Abstract: A method for supplying gas over a substrate in a reaction chamber wherein a substrate is placed on a pedestal, includes: supplying a first gas from a first side of the reaction chamber to a second side of the reaction chamber opposite to the first side; and adding a second gas to the first gas from sides of the reaction chamber other than the first side of the reaction chamber so that the second gas travels from sides of the substrate other than the first side in a downstream direction.

Abstract: A method for repairing process-related damage of a dielectric film includes: (i) adsorbing a first gas containing silicon on a surface of the damaged dielectric film without depositing a film in the absence of reactive species, (ii) adsorbing a second gas containing silicon on a surface of the dielectric film, followed by applying reactive species to the surface of the dielectric film, to form a monolayer film thereon, and (iii) repeating step (ii). The duration of exposing the surface to the first gas in step (i) is longer than the duration of exposing the surface to the second gas in step (ii).

Abstract: A coaxial cable includes an electric conductor, an insulating layer formed on a periphery of the electric conductor, wherein the insulating layer includes an insulating material including a fluorine-containing polymer obtained by grafting at least one compound selected from unsaturated carboxylic acids and esters of the unsaturated carboxylic acids to a tetrafluoroethylene-perfluoroalkylvinylether copolymer, a conductive layer formed on a periphery of the insulating layer, wherein the conductive layer includes a sintered product from a metallic nanoparticle paste, and an outer insulating layer formed on a periphery of the conductive layer.

Abstract: An insulation-coated wire has a conductor, and a semiconductive layer provided at an outer periphery of the conductor. The semiconductive layer has a resin coating including metal fine particles dispersed in a base resin, in which an average particle diameter of the metal fine particles is not greater than 1 ?m.

Abstract: A metal fine particle includes one amine compound, and one compound causing an alkylation of the amine compound. The amine compound and the alkylation causing compound cover a surface of the metal fine particle. The alkylation causing compound includes an alkyl halide compound. The alkyl halide compound includes one of iodomethane, iodoethane, 1-iodopropane, 2-iodopropane, 1-iodobutane, 1-iodo-2-methylpropane, 1-iodopentane, 1-iodo-3-methylbutane, 1-iodohexane, 1-iodoheptane, 1-iodooctane, 1-iodononane, 1-iododecane, 1-iodoundecane, 1-iodododecane, 1-iodotridecane, 1-iodotetradecane, 1-iodopentadecane, 1-iodohexadecane, 1-iodoheptadecane, 1-iodooctadecane, 1-iodononadecane, and 1-iodoeicosane.

Abstract: A metal fine particle for a conductive metal paste includes a protective agent covering a surface of the metal fine particle. An amount of heat generated per unit mass (g) of the metal fine particle is not less than 500 J at a temperature of an external heat source temperature in a range of 200° C. to 300° C. when being calcined by the external heat source. The protective agent includes at least one selected from the group consisting of dipropylamine, dibutylamine, triethylamine, tripropylamine, tributylamine, butanethiol, pentanethiol, hexanethiol, heptanethiol, octanethiol, nonanethiol, decanethiol, undecanethiol and dodecanethiol. The content of the protective agent is in a range of 0.1 to 20% by mass with respect to the mass of the metal fine particle.

Abstract: There is provided a producing method of metal fine particles or metal oxide fine particles for producing metal fine particles or metal oxide fine particles by atomizing raw materials by performing processes including an oxidizing process and a reducing process to the raw materials composed of metal or a metal compound.

Abstract: GD3-Mimetic peptides which contain an amino acid sequence represented by any of SEQ ID NOS: 1 to 4 or an amino acid sequence derived therefrom by substitution, deletion, addition, or insertion of one or more amino acid residues and attaining specific binding to an anti-GD3 antibody; and medicinal compositions containing the same.

Abstract: A composite metal fine particle material is provided, in which spherical silver nanoparticles synthesized from a silver compound, a solvent, a reducing agent, and a dispersant, and conductive fillers compose of non-spherical metal fine particles, are mixed. For example, the conductive fillers composed of the non-spherical metal fine particles are formed into slender columnar shapes, plate shapes, or ellipsoidal shapes.

Abstract: A coaxial cable includes an electric conductor, an insulating layer formed on a periphery of the electric conductor, wherein the insulating layer includes an insulating material including a fluorine-containing polymer obtained by grafting at least one compound selected from unsaturated carboxylic acids and esters of the unsaturated carboxylic acids to a tetrafluoroethylene-perfluoroalkylvinylether copolymer, a conductive layer formed on a periphery of the insulating layer, wherein the conductive layer includes a sintered product from a metallic nanoparticle paste, and an outer insulating layer formed on a periphery of the conductive layer.

Abstract: A coaxial cable includes an internal insulating layer formed on an outer periphery of an electric conductor, and a conductive layer formed on an outer periphery of the internal insulating layer, wherein the conductive layer is made of a metal nanoparticle paste sintered body obtained by sintering metal nanopraticles by irradiation of light toward a metal nanoparticle paste, and an external insulating layer is formed on an outer periphery of the conductive layer.

Abstract: An insulation-coated wire has a conductor, and a semiconductive layer provided at an outer periphery of the conductor, the semiconductive layer comprising a resin coating comprising metal fine particles dispersed in a base resin, in which an average particle diameter of the metal fine particles is not greater than 1 ?m.

Abstract: According to the present invention, an oxide film with the film quality almost equivalent to that of the thermal oxide can be formed by the low-temperature treatment. After removing an insulator on the active region of the substrate which constitutes a semiconductor wafer, an insulator made of, for example, silicon oxide is deposited on the main surface of the semiconductor wafer by the low pressure CVD method. This insulator is a film to form a gate insulator of MISFET in a later step. Subsequently, a plasma treatment is performed in an atmosphere containing oxygen (oxygen plasma treatment) to the insulator in the manner as schematically shown by the arrows. By so doing, the film quality of the insulator formed by the CVD method can be improved to the extent almost equivalent to that of the insulator formed of the thermal oxide.

Abstract: Nitrogen supplied into the high dielectric constant film is prevented from leaving from the film. A semiconductor device manufacturing method, includes the steps of: nitriding a high dielectric constant film, formed on a substrate by using plasma, heat treating the nitrided high dielectric constant film, and transferring the heat treated substrate, wherein the nitriding step and the heat treating step are performed consecutively or simultaneously in the same substrate processing apparatus without exposing the substrate to air, and the step of transferring the substrate is performed while, the substrate is exposed to air.

Abstract: GD3-Mimetic peptides which contain an amino acid sequence represented by any of SEQ ID NOS: 1 to 4 or an amino acid sequence derived therefrom by substitution, deletion, addition, or insertion of one or more amino acid residues and attaining specific binding to an anti-GD3 antibody; and medicinal compositions containing the same.

Abstract: GD3-Mimetic peptides which contain an amino acid sequence represented by any of SEQ ID NOS: 1 to 4 or an amino acid sequence derived therefrom by substitution, deletion, addition, or insertion of one or more amino acid residues and attaining specific binding to an anti-GD3 antibody; and medicinal compositions containing the same.

Abstract: A method of manufacturing a semiconductor integrated circuit device comprising forming a silicon oxide film as thin as 5 nm or less on the surfaces of p type wells and n type wells by wet oxidizing a substrate, heating the substrate in an atmosphere containing about 5% of an NO gas to introduce nitrogen into the silicon oxide film so as to form a silicon oxynitride film, exposing the substrate to a nitrogen plasma atmosphere to further introduce nitrogen into the silicon oxynitride film in order to form a silicon oxynitride gate insulating film having a first peak concentration near the interface with the substrate and a second peak concentration near the surface thereof. Thereby, the concentration of nitrogen in the gate insulating film is increased without raising the concentration of nitrogen near the interface between the substrate and the gate insulating film to a higher level than required.

Abstract: According to the present invention, an oxide film with the film quality almost equivalent to that of the thermal oxide can be formed by the low-temperature treatment. After removing an insulator on the active region of the substrate which constitutes a semiconductor wafer, an insulator made of, for example, silicon oxide is deposited on the main surface of the semiconductor wafer by the low pressure CVD method. This insulator is a film to form a gate insulator of MISFET in a later step. Subsequently, a plasma treatment is performed in an atmosphere containing oxygen (oxygen plasma treatment) to the insulator in the manner as schematically shown by the arrows. By so doing, the film quality of the insulator formed by the CVD method can be improved to the extent almost equivalent to that of the insulator formed of the thermal oxide.

Abstract: According to the present invention, an oxide film with the film quality almost equivalent to that of the thermal oxide can be formed by the low-temperature treatment. After removing an insulator on the active region of the substrate which constitutes a semiconductor wafer, an insulator made of, for example, silicon oxide is deposited on the main surface of the semiconductor wafer by the low pressure CVD method. This insulator is a film to form a gate insulator of MISFET in a later step. Subsequently, a plasma treatment is performed in an atmosphere containing oxygen (oxygen plasma treatment) to the insulator in the manner as schematically shown by the arrows. By so doing, the film quality of the insulator formed by the CVD method can be improved to the extent almost equivalent to that of the insulator formed of the thermal oxide.

Abstract: A method of manufacturing a semiconductor integrated circuit device comprising forming a silicon oxide film as thin as 5 nm or less on the surfaces of p type wells and n type wells by wet oxidizing a substrate, heating the substrate in an atmosphere containing about 5% of an NO gas to introduce nitrogen into the silicon oxide film so as to form a silicon oxynitride film, exposing the substrate to a nitrogen plasma atmosphere to further introduce nitrogen into the silicon oxynitride film in order to form a silicon oxynitride gate insulating film having a first peak concentration near the interface with the substrate and a second peak concentration near the surface thereof. Thereby, the concentration of nitrogen in the gate insulating film is increased without raising the concentration of nitrogen near the interface between the substrate and the gate insulating film to a higher level than required.