82) in the parallel edges (78). An inclined face (112) is defined along the lower surface (112) of the locking tabs (106) for wedging engagement with the parallel edges (78) of the U-shaped slot to move the slider arms (94) axially to an insertion position.

Abstract: A photonic quantum ring (PQR) laser includes an active layer having a multi-quantum-well (MQW) structure and etched lateral face. The active layer is formed to be sandwiched between p-GaN and n-GaN layers epitaxially grown on a reflector disposed over a support substrate. A coating layer is formed over an outside of the lateral faces of the active alyer, and upper electrode is electrically connected to an upper portion of the n-GaN layer, and a distributed Bragg reflector (DBR) is formed over the n-GaN layer and the upper electrode. Accordingly, the PQR laser is capable of oscillating a power-saving vertically dominant 3D multi-mode laser suitable for a low power display device, prevent the light speckle phenomenon, and generate focus-adjusted 3D soft light.

Abstract: A method of fabricating a semiconductor device includes providing a semiconductor substrate having a first region and a second region, forming a nitrogen-containing lower gate insulating layer on the semiconductor substrate, forming an upper gate insulating layer on the nitrogen containing lower gate insulating layer, forming a lower metal layer on the upper gate insulating layer; and selectively removing the lower metal layer in the first region such that a lower metal layer pattern remains in the second region, wherein the upper gate insulating layer in the first region prevents the lower gate insulating layer in the first region from being etched during removing of the lower metal layer in the first region. A semiconductor device fabricated by the method is also provided.

Abstract: A method of fabricating a semiconductor device includes forming a lower interfacial layer on a semiconductor layer, the lower interfacial layer being a nitride layer, forming an intermediate interfacial layer on the lower interfacial layer, the intermediate interfacial layer being an oxide layer, and forming a high-k dielectric layer on the intermediate interfacial layer. The high-k dielectric layer has a dielectric constant that is higher than dielectric constants of the lower interfacial layer and the intermediate interfacial layer.

Abstract: A scheduling method and apparatus in a wireless communication system. The scheduling method for a node B in a wireless communication system supporting a plurality of carriers includes determining a delay weight for each of a plurality of user equipment (UEs) according to a preset weight application time point. The method also includes determining a scheduling metric value of each UE per carrier using the delay weight, and determining a priority of each UE per carrier using the scheduling metric value.

Abstract: There is provided a method of manufacturing a semiconductor device. In the method, a gate insulation layer including a high-k dielectric material is formed on a substrate. An etch stop layer is formed on the gate insulation layer. A metal layer is formed on the etch stop layer. A hard mask including amorphous silicon is formed on the metal layer. The metal layer is patterned using the hard mask as an etching mask to form a metal layer pattern.

Abstract: A method of forming agate structure having an improved electric characteristic is disclosed. A gate insulating layer is formed on a substrate and a metal layer is formed on the gate insulating layer. Then, an amorphous silicon layer is formed on the metal layer by a physical vapor deposition (PVD) process. An impurity doped polysilicon layer is formed on the amorphous silicon layer. Formation of an oxide layer at an interface between the amorphous silicon layer and the metal layer may be prevented.

Abstract: A scheduling method in a wireless communication system using a dual cell. The method includes determining a scheduling metric value of a user equipment (UE) with respect to each of at least two carriers. The method also includes determining a priority of the UE based on the scheduling metric value, per carrier. The method further includes selecting a UE according to the priority of the UE per carrier. The method also includes determining whether the selected UE has the same priority per carrier, and when the selected UE has the same priority, randomly selecting at least one carrier and allocating a resource to the UE based on the selected carrier.

Abstract: Methods of manufacturing a semiconductor device include forming a gate insulation layer including a high-k dielectric material on a substrate that is divided into a first region and a second region; forming a diffusion barrier layer including a first metal on a second portion of the gate insulation layer in the second region; forming a diffusion layer on the gate insulation layer and the diffusion barrier layer; and diffusing an element of the diffusion layer into a first portion of the gate insulation layer in the first region.

Abstract: A method of fabricating a semiconductor device includes: forming an epitaxial layer on a semiconductor substrate; forming a capping layer having a first thickness on the epitaxial layer; and oxidizing the capping layer in an oxygen atmosphere to form a first gate dielectric layer having a second thickness.

Abstract: An insulation layer is formed on a substrate having an NMOS region and a PMOS region defined therein. A first conductive layer is formed on the insulation layer in the PMOS region, leaving a portion of the insulation layer in the NMOS region exposed. Nitriding is performed to produce a first nitrogen concentration in the insulation layer in the NMOS region and a second nitrogen concentration less than the first nitrogen concentration in the insulation layer in the PMOS region. A second conductive layer is formed on the insulation layer and the first conductive layer and the first and second conductive layers and the insulation layer are patterned to form a first gate structure and a second gate structure in the NMOS region and the PMOS region, respectively.

Abstract: A semiconductor device, including a device isolation layer arranged on a predetermined region of a semiconductor substrate to define an active region, the active region including a central top surface of a (100) crystal plane and an inclined edge surface extending from the central top surface to the device isolation layer, a semiconductor pattern covering the central top surface and the inclined edge surface of the active region, the semiconductor pattern including a flat top surface of a (100) crystal plane that is parallel with the central top surface of the active region and a sidewall that is substantially perpendicular to the flat top surface, and a gate pattern overlapping the semiconductor pattern.

Abstract: Provided are a semiconductor laser diode, and a printhead and an image forming apparatus including the semiconductor laser diode. The semiconductor laser diode includes a concave-convex pattern, and emits light having a Gaussian light intensity distribution. High quality images are provided by applying the semiconductor laser diode to a printhead and an image forming apparatus.

Abstract: A photonic quantum ring (PQR) laser includes an active layer having a multi-quantum-well (MQW) structure and etched lateral face. The active layer is formed to be sandwitched between p-GaN and n-GaN layers epitaxially grown on a reflector disposed over a support substrate. A coating layer is formed over an outside of the lateral faces of the active layer, an upper electrode is electrically connected to an upper portion of the n-GaN layer, and a distributed Bragg reflector (DBR) is formed over the n-GaN layer and the upper electrode. Accordingly, the PQR laser is capable of oscillating a power-saving vertically dominant 3D multi-mode laser suitable for a low power display device, prevent the light speckle phenomenon, and generate focus-adjusted 3D soft light.

Abstract: An annular isolator (68, 70) is disposed in an open ended bore (66) of a support body (58) and surrounds an end fitting (26, 28) for attenuating vibrations therebetween. A cap (74) is disposed on the support body (58) to close the open ended bore (66). An inflexible compression ring (76) is sandwiched axially between the isolator (68, 70) and the cap (74) and in abutting engagement with a stop (78) to limit compression of the isolator (68, 70) from the cap (74). The compression ring (76) is inserted into the bore (66) prior to molding the cap (74) to limit compression of the isolator (68, 70) during fabrication.

Abstract: A motion transmitting remote control assembly (20) of the type for transmitting motion in a curved path by a flexible core element (22) in a conduit (24) is secured to a support structure (76) having a U-shaped slot. A coupling body (36) surrounds the core element (22) and is surrounded by a support body (66) for attachment to the support structure (76). A flange (42) extends radially about the coupling body (36) and is disposed axially between a first and second ends (38, 40) of the coupling body (36). First and second isolators (52, 54) surround the coupling body (36) on opposite sides of the flange (42) and include first and second ribs (63, 64) projecting radially from first and second head portions (61, 62) of the isolators (52, 54). The first and second ribs (63, 64) contact an inner radial surface (122) of the support body (66) thereby spacing the first and second head portions (61, 62) from the support body (66).

Abstract: An optical coupling structure includes a PQR hole emitter having a PQR hole, and an optical fiber whose one side is tapered into the PQR hole. An index-matching solution such as a photo-resist or a photo-resist diluted solution is injected into the PQR hole to adhere the optical fiber and the PQR hole.

Abstract: A motion transmitting remote control assembly (20) of the type for transmitting motion in a curved path by a flexible core element (22) in a conduit (24) is secured to a support structure (76) having a U-shaped slot. A coupling body (36) surrounds the core element (22) and is surrounded by a support body (66) for attachment to the support structure (76). A flange (42) extends radially about the coupling body (36) and is disposed axially between a first and second ends (38, 40) of the coupling body (36). First and second isolators (52, 54) surround the coupling body (36) on opposite sides of the flange (42) and include first and second ribs (63, 64) projecting radially from first and second head portions (61, 62) of the isolators (52, 54). The first and second ribs (63, 64) contact an inner radial surface (122) of the support body (66) thereby spacing the first and second head portions (61, 62) from the support body (66).