Abstract: Disclosed are an LED and an LED module. The LED includes: a first conductivity type semiconductor layer; a mesa disposed over the first conductivity type semiconductor layer and including an active layer and a second conductivity type semiconductor layer; a first ohmic-contact structure in contact with the first conductivity type semiconductor layer; a second ohmic-contact structure in contact with the second conductivity type semiconductor layer; a lower insulating layer at least partially covering the mesa and the first conductivity type semiconductor layer and disposed to form a first opening part at least partially exposing the first ohmic-contact structure and a second opening part at least partially exposing the second ohmic-contact structure; and a current distributing layer connected to the first ohmic-contact structure at least partially exposed by the first opening part and disposed to form a third opening part at least partially exposing the second opening part.

Abstract: A light emitting diode and a method of fabricating the same, the light emitting diode including a substrate, a semiconductor layer formed on one surface of the substrate, and an anti-reflection element formed on the other surface of the substrate and including a nano-pattern. The anti-reflection element is interposed between the substrate and air.

Abstract: Disclosed are a light emitting diode (LED) package and a method of fabricating the same. The LED package includes a first substrate, a semiconductor stack disposed on a front surface of the first substrate, a second substrate including a first lead electrode and a second lead electrode, a plurality of connectors electrically connecting the semiconductor stack to the first and second lead electrodes, and a wavelength converter covering a rear surface of the first substrate. The semiconductor stack includes a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer.

Abstract: Disclosed are a light-emitting device and a manufacturing method thereof. A light-emitting device according to a preferred embodiment of the disclosure comprises: a frame portion having a bottom and a sidewall; a light-emitting portion which is disposed on the frame portion and emits light; and a window portion disposed over the frame portion so as to cover the light-emitting portion.

Abstract: The present invention relates to a light emitting diode and a method of manufacturing same. The light emitting diode includes: a first conductive semiconductor layer; a plurality of mesas that are disposed spaced apart from one another on the first conductive semiconductor layer, each mesa including an active layer and a second conductive semiconductor layer; reflective electrodes that are respectively disposed on the plurality of mesas and come into ohmic contact with the second conductive semiconductor layer; openings that cover the plurality of mesas and the first conductive semiconductor layer, are electrically insulated from the mesas, and expose the reflective electrodes to the upper region of each mesa; and a current spreading layer that comes into ohmic contact with the first conductive semiconductor layer. Thus, a light emitting diode that improves current spreading performance may be provided.

Abstract: A microelectronic package is provided. The microelectronic package includes a substrate having a plurality of solder bumps disposed on a top side of the substrate and a die disposed adjacent to the top side of the substrate. The die includes a plurality of glassy metal bumps disposed on a bottom side of the die wherein the plurality of glassy metal bumps are to melt the plurality of solder bumps to form a liquid solder layer. The liquid solder layer is to attach the die with the substrate.

Abstract: The present invention provides a method for separating an epitaxial layer from a growth substrate, comprising growing an epitaxial layer including a plurality of layers on a growth substrate; etching an edge of at least one layer in the epitaxial layer to form a notch; forming a bonding layer on the epitaxial layer, contacting a bonding substrate onto the bonding layer, and then heating the bonding layer to a bonding temperature for joining the epitaxial layer and the bonding substrate; and cooling the bonding layer after the heating of the boding layer, so that the epitaxial layer and the bonding substrate are joined by the bonding layer, and the epitaxial layer is separated from the growth substrate, wherein the separating the epitaxial layer from the growth substrate starts with separation from the at least one layer where the notch is formed.

Abstract: TA photo detection device, including a substrate, a band-pass filter layer formed over the substrate, a light absorption layer formed over the band-pass filter layer, a Schottky layer formed on a portion of the light absorption layer, a first electrode layer formed on a portion of the Schottky layer, and a second electrode layer formed on the light absorption layer and spaced apart from the Schottky layer.

Abstract: Exemplary embodiments of the present invention relates to a light detection device including a substrate, a non-porous layer disposed on the substrate, a light absorption layer disposed on the non-porous layer, the light absorption layer including pores formed in a surface thereof, a Schottky layer disposed on the surface of the light absorption layer and in the pores, and a first electrode layer disposed on the Schottky layer.

Abstract: A light detection device includes a substrate, a buffer layer disposed on the substrate, a first band gap change layer disposed on a portion of the buffer layer, a light absorption layer disposed on the first band gap change layer, a Schottky layer disposed on a portion of the light absorption layer, and a first electrode layer disposed on a portion of the Schottky layer.

Abstract: Exemplary embodiments of the present invention relate to a photo detection device including a substrate, a first light absorption layer disposed on the substrate, a second light absorption layer disposed in a first region on the first light absorption layer, a third light absorption layer disposed in a second region on the second light absorption layer, and a first electrode layer disposed on each of the first, the second, and the third light absorption layers.

Abstract: A method of fabricating a semiconductor device, the method including: forming a first mask pattern including a masking region and an open region on a substrate; forming a sacrificial layer to cover the substrate and the first mask pattern; patterning the sacrificial layer to form a seed layer and to expose the first mask pattern; forming a second mask pattern on the exposed first mask pattern; forming an epitaxial layer on the seed layer and the second mask pattern, and forming a void between the second mask pattern and the epitaxial layer; and separating the substrate from the epitaxial layer.

Abstract: An epitaxial wafer having a void for separation of a substrate and a semiconductor device fabricated using the same. The epitaxial wafer includes a substrate, a mask pattern disposed on the substrate and comprising a masking region and an opening region, and an epitaxial layer covering the mask pattern. The epitaxial layer includes a void disposed on the masking region. The epitaxial layer can be separated from the growth substrate by applying chemical lift-off or stress lift-off, at the void.

Abstract: Exemplary embodiments of the present invention relate to a single-crystal substrate including a buffer layer including a nitride semiconductor, holes penetrating the buffer layer, and a single-crystal nitride semiconductor disposed on the buffer layer.

Abstract: Disclosed are a light-emitting device and a manufacturing method thereof. A light-emitting device according to an exemplary embodiment of the present invention includes a base, a lighting element disposed on the base, the lighting element including an epitaxial layer and a substrate disposed on the epitaxial layer, a contact member disposed between the lighting element and the base, the contact member electrically connecting the lighting element and the base, and a lens disposed on the substrate.

Abstract: Disclosed are a light emitting diode (LED) package and a method of fabricating the same. The LED package includes a first substrate, a semiconductor stack disposed on a front surface of the first substrate, a second substrate including a first lead electrode and a second lead electrode, a plurality of connectors electrically connecting the semiconductor stack to the first and second lead electrodes, and a wavelength converter covering a rear surface of the first substrate. The semiconductor stack includes a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer.

Abstract: The present invention relates to a light-emitting diode chip. According to the present invention, the light-emitting diode chip comprises: a substrate, the thickness of which is greater than 120 ?m; and a light-emitting diode provided on the surface of the substrate, at one side thereof.

Abstract: Methods and associated structures of forming microelectronic devices are described. Those methods may include method of forming a layered nanotube structure comprising a wetting layer disposed on a nanotube, a Shottky layer disposed on the wetting layer, a barrier layer disposed on the Shottky layer, and a matrix layer disposed on the barrier layer.

Abstract: A microelectronic package is provided. The microelectronic package includes a substrate having a plurality of solder bumps disposed on a top side of the substrate anda die disposed adjacent to the top side of the substrate. The die includes a plurality of glassy metal bumps disposed on a bottom side of the die wherein the plurality of glassy metal bumps are to melt the plurality of solder bumps to form a liquid solder layer. The liquid solder layer is to attach the die with the substrate.

Abstract: A microelectronic assembly and method for fabricating the same are described. In an example, a microelectronic assembly includes a microelectronic device having a surface with one or more areas to receive one or more solder balls, the one or more areas having a surface finish comprising Ni. A solder material comprising Cu, such as flux or paste, is applied to the Ni surface finish and one or more solder balls are coupled to the microelectronic device by a reflow process that forms a solder joint between the one or more solder balls, the solder material comprising Cu, and the one or more areas having a surface finish comprising Ni.