Abstract: According to one embodiment, a semiconductor storage device includes: a first memory cell and a second memory cell, each including a switching element and a resistance change element coupled to the switching element, and the first memory cell and the second memory cell being adjacent to each other; a non-active member having a switching function between the switching element of the first memory cell and the switching element of the second memory cell; and an insulator which covers at least one of an upper surface or a lower surface of the non-active member, a side surface of the non-active member, a side surface of the switching element of the first memory cell, and a side surface of the switching element of the second memory cell.

Abstract: Provided is a method for fabricating an electronic device including a variable resistance element which includes a free layer formed over a substrate and having a changeable magnetization direction, a pinned layer having a pinned magnetization direction, a tunnel barrier layer interposed between the free layer and the pinned layer, and a magnetic correction layer suitable for reducing the influence of a stray field generated by the pinned layer. The method may include: cooling the substrate; and forming the magnetic correction layer over the cooled substrate.

Abstract: According to one embodiment, a device includes an element including: a first stacked; a first nonmagnet on the first stacked; a second stacked on the first nonmagnet; a second nonmagnet on the second stacked; and a first magnet on the second nonmagnet. The second stacked including: a second magnet in contact with the second nonmagnet, including Fe and Co; a third nonmagnet at an opposite side of the second nonmagnet relative to the second magnet, including Mo or W; and a third magnet on the first nonmagnet, in contact with the third nonmagnet, including Fe and Co. An atomic ratio of Fe in the third magnet is lower than an atomic ratio of Fe in the second magnet.

Abstract: According to one embodiment, a magnetic storage device includes a magnetoresistive effect element. The magnetoresistive effect element including: a first ferromagnetic layer; a second ferromagnetic layer; a first non-magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer; a second non-magnetic layer at an opposite side of the first non-magnetic layer relative to the first ferromagnetic layer; and a third non-magnetic layer at an opposite side of the first ferromagnetic layer relative to the second non-magnetic layer. The second non-magnetic layer including rare-earth oxide, and the third non-magnetic layer including ruthenium (Ru) or molybdenum (Mo).

Abstract: A filler-loaded thermal conductive liquid compositions formed by dispersing a powder composition, which contains polymer particles containing thermoplastic polymer particles, and thermal conductive filler particles containing particles having a graphite-like structure, obtained by pulverizing 5-70 parts by weight of the polymer particles and 30-95 parts by weight of the thermal conductive filler particles, the filler particles being covered with micronized polymer particles and the covered particles being uniformly dispersed, using 25-250 parts by weight of a liquid reactive dispersing medium and/or a dispersing medium containing a thermoplastic polymer having a deflection temperature under load or a melting point lower than the thermoplastic polymer used in the powder composition, and the liquid composition having conditions that a thermal conductive infinite cluster exhibiting a thermal conductivity of 1-35 w/mk is formed and a concentration of thermal conductive filler particles is equal to or more than a

Abstract: A tetracarboxylic dianhydride includes: at least one acid dianhydride (A) selected from the group consisting of compounds each having an endo/exo type three-dimensional structure represented by a particular general formula and their enantiomeric compounds each having an exo/endo type three-dimensional structure; and/or an acid dianhydride (B) having an endo/endo type three-dimensional structure represented by a particular general formula, wherein a content of the acid dianhydride (B) in a total amount of the acid dianhydrides (A) and (B) is 30 to 100% by mole in a mole ratio.

Abstract: Setting a target region determined based on a positional relationship between an object and a holding unit at a time of holding the object with the holding unit, acquiring measurement data on a plurality of objects, recognizing positions and orientations of the plurality of objects based on the acquired measurement data and a three-dimensional shape model of the objects, calculating a position of the set target region for each of the plurality of recognized objects based on the recognized positions and orientations of the plurality of objects, performing interference judgment about interference between the holding unit and the object in an order determined based on the positions of the target regions, and causing the holding unit to hold one of the plurality of recognized objects based on a result of the performed interference judgment.

Abstract: The present invention provides a means for suppressing an occurrence of a ghost by enhancing diffraction efficiency of a holographic optical element having a volume hologram recording layer. The present invention is a holographic optical element including: a volume hologram recording layer containing a photopolymer; and at least one adjacent layer which is in contact with the volume hologram recording layer and contains a resin, wherein a diffraction grating is formed so as to extend from the volume hologram recording layer to the adjacent layer.

Abstract: There is provided a cell observation apparatus having a sterile chamber 3 containing a culture vessel 1 and a transparent observation window 11 provided in a bottom portion of the sterile chamber 3 and having the culture vessel 1 placed thereabove, wherein the camera 4 and the lighting 5 are provided below the observation window 11. The cells in the culture vessel 1 are imaged through the observation window 11 by setting the focus of the camera 4 to a bottom surface 1d of the culture vessel 1. The lighting 5 emits inspection light L as spot light where the light is not diffused, and an imaging range of the camera 4 is positioned inside an irradiation range of the inspection light L on the bottom surface 1d of the culture vessel 1.

Abstract: A tetracarboxylic dianhydride, which is a compound represented by the following general formula (1): [in the formula (1), A represents a divalent aromatic group in which the number of carbon atoms forming an aromatic ring is 6 to 30 or the like, and multiple R1s each independently represent a hydrogen atom or the like].

Abstract: An amplification circuit includes a filter circuit, an amplifier, a capacitor, a bypass line, and a switch circuit that includes a first FET and a second FET connected in series between one end and the other end of the bypass line, a first resistance element connected in series to a gate of the first FET, and a second resistance element connected in series to a gate of the second FET. A first control signal is supplied to the gate of the first FET. A second control signal is supplied to the gate of the second FET. A product of a gate length and a gate width of the first FET and a resistance value of the first resistance element is smaller than a product of a gate length and a gate width of the second FET and a resistance value of the second resistance element.

Abstract: A magnetoresistive memory device includes a first magnetic layer having a variable magnetization direction, a second magnetic layer, a magnetization direction of the second magnetic layer being invariable, a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, and a second nonmagnetic layer provided on the first magnetic layer, which is opposite the first nonmagnetic layer. The first magnetic layer has a stacked layer structure in which an amorphous magnetic material layer is sandwiched between crystalline magnetic material layers. The magnetoresistive memory device further includes nonmagnetic material layers provided between one of the crystalline magnetic material layers and the amorphous magnetic material layer, and between the other crystalline magnetic layer and the amorphous magnetic material layer, respectively.

Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer, a second magnetic layer and a nonmagnetic layer between the first magnetic layer and the second magnetic layer, and a sidewall insulating layer provided on a side surface of the stacked structure and containing boron (B).

Abstract: According to one embodiment, a magnetic device comprising a magnetoresistive effect element, wherein the magnetoresistive effect element includes: a first ferromagnetic body, a second ferromagnetic body, and a first rare-earth ferromagnetic oxide that is provided between the first ferromagnetic body and the second ferromagnetic body and magnetically joins the first ferromagnetic body and the second ferromagnetic body.

Abstract: A magnetoresistive memory device includes a first magnetic layer having a variable magnetization direction, a second magnetic layer, a magnetization direction of the second magnetic layer being invariable, a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, and a second nonmagnetic layer provided on the first magnetic layer, which is opposite the first nonmagnetic layer. The first magnetic layer has a stacked layer structure in which an amorphous magnetic material layer is sandwiched between crystalline magnetic material layers. The magnetoresistive memory device further includes nonmagnetic material layers provided between one of the crystalline magnetic material layers and the amorphous magnetic material layer, and between the other crystalline magnetic layer and the amorphous magnetic material layer, respectively.

Abstract: A technique is provided, with which, even for an object which has a shape prone to be erroneously recognized and for which it is difficult to generate an initial value expected to produce a true value through fitting, it is possible to generate an appropriate initial value candidate through intuitive input and reduce erroneous recognition. An information processing apparatus includes a model acquiring unit configured to acquire a three-dimensional shape model of a target object, a display control unit configured to cause a display unit to display the three-dimensional shape model, a setting unit configured to set first and second orientations different from each other on the basis of the three-dimensional shape model displayed in the display unit, a parameter deriving unit configured to derive a transformation parameter that transforms the first orientation into the second orientation, and a storage unit configured to store the transformation parameter.

Abstract: An ultrasonic flaw detector for a composite material constituted by a plurality of materials which are different in physical properties from one another includes: a section specifier configured to specify first and second sections of an RF signal of a reflected wave of an ultrasonic wave with which the composite material is irradiated, a material reflected wave being possibly generated in the first section, an interface reflected wave being possibly generated in the second section; a material flaw determiner configured to determine whether or not a value of the RF signal exceeds a positive first threshold in the first section; and an interface flaw determiner configured to determine whether or not the value of the RF signal falls below a negative second threshold in the second section.

Abstract: A polyimide, comprising at least one repeating unit selected from the group consisting of a repeating unit (A1) represented by a particular general formula, a repeating unit (B1) represented by a particular general formula, and a repeating unit (C1) represented by a particular general formula.

Abstract: An amplification circuit includes: a power supply terminal that is connected to a power supply; a first transistor that has a first source terminal, a first drain terminal, and a first gate terminal to which a high-frequency signal is inputted; a second transistor that has a second source terminal that is connected to the first drain terminal, a second drain terminal that outputs a high frequency signal, and a second gate terminal that is grounded; a capacitor that is serially arranged on a second path that connects the second gate terminal and the power supply terminal; and a switch that is serially arranged on a first path, which connects the second drain terminal and the power supply terminal, or the second path. The second drain terminal and the second gate terminal are connected to each other via the switch and the capacitor.