Abstract: In a nitride semiconductor light emitting diode including a substrate made of a nitride semiconductor, a first conductive-type nitride semiconductor layer formed on the substrate, an active layer made of a nitride semiconductor, and a second conductive-type nitride semiconductor layer, characterized in that light emitted is extracted from the under surface side of the substrate or the upper surface side of the second conductive-type nitride semiconductor layer, an intermediate layer is formed between the substrate and the active layer, and dislocations is allowed to generates from the dislocation generating layer as the origin and to distribute in a light emitting region of the active layer.

Abstract: A light emitting device is provided with a base member, an interconnect pattern disposed on an upper surface of the base member, a light reflecting layer comprising a first layer disposed on a part of the interconnect pattern and formed from a metal material, and a second layer made of a dielectric multilayer reflecting film made with stacked layers of dielectric films having different refractive indices and covering an upper surface and side surfaces of the first layer, a light emitting element chip fixed so as to face at least a part of the light reflecting layer, and a light transmissive sealing member sealing the light reflecting layer and the light emitting element chip.

Abstract: A semiconductor light emitting device with improved efficiency in extracting light is provided. The semiconductor light emitting device comprises a first conductive type semiconductor layer, a light emitting layer, and a second conductive semiconductor layer stacked in this order, electrodes respectively connected to the first and second conductive semiconductor layers, the electrode connected to the second conductive type semiconductor layer comprising a lower conductive oxide film and an upper conductive oxide film disposed on the lower conductive oxide film, and a metal film disposed only on the upper conductive oxide film. The upper and lower conductive oxide films comprise an oxide including at least one element selected from the group consisting of zinc (Zn), indium (In), tin (Sn), and magnesium (Mg).

Abstract: A nitride semiconductor device having excellent ESD tolerance, by preventing uneven distribution of the electric current in the p-side nitride semiconductor layer. The p-side nitride semiconductor layer (40) comprises, from the active layer (30) side, (a) a p-side wide band gap layer (12) containing a p-type impurity and (b) a three-layer structure (15) comprising a first p-side nitride semiconductor layer (16), a second p-side nitride semiconductor layer (17), and a third p-side nitride semiconductor layer (18).

Abstract: A nitride semiconductor device having excellent ESD tolerance, by preventing uneven distribution of the electric current in the p-side nitride semiconductor layer. The p-side nitride semiconductor layer (40) comprises, from the active layer (30) side, (a) a p-side wide band gap layer (12) containing a p-type impurity and (b) a three-layer structure (15) comprising a first p-side nitride semiconductor layer (16), a second p-side nitride semiconductor layer (17), and a third p-side nitride semiconductor layer (18).

Abstract: A nitride semiconductor light emitting element is provided with: a substrate 11 having a pair of main surfaces that face each other; a nitride semiconductor layer of a first conductivity type layered on one of the main surfaces of substrate 11; a nitride semiconductor layer of a second conductivity type layered on the nitride semiconductor layer of the first conductivity type; an active layer 14 formed between the nitride semiconductor layer of the first conductivity type and the nitride semiconductor layer of the second conductivity type; and a reflective layer 16 formed on the nitride semiconductor layer of the second conductivity type for reflecting light from active layer 14 toward the nitride semiconductor layer of the second conductivity type. This nitride semiconductor light emitting element can be mounted on a circuit board, with the other main surface of the above described substrate 11 being used as the main light emitting surface.

Abstract: A nitride semiconductor device includes a conductive oxide film with high reliability is provided. The nitride semiconductor device having a nitride semiconductor layer includes a conductive oxide film on the nitride semiconductor layer and a pad electrode on the conductive oxide film. The pad electrode includes a junction layer that contains a first metal and is in contact with the conductive oxide film, and a pad layer that contains a second metal.

Abstract: A semiconductor light emitting device with improved efficiency in extracting light is provided. The semiconductor light emitting device comprises a first conductive type semiconductor layer, a light emitting layer, and a second conductive semiconductor layer stacked in this order, electrodes respectively connected to the first and second conductive semiconductor layers, the electrode connected to the second conductive type semiconductor layer comprising a lower conductive oxide film and an upper conductive oxide film disposed on the lower conductive oxide film, and a metal film disposed only on the upper conductive oxide film. The upper and lower conductive oxide films comprise an oxide including at least one element selected from the group consisting of zinc (Zn), indium (In), tin (Sn), and magnesium (Mg).

Abstract: A nitride semiconductor light emitting element is provided with: a substrate 11 having a pair of main surfaces that face each other; a nitride semiconductor layer of a first conductivity type layered on one of the main surfaces of substrate 11; a nitride semiconductor layer of a second conductivity type layered on the nitride semiconductor layer of the first conductivity type; an active layer 14 formed between the nitride semiconductor layer of the first conductivity type and the nitride semiconductor layer of the second conductivity type; and a reflective layer 16 formed on the nitride semiconductor layer of the second conductivity type for reflecting light from active layer 14 toward the nitride semiconductor layer of the second conductivity type. This nitride semiconductor light emitting element can be mounted on a circuit board, with the other main surface of the above described substrate 11 being used as the main light emitting surface.