Abstract: A semiconductor device including a first electrode, a second electrode, an oxide semiconductor disposed between the first electrode and the second electrode, and a first oxide layer containing a predetermined element, oxygen, and an additional element and disposed between the first electrode and the oxide semiconductor, wherein the predetermined element is at least one of tantalum, boron, hafnium, silicon, zirconium, or niobium, and the additional element is at least one of phosphorus, sulfur, copper, zinc, gallium, germanium, arsenic, selenium, silver, indium, tin, antimony, tellurium, or bismuth.

Abstract: A vehicle door unlocking system of the present disclosure includes an in-vehicle device installed in a vehicle and an external device installed outside the vehicle. The in-vehicle device acquires unlocking information externally given to the vehicle to unlock the door without a key operation and outputs an unlocking command for making a door locking device unlock the door. The external device acquires the unlocking information defined by a user of the vehicle from the in-vehicle device or a portable terminal of the user and stores the unlocking information as an emergency unlocking information. The external device sends a door unlocking permission signal of the door to the in-vehicle device to make the in-vehicle device output the unlocking command when the unlocking information given to the vehicle and sent from the in-vehicle device coincides with the emergency unlocking information.

Abstract: Provided are an insulated wire material including: a conductor including a single core conductor or a plurality of divided conductors placed in parallel to each other or helically placed; a peripheral insulating layer with which a periphery of the conductor is coated; and a welding member provided at least one end portion of the conductor and joined, via a welded portion welded to the single core conductor or divided conductors, to at least a peripheral surface of the welded portion, a manufacturing method thereof, a coil including the insulated wire material, and electrical/electronic equipment including the coil.

Abstract: An insulated wire comprising a conductor and a bubble-containing insulating layer, directly or indirectly coating the outer periphery of the conductor and containing a thermosetting resin, wherein the bubbles in the bubble-containing insulating layer include flattened bubbles whose oblateness in the cross-section perpendicular to the longitudinal direction of the insulated wire (lateral length of the bubble cross-sectional shape/vertical length of the bubble cross-sectional shape) is 1.5 or more and 5.0 or less.

Abstract: Provided is an electrical conducting wire in which eddy current loss is effectively suppressed, mechanical strength is excellent, and electrical conductivity is also excellent while aluminum strands that are not coated with insulating resin are used as strands constituting a split conductor. An electrical conducting wire, including: a split conductor composed of multiple aluminum strands arranged in parallel to each other or multiple aluminum strands twisted into a helix, wherein each of the strands contains 0.01 to 0.4 mass % of Fe, 0.3 to 0.5 mass % of Cu, 0.04 to 0.3 mass % of Mg, 0.02 to 0.3 mass % of Si, and 0.001 to 0.01 mass % of Ti and V in total, with the balance being Al and inevitable impurities; and wherein each of the strands is not coated with an insulating resin.

Abstract: An insulated wire containing a thermoplastic resin layer (A) as a covering layer directly or indirectly on a rectangular conductor, in which the insulated wire has at least one protruding part which is continuous in a longitudinal direction of said insulated wire, on a surface of a portion of the thermoplastic resin layer (A), which portion corresponds to at least one side of a cross-section of the insulated wire, said protruding part and a flat part of the surface having the protruding part forms a curved portion with a radius of curvature of 0.01 to 0.75 mm in the cross-section of the insulated wire, and a lateral face of the protruding part has a slope of less than 90° to the flat part of the surface having the protruding part in the cross-section of the insulated wire, a coil produced by processing the insulated wire by winding, and an electric/electronic equipment comprising the coil.

Abstract: An insulated wire including: a conductor; and an insulating film provided on an outer periphery of the conductor, wherein the insulating film satisfies the following relation between a relative permittivity (?) of the insulating film at 0.2 atm and a relative permittivity (?0) of an outermost layer of the insulating film at 0.2 atm. ??3.0 and ?0/??1.2.

Abstract: An assembled wire has a substantially rectangular cross section, and is formed by assembling a plurality of strands. Each strand has a conductor portion and a strand insulating layer covering the conductor portion. At least a part of the assembled plurality of strands in the longitudinal direction is covered with an outer insulating layer. The strand is formed as follows. First, the strand insulating layer is coated on the outer periphery of the conductor portion. A large number of voids are formed in a resin constituting the strand insulating layer. From this state, the strand is formed, for example, by collapsing the strand insulating layer by heating and pressurizing. At this time, it is possible to uniformly collapse the strand insulating layer by crushing the internal voids. Therefore, the voids in the strand are crushed and flattened in the thickness direction of the strand insulating layer over the entire periphery.

Abstract: A crystal growth apparatus, comprising a crucible, a heat-insulating material which covers a circumference of the crucible, and a heating member which is located on the outside of the heat-insulating material and is configured to perform induction heating of the crucible, wherein the heat-insulating material has a movable part, wherein the movable part forms an opening in the heat-insulating material by the movement of the movable part to control an opening ratio of the opening in the heat-insulating material.

Abstract: Provided is an assembled wire 10 having a substantially rectangular cross section, and is formed by assembling a plurality of strands 7. Each strand 7 has a conductor portion 11 and a strand insulating layer 13 covering the conductor portion 11. The strand insulating layer 13 preferably contains at least one kind of resin in which 50% weight loss in Tg-DTA occurs at from 300° C. to 500° C. The strand insulating layer 13 contains particles. The particles are particles having volume resistivity of 1×106 ?·cm or more, and, for example, inorganic substances such as silica, titania, alumina, aluminum nitride, magnesium oxide, silicon nitride, and silicon carbide; and resins such as silicone are applicable.

Abstract: An insulated wire comprising a conductor and a bubble-containing insulating layer, directly or indirectly coating the outer periphery of the conductor and containing a thermosetting resin, wherein the bubbles in the bubble-containing insulating layer include flattened bubbles whose oblateness in the cross-section perpendicular to the longitudinal direction of the insulated wire (lateral length of the bubble cross-sectional shape/vertical length of the bubble cross-sectional shape) is 1.5 or more and 5.0 or less.

Abstract: An insulated wire containing a thermoplastic resin layer (A) as a covering layer directly or indirectly on a rectangular conductor, in which the insulated wire has at least one protruding part which is continuous in a longitudinal direction of said insulated wire, on a surface of a portion of the thermoplastic resin layer (A), which portion corresponds to at least one side of a cross-section of the insulated wire, said protruding part and a flat part of the surface having the protruding part forms a curved portion with a radius of curvature of 0.01 to 0.75 mm in the cross-section of the insulated wire, and a lateral face of the protruding part has a slope of less than 90° to the flat part of the surface having the protruding part in the cross-section of the insulated wire, a coil produced by processing the insulated wire by winding, and an electric/electronic equipment comprising the coil.

Abstract: A SiC epitaxial wafer having a SiC epitaxial layer formed on a SiC single crystal substrate having an offset angle of 4 degrees or less in a<11-20>direction from a (0001) plane. A trapezoidal defect included in the SiC epitaxial wafer includes an inverted trapezoidal defect in which a length of a lower base on a downstream side of a step flow is equal to or less than a length of an upper base on an upstream side of the step flow. Also disclosed is a method for manufacturing the SiC epitaxial wafer.

Abstract: Provided is an assembled wire 10 having a substantially rectangular cross section, and is formed by assembling a plurality of strands 7. Each strand 7 has a conductor portion 11 and a strand insulating layer 13 covering the conductor portion 11. The strand insulating layer 13 preferably contains at least one kind of resin in which 50% weight loss in Tg-DTA occurs at from 300° C. to 500° C. The strand insulating layer 13 contains particles. The particles are particles having volume resistivity of 1×106 ?·cm or more, and, for example, inorganic substances such as silica, titania, alumina, aluminum nitride, magnesium oxide, silicon nitride, and silicon carbide; and resins such as silicone are applicable.

Abstract: This method of producing a SiC epitaxial wafer having an epitaxial layer on a SiC single crystal substrate, and includes: when performing crystal growth of the epitaxial layer, a step of forming a part of an epitaxial layer under first conditions at an initial stage where the crystal growth is started; and a step of forming a part of a SiC epitaxial layer under second conditions in which a Cl/Si ratio is decreased and a C/Si ratio is increased in comparison to those in the first conditions, wherein the C/Si ratio is equal to or less than 0.6 and the Cl/Si ratio is equal to or more than 5.0 in the first conditions.

Abstract: Provided are an insulated wire material including: a conductor including a single core conductor or a plurality of divided conductors placed in parallel to each other or helically placed; a peripheral insulating layer with which a periphery of the conductor is coated; and a welding member provided at at least one end portion of the conductor and joined, via a welded portion welded to the single core conductor or divided conductors, to at least a peripheral surface of the welded portion, a manufacturing method thereof, a coil including the insulated wire material, and electrical/electronic equipment including the coil.

Abstract: An assembled wire has a substantially rectangular cross section, and is formed by assembling a plurality of strands. Each strand has a conductor portion and a strand insulating layer covering the conductor portion. At least a part of the assembled plurality of strands in the longitudinal direction is covered with an outer insulating layer. The strand is formed as follows. First, the strand insulating layer is coated on the outer periphery of the conductor portion. At this time, a large number of voids are formed in a resin constituting the strand insulating layer. From this state, the strand is formed, for example, by collapsing the strand insulating layer by heating and pressurizing. At this time, it is possible to uniformly collapse the strand insulating layer by crushing the internal voids. Therefore, the voids in the strand are crushed and flattened in the thickness direction of the strand insulating layer over the entire periphery.

Abstract: An insulated wire, containing: a conductor having a rectangular cross-section; and an insulating coated film having at least two insulating layers laminated together on the conductor, wherein the laminated insulating coated film is composed of: an enamel insulating layer formed from a thermosetting resin on the outer periphery of the conductor, and an extruded insulating layer formed from a thermoplastic resin on the outer side of the enamel insulating layer, wherein the thickness of the enamel insulating layer is 50 ?m or more, and wherein the total thickness (T) and the relative permittivity (?) at 100° C. of the laminated insulating coated film; and the maximum thickness (Tmax), and the maximum value (?max) and the minimum value (?min) of the relative permittivity at 100° C. of one layer among the laminated insulating layers; satisfy all of the following relations: T?100 ?m??(1.1) Tmax?100 ?m??(1.2) 1.5???3.5??(2.1) 1.0??max/?min?1.2??(2.2) a coil; and an electrical or electronic equipment.

Abstract: A crystal growth apparatus, comprising a crucible, a heat-insulating material which covers a circumference of the crucible, and a heating member which is located on the outside of the heat-insulating material and is configured to perform induction heating of the crucible, wherein the heat-insulating material has a movable part, wherein the movable part forms an opening in the heat-insulating material by the movement of the movable part to control an opening ratio of the opening in the heat-insulating material.

Abstract: Provided is a manufacturing device capable of effectively and sufficiently reducing an edge crown. The wafer support is used in a chemical vapor phase growth device in which an epitaxial film is grown on a main surface of a wafer using a chemical vapor deposition method, the wafer support including: a wafer mounting surface having an upper surface on which a substrate is mounted; and a wafer support portion that rises to surround a wafer to be mounted, in which a height from an apex of the wafer support portion to a main surface of the wafer mounted on the wafer mounting surface is 1 mm or more.