Patents by Inventor Daniel C. Worledge

Daniel C. Worledge has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Perpendicular magnetic anisotropy BCC multilayers
    Patent number: 9620708
    Abstract: A magnetic material includes a cobalt layer between opposing iron layers. The iron layers include iron and are body-centered cubic (BCC), the cobalt layer comprises cobalt and is BCC or amorphous, and the magnetic material has a perpendicular magnetic anisotropy (PMA).
    Type: Grant
    Filed: June 9, 2016
    Date of Patent: April 11, 2017
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Guohan Hu, Daniel C. Worledge
  • DOUBLE SPIN FILTER TUNNEL JUNCTION
    Publication number: 20170098762
    Abstract: A memory device that includes a first magnetic insulating tunnel barrier reference layer present on a first non-magnetic metal electrode, and a free magnetic metal layer present on the first magnetic insulating tunnel barrier reference layer. A second magnetic insulating tunnel barrier reference layer may be present on the free magnetic metal layer, and a second non-magnetic metal electrode may be present on the second magnetic insulating tunnel barrier. The first and second magnetic insulating tunnel barrier reference layers are arranged so that their magnetizations are aligned to be anti-parallel.
    Type: Application
    Filed: October 20, 2016
    Publication date: April 6, 2017
    Inventor: Daniel C. Worledge
  • DOUBLE SPIN FILTER TUNNEL JUNCTION
    Publication number: 20170098761
    Abstract: A memory device that includes a first magnetic insulating tunnel barrier reference layer present on a first non-magnetic metal electrode, and a free magnetic metal layer present on the first magnetic insulating tunnel barrier reference layer. A second magnetic insulating tunnel barrier reference layer may be present on the free magnetic metal layer, and a second non-magnetic metal electrode may be present on the second magnetic insulating tunnel barrier. The first and second magnetic insulating tunnel barrier reference layers are arranged so that their magnetizations are aligned to be anti-parallel.
    Type: Application
    Filed: October 6, 2015
    Publication date: April 6, 2017
    Inventor: Daniel C. Worledge
  • OTP MRAM
    Patent number: 9614144
    Abstract: Techniques for forming OTP memory elements with reduced breakdown voltage are provided. In one aspect, a method of forming an OTP MRAM element includes the steps of: creating a substrate having surface topology; and forming the OTP MRAM element on the substrate over the surface topology, wherein the OTP MRAM element comprises a first magnetic metal layer and a second metal magnetic layer separated by a tunnel barrier, and wherein by forming the OTP MRAM element over the surface topology the tunnel barrier has both a first thickness T1 and second thickness T2, wherein T1 is greater than T2. A method of forming a device having both MTP MRAM and OTP MRAM elements is provided, as is an MRAM device.
    Type: Grant
    Filed: December 21, 2015
    Date of Patent: April 4, 2017
    Assignee: International Business Machines Corporation
    Inventors: Anthony J. Annunziata, Daniel C. Worledge
  • NONVOLATILE MEMORY INTERFACE FOR METADATA SHADOWING
    Publication number: 20170075592
    Abstract: A method for memory management includes streaming bits to a memory buffer on a memory device using a write data channel that optimizes a speed of writing to the memory devices. The bits are written to non-volatile memory cells in the memory device at a first speed, using a bi-directional bus. Bits are read from the memory device over a read channel to provide reads at a second speed that is slower than the first speed, using the bi-directional bus.
    Type: Application
    Filed: November 4, 2016
    Publication date: March 16, 2017
    Inventors: JOHN K. DEBROSSE, BLAKE G. FITCH, MICHELE M. FRANCESCHINI, TODD E. TAKKEN, DANIEL C. WORLEDGE
  • STRUCTURE FOR THERMALLY ASSISTED MRAM
    Publication number: 20170062701
    Abstract: A mechanism is provided for fabricating a thermally assisted magnetoresistive random access memory device. A bottom thermal barrier is formed on a bottom contact. A magnetic tunnel junction is formed on the bottom thermal barrier. The magnetic tunnel junction includes a top ferromagnetic layer formed on a tunnel barrier. The tunnel barrier is formed on a bottom ferromagnetic layer. A top thermal barrier is formed on the top ferromagnetic layer. A top contact is formed on the top thermal barrier. The top contact is reduced to a first diameter. The tunnel barrier and the bottom ferromagnetic layer each have a second diameter. The first diameter of the top contact is smaller than the second diameter.
    Type: Application
    Filed: November 9, 2016
    Publication date: March 2, 2017
    Inventors: Anthony J. Annunziata, Lucian Prejbeanu, Philip L. Trouilloud, Daniel C. Worledge
  • CURRENT CONSTRICTION FOR SPIN TORQUE MRAM
    Publication number: 20170054072
    Abstract: Magnetoresistive random access memory (MRAM) devices include a first magnetic layer. A tunnel barrier layer is formed on the first magnetic layer. The tunnel barrier includes first regions having a first thickness and second regions having a second thickness that is greater than the first thickness. A second magnetic layer is formed on the tunnel barrier layer.
    Type: Application
    Filed: November 4, 2016
    Publication date: February 23, 2017
    Inventors: Guohan Hu, Daniel C. Worledge
  • Electrostatically controlled magnetic logic device
    Patent number: 9577180
    Abstract: A magnetic logic cell includes a first electrode portion, a magnetic portion arranged on the first electrode, the magnetic portion including an anti-ferromagnetic material or a ferrimagnetic material, a dielectric portion arranged on the magnetic portion, and a second electrode portion arranged on the dielectric portion.
    Type: Grant
    Filed: January 29, 2015
    Date of Patent: February 21, 2017
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ALABAMA
    Inventors: Marcin J. Gajek, Daniel C. Worledge, William H. Butler
  • Electrostatically controlled magnetic logic device
    Patent number: 9577179
    Abstract: A magnetic logic cell includes a first electrode portion, a magnetic portion arranged on the first electrode, the magnetic portion including an anti-ferromagnetic material or a ferrimagnetic material, a dielectric portion arranged on the magnetic portion, and a second electrode portion arranged on the dielectric portion.
    Type: Grant
    Filed: February 7, 2013
    Date of Patent: February 21, 2017
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ALABAMA
    Inventors: Marcin J. Gajek, Daniel C. Worledge, William H. Butler
  • MAGNETIC FIELD SENSOR BASED ON TOPOLOGICAL INSULATOR AND INSULATING COUPLER MATERIALS
    Publication number: 20170047506
    Abstract: Embodiments are directed to a sensor having a first electrode, a second electrode and a detector region electrically coupled between the first electrode region and the second electrode region. The detector region includes a first layer having a topological insulator. The topological insulator includes a conducting path along a surface of the topological insulator, and the detector region further includes a second layer having a first insulating magnetic coupler, wherein a magnetic field applied to the detector region changes a resistance of the conducting path.
    Type: Application
    Filed: August 11, 2015
    Publication date: February 16, 2017
    Inventors: Anthony J. Annunziata, Joel D. Chudow, Daniel C. Worledge
  • MAGNETIC FIELD SENSOR BASED ON TOPOLOGICAL INSULATOR AND INSULATING COUPLER MATERIALS
    Publication number: 20170047511
    Abstract: Embodiments are directed to a sensor having a first electrode, a second electrode and a detector region electrically coupled between the first electrode region and the second electrode region. The detector region includes a first layer having a topological insulator. The topological insulator includes a conducting path along a surface of the topological insulator, and the detector region further includes a second layer having a first insulating magnetic coupler, wherein a magnetic field applied to the detector region changes a resistance of the conducting path.
    Type: Application
    Filed: November 24, 2015
    Publication date: February 16, 2017
    Inventors: Anthony J. Annunziata, Joel D. Chudow, Daniel C. Worledge
  • Nonvolatile memory interface for metadata shadowing
    Patent number: 9569109
    Abstract: A memory includes non-volatile memory devices, each of which has multiple nonvolatile memory cells. A write controller streams bits to the memory devices in groups of N bits using a write data channel having write bus drivers, receivers and write bus topology that take advantage of high-speed signaling to optimize a speed of writing to the memory devices. Consecutive groups of bits are written to consecutive memory cells within respective memory devices. A self-referenced read controller reads bits from the memory devices using a read channel having read drivers, receivers, and read bus topology that include no design requirements for high-speed or low-latency data transmission.
    Type: Grant
    Filed: June 23, 2015
    Date of Patent: February 14, 2017
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: John K. Debrosse, Blake G. Fitch, Michele M. Franceschini, Todd E. Takken, Daniel C. Worledge
  • Double synthetic antiferromagnet using rare earth metals and transition metals
    Patent number: 9564580
    Abstract: A mechanism relates to magnetic random access memory (MRAM). A free magnetic layer is provided and first fixed layers are disposed above the free magnetic layer. Second fixed layers are disposed below the free magnetic layer. The first fixed layers and the second fixed layers both comprise a rare earth element.
    Type: Grant
    Filed: December 29, 2014
    Date of Patent: February 7, 2017
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Guohan Hu, Daniel C. Worledge
  • CURRENT CONSTRICTION FOR SPIN TORQUE MRAM
    Publication number: 20170033280
    Abstract: Magnetoresistive random access memory (MRAM) devices include a first magnetic layer. A tunnel barrier layer is formed on the first magnetic layer. The tunnel barrier includes first regions having a first thickness and second regions having a second thickness that is greater than the first thickness. A second magnetic layer is formed on the tunnel barrier layer.
    Type: Application
    Filed: May 18, 2016
    Publication date: February 2, 2017
    Inventors: Guohan Hu, Daniel C. Worledge
  • NONVOLATILE MEMORY INTERFACE FOR METADATA SHADOWING
    Publication number: 20170017396
    Abstract: A memory includes multiple non-volatile memory devices, each having multiple nonvolatile memory cells. A write controller is configured to stream bits to the memory devices using a write data channel that optimizes a speed of writing to the memory devices to provide writes at a first speed. A read controller is configured to read bits from the memory devices, at a second speed slower than the first speed, using a read channel. A bi-directional bus that both the write controller and the self-referenced read controller share to access the plurality of non-volatile memory devices.
    Type: Application
    Filed: September 22, 2016
    Publication date: January 19, 2017
    Inventors: JOHN K. DEBROSSE, BLAKE G. FITCH, MICHELE M. FRANCESCHINI, TODD E. TAKKEN, DANIEL C. WORLEDGE
  • PERPENDICULAR MAGNETIC ANISOTROPY BCC MULTILAYERS
    Publication number: 20160372658
    Abstract: A magnetic material includes a cobalt layer between opposing iron layers. The iron layers include iron and are body-centered cubic (BCC), the cobalt layer comprises cobalt and is BCC or amorphous, and the magnetic material has a perpendicular magnetic anisotropy (PMA).
    Type: Application
    Filed: September 1, 2016
    Publication date: December 22, 2016
    Inventors: Guohan Hu, Daniel C. Worledge
  • Structure for thermally assisted MRAM
    Patent number: 9515251
    Abstract: A mechanism is provided for fabricating a thermally assisted magnetoresistive random access memory device. A bottom thermal barrier is formed on a bottom contact. A magnetic tunnel junction is formed on the bottom thermal barrier. The magnetic tunnel junction includes a top ferromagnetic layer formed on a tunnel barrier. The tunnel barrier is formed on a bottom ferromagnetic layer. A top thermal barrier is formed on the top ferromagnetic layer. A top contact is formed on the top thermal barrier. The top contact is reduced to a first diameter. The tunnel barrier and the bottom ferromagnetic layer each have a second diameter. The first diameter of the top contact is smaller than the second diameter.
    Type: Grant
    Filed: December 29, 2014
    Date of Patent: December 6, 2016
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, CROCUS TECHNOLOGY SA
    Inventors: Anthony J. Annunziata, Lucian Prejbeanu, Philip L. Trouilloud, Daniel C. Worledge
  • Double synthetic antiferromagnet using rare earth metals and transition metals
    Patent number: 9502641
    Abstract: A mechanism relates to magnetic random access memory (MRAM). A free magnetic layer is provided and first fixed layers are disposed above the free magnetic layer. Second fixed layers are disposed below the free magnetic layer. The first fixed layers and the second fixed layers both comprise a rare earth element.
    Type: Grant
    Filed: February 26, 2016
    Date of Patent: November 22, 2016
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Guohan Hu, Daniel C. Worledge
  • Nonvolatile memory interface for metadata shadowing
    Patent number: 9496018
    Abstract: A memory includes non-volatile memory devices, each of which has multiple nonvolatile memory cells. A write controller streams bits to the memory devices in groups of N bits using a write data channel having write bus drivers, receivers and write bus topology that take advantage of high-speed signaling to optimize a speed of writing to the memory devices. Consecutive groups of bits are written to consecutive memory cells within respective memory devices. A self-referenced read controller reads bits from the memory devices using a read channel having read drivers, receivers, and read bus topology that include no design requirements for high-speed or low-latency data transmission.
    Type: Grant
    Filed: April 1, 2015
    Date of Patent: November 15, 2016
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: John K. Debrosse, Blake G. Fitch, Michele M. Franceschini, Todd E. Takken, Daniel C. Worledge
  • Current constriction for spin torque MRAM
    Patent number: 9490422
    Abstract: Magnetoresistive random access memory (MRAM) devices and methods for making the same include growing a tunnel barrier layer on a first magnetic layer. A thin layer of non-wetting material is formed on the tunnel barrier layer, such that the non-wetting material forms distinct regions on the tunnel barrier layer. A second magnetic layer is grown on the tunnel barrier layer.
    Type: Grant
    Filed: July 30, 2015
    Date of Patent: November 8, 2016
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Guohan Hu, Daniel C. Worledge