Abstract: A multilayer chemical mechanical polishing pad is provided, having: a polishing layer having a polishing surface, a counterbore opening, a polishing layer interfacial region parallel to the polishing surface; a porous subpad layer having a bottom surface and a porous subpad layer interfacial region parallel to the bottom surface; and, a broad spectrum, endpoint detection window block comprising a cyclic olefin addition polymer; wherein the window block exhibits a uniform chemical composition across its thickness; wherein the polishing layer interfacial region and the porous subpad layer interfacial region form a coextensive region; wherein the multilayer chemical mechanical polishing pad has a through opening that extends from the polishing surface to the bottom surface of the porous subpad layer; wherein the counterbore opening opens on the polishing surface, enlarges the through opening and forms a ledge; and, wherein the window block is disposed within the counterbore opening.

Abstract: A chemical mechanical polishing pad for polishing a substrate selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate is provided containing a polishing layer, wherein the polishing layer comprises the reaction product of raw material ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 ?m/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate. Also provide are methods of making and using the chemical mechanical polishing pad.

Abstract: The invention provides a polishing pad useful for polishing at least one of semiconductor, magnetic and optical substrates. The polishing pad includes a polymeric matrix, the polymeric matrix having a polishing surface. In addition, polymeric microelements are distributed within the polymeric matrix and at the polishing surface of the polymeric matrix. The polymeric microelements have an outer surface and being fluid-filled for creating texture at the polishing surface. And alkaline-earth metal oxide-containing regions are distributed within each of the polymeric microelements paced to coat less than 50 percent of the outer surface of the polymeric microelements.

Abstract: The invention involves a method of preparing an alkaline-earth metal oxide-containing polishing pad useful for polishing at least one of semiconductor, magnetic and optical substrates. The method includes introducing a feed stream of gas-filled polymeric micro elements into a gas jet, the polymeric microelements having varied density, varied wall thickness and varied particle size. The method passes the polymeric microelements in the gas jet adjacent a Coanda block, the Coanda block having a curved wall for separating the polymeric microelements with Coanda effect, inertia and gas flow resistance. Then it separates various alkaline earth metal oxide constituents from the curved wall of the Coanda block to clean the polymeric microelements.

Abstract: The invention provides a plurality of polymeric particles embedded with alkaline-earth metal oxide. The gas-filled polymeric microelements have a shell and a density of 5 g/liter to 200 g/liter. The shell has an outer surface and a diameter of 5 ?m to 200 ?m with the outer surface of the shell of the gas-filled polymeric particles having alkaline-earth metal oxide-containing particles embedded in the polymer. The alkaline-earth metal oxide-containing particles have an average particle size of 0.01 to 3 ?m distributed within each of the polymeric microelements to coat less than 50 percent of the outer surface of the polymeric microelements.

Abstract: A chemical mechanical polishing pad comprising an acrylate polyurethane polishing layer, wherein the polishing layer exhibits a tensile modulus of 65 to 500 MPa; an elongation to break of 50 to 250%; a storage modulus, G?, of 25 to 200 MPa; a Shore D hardness of 25 to 75; and a wet cut rate of 1 to 10 ?m/min.

Abstract: A chemical mechanical polishing pad comprising an acrylate polyurethane polishing layer, wherein the polishing layer exhibits a tensile modulus of 65 to 500 MPa; an elongation to break of 50 to 250%; a storage modulus, G?, of 25 to 200 MPa; a Shore D hardness of 25 to 75; and a wet cut rate of 1 to 10 ?m/min.

Abstract: The polishing pad is useful for polishing at least one of magnetic, optical and semiconductor substrates. A porous polishing layer includes a dual porosity structure within a polyurethane matrix. The dual porosity structure has a primary set of pores having pore walls with a thickness of 15 to 55 ?m and a storage modulus of 10 to 60 MPa measured at 25° C. In addition, pore walls contain a secondary set of pores having an average pore size of 5 to 30 ?m. The porous polishing layer is either fixed to a polymeric film or sheet substrate or formed into a woven or non-woven structure to form the polishing pad.

Abstract: The polishing pad is useful for polishing at least one of magnetic, optical and semiconductor substrates. A porous polishing layer includes a dual porosity structure within a polyurethane matrix. The dual porosity structure has a primary set of pores having pore walls with a thickness of 15 to 55 ?m and a storage modulus of 10 to 60 MPa measured at 25° C. In addition, pore walls contain a secondary set of pores having an average pore size of 5 to 30 ?m. The porous polishing layer is either fixed to a polymeric film or sheet substrate or formed into a woven or non-woven structure to form the polishing pad.

Abstract: The polishing pad is useful for polishing at least one of magnetic, optical and semiconductor substrates. A porous polishing layer includes a dual porosity structure within a polyurethane matrix. The dual porosity structure has a primary set of pores having pore walls with a thickness of 15 to 55 ?m and a storage modulus of 10 to 60 MPa measured at 25° C. In addition, pore walls contain a secondary set of pores having an average pore size of 5 to 30 ?m. The porous polishing layer is either fixed to a polymeric film or sheet substrate or formed into a woven or non-woven structure to form the polishing pad.

Abstract: The polishing pad is useful for polishing at least one of magnetic, optical and semiconductor substrates. A porous polishing layer includes a dual porosity structure within a polyurethane matrix. The dual porosity structure has a primary set of pores having pore walls with a thickness of 15 to 55 ?m and a storage modulus of 10 to 60 MPa measured at 25° C. In addition, pore walls contain a secondary set of pores having an average pore size of 5 to 30 ?m. The porous polishing layer is either fixed to a polymeric film or sheet substrate or formed into a woven or non-woven structure to form the polishing pad.

Abstract: The present invention provides a method of electrochemical polishing of a workpiece using a polishing pad having a cellular polymeric layer overlying a conductive substrate, the cellular polymeric layer having a thickness less than 1.5 mm; wherein the cellular polymeric layer comprises a plurality of pores that extend through the thickness of the cellular polymeric layer from a polishing surface of the cellular polymeric layer to the conductive substrate; and wherein the plurality of pores exhibit a diameter that is smaller at the polishing surface than at the conductive substrate.

Abstract: The present invention provides a method of electrochemical polishing of a workpiece using a polishing pad having a cellular polymeric layer overlying a conductive substrate, the cellular polymeric layer having a thickness less than 1.5 mm; wherein the cellular polymeric layer comprises a plurality of pores that extend through the thickness of the cellular polymeric layer from a polishing surface of the cellular polymeric layer to the conductive substrate; and wherein the plurality of pores exhibit a diameter that is smaller at the polishing surface than at the conductive substrate.

Abstract: The present invention provides polishing pad for electrochemical mechanical polishing. The pad comprises a cellular polymeric layer overlying a conductive substrate, the cellular polymeric layer having a thickness less than 1.5 mm.

Abstract: The present invention provides an apparatus for forming a chemical mechanical polishing pad, comprising a tank with polymeric materials, a storage silo with microspheres, a isocyanate storage tank with isocyanates and a premix prep tank for forming a pre-mixture of the polymeric materials and the microspheres. The invention further provides a premix run tank for storing the pre-mixture, a mixer for forming a mixture of the pre-mixture and the isocyanates, a closed mold for reaction-injection molding the mixture and a vacuum for degassing at least one of the tank, isocyanate storage tank or the mold.

Abstract: A chemical mechanical polishing pad is suitable for polishing at least one of semiconductor, optical and magnetic substrates. The polishing pad has a high modulus component forming a continuous polymeric matrix and an impact modifier within the continuous polymeric matrix. The high modulus component has a modulus of at least 100 MPa. The impact modifier includes a low modulus component having a modulus of at least one order of magnitude less than the high modulus component that increases the impact resistance of the polishing pad.

Abstract: The present invention provides a method of forming a chemical mechanical polishing pad comprising providing a polymeric matrix with fluid-filled unexpanded microspheres, curing the polymeric matrix and heating the polymeric matrix and the microspheres to expand the microspheres.

Abstract: The present invention provides a method of forming a chemical mechanical polishing pad comprising, providing a tank with polymeric materials, providing a storage silo with microspheres and providing an isocyanate storage tank with isocyanates. The invention further provides delivering the polymeric materials and the microspheres to a premix prep tank, forming a pre-mixture of the polymeric materials and the microspheres, delivering the pre-mixture to a premix run tank and forming a mixture of the pre-mixture and the isocyanates. Further the invention provides injecting the mixture into a closed mold, curing the polishing pad in the mold and degassing at least one of the tank, isocyanate storage tank and the mold.

Abstract: A chemical mechanical polishing pad is suitable for polishing at least one of semiconductor, optical and magnetic substrates. The polishing pad has a high modulus component forming a continuous polymeric matrix and an impact modifier within the continuous polymeric matrix. The high modulus component has a modulus of at least 100 MPa. The impact modifier includes a low modulus component having a modulus of at least one order of magnitude less than the high modulus component that increases the impact resistance of the polishing pad.

Abstract: The chemical mechanical polishing pad is suitable for polishing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a polymeric matrix with an elastomeric polymer distributed within the polymeric matrix. The polymeric matrix has a glass transition above room temperature; and the elastomeric polymer has an average length of at least 0.1 ?m in at least one direction, represents 1 to 45 volume percent of polishing pad and has a glass transition temperature below room temperature. The polishing pad has an increased diamond conditioner cut rate in comparison to a polishing pad formed from the polymeric matrix without the elastomeric polymer.