Patents by Inventor Daigo Ito

Daigo Ito has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140339547
    Abstract: A transistor with stable electric characteristics is provided. A transistor with small variation in electrical characteristics is provided. A miniaturized transistor is provided. A transistor having low off-state current is provided. A transistor having high on-state current is provided. A semiconductor device including the transistor is provided. One embodiment of the present invention is a semiconductor device including an island-shaped stack including a base insulating film and an oxide semiconductor film over the base insulating film; a protective insulating film facing a side surface of the stack and not facing a top surface of the stack; a first conductive film and a second conductive film which are provided over and in contact with the stack to be apart from each other; an insulating film over the stack, the first conductive film, and the second conductive film; and a third conductive film over the insulating film.
    Type: Application
    Filed: May 15, 2014
    Publication date: November 20, 2014
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Suguru HONDO, Daigo Ito
  • Publication number: 20140246668
    Abstract: A miniaturized transistor having high electrical characteristics is provided with high yield. In a semiconductor device including the transistor, high performance, high reliability, and high productivity can be achieved. The semiconductor device includes a base insulating film, an oxide semiconductor film with a bottom surface and side surfaces in the base insulating film and a top surface exposed from the base insulating film, a source electrode and a drain electrode over the base insulating film and the oxide semiconductor film, a gate insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, and a gate electrode over the gate insulating film and overlapping the oxide semiconductor film.
    Type: Application
    Filed: February 26, 2014
    Publication date: September 4, 2014
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Akihisa Shimomura, Tomoaki Moriwaka, Daigo Ito
  • Publication number: 20140209898
    Abstract: When an oxide semiconductor film is microfabricated to have an island shape, with the use of a hard mask, unevenness of an end portion of the oxide semiconductor film can be suppressed. Specifically, a hard mask is formed over the oxide semiconductor film, a resist is formed over the hard mask, light exposure is performed to form a resist mask, the hard mask is processed using the resist mask as a mask, the oxide semiconductor film is processed using the processed hard mask as a mask, the resist mask and the processed hard mask are removed, a source electrode and a drain electrode are formed in contact with the processed oxide semiconductor film, a gate insulating film is formed over the source electrode and the drain electrode, and a gate electrode is formed over the gate insulating film, the gate electrode overlapping with the oxide semiconductor film.
    Type: Application
    Filed: January 23, 2014
    Publication date: July 31, 2014
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yoshiaki Yamamoto, Koichi Ito, Motomu Kurata, Taiga Muraoka, Daigo Ito
  • Patent number: 8758940
    Abstract: A lithium-titanium complex oxide containing Li4Ti5O12 is characterized in that, based on SEM observation, the number-based percentage of particles whose size is less than 0.1 ?m is 5 to 15% or 40 to 65%, the number-based percentage of particles whose size is 0.3 to 1.5 ?m is 15 to 30%, the specific surface area measured by the BET method is 5.8 to 10.1 m2/g, and the average particle size D50 according to the particle size distribution measured by laser diffraction measurement is preferably 0.6 to 1.5 ?m.
    Type: Grant
    Filed: November 28, 2012
    Date of Patent: June 24, 2014
    Assignee: Taiyo Yuden Co., Ltd.
    Inventors: Keiko Shiroki, Chie Kawamura, Daigo Ito, Akitoshi Wagawa, Masaki Mochigi, Toshimasa Suzuki
  • Patent number: 8741172
    Abstract: A lithium-titanium complex oxide whose total water generation amount and total carbon dioxide generation amount measured by thermal decomposition GC-MS are preferably 1500 wt ppm or less and 2000 wt ppm or less, respectively, is obtained by subjecting a mixture of titanium compound and lithium compound to a heat treatment at 600° C. or above, cooling the obtained reaction product to 50° C. or below, and then subjecting the cooled reaction product to a reheat treatment involving heating to the maximum temperature of 300 to 700° C. and then cooling, wherein the dew point of the ambience of the reheat treatment is controlled at ?30° C. or below at a temperature of 200° C. or above.
    Type: Grant
    Filed: November 28, 2012
    Date of Patent: June 3, 2014
    Assignee: Taiyo Yuden Co., Ltd.
    Inventors: Daigo Ito, Chie Kawamura, Masaki Mochigi, Toshimasa Suzuki
  • Publication number: 20140054496
    Abstract: Provided is a slurry for lithium ion secondary battery electrodes, which has proper binding properties between active materials and between an active material and a current collector, an electrode using the slurry, and a lithium ion secondary battery using the electrode and having both a high initial discharge capacity and an excellent charge-discharge high-temperature cycle characteristic. The present invention relates to a slurry for lithium ion secondary battery electrodes, which is obtained using a binder for battery electrodes and an active material and has a pH of 3.0 to 6.0. Preferably, the slurry contains a binder for battery electrodes in an amount of 0.2 to 4.0% by mass based on the active material.
    Type: Application
    Filed: January 31, 2012
    Publication date: February 27, 2014
    Applicant: SHOWA DENKO K. K.
    Inventors: Mitsuru Hanasaki, Kazunari Fukase, Daigo Ito
  • Publication number: 20130343983
    Abstract: A lithium-titanium complex oxide whose total water generation amount and total carbon dioxide generation amount measured by thermal decomposition GC-MS are preferably 1500 wt ppm or less and 2000 wt ppm or less, respectively, is obtained by subjecting a mixture of titanium compound and lithium compound to a heat treatment at 600° C. or above, cooling the obtained reaction product to 50° C. or below, and then subjecting the cooled reaction product to a reheat treatment involving heating to the maximum temperature of 300 to 700° C. and then cooling, wherein the dew point of the ambience of the reheat treatment is controlled at ?30° C. or below at a temperature of 200° C. or above.
    Type: Application
    Filed: November 28, 2012
    Publication date: December 26, 2013
    Applicant: TAIYO YUDEN CO., LTD.
    Inventors: Daigo ITO, Chie KAWAMURA, Masaki MOCHIGI, Toshimasa SUZUKI
  • Publication number: 20130260251
    Abstract: A lithium-titanium complex oxide containing Li4Ti5O12 is characterized in that, based on SEM observation, the number-based percentage of particles whose size is less than 0.1 ?m is 5 to 15% or 40 to 65%, the number-based percentage of particles whose size is 0.3 to 1.5 ?m is 15 to 30%, the specific surface area measured by the BET method is 5.8 to 10.1 m2/g, and the average particle size D50 according to the particle size distribution measured by laser diffraction measurement is preferably 0.6 to 1.5 ?m.
    Type: Application
    Filed: November 28, 2012
    Publication date: October 3, 2013
    Applicant: TAIYO YUDEN CO., LTD.
    Inventors: Keiko SHIROKI, Chie KAWAMURA, Daigo ITO, Akitoshi WAGAWA, Masaki MOCHIGI, Toshimasa SUZUKI
  • Publication number: 20120178238
    Abstract: An SOI substrate including a semiconductor layer whose thickness is even is provided. According to a method for manufacturing the SOI substrate, the semiconductor layer is formed over a base substrate. In the method, a first surface of a semiconductor substrate is polished to be planarized; a second surface of the semiconductor substrate which is opposite to the first surface is irradiated with ions, so that an embrittled region is formed in the semiconductor substrate; the second surface is attached to the base substrate, so that the semiconductor substrate is attached to the base substrate; and separation in the embrittled region is performed. The value of 3? (? denotes a standard deviation of thickness of the semiconductor layer) is less than or equal to 1.5 nm.
    Type: Application
    Filed: December 30, 2011
    Publication date: July 12, 2012
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Keiichi SEKIGUCHI, Kazuya HANAOKA, Daigo ITO
  • Publication number: 20050282387
    Abstract: A metal polish composition contains an amine represented by general formula (1): wherein m represents an integer of from 1 to 3 and n represents an integer of from 0 to 2, with m and n being such that (3-n-m) is an integer of from 0 to 2; A represents a straight-chained or branched alkylene, phenylene or substituted phenylene group having 1 to 5 carbon atoms; R1 and R3 each independently represent hydrogen or a substituted or non-substituted hydrocarbon group having 1 to 5 carbon atoms; R3 represents a substituted or non-substituted hydrocarbon group having 1 to 20 carbon atoms; a combination of R1 and R2, a combination of R2 and R3 and a combination of A and R3 can form a ring structure; and R1, R2, R3 and A can individually form a ring structure.
    Type: Application
    Filed: June 6, 2003
    Publication date: December 22, 2005
    Inventors: Takashi Sato, Ayako Nishioka, Daigo Ito