Patents by Inventor Dai Ishikawa

Dai Ishikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11133181
    Abstract: Methods of forming silicon nitride thin films on a substrate in a reaction space under high pressure are provided. The methods can include a plurality of plasma enhanced atomic layer deposition (PEALD) cycles, where at least one PEALD deposition cycle comprises contacting the substrate with a nitrogen plasma at a process pressure of 20 Torr to 500 Torr within the reaction space. In some embodiments the silicon precursor is a silyly halide, such as H2SiI2. In some embodiments the processes allow for the deposition of silicon nitride films having improved properties on three dimensional structures. For example, such silicon nitride films can have a ratio of wet etch rates on the top surfaces to the sidewall of about 1:1 in dilute HF.
    Type: Grant
    Filed: August 19, 2019
    Date of Patent: September 28, 2021
    Assignee: ASM IP Holding B.V.
    Inventors: Toshiya Suzuki, Viljami J. Pore, Shang Chen, Ryoko Yamada, Dai Ishikawa, Kunitoshi Namba
  • Patent number: 11040416
    Abstract: Provided is copper paste for joining including metal particles, and a dispersion medium. The metal particles include sub-micro copper particles having a volume-average particle size of 0.12 ?m to 0.8 ?m, and flake-shaped micro copper particles having a maximum particle size of 1 ?m to 20 ?m, and an aspect ratio of 4 or greater, and the amount of the micro copper particles contained, which are included in the metal particles and have a maximum particle size of 1 ?m to 20 ?m and an aspect ratio of less than 2, is 50% by mass or less on the basis of a total amount of the flake-shaped micro copper particles.
    Type: Grant
    Filed: September 7, 2016
    Date of Patent: June 22, 2021
    Assignee: Showa Denko Materials Co., Ltd.
    Inventors: Dai Ishikawa, Yuki Kawana, Chie Sugama, Hideo Nakako, Yoshinori Ejiri, Kazuhiko Kurafuchi
  • Publication number: 20210175052
    Abstract: Examples of a substrate processing apparatus include a chamber, a shielding component that is a susceptor or an upper cover provided in the chamber, and a bevel mask that is provided in the chamber and has an inclined surface on which a vertical distance from the shielding component increases toward a center side of the shielding component.
    Type: Application
    Filed: December 1, 2020
    Publication date: June 10, 2021
    Inventors: Yuki Takahashi, Dai Ishikawa
  • Publication number: 20210143121
    Abstract: A copper paste for pressureless bonding is a copper paste for pressureless bonding, containing: metal particles; and a dispersion medium, in which the metal particles include sub-micro copper particles having a volume average particle diameter of greater than or equal to 0.01 ?m and less than or equal to 0.8 ?m, and micro copper particles having a volume average particle diameter of greater than or equal to 2.0 ?m and less than or equal to 50 ?m, and the dispersion medium contains a solvent having a boiling point of higher than or equal to 300° C., and a content of the solvent having a boiling point of higher than or equal to 300° C. is greater than or equal to 2 mass % on the basis of a total mass of the copper paste for pressureless bonding.
    Type: Application
    Filed: January 21, 2021
    Publication date: May 13, 2021
    Inventors: Hideo NAKAKO, Kazuhiko KURAFUCHI, Yoshinori EJIRI, Dai ISHIKAWA, Chie SUGAMA, Yuki KAWANA
  • Patent number: 10930612
    Abstract: A copper paste for pressureless bonding is a copper paste for pressureless bonding, containing: metal particles; and a dispersion medium, in which the metal particles include sub-micro copper particles having a volume average particle diameter of greater than or equal to 0.01 ?m and less than or equal to 0.8 ?m, and micro copper particles having a volume average particle diameter of greater than or equal to 2.0 ?m and less than or equal to 50 ?m, and the dispersion medium contains a solvent having a boiling point of higher than or equal to 300° C., and a content of the solvent having a boiling point of higher than or equal to 300° C. is greater than or equal to 2 mass % on the basis of a total mass of the copper paste for pressureless bonding.
    Type: Grant
    Filed: January 11, 2017
    Date of Patent: February 23, 2021
    Assignee: Showa Denko Materials Co., Ltd.
    Inventors: Hideo Nakako, Kazuhiko Kurafuchi, Yoshinori Ejiri, Dai Ishikawa, Chie Sugama, Yuki Kawana
  • Patent number: 10910262
    Abstract: A method of selectively depositing a capping layer structure on a semiconductor device structure is disclosure. The method may include; providing a partially fabricated semiconductor device structure comprising a surface including a metallic interconnect material, a metallic barrier material, and a dielectric material. The method may also include; selectively depositing a first metallic capping layer over the metallic barrier material and over the metallic interconnect material relative to the dielectric material; and selectively depositing a second metallic capping layer over the first metallic capping layer relative to the dielectric material. Semiconductor device structures including a capping layer structure are also disclosed.
    Type: Grant
    Filed: November 16, 2017
    Date of Patent: February 2, 2021
    Assignee: ASM IP Holding B.V.
    Inventors: Aurélie Kuroda, Akiko Kobayashi, Dai Ishikawa
  • Publication number: 20200344893
    Abstract: Provided is a method for producing a joined body, the method including a first step of preparing a laminated body which includes a first member having a metal pillar provided on a surface thereof, a second member having an electrode pad provided on a surface thereof, and a joining material provided between the metal pillar and the electrode pad and containing metal particles and an organic compound, and a second step of heating the laminated body to sinter the joining material at a predetermined sintering temperature, in which the joining material satisfies the condition of the following Formula (I): (M1?M2)/M1×100?1.0??(I) [in Formula (I), M1 represents a mass of the joining material when a temperature of the joining material reaches the sintering temperature in the second step, and M2 represents a non-volatile content in the joining material.
    Type: Application
    Filed: November 8, 2018
    Publication date: October 29, 2020
    Inventors: Hideo NAKAKO, Yoshinori EJIRI, Dai ISHIKAWA, Chie SUGAMA, Yuki KAWANA, Motohiro NEGISHI, Yuichi YANAKA
  • Patent number: 10811256
    Abstract: Methods for etching a carbon-containing feature are provided. The methods may include: providing a substrate having a carbon-containing feature formed thereon in a reaction space; supplying helium gas and an oxidizing to the reaction space; generating a plasma within the reaction space from a gas mixture comprising helium gas and the oxidizing gas; and anisotropically etching the carbon-containing feature utilizing the plasma to cause lateral etching of the carbon-containing feature.
    Type: Grant
    Filed: October 16, 2018
    Date of Patent: October 20, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: Mitsuya Utsuno, Tomohiro Kubota, Dai Ishikawa
  • Publication number: 20200321209
    Abstract: A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing the sidewall portion of the film by wet etching which removes the sidewall portion of the film more predominantly than the top/bottom portion according to the different chemical resistance properties.
    Type: Application
    Filed: June 17, 2020
    Publication date: October 8, 2020
    Inventors: Dai Ishikawa, Atsuki Fukazawa, Eiichiro Shiba, Shinya Ueda, Taishi Ebisudani, SeungJu Chun, YongMin Yoo, YoonKi Min, SeYong Kim, JongWan Choi
  • Patent number: 10793946
    Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.
    Type: Grant
    Filed: November 6, 2019
    Date of Patent: October 6, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: Delphine Longrie, Antti Juhani Niskanen, Han Wang, Qi Xie, Jan Willem Maes, Shang Chen, Toshiharu Watarai, Takahiro Onuma, Dai Ishikawa, Kunitoshi Namba
  • Publication number: 20200295248
    Abstract: A method for manufacturing a thermoelectric conversion module of the present invention is a method for manufacturing a thermoelectric conversion module including a thermoelectric semiconductor part in which a plurality of p-type semiconductors and a plurality of n-type semiconductors are alternately arranged, and a high temperature side electrode bound to a binding surface of the p-type semiconductor and the n-type semiconductor on a high temperature heat source side and a low temperature side electrode bound to a binding surface of the p-type semiconductor and the n-type semiconductor on a low temperature heat source side, which electrically connect the p-type semiconductor and the n-type semiconductor adjacent to each other in series, and includes a binding step of binding at least one of the high temperature side electrode and the low temperature side electrode, and the p-type semiconductor and the n-type semiconductor together, by sintering a binding layer containing metal particles, which is provided bet
    Type: Application
    Filed: October 24, 2018
    Publication date: September 17, 2020
    Inventors: Motohiro NEGISHI, Yuki KAWANA, Dai ISHIKAWA, Chie SUGAMA, Hideo NAKAKO, Yoshinori EJIRI
  • Publication number: 20200291511
    Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.
    Type: Application
    Filed: November 6, 2019
    Publication date: September 17, 2020
    Inventors: Delphine Longrie, Antti Juhani Niskanen, Han Wang, Qi Xie, Jan Willem Maes, Shang Chen, Toshiharu Watarai, Takahiro Onuma, Dai Ishikawa, Kunitoshi Namba
  • Patent number: 10748865
    Abstract: Provided is a copper paste for joining including copper particles, second particles including a metal element other than copper, and a dispersion medium, in which the copper particles include submicro copper particles having a volume-average particle diameter of 0.12 ?m or more and 0.8 ?m or less and micro copper particles having a volume-average particle diameter of 2 ?m or more and 50 ?m or less, a sum of a content of the submicro copper particles and a content of the micro copper particles is 80% by mass or more of a sum of masses of the copper particles and the second particles, the content of the submicro copper particles is 30% by mass or more and 90% by mass or less of a sum of a mass of the submicro copper particles and a mass of the micro copper particles, and a content of the second particles is 0.01% by mass or more and 10% by mass or less of the sum of the masses of the copper particles and the second particles.
    Type: Grant
    Filed: April 20, 2017
    Date of Patent: August 18, 2020
    Assignee: HITACHI CHEMICAL COMPANY, LTD.
    Inventors: Yuki Kawana, Hideo Nakako, Dai Ishikawa, Chie Sugama, Kazuhiko Kurafuchi, Yoshinori Ejiri
  • Patent number: 10720322
    Abstract: A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing the sidewall portion of the film by wet etching which removes the sidewall portion of the film more predominantly than the top/bottom portion according to the different chemical resistance properties.
    Type: Grant
    Filed: October 22, 2018
    Date of Patent: July 21, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: Dai Ishikawa, Atsuki Fukazawa, Eiichiro Shiba, Shinya Ueda, Taishi Ebisudani, SeungJu Chun, YongMin Yoo, YoonKi Min, SeYong Kim, JongWan Choi
  • Publication number: 20200176411
    Abstract: Provided is a copper paste for joining including copper particles, second particles including a metal element other than copper, and a dispersion medium, in which the copper particles include submicro copper particles having a volume-average particle diameter of 0.12 ?m or more and 0.8 ?m or less and micro copper particles having a volume-average particle diameter of 2 ?m or more and 50 ?m or less, a sum of a content of the submicro copper particles and a content of the micro copper particles is 80% by mass or more of a sum of masses of the copper particles and the second particles, the content of the submicro copper particles is 30% by mass or more and 90% by mass or less of a sum of a mass of the submicro copper particles and a mass of the micro copper particles, and a content of the second particles is 0.01% by mass or more and 10% by mass or less of the sum of the masses of the copper particles and the second particles.
    Type: Application
    Filed: April 20, 2017
    Publication date: June 4, 2020
    Inventors: Yuki KAWANA, Hideo NAKAKO, Dai ISHIKAWA, Chie SUGAMA, Kazuhiko KURAFUCHI, Yoshinori EJIRI
  • Patent number: 10658181
    Abstract: A method of spacer-defined direct patterning in semiconductor fabrication includes: providing a photoresist structure having a target width of lines; trimming the photoresist structures such that a width of each trimmed photoresist structure is smaller than the target width; depositing an oxide film on the template, thereby entirely covering with the oxide film an exposed top surface of the template and the trimmed photoresist structures; etching the oxide film-covered template to remove an unwanted portion of the oxide film without removing the trimmed photoresist structures so as to form vertical spacers isolated from each other, each spacer substantially maintaining the target width and being constituted by the trimmed photoresist structures and a vertical portion of the oxide film covering sidewalls of the trimmed photoresist structures; and etching the spacer-formed template to transfer a pattern constituted by the spacers to the template.
    Type: Grant
    Filed: February 20, 2018
    Date of Patent: May 19, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: Toshihisa Nozawa, Dai Ishikawa, Tomohiro Kubota
  • Publication number: 20200130109
    Abstract: Provided is A metal paste for joints, containing: metal particles; and monovalent carboxylic acid having 1 to 9 carbon atoms, in which the metal particles include sub-micro copper particles having a volume average particle diameter of 0.12 ?m to 0.8 ?m, and a content of the monovalent carboxylic acid having 1 to 9 carbon atoms is 0.015 part by mass to 0.2 part by mass with respect to 100 parts by mass of the metal particles.
    Type: Application
    Filed: January 18, 2018
    Publication date: April 30, 2020
    Inventors: Yuki KAWANA, Hideo NAKAKO, Motohiro NEGISHI, Dai ISHIKAWA, Chie SUGAMA, Yoshinori EJIRI
  • Publication number: 20200118811
    Abstract: Methods for etching a carbon-containing feature are provided. The methods may include: providing a substrate having a carbon-containing feature formed thereon in a reaction space; supplying helium gas and an oxidizing to the reaction space; generating a plasma within the reaction space from a gas mixture comprising helium gas and the oxidizing gas; and anisotropically etching the carbon-containing feature utilizing the plasma to cause lateral etching of the carbon-containing feature.
    Type: Application
    Filed: October 16, 2018
    Publication date: April 16, 2020
    Inventors: Mitsuya Utsuno, Tomohiro Kubota, Dai Ishikawa
  • Publication number: 20200108471
    Abstract: Provided is copper paste for joining including metal particles, and a dispersion medium. The metal particles include sub-micro copper particles having a volume-average particle size of 0.12 ?m to 0.8 ?m, and flake-shaped micro copper particles having a maximum particle size of 1 ?m to 20 ?m, and an aspect ratio of 4 or greater, and the amount of the micro copper particles contained, which are included in the metal particles and have a maximum particle size of 1 ?m to 20 ?m and an aspect ratio of less than 2, is 50% by mass or less on the basis of a total amount of the flake-shaped micro copper particles.
    Type: Application
    Filed: September 7, 2016
    Publication date: April 9, 2020
    Inventors: Dai ISHIKAWA, Yuki KAWANA, Chie SUGAMA, Hideo NAKAKO, Yoshinori EJIRI, Kazuhiko KURAFUCHI
  • Publication number: 20200075528
    Abstract: Provided is a metal paste for joints, containing: metal particles; and linear or branched monovalent aliphatic alcohol having 1 to 20 carbon atoms, in which the metal particles include sub-micro copper particles having a volume average particle diameter of 0.12 ?m to 0.8 ?M.
    Type: Application
    Filed: January 18, 2018
    Publication date: March 5, 2020
    Inventors: Yuki KAWANA, Hideo NAKAKO, Motohiro NEGISHI, Dai ISHIKAWA, Chie SUGAMA, Yoshinori EJIRI