Patents by Inventor David B. James
David B. James has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9446497Abstract: A multilayer chemical mechanical polishing pad is provided, having: a polishing layer having a polishing surface, a counterbore opening, a polishing layer interfacial region parallel to the polishing surface; a porous subpad layer having a bottom surface and a porous subpad layer interfacial region parallel to the bottom surface; and, a broad spectrum, endpoint detection window block comprising, comprises an olefin copolymer; wherein the window block exhibits a uniform chemical composition across its thickness; wherein the polishing layer interfacial region and the porous subpad layer interfacial region form a coextensive region; wherein the multilayer chemical mechanical polishing pad has a through opening that extends from the polishing surface to the bottom surface of the porous subpad layer; wherein the counterbore opening opens on the polishing surface, enlarges the through opening and forms a ledge; and, wherein the window block is disposed within the counterbore opening.Type: GrantFiled: March 7, 2013Date of Patent: September 20, 2016Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc., Dow Global Technologies LLCInventors: Angus Repper, Mary A. Leugers, David B. James, Marty W. DeGroot
-
Patent number: 9259820Abstract: A chemical mechanical polishing pad is provided having a polishing layer; and an endpoint detection window incorporated into the chemical mechanical polishing pad, wherein the endpoint detection window is a plug in place window; wherein the endpoint detection window comprises a reaction product of ingredients, comprising: a window prepolymer, and, a window curative system, comprising: at least 5 wt % of a window difunctional curative; at least 5 wt % of a window amine initiated polyol curative; and, 25 to 90 wt % of a window high molecular weight polyol curative.Type: GrantFiled: March 28, 2014Date of Patent: February 16, 2016Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc., Dow Global Technologies LLCInventors: Bainian Qian, Marty W. DeGroot, James Murnane, Angus Repper, Michelle Jensen, Jeffrey J. Hendron, John G. Nowland, David B. James, Fengji Yeh
-
Patent number: 9238295Abstract: A chemical mechanical polishing pad is provided containing: a polishing layer; a plug in place endpoint detection window block; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer comprises the reaction product of ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate. Also provide are methods of making and using the chemical mechanical polishing pad.Type: GrantFiled: May 31, 2013Date of Patent: January 19, 2016Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc., Dow Global Technologies LLCInventors: Bainian Qian, Michelle K. Jensen, Marty W. DeGroot, Angus Repper, James Murnane, Jeffrey James Hendron, John G. Nowland, David B. James, Fengji Yeh
-
Patent number: 9238296Abstract: A multilayer chemical mechanical polishing pad stack is provided containing: a polishing layer; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer exhibits a density of greater than 0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate.Type: GrantFiled: May 31, 2013Date of Patent: January 19, 2016Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc., Dow Global Technologies LLCInventors: James Murnane, Bainian Qian, John G. Nowland, Michelle K. Jensen, Jeffrey James Hendron, Marty W. DeGroot, David B. James, Fengji Yeh
-
Patent number: 9233451Abstract: A chemical mechanical polishing pad stack is provided containing: a polishing layer; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer comprises the reaction product of ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate.Type: GrantFiled: May 31, 2013Date of Patent: January 12, 2016Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc., Dow Global Technologies LLCInventors: James Murnane, Bainian Qian, John G. Nowland, Michelle K. Jensen, Jeffrey James Hendron, Marty W. DeGroot, David B. James, Fengji Yeh
-
Patent number: 9186772Abstract: A chemical mechanical polishing pad is provided, comprising: a polishing layer having a polishing surface; and, a broad spectrum, endpoint detection window block having a thickness along an axis perpendicular to a plane of the polishing surface; wherein the broad spectrum, endpoint detection window block, comprises a cyclic olefin addition polymer; wherein the broad spectrum, endpoint detection window block exhibits a uniform chemical composition across its thickness; wherein the broad spectrum, endpoint detection window block exhibits a spectrum loss ?40%; and, wherein the polishing surface is adapted for polishing a substrate selected from a magnetic substrate, an optical substrate and a semiconductor substrate.Type: GrantFiled: March 7, 2013Date of Patent: November 17, 2015Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Angus Repper, David B. James, Mary A. Leugers
-
Publication number: 20150273652Abstract: A chemical mechanical polishing pad is provided having a polishing layer; and an endpoint detection window incorporated into the chemical mechanical polishing pad, wherein the endpoint detection window is a plug in place window; wherein the endpoint detection window comprises a reaction product of ingredients, comprising: a window prepolymer, and, a window curative system, comprising: at least 5 wt % of a window difunctional curative; at least 5 wt % of a window amine initiated polyol curative; and, 25 to 90 wt % of a window high molecular weight polyol curative.Type: ApplicationFiled: March 28, 2014Publication date: October 1, 2015Inventors: Bainian Qian, Marty W. DeGroot, James Murnane, Angus Repper, Michelle Jensen, Jeffrey J. Hendron, John G. Nowland, David B. James, Fengji Yeh
-
Patent number: 9144880Abstract: A chemical mechanical polishing pad for polishing a substrate selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate is provided containing a polishing layer, wherein the polishing layer comprises the reaction product of raw material ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate. Also provide are methods of making and using the chemical mechanical polishing pad.Type: GrantFiled: November 1, 2012Date of Patent: September 29, 2015Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Bainian Qian, David B. James, James Murnane, Fengji Yeh, Marty W. DeGroot
-
Patent number: 9073172Abstract: The invention provides a polishing pad useful for polishing at least one of semiconductor, magnetic and optical substrates. The polishing pad includes a polymeric matrix, the polymeric matrix having a polishing surface. In addition, polymeric microelements are distributed within the polymeric matrix and at the polishing surface of the polymeric matrix. The polymeric microelements have an outer surface and being fluid-filled for creating texture at the polishing surface. And alkaline-earth metal oxide-containing regions are distributed within each of the polymeric microelements and spaced to coat less than 50 percent of the outer surface of the polymeric microelements.Type: GrantFiled: May 11, 2012Date of Patent: July 7, 2015Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: David B. James, Donna M. Alden, Andrew R. Wank
-
Patent number: 9064806Abstract: A chemical mechanical polishing pad is provided having a polishing layer; and a window incorporated into the polishing layer; wherein the polishing layer comprises a reaction product of ingredients, including: a polishing layer prepolymer and a polishing layer curative system; wherein the polishing layer curative system includes a polishing layer amine initiated polyol curative, a polishing layer high molecular weight polyol curative and a polishing layer difunctional curative; and, wherein the window comprises a reaction product of ingredients, including: a window prepolymer and a window curative system; wherein the window curative system includes a window difunctional curative, a window amine initiated polyol curative and a window high molecular weight polyol curative; and, wherein the polishing layer exhibits a density of ?0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr.Type: GrantFiled: March 28, 2014Date of Patent: June 23, 2015Assignees: Rohm and Haas Electronics Materials CMP Holdings, Inc., Dow Global Technologies LLCInventors: Bainian Qian, Marty W. DeGroot, Michelle Jensen, James Murnane, Jeffrey J. Hendron, John G. Nowland, David B. James, Fengji Yeh
-
Patent number: 8980749Abstract: A method for polishing a silicon wafer is provided, comprising: providing a silicon wafer; providing a polishing pad having a polishing layer which is the reaction product of raw material ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.4 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the silicon wafer; and, creating dynamic contact between the polishing surface and the silicon wafer.Type: GrantFiled: October 24, 2013Date of Patent: March 17, 2015Assignees: Rohm and Haas Electronic Materials CMP Holdings, Inc., Nitta Haas IncorporatedInventors: Yasuyuki Itai, Bainian Qian, Hiroyuki Nakano, David B. James, Naoko Kawai, Katsumasa Kawabata, Koichi Yoshida, Kazutaka Miyamoto, James Murnane, Fengji Yeh, Marty W. DeGroot
-
Publication number: 20150059254Abstract: The invention provides a polishing pad suitable for planarizing semiconductor, optical and magnetic substrates. The polishing pad includes a cast polyurethane polymeric material formed from a prepolymer reaction of a polypropylene glycol and a toluene diisocyanate to form an isocyanate-terminated reaction product. The toluene diisocyanate has less than 5 weight percent aliphatic isocyanate; and the isocyanate-terminated reaction product having 5.55 to 5.85 weight percent unreacted NCO. The isocyanate-terminated reaction product being cured with a 4,4?-methylene-bis(3-chloro-2,6-diethylaniline) curative agent. The non-porous cured product having a tan delta of 0.04 to 0.10, a Young's modulus of 140 to 240 MPa and a Shore D hardness of 44 to 56.Type: ApplicationFiled: September 4, 2013Publication date: March 5, 2015Inventors: Fengji Yeh, Marty W. DeGroot, James Murnane, David B. James, Mary Jo Kulp
-
Publication number: 20140357163Abstract: A multilayer chemical mechanical polishing pad stack is provided containing: a polishing layer; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer exhibits a density of greater than 0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate.Type: ApplicationFiled: May 31, 2013Publication date: December 4, 2014Inventors: James Murnane, Bainian Qian, John G. Nowland, Michelle K. Jensen, Jeffrey James Hendron, Marty W. DeGroot, David B. James, Fengji Yeh
-
Publication number: 20140357170Abstract: A chemical mechanical polishing pad is provided containing: a polishing layer; a plug in place endpoint detection window block; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer comprises the reaction product of ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate. Also provide are methods of making and using the chemical mechanical polishing pad.Type: ApplicationFiled: May 31, 2013Publication date: December 4, 2014Inventors: Bainian Qian, Michelle K. Jensen, Marty W. DeGroot, Angus Repper, James Murnane, Jeffrey James Hendron, John G. Nowland, David B. James, Fengji Yeh
-
Publication number: 20140357169Abstract: A chemical mechanical polishing pad stack is provided containing: a polishing layer; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer comprises the reaction product of ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate.Type: ApplicationFiled: May 31, 2013Publication date: December 4, 2014Inventors: James Murnane, Bainian Qian, John G. Nowland, Michelle K. Jensen, Jeffrey James Hendron, Marty W. DeGroot, David B. James, Fengji Yeh
-
Patent number: 8894732Abstract: The invention provides a plurality of polymeric particles embedded with alkaline-earth metal oxide. The gas-filled polymeric microelements have a shell and a density of 5 g/liter to 200 g/liter. The shell has an outer surface and a diameter of 5 ?m to 200 ?m with the outer surface of the shell of the gas-filled polymeric particles having alkaline-earth metal oxide-containing particles embedded in the polymer. The alkaline-earth metal oxide-containing particles have an average particle size of 0.01 to 3 ?m distributed within each of the polymeric microelements to coat less than 50 percent of the outer surface of the polymeric microelements.Type: GrantFiled: May 11, 2012Date of Patent: November 25, 2014Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Andrew R. Wank, Donna M. Alden, David B. James
-
Patent number: 8888877Abstract: The invention involves a method of preparing an alkaline-earth metal oxide-containing polishing pad useful for polishing at least one of semiconductor, magnetic and optical substrates. The method includes introducing a feed stream of gas-filled polymeric microelements into a gas jet, the polymeric microelements having varied density, varied wall thickness and varied particle size. The method passes the polymeric microelements in the gas jet adjacent a Coanda block, the Coanda block having a curved wall for separating the polymeric microelements with Coanda effect, inertia and gas flow resistance. Then it separates various alkaline earth metal oxide constituents from the curved wall of the Coanda block to clean the polymeric microelements.Type: GrantFiled: May 11, 2012Date of Patent: November 18, 2014Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventors: Donna M. Alden, David B. James, Andrew R. Wank, James Murnane
-
Publication number: 20140256226Abstract: A chemical mechanical polishing pad is provided, comprising: a polishing layer having a polishing surface; and, a broad spectrum, endpoint detection window block having a thickness along an axis perpendicular to a plane of the polishing surface; wherein the broad spectrum, endpoint detection window block, comprises an olefin copolymer; wherein the olefin copolymer, comprises, as initial components: ethylene, a branched or straight chain C3-30 ?-olefin; a silane; and, optionally, a polyolefin; wherein the broad spectrum, endpoint detection window block exhibits a uniform chemical composition across its thickness; wherein the broad spectrum, endpoint detection window block exhibits a spectrum loss ?60%; and, wherein the polishing surface is adapted for polishing a substrate selected from a magnetic substrate, an optical substrate and a semiconductor substrate.Type: ApplicationFiled: March 7, 2013Publication date: September 11, 2014Inventors: Angus Repper, Mary A. Leugers, David B. James
-
Publication number: 20140256225Abstract: A chemical mechanical polishing pad is provided, comprising: a polishing layer having a polishing surface; and, a broad spectrum, endpoint detection window block having a thickness along an axis perpendicular to a plane of the polishing surface; wherein the broad spectrum, endpoint detection window block, comprises a cyclic olefin addition polymer; wherein the broad spectrum, endpoint detection window block exhibits a uniform chemical composition across its thickness; wherein the broad spectrum, endpoint detection window block exhibits a spectrum loss ?40%; and, wherein the polishing surface is adapted for polishing a substrate selected from a magnetic substrate, an optical substrate and a semiconductor substrate.Type: ApplicationFiled: March 7, 2013Publication date: September 11, 2014Applicants: DOW GLOBAL TECHNOLOGIES LLC, Roham and Haas Electronic Materials CMP Holdings IncInventors: Angus Repper, David B. James, Mary A. Leugers
-
Publication number: 20140256232Abstract: A multilayer chemical mechanical polishing pad is provided, having: a polishing layer having a polishing surface, a counterbore opening, a polishing layer interfacial region parallel to the polishing surface; a porous subpad layer having a bottom surface and a porous subpad layer interfacial region parallel to the bottom surface; and, a broad spectrum, endpoint detection window block comprising, comprises an olefin copolymer; wherein the window block exhibits a uniform chemical composition across its thickness; wherein the polishing layer interfacial region and the porous subpad layer interfacial region form a coextensive region; wherein the multilayer chemical mechanical polishing pad has a through opening that extends from the polishing surface to the bottom surface of the porous subpad layer; wherein the counterbore opening opens on the polishing surface, enlarges the through opening and forms a ledge; and, wherein the window block is disposed within the counterbore opening.Type: ApplicationFiled: March 7, 2013Publication date: September 11, 2014Applicants: Dow Global Technologies LLC, Rohm and Haas Electronic Materials CMP Holdings Inc.Inventors: Angus Repper, Mary A. Leugers, David B. James, Marty W. DeGroot