Abstract: The present invention relates to a composition which contains an intestinal bacterium belonging to Bacteroidetes and having an inflammation reducing activity, or a substance derived from the intestinal bacterium and having an inflammation reducing activity and which has at least one activity selected from an anti-inflammatory activity, an immunoregulation activity, an epithelial barrier restoring activity, an IL-10-inducing activity, and an IL-22-inducing activity, and to an ameliorating agent for an inflammatory disease, an autoimmune disease, or an infectious disease containing the intestinal bacterium and the substance derived from the intestinal bacterium and having an inflammation reducing activity.

Abstract: An electron source according to the present disclosure includes a columnar portion made of a first material having an electron emission characteristic; and a tubular portion that is disposed to surround the columnar portion and made of a second material having a higher work function than the first material, wherein a hole that extends in a direction from one end face toward the other end face and has a substantially circular cross-sectional shape is formed in the tubular portion, and the columnar portion has a substantially triangular or substantially quadrangular cross-sectional shape and is fixed to the tubular portion in an abutting engagement with an inner surface of the hole.

Abstract: This member connection method includes a printing step. In the printing step, a coating film-formed region in which the coating film is formed, and a coating film non-formed region in which the coating film is not formed are formed in the print pattern, and the coating film-formed region is divided into a plurality of concentric regions and a plurality of radial regions by means of a plurality of line-shaped regions provided so as to connect various points, which are separated apart from one another in the marginal part of the connection region.

Abstract: Provided is a copper paste for forming a wick of a heat pipe, the copper paste containing copper particles, thermally decomposable resin particles, a dispersion medium for dispersing the copper particles and the thermally decomposable resin particles, and a thermally decomposable resin that is soluble in the dispersion medium.

Abstract: Methods of forming silicon nitride thin films on a substrate in a reaction space under high pressure are provided. The methods can include a plurality of plasma enhanced atomic layer deposition (PEALD) cycles, where at least one PEALD deposition cycle comprises contacting the substrate with a nitrogen plasma at a process pressure of 20 Torr to 500 Torr within the reaction space. In some embodiments the silicon precursor is a silyl halide, such as H2SiI2. In some embodiments the processes allow for the deposition of silicon nitride films having improved properties on three dimensional structures. For example, such silicon nitride films can have a ratio of wet etch rates on the top surfaces to the sidewall of about 1:1 in dilute HF.

Abstract: A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing the sidewall portion of the film by wet etching which removes the sidewall portion of the film more predominantly than the top/bottom portion according to the different chemical resistance properties.

Abstract: A method for manufacturing a thermoelectric conversion module of the present invention is a method for manufacturing a thermoelectric conversion module including a thermoelectric semiconductor part in which a plurality of p-type semiconductors and a plurality of n-type semiconductors are alternately arranged, and a high temperature side electrode bound to a binding surface of the p-type semiconductor and the n-type semiconductor on a high temperature heat source side and a low temperature side electrode bound to a binding surface of the p-type semiconductor and the n-type semiconductor on a low temperature heat source side, which electrically connect the p-type semiconductor and the n-type semiconductor adjacent to each other in series, and includes a binding step of binding at least one of the high temperature side electrode and the low temperature side electrode, and the p-type semiconductor and the n-type semiconductor together, by sintering a binding layer containing metal particles, which is provided bet

Abstract: A copper paste for pressureless bonding is a copper paste for pressureless bonding, containing: metal particles; and a dispersion medium, in which the metal particles include sub-micro copper particles having a volume average particle diameter of greater than or equal to 0.01 ?m and less than or equal to 0.8 ?m, and micro copper particles having a volume average particle diameter of greater than or equal to 2.0 ?m and less than or equal to 50 ?m, and the dispersion medium contains a solvent having a boiling point of higher than or equal to 300° C., and a content of the solvent having a boiling point of higher than or equal to 300° C. is greater than or equal to 2 mass % on the basis of a total mass of the copper paste for pressureless bonding.

Abstract: A copper paste for joining contains metal particles and a dispersion medium, in which the copper paste for joining contains copper particles as the metal particles, and the copper paste for joining contains dihydroterpineol as the dispersion medium. A method for manufacturing a joined body is a method for manufacturing a joined body which includes a first member, a second member, and a joining portion that joins the first member and the second member, the method including: a first step of printing the above-described copper paste for joining to at least one joining surface of the first member and the second member to prepare a laminate having a laminate structure in which the first member, the copper paste for joining, and the second member are laminated in this order; and a second step of sintering the copper paste for joining of the laminate.

Abstract: The present invention relates to a prophylactic and/or therapeutic agent for behavioral and psychological symptoms associated with neurodegenerative disease or impulsive symptoms associated with mental disease, which contains 7-[4-(4-benzo[b]thiophen-4-yl-piperazin-1-yl)butoxy]-1H-quinolin-2-one or a salt thereof as an active ingredient.

Abstract: Provided is a method for producing a joined body, the method including a first step of preparing a laminated body which includes a first member having a metal pillar provided on a surface thereof, a second member having an electrode pad provided on a surface thereof, and a joining material provided between the metal pillar and the electrode pad and containing metal particles and an organic compound, and a second step of heating the laminated body to sinter the joining material at a predetermined sintering temperature, in which the joining material satisfies the condition of the following Formula (I): (M1?M2)/M1×100?1.0??(I) [in Formula (I), M1 represents a mass of the joining material when a temperature of the joining material reaches the sintering temperature in the second step, and M2 represents a non-volatile content in the joining material.

Abstract: Provided is a metal paste for joints, containing: metal particles; and linear or branched monovalent aliphatic alcohol having 1 to 20 carbon atoms, in which the metal particles include sub-micro copper particles having a volume average particle diameter of 0.12 ?m to 0.8 ?M.

Abstract: Provided is A metal paste for joints, containing: metal particles; and monovalent carboxylic acid having 1 to 9 carbon atoms, in which the metal particles include sub-micro copper particles having a volume average particle diameter of 0.12 ?m to 0.8 ?m, and a content of the monovalent carboxylic acid having 1 to 9 carbon atoms is 0.015 part by mass to 0.2 part by mass with respect to 100 parts by mass of the metal particles.

Abstract: Methods of forming silicon nitride thin films on a substrate in a reaction space under high pressure are provided. The methods can include a plurality of plasma enhanced atomic layer deposition (PEALD) cycles, where at least one PEALD deposition cycle comprises contacting the substrate with a nitrogen plasma at a process pressure of 20 Torr to 500 Torr within the reaction space. In some embodiments the silicon precursor is a silyly halide, such as H2SiI2. In some embodiments the processes allow for the deposition of silicon nitride films having improved properties on three dimensional structures. For example, such silicon nitride films can have a ratio of wet etch rates on the top surfaces to the sidewall of about 1:1 in dilute HF.

Abstract: This member connection method includes a printing step. In the printing step, a coating film-formed region in which the coating film is formed, and a coating film non-formed region in which the coating film is not formed are formed in the print pattern, and the coating film-formed region is divided into a plurality of concentric regions and a plurality of radial regions by means of a plurality of line-shaped regions provided so as to connect various points, which are separated apart from one another in the marginal part of the connection region.

Abstract: Methods of forming silicon nitride thin films on a substrate in a reaction space under high pressure are provided. The methods can include a plurality of plasma enhanced atomic layer deposition (PEALD) cycles, where at least one PEALD deposition cycle comprises contacting the substrate with a nitrogen plasma at a process pressure of 20 Torr to 500 Torr within the reaction space. In some embodiments the silicon precursor is a silyly halide, such as H2SiI2. In some embodiments the processes allow for the deposition of silicon nitride films having improved properties on three dimensional structures. For example, such silicon nitride films can have a ratio of wet etch rates on the top surfaces to the sidewall of about 1:1 in dilute HF.

Abstract: Provided is copper paste for joining including metal particles, and a dispersion medium. The metal particles include sub-micro copper particles having a volume-average particle size of 0.12 ?m to 0.8 ?m, and flake-shaped micro copper particles having a maximum particle size of 1 ?m to 20 ?m, and an aspect ratio of 4 or greater, and the amount of the micro copper particles contained, which are included in the metal particles and have a maximum particle size of 1 ?m to 20 ?m and an aspect ratio of less than 2, is 50% by mass or less on the basis of a total amount of the flake-shaped micro copper particles.

Abstract: Examples of a substrate processing apparatus include a chamber, a shielding component that is a susceptor or an upper cover provided in the chamber, and a bevel mask that is provided in the chamber and has an inclined surface on which a vertical distance from the shielding component increases toward a center side of the shielding component.

Abstract: A copper paste for pressureless bonding is a copper paste for pressureless bonding, containing: metal particles; and a dispersion medium, in which the metal particles include sub-micro copper particles having a volume average particle diameter of greater than or equal to 0.01 ?m and less than or equal to 0.8 ?m, and micro copper particles having a volume average particle diameter of greater than or equal to 2.0 ?m and less than or equal to 50 ?m, and the dispersion medium contains a solvent having a boiling point of higher than or equal to 300° C., and a content of the solvent having a boiling point of higher than or equal to 300° C. is greater than or equal to 2 mass % on the basis of a total mass of the copper paste for pressureless bonding.

Abstract: A copper paste for pressureless bonding is a copper paste for pressureless bonding, containing: metal particles; and a dispersion medium, in which the metal particles include sub-micro copper particles having a volume average particle diameter of greater than or equal to 0.01 ?m and less than or equal to 0.8 ?m, and micro copper particles having a volume average particle diameter of greater than or equal to 2.0 ?m and less than or equal to 50 ?m, and the dispersion medium contains a solvent having a boiling point of higher than or equal to 300° C., and a content of the solvent having a boiling point of higher than or equal to 300° C. is greater than or equal to 2 mass % on the basis of a total mass of the copper paste for pressureless bonding.