Abstract: A method for forming a high thermal conductivity heat sink to IC package interface is disclosed. The method uses reactive getter materials added to a two phase solder system having a phase change temperature that is about the normal operating temperature range of the IC, to bind absorbed and dissolved oxygen in the two phase solder interface material at or near the air to solder surface. Over time this chemical binding action results in an oxide layer at the air to solder surface that slows the rate of oxygen absorption into the solder interface material, and thus reduces the harmful oxidation of the solder to IC package interface and the solder to heat sink interface.

Abstract: An embodiment of the present invention is an interconnect technique. Carbon nanotubes (CNTs) are prepared. A CNT-solder composite paste is formed containing the CNTs and solder with a pre-defined volume fraction.

Abstract: A carbon nanotube (CNT) array is patterned on a substrate. The substrate can be a microelectronic die, an interposer-type structure for a flip-chip, a mounting substrate, or a board. The CNT array is patterned by using a patterned metallic seed layer on the substrate to form the CNT array by chemical vapor deposition. The patterned CNT array can also be patterned by using a patterned mask on the substrate to form the CNT array by growing. A computing system that uses the CNT array for heat transfer from the die is also used.

Abstract: Devices and methods for their formation, including electronic devices containing capacitors, are described. In one embodiment, a device includes a substrate and a capacitor is formed on the substrate. The capacitor includes first and second electrodes and a capacitor dielectric between the first and second electrodes. At least one of the first and second electrodes includes a metal layer having carbon nanotubes coupled thereto. In one aspect of certain embodiments, the carbon nanotubes are at least partially coated with an electrically conductive material. In another aspect of certain embodiments, the substrate comprises an organic substrate and the capacitor dielectric comprises a polymer material. Other embodiments are described and claimed.

Abstract: A foamed bulk metallic glass electrical connection is formed on a substrate of an integrated circuit package. The foamed bulk metallic glass electrical connection exhibits a low modulus that resists cracking during shock and dynamic loading. The foamed bulk metallic glass electrical connection is used as a solder bump for communication between an integrated circuit device and external structures. A process of forming the foamed bulk metallic glass electrical connection includes mixing bulk metallic glass with a blowing agent.

Abstract: In some example embodiments, a method includes engaging a first contact on a motherboard with a second contact on an electronic package. A portion of one of the first and second contacts is covered with an interlayer that has a lower melting temperature than both of the first and second contacts. The method further includes bonding the first contact to the second contact by melting the interlayer to diffuse the interlayer into the first and second contacts. The bonded first and second contacts have a higher melting temperature than the interlayer before melting. In other example embodiments, an electronic assembly includes a motherboard having a first contact that is bonded to a second contact on an electronic package. An interlayer is diffused within the first and second contacts such that they have a higher melting temperature than the interlayer before the interlayer is diffused into the first and second contacts.

Abstract: A microelectronic assembly and method for fabricating the same are described. In an example, a microelectronic assembly includes a microelectronic device having a surface with one or more areas to receive one or more solder balls, the one or more areas having a surface finish comprising Ni. A solder material comprising Cu, such as flux or paste, is applied to the Ni surface finish and one or more solder balls are coupled to the microelectronic device by a reflow process that forms a solder joint between the one or more solder balls, the solder material comprising Cu, and the one or more areas having a surface finish comprising Ni.

Abstract: Methods and associated structures of forming an indium containing solder material directly on an active region of a copper HIS is enabled. A copper indium containing solder intermetallic is formed on the active region of the IHS. The solder intermetallic improves the solder-TIM integration process for microelectronic packaging applications.

Abstract: A microelectronic assembly and method for fabricating the same are described. In an example, a microelectronic assembly includes a microelectronic device having a surface with one or more areas to receive one or more solder balls, the one or more areas having a surface finish comprising Ni. A solder material comprising Cu, such as flux or paste, is applied to the Ni surface finish and one or more solder balls are coupled to the microelectronic device by a reflow process that forms a solder joint between the one or more solder balls, the solder material comprising Cu, and the one or more areas having a surface finish comprising Ni.

Abstract: A method, apparatus and various material-architectures in an electrically conductive through die via formed of a composite material with a continuous phase of matrix metal and a dispersed phase of graphitic structures of carbon, wherein bulk material properties of the composite material differ from similar bulk material properties of the matrix metal.

Abstract: High strength, reliable bulk metallic glass (BMG) solder materials formed from alloys possessing deep eutectics with asymmetric liquidous slopes. BMG solder materials are stronger and have a higher elastic modulus than, and therefore are less likely than crystalline solder materials to damage fragile low k interlayer dielectric (ILD) materials due to thermal stress in materials with different coefficients of thermal expansion (CTE). BMG solder materials may physically, electrically, or thermally couple a feature to another feature, or any combination thereof. For example, in an embodiment of the invention, a BMG solder material may physically and electrically couple an electronic component to a printed circuit board. In another embodiment of the invention, a BMG solder material may physically and thermally couple an integrated heat sink to a semiconductor device.

Abstract: A microelectronic package is provided. The microelectronic package includes a substrate, a die coupled to a top surface of the substrate and a integrated heat spreader thermally coupled to the die, wherein the integrated heat spreader comprises integrated heat spreader walls. The microelectronic package also includes a thermal interface material disposed between the die and the integrated heat spreader and an underfill material disposed between the integrated heat spreader and the substrate, wherein the underfill material is disposed within gaps between the integrated heat spreader walls, the die and the thermal interface material.

Abstract: A microelectronic package is provided. The microelectronic package includes a substrate having a plurality of solder bumps disposed on a top side of the substrate and a die disposed adjacent to the top side of the substrate. The die includes a plurality of glassy metal bumps disposed on a bottom side of the die wherein the plurality of glassy metal bumps are to melt the plurality of solder bumps to form a liquid solder layer. The liquid solder layer is to attach the die with the substrate.

Abstract: High strength, reliable bulk metallic glass (BMG) solder materials formed from alloys possessing deep eutectics with asymmetric liquidous slopes. BMG solder materials are stronger and have a higher elastic modulus than, and therefore are less likely than crystalline solder materials to damage fragile low k interlayer dielectric (ILD) materials due to thermal stress in materials with different coefficients of thermal expansion (CTE). BMG solder materials may physically, electrically, or thermally couple a feature to another feature, or any combination thereof. For example, in an embodiment of the invention, a BMG solder material may physically and electrically couple an electronic component to a printed circuit board. In another embodiment of the invention, a BMG solder material may physically and thermally couple an integrated heat sink to a semiconductor device.

Abstract: A combined thermal interface material and second layer interconnect reflow material and method are disclosed.

Abstract: A combined thermal interface material and second layer interconnect reflow material and method are disclosed.

Abstract: In some embodiments, a low stress, low-temperature metal-metal composite flip chip interconnect is presented. In this regard, a method is introduced consisting of combining a powder of substantially pure tin with a powder of tin alloy having a lower melting point than pure tin and depositing the combination of metals between an integrated circuit device and a package substrate. Other embodiments are also disclosed and claimed.

Abstract: A solder composition includes a reflow-wetting element that is an intermetallic both pre-reflow and post-reflow. The intermetallic releases the reflow-wetting element upon heating. The solder composition includes the intermetallic first phase in a bulk-solder second phase. A method of assembling a microelectronic package includes the intermetallic in a solder. A computing system also includes the intermetallic first phase in the bulk-solder second phase.

Abstract: Inductors using bulk metallic glass (BMG) material and associated methods are generally described. In one example, an apparatus includes an electrically conductive core material, an electrically insulative material coupled with the electrically conductive core material, and a magnetic bulk metallic glass (BMG) material coupled with the electrically insulative material, wherein the electrically conductive core material, the electrically insulative material, and the magnetic BMG material form an inductor.

Abstract: A microelectronic cooling assembly and method for fabricating the same are described. In one example, a microelectronic cooling assembly includes a microelectronic device, a heat spreader, and a thermal interface material (TIM) that thermally joins the microelectronic device and heat spreader, the TIM comprising a sintered metallic nanopaste.