Abstract: An apparatus and method which may comprise a pulsed gas discharge laser which may comprise a seed laser portion; an amplifier portion receiving the seed laser output and amplifying the optical intensity of each seed pulse; a pulse stretcher which may comprise: a first beam splitter operatively connected with the first delay path and a second pulse stretcher operatively connected with the second delay path; a first optical delay path tower containing the first beam splitter; a second optical delay path tower containing the second beam splitter; one of the first and second optical delay paths may comprise: a plurality of mirrors defining the respective optical delay path including mirrors located in the first tower and in the second tower; the other of the first and second optical delay paths may comprise: a plurality of mirrors defining the respective optical delay path including mirrors only in one of the first tower and the second tower.

Abstract: A method/apparatus may comprise a laser light source which may comprise a solid state seed laser system producing a seed laser output having a nominal center wavelength at a pulse repetition rate; a first and a second gas discharge laser amplifier gain medium each operating at a pulse repetition rate less than that of the seed laser system; a beam divider providing each of the respective first and second amplifier gain mediums with seed laser output pulses; a frequency converter modifying the nominal center wavelength of the output of the seed laser to essentially the nominal center wavelength of the amplifier gain medium; a beam combiner combining the outputs of the respective amplifier gain mediums to provide a light source output having the pulse repetition rate of the seed laser; a coherence buster operating on either or both of the output of the seed laser or amplifier gain mediums.

Abstract: An apparatus/method which may comprise: a very high power line narrowed lithography laser light source which may comprise: a solid state seed laser system which may comprise: a pre-seed laser providing a pre-seed laser output; a fiber amplifier receiving the pre-seed laser output and providing an amplified seed laser pulse which may comprise: a pulse having a nominal wavelength outside of the DUV range; a frequency converter converting to essentially the wavelength of the amplifier gain medium; a first and a second gas discharge laser amplifier gain medium operating at different repetition rates from that of the seed laser output; a beam divider providing the amplifier gain mediums with output pulses from the seed laser; a beam combiner combining the outputs of each respective amplifier gain medium to provide a laser output light pulse beam having the pulse repetition rate of the solid state seed laser system.

Abstract: A method/apparatus may comprise operating a line narrowed pulsed excimer or molecular fluorine gas discharge laser system by using a seed laser oscillator to produce an output which may comprise a first gas discharge excimer or molecular fluorine laser chamber; a line narrowing module; a laser amplification stage which may comprise a ring power amplification stage; the method of operation may the steps of: selecting a differential timing between an electrical discharge between a pair of electrodes in the first laser chamber and in the second laser chamber which at the same time keeps ASE below a selected limit and the pulse energy of the laser system output light beam of pulses essentially constant.

Abstract: An apparatus/method which may comprise a line narrowed pulsed excimer or molecular fluorine gas discharge laser system which may comprise a seed laser oscillator producing an output comprising a seed laser output light beam of pulses which may comprise a first gas discharge excimer or molecular fluorine laser chamber; a line narrowing module within a first oscillator cavity; a laser amplification stage containing an amplifying gain medium in a second gas discharge excimer or molecular fluorine laser chamber receiving the output of the seed laser oscillator and amplifying the output of the seed laser oscillator to form a laser system output comprising a laser system output light beam of pulses, which may comprise a ring power amplification stage; a seed injection mechanism.

Abstract: An apparatus/method may comprise a line narrowed pulsed lithography laser light source which may comprise: a seed pulse providing laser system which may comprise: a first pulsed seed laser producing seed pulses at a rate of X kHz; a second pulsed seed laser producing seed pulses at a rate of X kHz; an amplification system which may comprise: a first amplifier gain system which may comprise a first and a second pulsed gas discharge amplifier gain medium, each with a nominal center wavelength in the UV range, and each operating at ½ X kHz on output pulses from the first seed laser; a second amplifier gain system which may comprise a first and a second pulsed amplifier gain medium, each with a nominal center wavelength in the UV range, and each operating at ½ X kHz on output pulses from the second seed laser.

Abstract: A method and apparatus may comprise a line narrowed pulsed excimer or molecular fluorine gas discharge laser system which may comprise a seed laser oscillator producing an output comprising a laser output light beam of pulses which may comprise a first gas discharge excimer or molecular fluorine laser chamber; a line narrowing module within a first oscillator cavity; a laser amplification stage containing an amplifying gain medium in a second gas discharge excimer or molecular fluorine laser chamber receiving the output of the seed laser oscillator and amplifying the output of the seed laser oscillator to form a laser system output comprising a laser output light beam of pulses, which may comprise a ring power amplification stage.

Abstract: A method and apparatus may comprise a line narrowed pulsed excimer or molecular fluorine gas discharge laser system which may comprise a seed laser oscillator producing an output comprising a laser output light beam of pulses which may comprise a first gas discharge excimer or molecular fluorine laser chamber; a line narrowing module within a first oscillator cavity; a laser amplification stage containing an amplifying gain medium in a second gas discharge excimer or molecular fluorine laser chamber receiving the output of the seed laser oscillator and amplifying the output of the seed laser oscillator to form a laser system output comprising a laser output light beam of pulses, which may comprise a ring power amplification stage.

Abstract: An apparatus and method is described for effectively and efficiently providing plasma irradiation laser light pulses in an LPP EUV light source which may comprise a laser initial target irradiation pulse generating mechanism irradiating a plasma initiation target with an initial target irradiation pulse to form an EUV generating plasma having an emission region emitting in-band EUV light; a laser plasma irradiation pulse generating mechanism irradiating the plasma with a plasma irradiation pulse after the initial target irradiation pulse so as to compress emission material in the plasma toward the emission region of the plasma.

Abstract: An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in a F2 laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses.

Abstract: Apparatus/method providing bandwidth control in narrow band short pulse duration gas discharge laser output light pulse beam producing systems, producing a beam comprising pulses at selected pulse repetition races, e.g., comprising a dispersive bandwidth selection optic selecting at least one center wavelength for each pulse determined at least in part by the angle of incidence of the beam containing the respective pulse on the optic; a tuning mechanism operative to select at least one angle of incidence of the beam containing the respective pulse upon the optic; the tuning mechanism comprising a plurality of incidence angle selection elements each defining an angle of incidence for a different spatially separated but not temporally separated portion of the pulse to return from the optic a laser light pulse comprising a plurality of spatially separated but not temporally separated portions, each having one of at least two different selected center wavelengths.

Abstract: An apparatus and method are disclosed for operating a narrow band short pulse duration gas discharge laser output light pulse beam producing system, producing a beam comprising laser output light pulses at a selected pulse repetition rate, which may comprise: a dispersive center wavelength selection optic selecting at least one center wavelength for each pulse determined at least in part by the angle of incidence of the laser light pulse beam containing the respective pulse on the dispersive wavelength selection optic; a tuning mechanism operative to select at least one angle of incidence of a first spatially defined portion of the laser light pulse beam containing the respective pulse upon the dispersive center wavelength selection optic; and, the tuning mechanism comprising a variably refractive optical element defining a plurality of refractive angular displacements of the first spatially defined portion of the laser light pulse beam passing through the variably refractive optical element at one of a plura

Abstract: An oscillator-amplifier gas discharge laser system and method is disclosed which may comprise a first laser unit which may comprise a first discharge region which may contain an excimer or molecular fluorine lasing gas medium; a first pair of electrodes defining the first discharge region containing the lasing gas medium, a line narrowing unit for narrowing a spectral bandwidth of output laser light pulse beam pulses produced in said first discharge region; a second laser unit which may comprise a second discharge chamber which may contain an excimer or molecular fluorine lasing gas medium; a second pair of electrodes defining the second discharge region containing the lasing gas medium; a pulse power system providing electrical pulses to the first pair of electrodes and to the second pair of electrodes producing gas discharges in the lasing gas medium between the respective first and second pair of electrodes, and laser parameter control mechanism modifying a selected parameter of a selected laser output lig

Abstract: An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in a F2 laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses.

Abstract: An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in an ArF excimer laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses.

Abstract: An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in a F2 laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses.

Abstract: An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in a F2 laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses.

Abstract: An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in a F2 laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses.

Abstract: A high resolution spectral measurement device. A preferred embodiment presents an extremely narrow slit function in the ultraviolet range and is very useful for measuring bandwidth of narrow-band excimer lasers used for integrated circuit lithography. Light from the laser is focused into a diffuser and the diffused light exiting the diffuser illuminates an etalon. A portion of its light exiting the etalon is collected and directed into a slit positioned at a fringe pattern of the etalon. Light passing through the slit is collimated and the collimated light illuminates a grating positioned in an approximately Littrow configuration which disburses the light according to wavelength. A portion of the dispursed light representing the wavelength corresponding to the selected etalon fringe is passed through a second slit and monitored by a light detector. When the etalon and the grating are tuned to the same precise wavelength a slit function is defined which is extremely narrow such as about 0.

Abstract: An injection seeded modular gas discharge laser system capable of producing high quality pulsed laser beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in an ArF excimer laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan providing sufficient gas flow to permit operation at pulse rates of 4000 Hz or greater by clearing debris from the discharge region in less time than the approximately 0.25 milliseconds between pulses.