Abstract: According to one embodiment, a magnetic device includes a magnetoresistive effect element including a first ferromagnet, a conductor, and an oxide provided between the first ferromagnet and the conductor, the oxide including a first oxide of a rare-earth element and a second oxide of an element of which a covalent radius is smaller than a covalent radius of the rare-earth element.

Abstract: A high frequency circuit (4) includes a first terminal (40a), a second terminal (51a), a third terminal (51b), a first path, a second path, a first matching element (41) and a first amplifier (50a) both arranged in the first path, a first switch (42) connected between a reference terminal and a part of the first path, the part spanning between the first matching element and the first amplifier, a second matching element (43) and a second amplifier (50b) both arranged in the second path, and a second switch (44) connected between the reference terminal and a part of the second path, the part spanning between the second matching element and the second amplifier.

Abstract: A variable gain circuit includes: input/output terminals P1 and P2 configured to input/output a high frequency signal; a transistor having a signal terminal “a” connected to the input/output terminal P1, a signal terminal “b” connected to the input/output terminal P2, and a control terminal; bias terminals B1, B2 and B3, and a reference voltage terminal respectively set to a first variable voltage, a second variable voltage, a third variable voltage, and a fixed voltage that are independent of one another; an impedance element connected between the bias terminal B1 and the signal terminal a; an impedance element connected between the bias terminal B2 and the signal terminal b; an impedance element connected between the bias terminal B3 and the control terminal; and a first switch configured to switch between connecting and not connecting the reference voltage terminal and the control terminal.

Abstract: According to one embodiment, a device includes an element including: a first stacked; a first nonmagnet on the first stacked; a second stacked on the first nonmagnet; a second nonmagnet on the second stacked; and a first magnet on the second nonmagnet. The second stacked including: a second magnet in contact with the second nonmagnet, including Fe and Co; a third nonmagnet at an opposite side of the second nonmagnet relative to the second magnet, including Mo or W; and a third magnet on the first nonmagnet, in contact with the third nonmagnet, including Fe and Co. An atomic ratio of Fe in the third magnet is lower than an atomic ratio of Fe in the second magnet.

Abstract: A battery device for a vehicle, which can be miniaturized while including ancillary instruments such as a relay device. The battery device is mounted in a lower portion of a vehicle, and including a battery case; a plurality of battery modules accommodated in the battery case and arranged such that at least some of the battery modules are stacked in a plurality of levels; and a first relay device that switches connection and disconnection between external electric devices and the battery modules. The first relay device is disposed on a side in a vehicle width direction of a portion where the battery modules are stacked in a plurality of levels.

Abstract: A fuel tank vent shutoff valve is provided with a leak countermeasure for preventing liquid fuel leaking from the vent shutoff valve into an evaporative emissions canister. In one embodiment, the vent shutoff valve includes a case disposed over a valve body. The case includes a floor surface surrounding an opening and a cover disposed over the case. The case also includes a flange structure extending away from the floor surface towards an inside surface of the cover. The inside surface includes an annular wall aligned over the opening and extending towards the floor surface of the case. The annular wall includes a first section having a first height that is greater than a second height of a second section. A free end of the first section extends past a free end of the flange structure of the case to prevent fuel from leaking into the evaporative emissions canister.

Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. The first magnetic layer includes a first surface in contact with the nonmagnetic layer and a second surface on an opposite side to the first surface, a diameter of the second surface of the first magnetic layer is less than a diameter of the first surface of the first magnetic layer and is 10 nm or more, and a ratio of a height of the first magnetic layer to the diameter of the second surface of the first magnetic layer is 0.9 or more.

Abstract: According to one embodiment, a magnetic device includes a magnetoresistive effect element. The magnetoresistive effect element includes a first nonmagnet, a second nonmagnet, a first ferromagnet between the first nonmagnet and the second nonmagnet, a third nonmagnet including a rare-earth oxide, the second nonmagnet between the first ferromagnet and the third nonmagnet, and a fourth nonmagnet between the second nonmagnet and the third nonmagnet and including a metal.

Abstract: A switch module includes a first terminal, first and second filters, and first and second switches. Impedance of the first filter for a signal in a stop band is capacitive. When the first switch is turned OFF, impedance of the first switch is capacitive, and impedance of the first filter seen from an end portion of the first switch connected to the first filter is not in a short state and impedance of the first filter seen from the first terminal is in an open state.

Abstract: A switch module includes a first terminal, first and second filters, and first and second switches. Impedance of the first filter for a signal in a stop band is capacitive. When the first switch is turned OFF, impedance of the first switch is capacitive, and impedance of the first filter seen from an end portion of the first switch connected to the first filter is not in a short state and impedance of the first filter seen from the first terminal is in an open state.

Abstract: An information processing apparatus of the present invention correctly determines in advance whether interference occurs between an object around a target workpiece to be grasped, and a hand. The information processing apparatus includes an obtaining unit configured to obtain a range image of a space including a plurality of workpieces, an identification unit configured to identify, from the obtained range image, an area of the target workpiece to be grasped among the plurality of workpieces, an interference determination unit configured to determine whether interference occurs between an area included in the range image and a grasping unit configured to grasp the target workpiece, and an output unit configured to output, based on a result of the interference determination by the interference determination unit, a result of determination as to whether interference occurs between an area excluding the area of the target workpiece and the grasping unit.

Abstract: A high frequency circuit (4) includes a first terminal (40a), a second terminal (51a), a third terminal (51b), a first path, a second path, a first matching element (41) and a first amplifier (50a) both arranged in the first path, a first switch (42) connected between a reference terminal and a part of the first path, the part spanning between the first matching element and the first amplifier, a second matching element (43) and a second amplifier (50b) both arranged in the second path, and a second switch (44) connected between the reference terminal and a part of the second path, the part spanning between the second matching element and the second amplifier.

Abstract: A radio frequency circuit includes a switching circuit, an amplifying circuit, and a potential stabilizing circuit. The switching circuit includes a switch disposed on a path connecting a first terminal, to which a radio-frequency signal is input, to a second terminal, from which the radio-frequency signal is output, a first capacitor disposed between the first terminal and the switch, and a second capacitor disposed between the switch and the second terminal. The amplifying circuit includes an amplifier disposed between the switching circuit and the second terminal, a third capacitor disposed between the switching circuit and the amplifier, and a fourth capacitor disposed between the amplifier and the second terminal. The potential stabilizing circuit is connected to a first node which is located between the switching circuit and the amplifying circuit and which is located on a path connecting the second capacitor to the third capacitor.

Abstract: According to one embodiment, a semiconductor storage device includes: a first memory cell and a second memory cell, each including a switching element and a resistance change element coupled to the switching element, and the first memory cell and the second memory cell being adjacent to each other; a non-active member having a switching function between the switching element of the first memory cell and the switching element of the second memory cell; and an insulator which covers at least one of an upper surface or a lower surface of the non-active member, a side surface of the non-active member, a side surface of the switching element of the first memory cell, and a side surface of the switching element of the second memory cell.

Abstract: A jig (31) is placed on a cylinder block (11) set in an inverted position, and a crankshaft (5) is lifted upward from a main bearing part (17) and held at a predetermined height position. A lower link (7) temporarily fitted to a crank pin (6) in the previous step is rotated about the crank pin (6) as a center by a robot hand, and held in a predetermined inclined position in which a dividing surface (28) becomes vertical. In this state, a pair of bolts (29) is horizontally fastened from the right and the left by using a nut runner (55).

Abstract: The invention relates to a pressure-sensitive adhesive tape including: a pressure-sensitive adhesive layer. The pressure-sensitive adhesive tape has a thickness greater than 150 ?m and smaller than 1,500 ?m, an elongation at break of 600% to 3,000%, and a stress at break of 2.5 to 80.0 MPa. According to the invention, the conformity and the adhesion with respect to an adherend, particularly, a hard adherend, are excellent, and excellent re-peeling properties are obtained, so that the pressure-sensitive adhesive tape can be stretched and peeled off in a horizontal direction, without necessity for embrittling the pressure-sensitive adhesive tape by heating or by using an organic solvent or the like or without remaining of the pressure-sensitive adhesive on the adherend, in a case of peeling the pressure-sensitive adhesive tape.

Abstract: An information processing apparatus of the present invention correctly determines in advance whether interference occurs between an object around a target workpiece to be grasped, and a hand. The information processing apparatus includes an obtaining unit configured to obtain a range image of a space including a plurality of workpieces, an identification unit configured to identify, from the obtained range image, an area of the target workpiece to be grasped among the plurality of workpieces, an interference determination unit configured to determine whether interference occurs between an area included in the range image and a grasping unit configured to grasp the target workpiece, and an output unit configured to output, based on a result of the interference determination by the interference determination unit, a result of determination as to whether interference occurs between an area excluding the area of the target workpiece and the grasping unit.

Abstract: An amplifier according to an embodiment of the present disclosure includes a first transistor and a first matching circuit. The first matching circuit is connected between an input terminal and a control terminal of the first transistor. A first terminal of the first transistor is connected to a ground. A second terminal of the first transistor is connected to a power supply and an output terminal. The first matching circuit includes a first inductor, a second inductor, and a first switch. The first inductor has an end connected to the control terminal. The second inductor has an end connected to the other end of the first inductor. The first switch is configured to selectively switch between electrical continuity between the input terminal and the other end of the first inductor and electrical continuity between the input terminal and the other end of the second inductor.

Abstract: Provided is an electrochemical cell packaging material with excellent electrolyte resistance. An electrochemical cell packaging material includes the following in a laminated structure: a substrate layer that, at a minimum, includes resin film; a protective layer that is arranged as the outermost layer and protects the substrate layer; a thermal adhesion layer that is arranged as the innermost layer and which includes thermal adhesion resin; and a barrier layer that includes metal foil and is arranged between the substrate layer and the thermal adhesion layer. The protective layer is formed of an epoxy resin that has bisphenol A or bisphenol F as an element in the backbone.

Abstract: According to one embodiment, a magnetic memory device includes a first memory cell which includes a first stacked structure including a magnetic layer, and a second memory cell which is provided on the first memory cell and includes a second stacked structure including a magnetic layer, wherein each of the first stacked structure and the second stacked structure has a structure in which a plurality of layers including a predetermined layer are stacked, and the predetermined layer included in the first stacked structure and the predetermined layer included in the second stacked structure have different thicknesses.