Abstract: A charged particle radiation device includes a sample chamber in which a sample stage adapted to mount a sample is installed, a charged particle radiation irradiation section adapted to irradiate the sample with a charged particle radiation to observe and fabricate the sample, sidewalls installed on a periphery of the sample chamber and the charged particle radiation irradiation section, a ceiling board installed on a plane located in an upper part of the sidewalls, and a sound absorbing structure section disposed below the ceiling board, and including a plurality of hole sections and a hollow section communicated with the hole sections. The sound absorbing structure section has an absorption band including a frequency band of a standing wave generated in a space surrounded by the sidewalls and the ceiling board. Further, a soundproof cover may include the sidewalls, ceiling board and sound absorbing structure.

Abstract: Charged particle beam apparatus arrangements in which either a first noise absorber which provides noise absorbing performance specialized for a first frequency range including the natural frequency of the charged particle beam apparatus as reference, or a second noise absorber which provides noise absorbing performance specialized for a second frequency range including the frequency of acoustic standing waves generated within the cover as reference, or both of the first and second noise absorbers is/are disposed within a cover of the charged particle beam apparatus.

Abstract: An epitaxial wafer manufacturing device, including a shield (12), which in addition to being removably attached inside a chamber, is arranged in close proximity to the lower surface of a top plate (3). The shield has a substrate (12a) having an opening (13) in the central portion thereof that forces a gas inlet (9) to face the inside of a reaction space (K), and a thin film (12b) that covers the lower surface of the substrate. The surface of the thin film has the shape of surface irregularities corresponding to fine surface irregularities formed in the lower surface of the substrate. When the shield has undergone thermal deformation as a result of being heated by heating means (8), deposits deposited on the lower surface of the shield are inhibited from falling off by the shape of the surface irregularities.

Abstract: The present invention provides a multilayer insulated electric wire to achieve a good balance between heat resistance and voltage resistance characteristics, then satisfy IEC standards Pub. 61558 which require strict voltage regulation, and electric or electronic equipment such as transformer formed by winding the insulated electric wire. The present invention is a multilayer insulated electric wire including two or more insulating layers, wherein at least one layer of the insulating layers other than the outermost layer is an insulating layer containing a resin having a melting point of 200° C. or higher and a tensile modulus of elasticity at 25° C. of 1000 MPa or less, and the multilayer insulated electric wire is coated with a resin material (also simply called a resin) having a tensile modulus of elasticity at 25° C. of 1000 MPa or more as the outermost layer, and electric or electronic equipment such as transformer formed by winding the insulated electric wire.

Abstract: Provided is an epitaxial wafer manufacturing device (1) that deposits and grows epitaxial layers on the surfaces of wafers W while supplying a raw material gas to a chamber, wherein a shield (12), arranged in close proximity to the lower surface of a top plate (3) so as to prevent deposits from being deposited on the lower surface of the top plate (3), is removably attached inside the chamber, has an opening (13) in the central portion thereof that forces a gas inlet (9) to face the inside of a reaction space K, and has a structure in which it is concentrically divided into a plurality of ring plates (16), (17) and (18) around the opening (13).

Abstract: Provided are a SiC epitaxial wafer in which the surface density of stacking faults is reduced, and a manufacturing method thereof. The method for manufacturing such a SiC epitaxial wafer comprises a step of determining a ratio of basal plane dislocations (BPD), which causes stacking faults in a SiC epitaxial film of a prescribed thickness which is formed on a SiC single crystal substrate having an off angle, to basal plane dislocations which are present on a growth surface of the SiC single crystal substrate, a step of determining an upper limit of surface density of basal plane dislocations on the growth surface of a SiC single crystal substrate used based on the above ratio, and a step of preparing a SiC single crystal substrate which has surface density equal to or less than the above upper limit, and forming a SiC epitaxial film on the SiC single crystal substrate under the same conditions as the growth conditions of the epitaxial film used in the step of determining the ratio.

Abstract: A SiC epitaxial wafer manufacturing method of the present invention includes: manufacturing a SiC epitaxial wafer including a SiC epitaxial layer on a surface of a SiC single crystal wafer while supplying a raw material gas into a chamber using a SIC epitaxial wafer manufacturing apparatus; and manufacturing a subsequent SiC epitaxial wafer after measuring a surface density of triangular defects originating from a material piece of an internal member of the chamber on the SiC epitaxial layer of the previously manufactured SiC epitaxial wafer.

Abstract: An inverter surge-resistant insulated wire, having an enamel baked layer, an adhesive layer, and an extrusion-coated resin layer, around the outer periphery of a conductor, wherein the sum of the thickness of the enamel baked layer, the extrusion-coated resin layer, and the adhesive layer is 60 ?m or more, wherein the thickness of the enamel baked layer is 50 ?m or less, and wherein the extrusion-coated resin layer is formed from a polyphenylene sulfide resin composition, which contains a polyphenylene sulfide polymer having a melt viscosity at 300° C. of 100 Pa·s or more, 2 to 8 mass % of a thermoplastic elastomer, and an antioxidant, and which has a tensile modulus of elasticity at 25° C. of 2,500 MPa or more, and a tensile modulus of elasticity at 250° C. of 10 MPa or more.

Abstract: Currently, there is no noise-proof cover, particularly noise-proof cover used in a clean room, which absorbs noise by a structure specialized for an estimated frequency of noise produced by environmental noise. Therefore, efficient noise absorption is still difficult. Accordingly, the invention provides a charged particle beam apparatus in which either a first noise absorber which provides noise absorbing performance specialized for a first frequency range including the natural frequency of the charged particle beam apparatus as reference, or a second noise absorber which provides noise absorbing performance specialized for a second frequency range including the frequency of acoustic standing waves generated within the cover as reference, or both of the first and second noise absorbers is/are disposed within a cover of the charged particle beam apparatus.

Abstract: A charged particle radiation device includes a sample chamber in which a sample stage adapted to mount a sample is installed, a charged particle radiation irradiation section adapted to irradiate the sample with a charged particle radiation to observe and fabricate the sample, sidewalls installed on a periphery of the sample chamber and the charged particle radiation irradiation section, a ceiling board installed on a plane located in an upper part of the sidewalls, and a sound absorbing structure section disposed below the ceiling board, and including a plurality of hole sections and a hollow section communicated with the hole sections. The sound absorbing structure section has an absorption band including a frequency band of a standing wave generated in a space surrounded by the sidewalls and the ceiling board. Further, a soundproof cover may include the sidewalls, ceiling board and sound absorbing structure.

Abstract: A foamed electrical wire, containing: a conductor; and a foamed insulating layer; in which the foamed insulating layer comprises a thermoplastic resin that is a crystalline thermoplastic resin having a melting point of 150° C. or more or a non-crystalline thermoplastic resin having a glass transition temperature of 150° C. or more, and the average bubble diameter of the foamed insulating layer is 5 ?m or less.

Abstract: {Problems} To provide an insulated wire, which is high in a dielectric breakdown resistance even if insulating resin coatings are laminated, because the interlayer adhesiveness is excellent, and which is excellent in a partial discharge resistance, because the dielectric constant is low. {Means to solve} An insulated wire, having directly or indirectly on a conductor (1), at least two laminate units each formed by laminating an insulating layer (21,23) and an insulating layer (22, 24) higher in a dielectric constant than the insulating layer (21, 23), in this order from the conductor side.

Abstract: According to the present invention, there is provided an SiC epitaxial wafer which reduces triangular defects and stacking faults, which is highly uniform in carrier concentration and film thickness, and which is free of step bunching, and its method of manufacture. The SiC epitaxial wafer of the present invention is an SiC epitaxial wafer in which an SiC epitaxial layer is formed on a 4H—SiC single crystal substrate that is tilted at an off angle of 0.4°-5°, wherein the density of triangular-shaped defects of said SiC epitaxial layer is 1 defect/cm2 or less.

Abstract: An insulated wire, having a conductor whose outer circumference is covered with an insulating film, in which the insulating film is composed of a cured product of a thermosetting resin composition containing a thermoplastic resin, and the insulating film has fine air holes.

Abstract: A multilayer insulated electric wire comprising: a conductor; at least three extruded insulating layers covering the conductor; wherein an outermost layer (A) of the insulating layers is composed of an extruded coating layer containing a polyamide resin and the film thickness is 25 ?m or less, wherein an inner layer (B) of the extruded insulating layers is composed of an extruded coating layer containing a crystalline resin having a melting point of 225° C. or more or an amorphous resin having a glass transition temperature of 200° C. or more.

Abstract: An inverter surge-resistant insulated wire, having an enamel baked layer, an adhesive layer, and an extrusion-coated resin layer, around the outer periphery of a conductor, wherein the sum of the thickness of the enamel baked layer, the extrusion-coated resin layer, and the adhesive layer is 60 ?m or more, wherein the thickness of the enamel baked layer is 50 ?m or less, and wherein the extrusion-coated resin layer is formed from a polyphenylene sulfide resin composition, which contains a polyphenylene sulfide polymer having a melt viscosity at 300° C. of 100 Pa·s or more, 2 to 8 mass % of a thermoplastic elastomer, and an antioxidant, and which has a tensile modulus of elasticity at 25° C. of 2,500 MPa or more, and a tensile modulus of elasticity at 250° C. of 10 MPa or more.

Abstract: A biconical antenna according to the present invention includes a columnar dielectric member having frustum-shaped cavities extending respectively from an upper surface and a lower surface toward a center of the columnar dielectric member, wherein flat surfaces of apex portions of the frustum-shaped cavities are parallel and in opposition to one another; a frustum-shaped feeder portion made of a conductive film provided on an inner surface of the upper cavity; and a frustum-shaped ground portion made of a conductive film provided on an inner surface of the lower cavity. The present invention realizes a more compact biconical antenna by filling the dielectric member between the feeder portion and the ground portion of the biconical antenna.

Abstract: A biconical antenna according to the present invention includes a columnar dielectric member having frustum-shaped cavities extending respectively from an upper surface and a lower surface toward a center of the columnar dielectric member, wherein flat surfaces of apex portions of the frustum-shaped cavities are parallel and in opposition to one another; a frustum-shaped feeder portion made of a conductive film provided on an inner surface of the upper cavity; and a frustum-shaped ground portion made of a conductive film provided on an inner surface of the lower cavity. The present invention realizes a more compact biconical antenna by filling the dielectric member between the feeder portion and the ground portion of the biconical antenna.

Abstract: The floor of a passenger cabin in a railway car is mounted on a base plate 23 of an underframe 11 via plural common joists 33, 34. The vibration of the truck is transmitted via a center pin 27, a bolster 25, center sills, a base plate 23, and common joists 33, 34 to the floor 31, thereby vibrating the floor. Out of the common joists 33 and 34, the common joists 34 that are positioned near the width-direction-center of the car body do not extend beyond the center sill 25 toward the longitudinal end of the car body. This arrangement reduces the vibration of the floor 31 positioned at the longitudinal end portion of the car body.

Abstract: The floor of a passenger cabin in a railway car is mounted on a base plate 23 of an underframe 11 via plural common joists 33, 34. The vibration of the truck is transmitted via a center pin 27, a bolster 25, center sills, a base plate 23, and common joists 33, 34 to the floor 31, thereby vibrating the floor. Out of the common joists 33 and 34, the common joists 34 that are positioned near the width-direction-center of the car body do not extend beyond the center sill 25 toward the longitudinal end of the car body. This arrangement reduces the vibration of the floor 31 positioned at the longitudinal end portion of the car body.