Abstract: A method for manufacturing a solar cell comprises forming a first conductivity-type silicon-based thin-film on a first surface of a substrate; forming a second conductivity-type silicon-based thin-film different from the first conductivity-type silicon-based thin-film, on a second surface of the substrate that is opposite to the first surface of the substrate; forming a first transparent electrode layer on the first conductivity-type silicon-based thin-film; and forming a second transparent electrode layer on the second conductivity-type silicon-based thin-film; forming a first metal seed layer on a first transparent electrode layer; forming a second metal seed layer on a second transparent electrode layer; forming a third metal seed layer on a peripheral edge and on an end-edge of the second conductivity-type silicon-based thin-film; forming a first plating layer on the first metal seed layer and a third plating layer on the third metal seed layer simultaneously by an electroplating method.

Abstract: A method for manufacturing a crystalline silicon-based solar cell includes forming a first intrinsic silicon-based thin-film on a first principal surface and a lateral surface of an n-type crystalline silicon substrate, forming a p-type silicon-based thin-film on the first intrinsic silicon-based thin-film, forming a first transparent electrode layer on an entire region of the first principal surface except for a peripheral portion, forming a second intrinsic silicon-based thin-film on a second principal surface and the lateral surface of the n-type crystalline silicon substrate, forming an n-type silicon-based thin-film on the second intrinsic silicon-based thin-film, forming a second transparent electrode layer on an entire region of the second principal surface and the lateral surface of the n-type crystalline silicon substrate, forming a patterned collecting electrode on the first transparent electrode layer, and forming a plated metal electrode on the second transparent electrode layer by an electroplati

Abstract: The solar cell includes: a first metal seed layer and a first plating layer provided on a first surface of a photoelectric conversion section; a second metal seed layer provided on a second surface of the photoelectric conversion section; and a third metal seed layer and a third plating layer provided on the lateral surface and the peripheral edge of the second surface of the photoelectric conversion section. The first metal seed layer is in electrical continuity with the third metal seed layer, while the second metal seed layer is in electrical non-continuity with the third metal seed layer. By supplying electricity to at least one of the first metal seed layer and the third metal seed layer, the first plating layer and the third plating layer are formed simultaneously.

Abstract: A solar cell includes: a cell main body part including a back electrode and a photoelectric conversion section, the back electrode being arranged on a back surface of the photoelectric conversion section; and a metal film disposed in contact with the back electrode of the cell main body part. The back electrode includes a plurality of projections or recesses with an arithmetic mean roughness of more than 0.1 ?m. The metal film has an arithmetic mean roughness of more than 0.1 ?m on a surface contacting the back electrode. The metal film covers at least 10% of a back surface of the cell main body part.

Abstract: The solar cell includes: a first metal seed layer and a first plating layer provided on a first surface of a photoelectric conversion section; a second metal seed layer provided on a second surface of the photoelectric conversion section; and a third metal seed layer and a third plating layer provided on the lateral surface and the peripheral edge of the second surface of the photoelectric conversion section. The first metal seed layer is in electrical continuity with the third metal seed layer, while the second metal seed layer is in electrical non-continuity with the third metal seed layer. By supplying electricity to at least one of the first metal seed layer and the third metal seed layer, the first plating layer and the third plating layer are formed simultaneously.

Abstract: The solar cell includes a collecting electrode on a first principal surface of a photoelectric conversion section. The collecting electrode comprises a first electroconductive layer and a second electroconductive layer in this order from the photoelectric conversion section side. An insulating layer is provided on the first principal surface of the photoelectric conversion section so as to cover substantially the entire surface of the region where the first electroconductive layer is not provided and a part of the first electroconductive layer. The insulating layer on the first electroconductive layer has an opening, and the second electroconductive layer is a plating layer that is in conduction with the first electroconductive layer through the opening section of the insulating layer. The first electroconductive layer contains a metal particle component and an insulating material. The metal particle component of the first electroconductive layer includes primary particles and secondary particles.

Abstract: A manufacturing method includes steps of forming a texture on a surface of a single-crystalline silicon substrate, cleaning the surface of the single-crystalline silicon substrate using ozone, depositing an intrinsic silicon-based layer on the texture on the single-crystalline silicon substrate, and depositing a conductive silicon-based layer on the intrinsic silicon-based layer, in this order. The single-crystalline silicon substrate before deposition of the intrinsic silicon-based layer has a texture size of less than 5 ?m. A recess portion of the texture has a curvature radius of less than 5 nm. After deposition of at least a part of the intrinsic silicon-based layer and before deposition of the conductive silicon-based layer, the intrinsic silicon-based layer is subjected to a plasma treatment in an atmosphere of a gas mainly composed of hydrogen.

Abstract: The solar cell includes a plurality of light-receiving-side finger electrodes on a light-receiving surface of a photoelectric conversion section having a semiconductor junction. The light-receiving surface of the photoelectric conversion section is covered with a first insulating layer. Each light-receiving-side finger electrodes include: a first metal seed layer provided between the photoelectric conversion section and the first insulating layer; and a first plating metal layer being conduction with the first metal seed layer through openings formed in the first insulating layer. The solar cell includes an isolated plating metal layer pieces contacting neither the light-receiving-side finger electrodes nor the back-side finger electrodes. On the surface of the first insulating layer, an isolated plating metal crowded region is present in a form of a band-shape extending parallel to an extending direction of the light-receiving-side finger electrodes.

Abstract: Disclosed is a solar cell having a collecting electrode on one main surface of a photoelectric conversion section. The collecting electrode includes a first electroconductive layer and a second electroconductive layer in this order from the photoelectric conversion section side, and further includes an insulating layer between the first electroconductive layer and the second electroconductive layer. The first electroconductive layer includes a low-melting-point material, and a part of the second electroconductive layer is conductively connected with the first electroconductive layer through, for example, an opening in the insulating layer. The second electrode layer is preferably formed by a plating method. In addition, it is preferable that before forming the second electroconductive layer, annealing by heating is carried out to generate the opening section in the insulating layer.

Abstract: A solar cell of the present invention includes a collecting electrode extending in one direction on a first principal surface of a photoelectric conversion section. The collecting electrode includes first and second electroconductive layers in this order from the photoelectric conversion section side, and further includes an insulating layer provided with openings between the electroconductive layers. The first electroconductive layer is covered with the insulating layer, and the second electroconductive layer is partially in conduction with the first electroconductive layer through the openings of the insulating layer. The first electroconductive layer has non-central portions within a range from both ends of the first electroconductive layer, and a central portion between the two non-central portions, in a direction orthogonal to an extending direction of the first electroconductive layer. A density of openings at the central portion is higher than a density of openings at the non-central portion.

Abstract: An electrode layer formation step of forming an electrode layer including the first electrode and a removal-target body on a first main surface side of a photoelectric conversion part; an insulating layer formation step of forming an insulating layer so as to cover at least the removal-target body; an opening formation step of forming an opening in the insulating layer by utilizing the removal-target body; and a metal layer formation step of forming a metal layer on the electrode layer through the opening of the insulating layer by a plating method are performed in this order. In the opening formation step, at least a part of the removal-target body is removed by irradiation by a laser beam, so that the opening of the insulating layer is formed.

Abstract: A solar cell includes a photoelectric conversion section having first and second principal surfaces, and a collecting electrode formed on the first principal surface. The collecting electrode includes first and second electroconductive layers in this order from the photoelectric conversion section side, and includes an insulating layer between the first and second electroconductive layers. The insulating layer is provided with an opening, and the first and second electroconductive layers are in conduction with each other via the opening provided in the insulating layer. The solar cell has, on the first principal surface, the second principal surface or a side surface of the photoelectric conversion section, an insulating region freed of a short circuit of front and back sides of the photoelectric conversion section, and the surface of the insulating region is at least partially covered with the insulating layer.

Abstract: A solar cell includes a photoelectric conversion section that, includes an n-type crystal silicon substrate, a p-type silicon-based thin-film provided on a first principal surface, and an n-type silicon-based thin-film provided on a second principal surface, and further includes a first electrode layer on the p-type silicon-based thin-film, and a second electrode layer on the n-type silicon-based thin film. A patterned collector electrode is provided on the first electrode layer. On the first principal surface of the photoelectric conversion section, a wraparound portion of the second electrode layer, an insulating region where neither the first electrode layer nor the second electrode layer is provided, and a first electrode layer-formed region are arranged in this order from a peripheral end.

Abstract: A solar cell is provided with an electrode layer on a photovoltaic conversion section including a crystalline silicon substrate. Deposition of the electrode layer is performed by a deposit-up method with a substrate being mounted in such a manner that an opening edge portion of a mask plate having an opening is in contact with the substrate. The opening edge portion of the mask plate has a tapered surface at a part that is in contact with first principal surface of the substrate, the tapered surface conforming to a deflection angle at a peripheral end of the substrate. A solar cell having a large effective area can be prepared by suppressing deposition of electrode layer on mask-covered region due to penetration.

Abstract: A manufacturing method includes steps of forming a texture on a surface of a single-crystalline silicon substrate, cleaning the surface of the single-crystalline silicon substrate using ozone, depositing an intrinsic silicon-based layer on the texture on the single-crystalline silicon substrate, and depositing a conductive silicon-based layer on the intrinsic silicon-based layer, in this order. The single-crystalline silicon substrate before deposition of the intrinsic silicon-based layer has a texture size of less than 5 ?m. A recess portion of the texture has a curvature radius of less than 5 nm. After deposition of at least a part of the intrinsic silicon-based layer and before deposition of the conductive silicon-based layer, the intrinsic silicon-based layer is subjected to a plasma treatment in an atmosphere of a gas mainly composed of hydrogen.

Abstract: A solar cell of the present invention includes a collecting electrode on one main surface of a photoelectric conversion section. The collecting electrode includes first and second electroconductive layers in this order from the photoelectric conversion section side, and an insulating layer between the first and second electroconductive layers, the insulating layer having an opening section formed therein. The first electroconductive layer is covered with the insulating layer, contains a low-melting-point material, and is conductively connected with a part of the second electroconductive layer via the opening section. The surface roughness of the second electroconductive layer is preferably 1.0 ?m to 10.0 ?m. The second electroconductive layer is preferably formed by a plating method. In order to conductively connect the first and second electroconductive layers, annealing of the first electroconductive layer by heating is preferably performed prior to forming the second electroconductive layer.

Abstract: This solar cell module includes a solar cell and a wiring member. The solar cell includes a collecting electrode on a light-receiving side of a photoelectric conversion section, and a back electrode on a back side of the photoelectric conversion section. Sequentially from the photoelectric conversion section side, the collecting electrode includes a first collecting electrode and a second collecting electrode, and the back electrode comprises a first back electrode and a second back electrode. It is preferable that the surface roughness Ra1 of the first collecting electrode and the surface roughness Ra2 of the second collecting electrode satisfy Ra1?Ra2 and Ra2=1.0 to 10.0 ?m. It is also preferable that the outermost layer of the second collecting electrode and the outermost layer of the second back electrode are mainly composed of the same electroconductive material.

Abstract: A method for manufacturing a crystalline silicon-based solar cell having a photoelectric conversion section includes a silicon-based layer of an opposite conductivity-type on a first principal surface side of a crystalline silicon substrate of a first conductivity-type, and a collecting electrode formed by an electroplating method on a first principal surface of the photoelectric conversion section. By applying laser light from a first or second principal surface side of the photoelectric conversion section, an insulation-processed region his formed where a short-circuit between the first principal surface and a second principal surface of the photoelectric conversion section is eliminated. On the collecting electrode and/or the insulation-processed region, a protecting layer s formed for preventing diffusion of a metal contained in the collecting electrode into the substrate.

Abstract: The crystalline silicon-based solar cell according to the present invention includes a first intrinsic silicon-based thin-film, a p-type silicon-based thin-film, a first transparent electrode layer, and a patterned collecting electrode on a first principal surface of an n-type crystalline silicon substrate; and a second intrinsic silicon-based thin-film, an n-type silicon-based thin-film, a second transparent electrode layer, and a plated metal electrode on a second principal surface of the n-type crystalline-silicon substrate. On a peripheral edge of the first principal surface, an insulating region freed of a short-circuit between the first transparent electrode layer and the second transparent electrode layer is provided. The plated metal electrode is formed on an entire region of the second transparent electrode layer.

Abstract: A solar cell of the invention includes a collecting electrode on a first principal surface of a photoelectric conversion section. The collecting electrode includes a first electroconductive layer and a second electroconductive layer in this order from the photoelectric conversion section. On the first principal surface of the photoelectric conversion section, an insulating layer is provided in a first electroconductive layer-non-formed region where the first electroconductive layer is not formed. The insulating layer includes a first insulating layer is in contact with the first electroconductive layer on the first principal surface of the photoelectric conversion section, and a second insulating layer that is formed so as to cover at least a part of the first insulating layer.