Patents by Inventor Daisuke Sanga
Daisuke Sanga has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9620689Abstract: A semiconductor light emitting device that achieves miniaturization and high brightness is provided. The semiconductor light emitting device has a light extraction surface (6) parallel to a lamination direction of a semiconductor layer (2). The semiconductor light emitting device includes a light guide member (3) placed on the semiconductor layer (2) and having a sloped surface (7) with a side surface opposite to the light extraction surface (6) sloped to the light extraction surface and a light-reflecting member (4) placed on a surface of the light guide member including at least the sloped surface of the light guide member.Type: GrantFiled: June 16, 2016Date of Patent: April 11, 2017Assignee: NICHIA CORPORATIONInventors: Daisuke Sanga, Yuta Oka
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Patent number: 9518718Abstract: Provided is a bandpass filter for a light emitting device that can improve the light emission efficiency in use for a light emitting device, and a light emitting device that can obtain the high light emission efficiency by using the bandpass filter. The light emitting device includes a substrate; a light emitting element disposed over the substrate; a phosphor-containing layer containing at least one kind of phosphor; and a bandpass filter disposed over a surface of the phosphor-containing layer on the light emitting element side, the bandpass filter including a multilayer film having a plurality of first and second dielectric layers, the second dielectric layer being disposed over the first dielectric layer.Type: GrantFiled: December 24, 2013Date of Patent: December 13, 2016Assignee: NICHIA CORPORATIONInventors: Daisuke Sanga, Tomonori Morizumi, Naoki Azuma, Keisuke Sejiki, Kunihito Sugimoto
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Publication number: 20160300987Abstract: A semiconductor light emitting device that achieves miniaturization and high brightness is provided. The semiconductor light emitting device has a light extraction surface (6) parallel to a lamination direction of a semiconductor layer (2). The semiconductor light emitting device includes a light guide member (3) placed on the semiconductor layer (2) and having a sloped surface (7) with a side surface opposite to the light extraction surface (6) sloped to the light extraction surface and a light-reflecting member (4) placed on a surface of the light guide member including at least the sloped surface of the light guide member.Type: ApplicationFiled: June 16, 2016Publication date: October 13, 2016Applicant: NICHIA CORPORATIONInventors: Daisuke SANGA, Yuta OKA
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Patent number: 9397270Abstract: A semiconductor light emitting device that achieves miniaturization and high brightness is provided. The semiconductor light emitting device has a light extraction surface (6) parallel to a lamination direction of a semiconductor layer (2). The semiconductor light emitting device includes a light guide member (3) placed on the semiconductor layer (2) and having a sloped surface (7) with a side surface opposite to the light extraction surface (6) sloped to the light extraction surface and a light-reflecting member (4) placed on a surface of the light guide member including at least the sloped surface of the light guide member.Type: GrantFiled: April 17, 2015Date of Patent: July 19, 2016Assignee: NICHIA CORPORATIONInventors: Daisuke Sanga, Yuta Oka
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Patent number: 9180549Abstract: Provided is a wavelength conversion member, a light emitting device, and a method of manufacturing the light emitting device, with which leakage of unconverted light and contamination of an upper surface of an electrode are prevented, and restriction on a position at which the electrode is to be provided on the light-emitting element is eliminated. The wavelength conversion member provided on a light extracting side of a light-emitting element having an electrode on the light extracting side and configured to convert a wavelength of outgoing light from the light-emitting element includes: a wavelength converting plate having a phosphor excited by the outgoing light, and a through-hole penetrating between a front surface and a back surface so as to correspond to the electrode; and a via electrode made of a conductive material filled in the through-hole, and having an upper surface exposed at the front surface of the wavelength converting plate.Type: GrantFiled: August 26, 2014Date of Patent: November 10, 2015Assignee: NICHIA CORPORATIONInventor: Daisuke Sanga
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Publication number: 20150303356Abstract: A semiconductor light emitting device that achieves miniaturization and high brightness is provided. The semiconductor light emitting device has a light extraction surface (6) parallel to a lamination direction of a semiconductor layer (2). The semiconductor light emitting device includes a light guide member (3) placed on the semiconductor layer (2) and having a sloped surface (7) with a side surface opposite to the light extraction surface (6) sloped to the light extraction surface and a light-reflecting member (4) placed on a surface of the light guide member including at least the sloped surface of the light guide member.Type: ApplicationFiled: April 17, 2015Publication date: October 22, 2015Applicant: Nichia CorporationInventors: Daisuke SANGA, Yuta OKA
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Patent number: 9136450Abstract: A light emitting device is provided with a base member, an interconnect pattern disposed on an upper surface of the base member, a light reflecting layer comprising a first layer disposed on a part of the interconnect pattern and formed from a metal material, and a second layer made of a dielectric multilayer reflecting film made with stacked layers of dielectric films having different refractive indices and covering an upper surface and side surfaces of the first layer, a light emitting element chip fixed so as to face at least a part of the light reflecting layer, and a light transmissive sealing member sealing the light reflecting layer and the light emitting element chip.Type: GrantFiled: December 17, 2013Date of Patent: September 15, 2015Assignee: NICHIA CORPORATIONInventor: Daisuke Sanga
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Patent number: 9048405Abstract: The light emitting device comprising a light emitting element; and a wavelength converting member having a first face and a second face, in which light emitted from the light emitting element enters in through the first face, and a part of the second face serves as a light emitting face, wherein the light emitting element further comprises a reflection control structure around the light emitting face of the second face, and the reflection control structure comprises a reflection film on the wavelength converting member and an anti-reflection film on the reflection film.Type: GrantFiled: December 19, 2013Date of Patent: June 2, 2015Assignee: NICHIA CORPORATIONInventors: Daisuke Sanga, Takuya Okada, Keisuke Sejiki, Kunihito Sugimoto, Takao Kosugi, Dai Wakamatsu
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Patent number: 9048385Abstract: In a nitride semiconductor light emitting diode including a substrate made of a nitride semiconductor, a first conductive-type nitride semiconductor layer formed on the substrate, an active layer made of a nitride semiconductor, and a second conductive-type nitride semiconductor layer, characterized in that light emitted is extracted from the under surface side of the substrate or the upper surface side of the second conductive-type nitride semiconductor layer, an intermediate layer is formed between the substrate and the active layer, and dislocations is allowed to generates from the dislocation generating layer as the origin and to distribute in a light emitting region of the active layer.Type: GrantFiled: June 23, 2010Date of Patent: June 2, 2015Assignee: NICHIA CORPORATIONInventor: Daisuke Sanga
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Publication number: 20150124457Abstract: A light emitting device can further improve light extraction efficiency. A method of manufacturing such a light emitting device can also prove advantageous. The light emitting device includes a light emitting element, a light-transmissive member which is disposed on a light extracting surface side of the light emitting element, and a reflecting layer disposed on an element bonding surface of the light transmissive member where the light emitting element is disposed and adjacent to the light emitting element. The light-transmissive member, in a plan view, has a planar dimension greater than the light extracting surface of the light emitting element.Type: ApplicationFiled: November 6, 2014Publication date: May 7, 2015Inventors: Daisuke SANGA, Masatsugu ICHIKAWA, Shunsuke MINATO, Toru TAKASONE, Masahiko SANO
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Patent number: 8980661Abstract: Provided is a method for manufacturing a light emitting device comprising a light emitting element and an optical part, the method comprising the steps of (i) forming a hydroxyl film on a bonding surface of each of the light emitting element and the optical part by an atomic layer deposition, and (ii) bonding the bonding surfaces of the light emitting element and the optical part with each other, each of the bonding surfaces having the hydroxyl film formed thereon, wherein a substep is repeated at least one time in the step (i), in which substep a first raw material gas and a second raw material gas are sequentially supplied onto the bonding surfaces of the light emitting element and the optical part, and wherein the bonding of the bonding surfaces in the step (ii) is performed without a heating treatment.Type: GrantFiled: April 28, 2014Date of Patent: March 17, 2015Assignee: Nichia CorporationInventors: Masatsugu Ichikawa, Masahiko Sano, Daisuke Sanga, Toru Takasone, Shunsuke Minato
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Patent number: 8981420Abstract: A nitride semiconductor device includes a conductive oxide film with high reliability is provided. The nitride semiconductor device having a nitride semiconductor layer includes a conductive oxide film on the nitride semiconductor layer and a pad electrode on the conductive oxide film. The pad electrode includes a junction layer that contains a first metal and is in contact with the conductive oxide film, and a pad layer that contains a second metal.Type: GrantFiled: May 18, 2006Date of Patent: March 17, 2015Assignee: Nichia CorporationInventors: Takeshi Kususe, Yoshiyuki Aihara, Daisuke Sanga, Kouichiroh Deguchi
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Publication number: 20150062904Abstract: Provided is a wavelength conversion member, a light emitting device, and a method of manufacturing the light emitting device, with which leakage of unconverted light and contamination of an upper surface of an electrode are prevented, and restriction on a position at which the electrode is to be provided on the light-emitting element is eliminated. The wavelength conversion member provided on a light extracting side of a light-emitting element having an electrode on the light extracting side and configured to convert a wavelength of outgoing light from the light-emitting element includes: a wavelength converting plate having a phosphor excited by the outgoing light, and a through-hole penetrating between a front surface and a back surface so as to correspond to the electrode; and a via electrode made of a conductive material filled in the through-hole, and having an upper surface exposed at the front surface of the wavelength converting plate.Type: ApplicationFiled: August 26, 2014Publication date: March 5, 2015Inventor: Daisuke SANGA
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Publication number: 20150041844Abstract: A light emitting device has a lens, extended to outside of the mounting substrate on which a semiconductor a light emitting element is mounted, and leakage of light is reduced. A light emitting element, a substrate having the light emitting element mounted on its upper surface, and a lens, having a curved upper surface encloses the light emitting element and the upper surface of the substrate is included. From the bottom surface of the lens, a lower surface of the substrate is exposed. In a top view from a perpendicular direction to the upper surface of the substrate, the bottom surface of the lens includes an outer extending portion where the bottom surface is extended to outside of the substrate, and a inclined portion, which inclines with respect to a direction approximately in parallel to the upper surface of the substrate, at an end portion of the outer extending portion.Type: ApplicationFiled: August 6, 2014Publication date: February 12, 2015Inventors: Tsuyoshi OKAHISA, Yuta OKA, Daisuke SANGA
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Publication number: 20140322844Abstract: Provided is a method for manufacturing a light emitting device comprising a light emitting element and an optical part, the method comprising the steps of (i) forming a hydroxyl film on a bonding surface of each of the light emitting element and the optical part by an atomic layer deposition, and (ii) bonding the bonding surfaces of the light emitting element and the optical part with each other, each of the bonding surfaces having the hydroxyl film formed thereon, wherein a substep is repeated at least one time in the step (i), in which substep a first raw material gas and a second raw material gas are sequentially supplied onto the bonding surfaces of the light emitting element and the optical part, and wherein the bonding of the bonding surfaces in the step (ii) is performed without a heating treatment.Type: ApplicationFiled: April 28, 2014Publication date: October 30, 2014Applicant: NICHIA CORPORATIONInventors: Masatsuga Ichikawa, Masahiko Sano, Daisuke Sanga, Toru Takasone, Shunsuke Minato
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Publication number: 20140185299Abstract: Provided is a bandpass filter for a light emitting device that can improve the light emission efficiency in use for a light emitting device, and a light emitting device that can obtain the high light emission efficiency by using the bandpass filter. The light emitting device includes a substrate; a light emitting element disposed over the substrate; a phosphor-containing layer containing at least one kind of phosphor; and a bandpass filter disposed over a surface of the phosphor-containing layer on the light emitting element side, the bandpass filter including a multilayer film having a plurality of first and second dielectric layers, the second dielectric layer being disposed over the first dielectric layer.Type: ApplicationFiled: December 24, 2013Publication date: July 3, 2014Applicant: NICHIA COPRORATIONInventors: Daisuke SANGA, Tomonori Morizumi, Naoki Azuma, Keisuke Sejiki, Kunihito Sugimoto
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Publication number: 20140175491Abstract: The light emitting device comprising a light emitting element; and a wavelength converting member having a first face and a second face, in which light emitted from the light emitting element enters in through the first face, and a part of the second face serves as a light emitting face, wherein the light emitting element further comprises a reflection control structure around the light emitting face of the second face, and the reflection control structure comprises a reflection film on the wavelength converting member and an anti-reflection film on the reflection film.Type: ApplicationFiled: December 19, 2013Publication date: June 26, 2014Applicant: NICHIA CORPORATIONInventors: Daisuke SANGA, Takuya OKADA, Keisuke SEJIKI, Kunihito SUGIMOTO, Takao KOSUGI, Dai WAKAMATSU
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Publication number: 20140103383Abstract: A light emitting device is provided with a base member, an interconnect pattern disposed on an upper surface of the base member, a light reflecting layer comprising a first layer disposed on a part of the interconnect pattern and formed from a metal material, and a second layer made of a dielectric multilayer reflecting film made with stacked layers of dielectric films having different refractive indices and covering an upper surface and side surfaces of the first layer, a light emitting element chip fixed so as to face at least a part of the light reflecting layer, and a light transmissive sealing member sealing the light reflecting layer and the light emitting element chip.Type: ApplicationFiled: December 17, 2013Publication date: April 17, 2014Applicant: Nichia CorporationInventor: Daisuke SANGA
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Patent number: 8674387Abstract: A light emitting device is provided with a base member, an interconnect pattern disposed on an upper surface of the base member, a light reflecting layer comprising a first layer disposed on a part of the interconnect pattern and formed from a metal material, and a second layer made of a dielectric multilayer reflecting film made with stacked layers of dielectric films having different refractive indices and covering an upper surface and side surfaces of the first layer, a light emitting element chip fixed so as to face at least a part of the light reflecting layer, and a light transmissive sealing member sealing the light reflecting layer and the light emitting element chip.Type: GrantFiled: April 16, 2010Date of Patent: March 18, 2014Assignee: Nichia CorporationInventor: Daisuke Sanga
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Patent number: D747817Type: GrantFiled: September 17, 2014Date of Patent: January 19, 2016Assignee: NICHIA CORPORATIONInventors: Yuta Oka, Daisuke Sanga