Patents by Inventor Daigo Ito
Daigo Ito has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10020322Abstract: A highly reliable semiconductor device which includes an oxide semiconductor is provided. Alternatively, a transistor having normally-off characteristics which includes an oxide semiconductor is provided. The transistor includes a first conductor, a first insulator, a second insulator, a third insulator, a first oxide, an oxide semiconductor, a second conductor, a second oxide, a fourth insulator, a third conductor, a fourth conductor, a fifth insulator, and a sixth insulator. The second conductor is separated from the sixth insulator by the second oxide. The third conductor and the fourth conductor are separated from the sixth insulator by the fifth insulator. The second oxide has a function of suppressing permeation of oxygen as long as oxygen contained in the sixth insulator is sufficiently supplied to the oxide semiconductor through the second oxide. The fifth insulator has a barrier property against oxygen.Type: GrantFiled: December 27, 2016Date of Patent: July 10, 2018Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Daigo Ito, Takahisa Ishiyama, Katsuaki Tochibayashi, Yoshinori Ando, Yasutaka Suzuki, Mitsuhiro Ichijo, Toshiya Endo, Shunpei Yamazaki
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Publication number: 20180138208Abstract: To provide a semiconductor device capable of retaining data for a long time. The semiconductor device includes a first transistor, an insulator covering the first transistor, and a second transistor over the insulator. The first transistor includes a first gate electrode, a second gate electrode overlapping with the first gate electrode, and a semiconductor between the first gate electrode and the second gate electrode. The first gate electrode is electrically connected to one of a source and a drain of the second transistor.Type: ApplicationFiled: October 26, 2017Publication date: May 17, 2018Inventors: Daigo ITO, Yutaka OKAZAKI, Takahisa ISHIYAMA
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Publication number: 20180115016Abstract: An all-solid-state battery includes a pair of electrode layers consisting of first and second electrode layers, and a solid-state electrolyte layer positioned between the pair of electrode layers, wherein the first electrode layer contains an electrode active material having an olivine-type crystalline structure, the solid-state electrolyte layer contains a solid-state electrolyte having a NASICON-type crystalline structure, and the solid-state electrolyte layer in the vicinity of the first electrode layer is expressed by a composition formula LixAyCozM?aM?bP3Oc. The all-solid-state battery can improve the long-term cycle stability.Type: ApplicationFiled: October 24, 2017Publication date: April 26, 2018Inventors: Daigo ITO, Takeyuki FUKUSHIMA, Hidenori SOMEI, Yoichiro OGATA, Chie KAWAMURA
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Publication number: 20180090784Abstract: An all-solid-state secondary battery, including: a solid electrolyte layer; a positive electrode layer including a positive electrode active material layer and a first current collector layer; a negative electrode layer including a second current collector layer, the positive electrode layer and the negative electrode layer sandwiching the solid electrolyte layer; and external electrodes connected respectively to the first current collector layer and the second current collector layer, wherein the positive electrode active material layer is formed of an olivine-type active material, wherein the solid electrolyte layer is formed of a phosphate having a NASICON-type structure, and wherein the solid electrolyte layer contains particulate precipitate having an olivine-type crystal structure that includes a same element as an element forming the positive electrode active material layer.Type: ApplicationFiled: November 29, 2017Publication date: March 29, 2018Applicant: TAIYO YUDEN CO., LTD.Inventors: Daigo ITO, Masaki MOCHIGI, Masataka TOMITA, Toshimasa SUZUKI
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Publication number: 20180033807Abstract: A highly reliable semiconductor device capable of retaining data for a long period is provided. The transistor includes a first gate electrode, a first gate insulator over the first gate electrode, a first oxide and a second oxide over the first gate insulator, a first conductor over the first oxide, a second conductor over the second oxide, a third oxide covering the first gate insulator, the first oxide, the first conductor, the second oxide, and the second conductor, a second gate insulator over the third oxide, and a second gate electrode over the second gate insulator. An end portion of the second gate electrode is positioned between an end portion of the first conductor and an end portion of the second conductor in a channel length direction.Type: ApplicationFiled: July 25, 2017Publication date: February 1, 2018Inventors: Shinpei MATSUDA, Daigo ITO, Daisuke MATSUBAYASHI, Yasutaka SUZUKI, Etsuko KAMATA, Yutaka SHIONOIRI, Shuhei NAGATSUKA
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Patent number: 9871145Abstract: A semiconductor device includes a first insulating layer over a substrate, a first metal oxide layer over the first insulating layer, an oxide semiconductor layer over the first metal oxide layer, a second metal oxide layer over the oxide semiconductor layer, a gate insulating layer over the second metal oxide layer, a second insulating layer over the second metal oxide layer, and a gate electrode layer over the gate insulating layer. The gate insulating layer includes a region in contact with a side surface of the gate electrode layer. The second insulating layer includes a region in contact with the gate insulating layer. The oxide semiconductor layer includes first to third regions. The first region includes a region overlapping with the gate electrode layer. The second region, which is between the first and third regions, includes a region overlapping with the gate insulating layer or the second insulating layer.Type: GrantFiled: June 21, 2017Date of Patent: January 16, 2018Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Daigo Ito, Daisuke Matsubayashi, Masaharu Nagai, Yoshiaki Yamamoto, Takashi Hamada, Yutaka Okazaki, Shinya Sasagawa, Motomu Kurata, Naoto Yamade
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Patent number: 9865899Abstract: An all-solid-state secondary battery, including: a solid electrolyte layer; a positive electrode layer including a positive electrode active material layer and a first current collector layer; a negative electrode layer including a second current collector layer, the positive electrode layer and the negative electrode layer sandwiching the solid electrolyte layer; and external electrodes connected respectively to the first current collector layer and the second current collector layer, wherein the positive electrode active material layer is formed of an olivine-type active material, wherein the solid electrolyte layer is formed of a phosphate having a NASICON-type structure, and wherein the solid electrolyte layer contains particulate precipitate having an olivine-type crystal structure that includes a same element as an element forming the positive electrode active material layer.Type: GrantFiled: December 16, 2015Date of Patent: January 9, 2018Assignee: TAIYO YUDEN CO., LTD.Inventors: Daigo Ito, Masaki Mochigi, Masataka Tomita, Toshimasa Suzuki
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Publication number: 20170288064Abstract: A semiconductor device includes a first insulating layer over a substrate, a first metal oxide layer over the first insulating layer, an oxide semiconductor layer over the first metal oxide layer, a second metal oxide layer over the oxide semiconductor layer, a gate insulating layer over the second metal oxide layer, a second insulating layer over the second metal oxide layer, and a gate electrode layer over the gate insulating layer. The gate insulating layer includes a region in contact with a side surface of the gate electrode layer. The second insulating layer includes a region in contact with the gate insulating layer. The oxide semiconductor layer includes first to third regions. The first region includes a region overlapping with the gate electrode layer. The second region, which is between the first and third regions, includes a region overlapping with the gate insulating layer or the second insulating layer.Type: ApplicationFiled: June 21, 2017Publication date: October 5, 2017Inventors: Daigo ITO, Daisuke MATSUBAYASHI, Masaharu NAGAI, Yoshiaki YAMAMOTO, Takashi HAMADA, Yutaka OKAZAKI, Shinya SASAGAWA, Motomu KURATA, Naoto YAMADE
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Patent number: 9768317Abstract: Provided is a semiconductor device which can suppress an increase in oxygen vacancies in an oxide semiconductor layer and a manufacturing method of the semiconductor device. The semiconductor device includes a first oxide semiconductor layer over the first insulating layer; a second oxide semiconductor layer over the first oxide semiconductor layer; a third oxide semiconductor layer over the second oxide semiconductor layer; a source electrode layer and a drain electrode layer each over the third oxide semiconductor layer; a fourth semiconductor layer over the source and drain electrode layers, and the third oxide semiconductor layer; a gate insulating layer over the fourth oxide semiconductor layer; a gate electrode layer over the gate electrode layer and overlapping with the source and drain electrode layers, and the fourth oxide semiconductor layer; and a second insulating layer over the first insulating layer, and the source, gate, and drain electrode layers.Type: GrantFiled: December 7, 2015Date of Patent: September 19, 2017Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Daigo Ito, Takahisa Ishiyama, Kazuya Hanaoka
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Publication number: 20170186779Abstract: A highly reliable semiconductor device which includes an oxide semiconductor is provided. Alternatively, a transistor having normally-off characteristics which includes an oxide semiconductor is provided. The transistor includes a first conductor, a first insulator, a second insulator, a third insulator, a first oxide, an oxide semiconductor, a second conductor, a second oxide, a fourth insulator, a third conductor, a fourth conductor, a fifth insulator, and a sixth insulator. The second conductor is separated from the sixth insulator by the second oxide. The third conductor and the fourth conductor are separated from the sixth insulator by the fifth insulator. The second oxide has a function of suppressing permeation of oxygen as long as oxygen contained in the sixth insulator is sufficiently supplied to the oxide semiconductor through the second oxide. The fifth insulator has a barrier property against oxygen.Type: ApplicationFiled: December 27, 2016Publication date: June 29, 2017Inventors: Daigo ITO, Takahisa ISHIYAMA, Katsuaki TOCHIBAYASHI, Yoshinori ANDO, Yasutaka SUZUKI, Mitsuhiro ICHIJO, Toshiya ENDO, Shunpei YAMAZAKI
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Patent number: 9691905Abstract: A semiconductor device includes a first insulating layer over a substrate, a first metal oxide layer over the first insulating layer, an oxide semiconductor layer over the first metal oxide layer, a second metal oxide layer over the oxide semiconductor layer, a gate insulating layer over the second metal oxide layer, a second insulating layer over the second metal oxide layer, and a gate electrode layer over the gate insulating layer. The gate insulating layer includes a region in contact with a side surface of the gate electrode layer. The second insulating layer includes a region in contact with the gate insulating layer. The oxide semiconductor layer includes first to third regions. The first region includes a region overlapping with the gate electrode layer. The second region, which is between the first and third regions, includes a region overlapping with the gate insulating layer or the second insulating layer.Type: GrantFiled: June 15, 2016Date of Patent: June 27, 2017Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Daigo Ito, Daisuke Matsubayashi, Masaharu Nagai, Yoshiaki Yamamoto, Takashi Hamada, Yutaka Okazaki, Shinya Sasagawa, Motomu Kurata, Naoto Yamade
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Publication number: 20170125841Abstract: A solid-state rechargeable battery includes a pair of electrode layers and a solid electrolyte layer interposed between the pair of electrode layers. The pair of electrode layers each include a phosphate having an olivine crystal structure. The phosphate contains a transition metal and lithium.Type: ApplicationFiled: September 7, 2016Publication date: May 4, 2017Applicant: TAIYO YUDEN CO. LTD.Inventor: Daigo ITO
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Publication number: 20160372606Abstract: A semiconductor device includes a first insulating layer over a substrate, a first metal oxide layer over the first insulating layer, an oxide semiconductor layer over the first metal oxide layer, a second metal oxide layer over the oxide semiconductor layer, a gate insulating layer over the second metal oxide layer, a second insulating layer over the second metal oxide layer, and a gate electrode layer over the gate insulating layer. The gate insulating layer includes a region in contact with a side surface of the gate electrode layer. The second insulating layer includes a region in contact with the gate insulating layer. The oxide semiconductor layer includes first to third regions. The first region includes a region overlapping with the gate electrode layer. The second region, which is between the first and third regions, includes a region overlapping with the gate insulating layer or the second insulating layer.Type: ApplicationFiled: June 15, 2016Publication date: December 22, 2016Inventors: Daigo ITO, Daisuke MATSUBAYASHI, Masaharu NAGAI, Yoshiaki YAMAMOTO, Takashi HAMADA, Yutaka OKAZAKI, Shinya SASAGAWA, Motomu KURATA, Naoto YAMADE
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Publication number: 20160329434Abstract: The semiconductor device includes a first insulating layer; a first oxide insulating layer over the first insulating layer; an oxide semiconductor layer over the first oxide insulating layer; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; a second oxide insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; a gate insulating layer over the second oxide insulating layer; a gate electrode layer over the gate insulating layer; a second insulating layer over the first insulating layer, the source electrode layer, the drain electrode layer, the second oxide insulating layer, the gate insulating layer, and the gate electrode layer; and a third insulating layer over the first insulating layer, the source electrode layer, the drain electrode layer, and the second insulating layer.Type: ApplicationFiled: May 2, 2016Publication date: November 10, 2016Inventors: Daigo ITO, Takahisa ISHIYAMA, Katsuaki TOCHIBAYASHI, Kazuya HANAOKA
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Patent number: 9379192Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a source electrode layer and a drain electrode layer which are electrically connected to an oxide semiconductor layer, a gate insulating film over the oxide semiconductor layer; the source electrode layer, and the drain electrode layer; and a gate electrode layer that overlaps with the oxide semiconductor layer, the source electrode layer, and the drain electrode layer with the gate insulating film positioned therebetween. The source electrode layer and the drain electrode layer each include a first conductive layer and a second conductive layer. The first conductive layer is in contact with a top surface of the oxide semiconductor layer. The second conductive layer is in contact with a side surface of the oxide semiconductor layer. The first conductive layer and the second conductive layer are electrically connected to each other.Type: GrantFiled: December 17, 2014Date of Patent: June 28, 2016Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Daigo Ito, Kazuya Hanaoka
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Publication number: 20160163870Abstract: Provided is a semiconductor device which can suppress an increase in oxygen vacancies in an oxide semiconductor layer and a manufacturing method of the semiconductor device. The semiconductor device includes a first oxide semiconductor layer over the first insulating layer; a second oxide semiconductor layer over the first oxide semiconductor layer; a third oxide semiconductor layer over the second oxide semiconductor layer; a source electrode layer and a drain electrode layer each over the third oxide semiconductor layer; a fourth semiconductor layer over the source and drain electrode layers, and the third oxide semiconductor layer; a gate insulating layer over the fourth oxide semiconductor layer; a gate electrode layer over the gate electrode layer and overlapping with the source and drain electrode layers, and the fourth oxide semiconductor layer; and a second insulating layer over the first insulating layer, and the source, gate, and drain electrode layers.Type: ApplicationFiled: December 7, 2015Publication date: June 9, 2016Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Daigo Ito, Takahisa ISHIYAMA, Kazuya HANAOKA
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Publication number: 20160141716Abstract: An all-solid-state secondary battery, including: a solid electrolyte layer; a positive electrode layer including a positive electrode active material layer and a first current collector layer; a negative electrode layer including a second current collector layer, the positive electrode layer and the negative electrode layer sandwiching the solid electrolyte layer; and external electrodes connected respectively to the first current collector layer and the second current collector layer, wherein the positive electrode active material layer is formed of an olivine-type active material, wherein the solid electrolyte layer is formed of a phosphate having a NASICON-type structure, and wherein the solid electrolyte layer contains particulate precipitate having an olivine-type crystal structure that includes a same element as an element forming the positive electrode active material layer.Type: ApplicationFiled: December 16, 2015Publication date: May 19, 2016Applicant: TAIYO YUDEN CO., LTD.Inventors: Daigo ITO, Masaki MOCHIGI, Masataka TOMITA, Toshimasa SUZUKI
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Patent number: 9293599Abstract: A transistor with stable electric characteristics is provided. A transistor with small variation in electrical characteristics is provided. A miniaturized transistor is provided. A transistor having low off-state current is provided. A transistor having high on-state current is provided. A semiconductor device including the transistor is provided. One embodiment of the present invention is a semiconductor device including an island-shaped stack including a base insulating film and an oxide semiconductor film over the base insulating film; a protective insulating film facing a side surface of the stack and not facing a top surface of the stack; a first conductive film and a second conductive film which are provided over and in contact with the stack to be apart from each other; an insulating film over the stack, the first conductive film, and the second conductive film; and a third conductive film over the insulating film.Type: GrantFiled: May 15, 2014Date of Patent: March 22, 2016Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Suguru Hondo, Daigo Ito
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Patent number: 9276125Abstract: A miniaturized transistor having high electrical characteristics is provided with high yield. In a semiconductor device including the transistor, high performance, high reliability, and high productivity can be achieved. The semiconductor device includes a base insulating film, an oxide semiconductor film with a bottom surface and side surfaces in the base insulating film and a top surface exposed from the base insulating film, a source electrode and a drain electrode over the base insulating film and the oxide semiconductor film, a gate insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, and a gate electrode over the gate insulating film and overlapping the oxide semiconductor film.Type: GrantFiled: February 26, 2014Date of Patent: March 1, 2016Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Akihisa Shimomura, Tomoaki Moriwaka, Daigo Ito
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Patent number: 9209267Abstract: An oxide semiconductor film is formed over a substrate. A sacrifice film is formed to such a thickness that the local maximum of the concentration distribution of an injected substance injected into the oxide semiconductor film in the depth direction of the oxide semiconductor film is located in a region from an interface between the substrate and the oxide semiconductor film to a surface of the oxide semiconductor film. Oxygen ions are injected as the injected substance into the oxide semiconductor film through the sacrifice film at such an acceleration voltage that the local maximum of the concentration distribution of the injected substance in the depth direction of the oxide semiconductor film is located in the region, and then the sacrifice film is removed. Further, a semiconductor device is manufactured using the oxide semiconductor film.Type: GrantFiled: June 9, 2015Date of Patent: December 8, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Daigo Ito, Yuichi Sato, Kosei Noda