Abstract: A method of manufacturing a semiconductor component with a multi-level interconnect system includes providing a substrate (11), fabricating a device (12) in the substrate (11), forming an interconnect layer (15) over the substrate (11), depositing a dielectric layer (20) over the interconnect layer (15), depositing a separate interconnect layer (21) over the dielectric layer (20), etching a via (31) in the separate interconnect layer (21) and in the dielectric layer (20), and depositing a different interconnect layer (40) over the separate interconnect layer (21) and in the via (31) wherein the another interconnect layer (40) electrically couples the interconnect layer (15) and the separate interconnect layer (21).

Abstract: An apparatus and method for laser ablating residue off of probe tips. In one embodiment, the probe tips of the probe needles (16) contact the test pads of an integrated circuit on a wafer (18). The probe tips build up a residue over time. This residue is due to the probe tips coming into contact with integrated circuit wafer layers such as layers (114), (120), (122), (124), and (126). This residue can be vaporized from the surface of the probe needles via exposure to a laser light. The probe needles (16) are exposed to a laser light created by a laser source (28) and ported to the probe tips by a fiber optic cable (26).