Abstract: An oxide semiconductor film is formed over a substrate. A sacrifice film is formed to such a thickness that the local maximum of the concentration distribution of an injected substance injected into the oxide semiconductor film in the depth direction of the oxide semiconductor film is located in a region from an interface between the substrate and the oxide semiconductor film to a surface of the oxide semiconductor film. Oxygen ions are injected as the injected substance into the oxide semiconductor film through the sacrifice film at such an acceleration voltage that the local maximum of the concentration distribution of the injected substance in the depth direction of the oxide semiconductor film is located in the region, and then the sacrifice film is removed. Further, a semiconductor device is manufactured using the oxide semiconductor film.

Abstract: A semiconductor device having favorable electric characteristics is provided. An oxide semiconductor layer includes first and second regions apart from each other, a third region which is between the first and second regions and overlaps with a gate electrode layer with a gate insulating film provided therebetween, a fourth region between the first and third regions, and a fifth region between the second and third regions. A source electrode layer includes first and second conductive layers. A drain electrode layer includes third and fourth conductive layers. The first conductive layer is formed only over the first region. The second conductive layer is in contact with an insulating layer, the first conductive layer, and the first region. The third conductive layer is formed only over the second region. The fourth conductive layer is in contact with the insulating layer, the third conductive layer, and the second region.

Abstract: When an oxide semiconductor film is microfabricated to have an island shape, with the use of a hard mask, unevenness of an end portion of the oxide semiconductor film can be suppressed. Specifically, a hard mask is formed over the oxide semiconductor film, a resist is formed over the hard mask, light exposure is performed to form a resist mask, the hard mask is processed using the resist mask as a mask, the oxide semiconductor film is processed using the processed hard mask as a mask, the resist mask and the processed hard mask are removed, a source electrode and a drain electrode are formed in contact with the processed oxide semiconductor film, a gate insulating film is formed over the source electrode and the drain electrode, and a gate electrode is formed over the gate insulating film, the gate electrode overlapping with the oxide semiconductor film.

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a source electrode layer and a drain electrode layer which are electrically connected to an oxide semiconductor layer, a gate insulating film over the oxide semiconductor layer; the source electrode layer, and the drain electrode layer; and a gate electrode layer that overlaps with the oxide semiconductor layer, the source electrode layer, and the drain electrode layer with the gate insulating film positioned therebetween. The source electrode layer and the drain electrode layer each include a first conductive layer and a second conductive layer. The first conductive layer is in contact with a top surface of the oxide semiconductor layer. The second conductive layer is in contact with a side surface of the oxide semiconductor layer. The first conductive layer and the second conductive layer are electrically connected to each other.

Abstract: In relation to a polymerizable composition for forming a transparent optical resin layer to be interposed between an image display section of an image display device and a light-transmissive protective section thereof, the present invention provides a polymerizable composition that does not give rise to display defects caused by the deformation of the image display section, enables high-luminance, high-contrast image displaying, has excellent heat resistance, and also has a low dielectric constant. This polymerizable composition comprises: (1) a urethane (meth)acrylate obtained by reacting a hydrogenated polyolefin polyol and a compound having an isocyanato group and a (meth)acryloyl group; (2) a (meth)acryloyl-group-containing compound having a hydrocarbon group with a carbon number of 6 or greater; and (3) a photopolymerization initiator.

Abstract: An SOI substrate including a semiconductor layer whose thickness is even is provided. According to a method for manufacturing the SOI substrate, the semiconductor layer is formed over a base substrate. In the method, a first surface of a semiconductor substrate is polished to be planarized; a second surface of the semiconductor substrate which is opposite to the first surface is irradiated with ions, so that an embrittled region is formed in the semiconductor substrate; the second surface is attached to the base substrate, so that the semiconductor substrate is attached to the base substrate; and separation in the embrittled region is performed. The value of 3? (? denotes a standard deviation of thickness of the semiconductor layer) is less than or equal to 1.5 nm.

Abstract: To provide a semiconductor device in which a large current can flow. To provide a semiconductor device which can be driven stably at a high driving voltage. The semiconductor device includes a semiconductor layer, a first electrode and a second electrode electrically connected to the semiconductor layer and apart from each other in a region overlapping with the semiconductor layer, a first gate electrode and a second gate electrode with the semiconductor layer therebetween, a first gate insulating layer between the semiconductor layer and the first gate electrode, and a second gate insulating layer between the semiconductor layer and the second gate electrode. The first gate electrode overlaps with part of the first electrode, the semiconductor layer, and part of the second electrode. The second gate electrode overlaps with the semiconductor layer and part of the first electrode, and does not overlap with the second electrode.

Abstract: A transistor with stable electric characteristics is provided. A transistor with small variation in electrical characteristics is provided. A miniaturized transistor is provided. A transistor having low off-state current is provided. A transistor having high on-state current is provided. A semiconductor device including the transistor is provided. One embodiment of the present invention is a semiconductor device including an island-shaped stack including a base insulating film and an oxide semiconductor film over the base insulating film; a protective insulating film facing a side surface of the stack and not facing a top surface of the stack; a first conductive film and a second conductive film which are provided over and in contact with the stack to be apart from each other; an insulating film over the stack, the first conductive film, and the second conductive film; and a third conductive film over the insulating film.

Abstract: A miniaturized transistor having high electrical characteristics is provided with high yield. In a semiconductor device including the transistor, high performance, high reliability, and high productivity can be achieved. The semiconductor device includes a base insulating film, an oxide semiconductor film with a bottom surface and side surfaces in the base insulating film and a top surface exposed from the base insulating film, a source electrode and a drain electrode over the base insulating film and the oxide semiconductor film, a gate insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, and a gate electrode over the gate insulating film and overlapping the oxide semiconductor film.

Abstract: When an oxide semiconductor film is microfabricated to have an island shape, with the use of a hard mask, unevenness of an end portion of the oxide semiconductor film can be suppressed. Specifically, a hard mask is formed over the oxide semiconductor film, a resist is formed over the hard mask, light exposure is performed to form a resist mask, the hard mask is processed using the resist mask as a mask, the oxide semiconductor film is processed using the processed hard mask as a mask, the resist mask and the processed hard mask are removed, a source electrode and a drain electrode are formed in contact with the processed oxide semiconductor film, a gate insulating film is formed over the source electrode and the drain electrode, and a gate electrode is formed over the gate insulating film, the gate electrode overlapping with the oxide semiconductor film.

Abstract: A lithium-titanium complex oxide containing Li4Ti5O12 is characterized in that, based on SEM observation, the number-based percentage of particles whose size is less than 0.1 ?m is 5 to 15% or 40 to 65%, the number-based percentage of particles whose size is 0.3 to 1.5 ?m is 15 to 30%, the specific surface area measured by the BET method is 5.8 to 10.1 m2/g, and the average particle size D50 according to the particle size distribution measured by laser diffraction measurement is preferably 0.6 to 1.5 ?m.

Abstract: A lithium-titanium complex oxide whose total water generation amount and total carbon dioxide generation amount measured by thermal decomposition GC-MS are preferably 1500 wt ppm or less and 2000 wt ppm or less, respectively, is obtained by subjecting a mixture of titanium compound and lithium compound to a heat treatment at 600° C. or above, cooling the obtained reaction product to 50° C. or below, and then subjecting the cooled reaction product to a reheat treatment involving heating to the maximum temperature of 300 to 700° C. and then cooling, wherein the dew point of the ambience of the reheat treatment is controlled at ?30° C. or below at a temperature of 200° C. or above.

Abstract: Provided is a slurry for lithium ion secondary battery electrodes, which has proper binding properties between active materials and between an active material and a current collector, an electrode using the slurry, and a lithium ion secondary battery using the electrode and having both a high initial discharge capacity and an excellent charge-discharge high-temperature cycle characteristic. The present invention relates to a slurry for lithium ion secondary battery electrodes, which is obtained using a binder for battery electrodes and an active material and has a pH of 3.0 to 6.0. Preferably, the slurry contains a binder for battery electrodes in an amount of 0.2 to 4.0% by mass based on the active material.

Abstract: A lithium-titanium complex oxide whose total water generation amount and total carbon dioxide generation amount measured by thermal decomposition GC-MS are preferably 1500 wt ppm or less and 2000 wt ppm or less, respectively, is obtained by subjecting a mixture of titanium compound and lithium compound to a heat treatment at 600° C. or above, cooling the obtained reaction product to 50° C. or below, and then subjecting the cooled reaction product to a reheat treatment involving heating to the maximum temperature of 300 to 700° C. and then cooling, wherein the dew point of the ambience of the reheat treatment is controlled at ?30° C. or below at a temperature of 200° C. or above.

Abstract: A lithium-titanium complex oxide containing Li4Ti5O12 is characterized in that, based on SEM observation, the number-based percentage of particles whose size is less than 0.1 ?m is 5 to 15% or 40 to 65%, the number-based percentage of particles whose size is 0.3 to 1.5 ?m is 15 to 30%, the specific surface area measured by the BET method is 5.8 to 10.1 m2/g, and the average particle size D50 according to the particle size distribution measured by laser diffraction measurement is preferably 0.6 to 1.5 ?m.

Abstract: An SOI substrate including a semiconductor layer whose thickness is even is provided. According to a method for manufacturing the SOI substrate, the semiconductor layer is formed over a base substrate. In the method, a first surface of a semiconductor substrate is polished to be planarized; a second surface of the semiconductor substrate which is opposite to the first surface is irradiated with ions, so that an embrittled region is formed in the semiconductor substrate; the second surface is attached to the base substrate, so that the semiconductor substrate is attached to the base substrate; and separation in the embrittled region is performed. The value of 3? (? denotes a standard deviation of thickness of the semiconductor layer) is less than or equal to 1.5 nm.

Abstract: A metal polish composition contains an amine represented by general formula (1): wherein m represents an integer of from 1 to 3 and n represents an integer of from 0 to 2, with m and n being such that (3-n-m) is an integer of from 0 to 2; A represents a straight-chained or branched alkylene, phenylene or substituted phenylene group having 1 to 5 carbon atoms; R1 and R3 each independently represent hydrogen or a substituted or non-substituted hydrocarbon group having 1 to 5 carbon atoms; R3 represents a substituted or non-substituted hydrocarbon group having 1 to 20 carbon atoms; a combination of R1 and R2, a combination of R2 and R3 and a combination of A and R3 can form a ring structure; and R1, R2, R3 and A can individually form a ring structure.