Abstract: An image forming apparatus includes an image forming device, a detector and a holding body. The image forming device is configured to perform an image formation to a sheet. The detector is configured to detect a position of a first image formed on a first surface of the sheet through the image formation of the image forming device. The holding body is configured to move while holding the sheet, by performing one of a rotation in a radial direction about a support shaft attached thereto in a direction perpendicular to an axial direction thereof and a lateral shift in a width direction of the sheet, operable to correct the position of the sheet based on a detection result obtained by the detector.

Abstract: A liquid discharge apparatus includes a liquid discharge unit. The liquid discharge unit includes a liquid chamber member defining a liquid holding portion to hold a liquid, a film having a nozzle hole from which the liquid is discharged and a surface facing the liquid holding portion, and a holder supporting the film. The surface of the film has a contact angle with water of less than 90 degrees.

Abstract: A MOSFET includes: a semiconductor base substrate having an n-type column region and a p-type column region, the n-type column region and the p-type column region forming a super junction structure; and a gate electrode formed by way of a gate insulation film. Assuming a region of the semiconductor base substrate which provides a main operation of the MOSFET as an active region, a region of the semiconductor base substrate maintaining a withstand voltage of the MOSFET as an outer peripheral region, and a region of the semiconductor base substrate disposed between the active region and the outer peripheral region as an active connecting region, out of the active region, the active connecting region, and the outer peripheral region of the semiconductor base substrate, the crystal defects are formed only in the active region and the active connecting region.

Abstract: A MOSFET includes: a semiconductor base substrate having an n-type column region and a p-type column region, the n-type column region and the p-type column region forming a super junction structure; and a gate electrode formed by way of a gate insulation film. Assuming a region of the semiconductor base substrate which provides a main operation of the MOSFET as an active region, a region of the semiconductor base substrate maintaining a withstand voltage of the MOSFET as an outer peripheral region, and a region of the semiconductor base substrate disposed between the active region and the outer peripheral region as an active connecting region, out of the active region, the active connecting region, and the outer peripheral region of the semiconductor base substrate, the crystal defects are formed only in the active region and the active connecting region.

Abstract: A conveying device includes a first pair of nipping rollers, a second pair of nipping rollers, a position corrector configured to correct a position of a recording medium in a width direction of the recording medium, an end position detector configured to detect an end position of the recording medium in the width direction, and circuitry configured to, in adjustment of the end position detector, stop conveying the recording medium in response to arrival of a leading end of the recording medium at the end position detector, cause the position corrector to move the recording medium toward an outside of the conveyance passage in the width direction to a position at which the end position detector is covered by the recording medium, adjust the output of the end position detector, and cause the end position detector to detect the recording medium.

Abstract: An image forming apparatus includes a fixing device and circuitry. The fixing device includes a fixing rotator, an electromagnetic induction heater configured to heat the fixing rotator, and a magnetic flux control member. The circuitry is configured to control the electromagnetic induction heater to lead a temperature of the fixing rotator to a target temperature and change an upper limit of power supplied to the electromagnetic induction heater based on the target temperature.

Abstract: A constituent member of a golf ball comprising a vulcanized form of a rubber composition includes (a) a base rubber, (b) a co-crosslinking agent which is an ?,?-unsaturated carboxylic acid and/or a metal salt thereof, (c) an organic peroxide, (d) water, (e) an antioxidant which is a benzoimidazole of the following general formula and/or a metal salt thereof, and (g-1) an organosulfur being alkylphenoldisulfide polymers represented by the specific chemical formula or (h) sulfur. When the rubber composition is used in constituent members of a golf ball, especially the core, the golf ball exhibits low spin properties on shots, resulting in an improved flight performance and enabling a good durability to be maintained.

Abstract: A sheet conveying device, which is included in an image forming apparatus, includes a pair of rotary bodies configured to convey a sheet and correct a positional deviation of the sheet, a pair of downstream side sheet conveying bodies disposed downstream from the pair of rotary bodies in a sheet conveying direction and configured to convey the sheet, and a detector configured to detect separation of the pair of rotary bodies. The pair of rotary bodies moves the sheet by moving from a home position on a sheet conveyance passage through which the sheet passes. The pair of rotary bodies moves to the home position while the pair of downstream side sheet conveying bodies is conveying the sheet, in response to detection of the separation of the pair of rotary bodies by the detector.

Abstract: A rubber composition for golf balls includes (a) a base rubber, (b) a co-crosslinking agent which is an ?,?-unsaturated carboxylic acid and/or a metal salt thereof, (c) an organic peroxide, (d) water or an alcohol, and (e) an antioxidant which is a benzoimidazole of the following general formula and/or a metal salt thereof. When the rubber composition is used in constituent members of a golf ball, especially the core, the golf ball exhibits low spin properties on shots, resulting in an improved flight performance and enabling a good durability to be maintained.

Abstract: A golf ball includes a core and a cover. The core is formed of a material molded under heat from a rubber composition. The rubber composition includes components (A) through (C). The components (A) through (C) are (A) a base rubber, (B) an organic peroxide, and (C) a metal salt containing hydration water.

Abstract: A fixing device includes a fixing belt stretched taut around a plurality of supports, a pressure rotator to form a fixing nip between the fixing belt and the pressure rotator, a belt polishing mechanism to polish the fixing belt. The belt polishing mechanism includes a polishing roller to separably contact the fixing belt and slide over the surface of the fixing belt when the polishing roller is pressed against the fixing belt, a contact and separation driver to press and separate the polishing roller to and from the fixing belt, an opposed member disposed opposite the polishing roller via the fixing belt and configured to form a polishing nip with the fixing belt, and a polishing roller rotation mechanism to rotate the polishing roller. The polishing roller rotation mechanism includes a first rotator disposed coaxially with the polishing roller and a second rotator disposed coaxially with the opposed member.

Abstract: A power conversion circuit includes: a MOSFET having a super junction structure; an inductive load; and a freewheel diode. A switching frequency of the MOSFET is 10 kHz or more. When the MOSFET is turned off, a first period during which a drain current decreases, a second period during which the drain current increases, and a third period during which the drain current decreases again appear in this order. The freewheel diode is an Si-FRD or an SiC-SBD, and current density obtained by dividing a current value of the forward current by an area of an active region of the freewheel diode falls within a range of 200 A/cm2 to 400 A/cm2 when the freewheel diode is the Si-FRD, and the current density falls within a range of 400 A/cm2 to 1500 A/cm2 when the freewheel diode is the SiC-SBD.

Abstract: Using the cobblestone area (CA) formation inhibitory activity of human leukemic stem cell-like cells as an indicator, a fraction having the activity has been extracted from the fat-soluble fraction of Porifera, then, a compound having the activity has been isolated and purified from the aforementioned fraction, and then, the structure thereof has been determined, so that a Stelliferin compound comprising a novel compound has been identified. Moreover, it has been found that the isolated and purified Stelliferin compound significantly suppresses the niche formation of leukemic stem cell-like cells derived from human chronic myelogenous leukemia (CML) having resistance to existing antitumor agents and enhances the effects of antitumor agents on the cells.

Abstract: A golf ball includes a core and a cover. The core is formed of a material molded under heat from a rubber composition. The rubber composition includes components (A) through (C). The components (A) through (C) are (A) a base rubber, (B) an organic peroxide, and (C) a water providing agent. The water providing agent releases water at a vulcanization temperature at which the rubber composition is vulcanized. The dissociation rate of water of the water providing agent in the case of heating the water providing agent up to the vulcanization temperature of the rubber composition is 60% by mass or more.

Abstract: A MOSFET according to the present invention includes a semiconductor base substrate having a super junction structure. A gate electrode is on a first main surface side of the semiconductor base substrate by way of a gate insulation film, wherein in a state where a total amount of dopant in an n-type column region differs from a total amount of dopant in a p-type column region, assuming a depth position where an average positive charge density ?(x) becomes 0 as Xm?, assuming a deepest depth position of the surface of the depletion layer on the first main surface side as X0?, assuming a depth position where the reference average positive charge density ?0(x) becomes 0 as Xm, and assuming a deepest depth position of the depletion layer on the first main surface side as X0, a relationship of |X0?X0?|<|Xm?Xm?| is satisfied.

Abstract: A MOSFET according to the present invention includes a semiconductor base substrate having a super junction structure. A gate electrode is on a first main surface side of the semiconductor base substrate byway of a gate insulation film, wherein in a state where a total amount of dopant in an n-type column region differs from a total amount of dopant in a p-type column region, assuming a depth position where an average positive charge density ?(x) becomes 0 as Xm?, assuming a deepest depth position of the surface of the depletion layer on the first main surface side as X0?, assuming a depth position where the reference average positive charge density ?0(x) becomes 0 as Xm, and assuming a deepest depth position of the depletion layer on the first main surface side as X0, a relationship of |X0?X0?|<|Xm?Xm?| is satisfied.

Abstract: A MOSFET includes: a semiconductor base substrate having n-type column regions and p-type column regions, the n-type column regions and the p-type column regions forming a super junction structure; and a gate electrode which is formed on a first main surface side of the semiconductor base substrate by way of a gate insulation film, wherein crystal defects whose density is increased locally as viewed along a depth direction are formed in the n-type column regions and the p-type column regions, using the first main surface as a reference and assuming a depth to a deepest portion of the super junction structure as Dp, a depth at which density of the crystal defects exhibits a maximum value as Dd, and a half value width of density distribution of the crystal defects as W, a relationship of 0.25Dp?Dd<0.95Dp and a relationship of 0.05Dp<W<0.5Dp are satisfied.

Abstract: A MOSFET used in a power conversion circuit including a reactor, a power source, the MOSFET, and a rectifier element, includes a semiconductor base substrate having an n-type column region and a p-type column region, the n-type column region and the p-type column region forming a super junction structure, the n-type column region and the p-type column region are formed such that a total amount of a dopant in the p-type column region is set higher than a total amount of a dopant in the n-type column region, and the MOSFET is configured to be operated in response to turning on of the MOSFET such that at a center of the n-type column region as viewed in a plan view, a low electric field region having lower field intensity than areas of the n-type column region other than the center of the n-type column region appears.

Abstract: A fixing device includes a fixing belt stretched taut around a plurality of supports, a pressure rotator to form a fixing nip between the fixing belt and the pressure rotator, a belt polishing mechanism to polish the fixing belt. The belt polishing mechanism includes a polishing roller to separably contact the fixing belt and slide over the surface of the fixing belt when the polishing roller is pressed against the fixing belt, a contact and separation driver to press and separate the polishing roller to and from the fixing belt, an opposed member disposed opposite the polishing roller via the fixing belt and configured to form a polishing nip with the fixing belt, and a polishing roller rotation mechanism to rotate the polishing roller. The polishing roller rotation mechanism includes a first rotator disposed coaxially with the polishing roller and a second rotator disposed coaxially with the opposed member.

Abstract: A MOSFET includes: a semiconductor base substrate having an n-type column region and a p-type column region, the n-type column region and the p-type column region forming a super junction structure; and a gate electrode formed by way of a gate insulation film. Assuming a region of the semiconductor base substrate which provides a main operation of the MOSFET as an active region, a region of the semiconductor base substrate maintaining a withstand voltage of the MOSFET as an outer peripheral region, and a region of the semiconductor base substrate disposed between the active region and the outer peripheral region as an active connecting region, out of the active region, the active connecting region, and the outer peripheral region of the semiconductor base substrate, the crystal defects are formed only in the active region and the active connecting region.